JPS6452070A - Microwave plasma cvd device - Google Patents

Microwave plasma cvd device

Info

Publication number
JPS6452070A
JPS6452070A JP62205918A JP20591887A JPS6452070A JP S6452070 A JPS6452070 A JP S6452070A JP 62205918 A JP62205918 A JP 62205918A JP 20591887 A JP20591887 A JP 20591887A JP S6452070 A JPS6452070 A JP S6452070A
Authority
JP
Japan
Prior art keywords
microwave
vacuum vessel
vicinity
plasma generating
generating region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP62205918A
Other languages
Japanese (ja)
Inventor
Toshiyasu Shirasago
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Inc
Original Assignee
Canon Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Inc filed Critical Canon Inc
Priority to JP62205918A priority Critical patent/JPS6452070A/en
Publication of JPS6452070A publication Critical patent/JPS6452070A/en
Pending legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Abstract

PURPOSE:To improve the utilization efficiency of a raw gas and to stably form a homogeneous deposited film with good reproducibility and at a high rate by providing a microwave inlet window in the wall of a vacuum vessel in the vicinity of both ends of a film forming cylindrical carrier, and furnishing an exhaust means in the vicinity of the window. CONSTITUTION:The inside of the vacuum vessel 101 is evacuated through an exhaust hole 104. The cylindrical substrate 105 is rotated, heated by a heater 107 to a prescribed temp., and kept at that temp. The raw gases such as SiH4, H2, and B2H6 are supplied into the vacuum vessel 101, and then the microwave generated from a microwave generator is passed through a waveguide 103 and introduced into a plasma generating region 106 through the microwave inlet window 102. The introduced raw gases are excited by the energy of the microwave, and dissociated to form neutral radical particles, ion particles, electrons, etc. The materials reacts with each other, and a deposited film is formed on the surface of the conductive cylindrical substrate 105 on the plasma generating region 106 side.
JP62205918A 1987-08-19 1987-08-19 Microwave plasma cvd device Pending JPS6452070A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62205918A JPS6452070A (en) 1987-08-19 1987-08-19 Microwave plasma cvd device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62205918A JPS6452070A (en) 1987-08-19 1987-08-19 Microwave plasma cvd device

Publications (1)

Publication Number Publication Date
JPS6452070A true JPS6452070A (en) 1989-02-28

Family

ID=16514901

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62205918A Pending JPS6452070A (en) 1987-08-19 1987-08-19 Microwave plasma cvd device

Country Status (1)

Country Link
JP (1) JPS6452070A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230572A (en) * 1991-03-28 1993-07-27 Brother Kogyo Kabushiki Kaisha Tape printer having spacing function

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5230572A (en) * 1991-03-28 1993-07-27 Brother Kogyo Kabushiki Kaisha Tape printer having spacing function

Similar Documents

Publication Publication Date Title
US4948750A (en) Method and apparatus for producing semiconductor layers composed of amorphous silicon-germanium alloys through glow discharge technique, particularly for solar cells
US5185132A (en) Atomspheric plasma reaction method and apparatus therefor
Turban et al. A study of the silane glow discharge deposition by isotopic labelling
JPS6436769A (en) Plasma treatment device
JPS5645760A (en) Vapor growth method
JPS6417870A (en) Manufacture of carbon
JPS5713174A (en) Reactive sputtering method
US4798739A (en) Plasma-assisted method for thin film fabrication
JPS6347141B2 (en)
JPS5766625A (en) Manufacture of film
JPS6452070A (en) Microwave plasma cvd device
Pelletier et al. Chemical vapor deposition in high-density low-pressure plasmas: reactor scale-up and performance
JPS56116869A (en) Inductive reduced pressure gaseous phase method
JPS5767009A (en) Formation of film
JPS57161057A (en) Chemical vapor phase growth device using plasma
JPS5773174A (en) Manufacturing apparatus for coating film
JPS57123969A (en) Formation of zinc oxide film by vapor phase method using plasma
JPH01120810A (en) Microwave plasma production device
JPH01107498A (en) Microwave plasma generating device
JPS579868A (en) Surface treating apparatus with microwave plasma
JPS6417869A (en) Microwave plasma chemical vapor deposition device
JPS5773175A (en) Chemical vapor deposition device
JPS5853869A (en) Preparation of photo-electric conversion apparatus
JPS57167630A (en) Plasma vapor-phase growing device
JPS57187935A (en) Forming of fine crystalline amorphous silicon film