JPH01125530U - - Google Patents

Info

Publication number
JPH01125530U
JPH01125530U JP6257288U JP6257288U JPH01125530U JP H01125530 U JPH01125530 U JP H01125530U JP 6257288 U JP6257288 U JP 6257288U JP 6257288 U JP6257288 U JP 6257288U JP H01125530 U JPH01125530 U JP H01125530U
Authority
JP
Japan
Prior art keywords
flat plate
electrode
reaction chamber
electrodes
cvd apparatus
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP6257288U
Other languages
Japanese (ja)
Other versions
JPH0351971Y2 (en
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP1988062572U priority Critical patent/JPH0351971Y2/ja
Publication of JPH01125530U publication Critical patent/JPH01125530U/ja
Application granted granted Critical
Publication of JPH0351971Y2 publication Critical patent/JPH0351971Y2/ja
Expired legal-status Critical Current

Links

Description

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は本考案による一実施例の構成を示した
正面断面図、第２図は本考案による他の一実施例
の構成を示した正面断面図、第３図は従来の平行
平板型プラズマＣＶＤ装置の構成を示した正面断
面図である。 １……ガス導入口、２……真空排気口、３……
反応室、４，４′……平板電極、５，５′……基
板ホルダ、６，６′……電極間ギヤツプ、７，７
′……放電防止シールド、８，８′……基板、９
，９′……加熱ヒータ、１０……高周波電源。 FIG. 1 is a front sectional view showing the configuration of one embodiment of the present invention, FIG. 2 is a front sectional view showing the configuration of another embodiment of the invention, and FIG. 3 is a conventional parallel plate plasma. 1 is a front sectional view showing the configuration of a CVD apparatus. 1...Gas inlet, 2...Vacuum exhaust port, 3...
Reaction chamber, 4, 4'... Flat electrode, 5, 5'... Substrate holder, 6, 6'... Gap between electrodes, 7, 7
'... Discharge prevention shield, 8, 8'... Board, 9
, 9'... Heater, 10... High frequency power supply.

Claims (1)

【実用新案登録請求の範囲】 (1) 少なくとも１つの金属製の反応室を有し、
該反応室内に互いに対向する複数の電極を備え、
該複数の電極の内、接地される側の電極上に載置
した基板表面に薄膜を生成するプラズマＣＶＤ装
置において、前記複数の電極が、第１の平板電極
と、該第１の平板電極の両側に対向して配置され
る第２の平板電極とから成り、前記第１又は第２
の平板電極のどちらか一方に、直流又は交流電流
が印加され、他方が接地される関係にするととも
に、前記接地される側の第１又は第２の平板電極
のいづれかが複数の前記反応室間又は前記反応室
と前記反応室外の間を移動可能であることを特徴
とするプラズマＣＶＤ装置。 (2) 前記第１又は第２の平板電極の電極面が鉛
直である請求項１記載のプラズマＣＶＤ装置。[Claims for Utility Model Registration] (1) Having at least one metal reaction chamber,
A plurality of electrodes facing each other are provided in the reaction chamber,
In a plasma CVD apparatus that generates a thin film on the surface of a substrate placed on the grounded electrode among the plurality of electrodes, the plurality of electrodes include a first flat plate electrode and a first flat plate electrode. a second flat plate electrode disposed opposite to each other on both sides;
Direct current or alternating current is applied to one of the flat plate electrodes, and the other is grounded, and either the first or second flat plate electrode on the grounded side connects the plurality of reaction chambers. Alternatively, a plasma CVD apparatus characterized in that it is movable between the reaction chamber and the outside of the reaction chamber. (2) The plasma CVD apparatus according to claim 1, wherein the electrode surface of the first or second flat electrode is vertical.
JP1988062572U 1988-05-12 1988-05-12 Expired JPH0351971Y2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1988062572U JPH0351971Y2 (en) 1988-05-12 1988-05-12

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1988062572U JPH0351971Y2 (en) 1988-05-12 1988-05-12

Publications (2)

Publication Number Publication Date
JPH01125530U true JPH01125530U (en) 1989-08-28
JPH0351971Y2 JPH0351971Y2 (en) 1991-11-08

Family

ID=31288175

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1988062572U Expired JPH0351971Y2 (en) 1988-05-12 1988-05-12

Country Status (1)

Country Link
JP (1) JPH0351971Y2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093716A (en) * 2000-09-12 2002-03-29 Kobe Steel Ltd Plasma surface-treating apparatus

Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265184A (en) * 1975-11-26 1977-05-30 Nippon Telegr & Teleph Corp <Ntt> Eqipment for simultaneous sputtering at both surface
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
JPS556410A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Plasma gas phase reactor
JPS5527626A (en) * 1978-08-17 1980-02-27 Murata Manufacturing Co Electronic part magazine container
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device
JPS5585673A (en) * 1978-12-20 1980-06-27 Advanced Coating Tech Cathode for sputtering
JPS5645761A (en) * 1979-09-25 1981-04-25 Mitsubishi Electric Corp Plasma reaction apparatus
JPS5664437A (en) * 1979-08-22 1981-06-01 Onera (Off Nat Aerospatiale) Method and device for chemically etching integrated circuit by dry process
JPS5681923A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film
EP0034706A2 (en) * 1980-02-08 1981-09-02 VEB Zentrum für Forschung und Technologie Mikroelektronik Process and apparatus for ion etching or for plasma C.V.D.
JPS56114387A (en) * 1980-02-13 1981-09-08 Sanyo Electric Co Ltd Manufacture of photovoltaic force element
JPS5743413A (en) * 1980-05-19 1982-03-11 Energy Conversion Devices Inc Semiconductor element and method of producing same
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
JPS5778546A (en) * 1980-11-05 1982-05-17 Stanley Electric Co Ltd Production of photoconductive silicon layer
JPS5784137A (en) * 1980-11-14 1982-05-26 Matsushita Electric Ind Co Ltd Plasma chemical evaporation
JPS5789217A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Manufacturing device of semiconductor
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode

Patent Citations (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5265184A (en) * 1975-11-26 1977-05-30 Nippon Telegr & Teleph Corp <Ntt> Eqipment for simultaneous sputtering at both surface
US4116806A (en) * 1977-12-08 1978-09-26 Battelle Development Corporation Two-sided planar magnetron sputtering apparatus
JPS556410A (en) * 1978-06-26 1980-01-17 Hitachi Ltd Plasma gas phase reactor
JPS5527626A (en) * 1978-08-17 1980-02-27 Murata Manufacturing Co Electronic part magazine container
JPS5559727A (en) * 1978-10-27 1980-05-06 Hitachi Ltd Plasma deposition device
JPS5585673A (en) * 1978-12-20 1980-06-27 Advanced Coating Tech Cathode for sputtering
JPS5664437A (en) * 1979-08-22 1981-06-01 Onera (Off Nat Aerospatiale) Method and device for chemically etching integrated circuit by dry process
JPS5645761A (en) * 1979-09-25 1981-04-25 Mitsubishi Electric Corp Plasma reaction apparatus
JPS5681923A (en) * 1979-12-06 1981-07-04 Sumitomo Electric Ind Ltd Manufacture of thin film
EP0034706A2 (en) * 1980-02-08 1981-09-02 VEB Zentrum für Forschung und Technologie Mikroelektronik Process and apparatus for ion etching or for plasma C.V.D.
JPS56114387A (en) * 1980-02-13 1981-09-08 Sanyo Electric Co Ltd Manufacture of photovoltaic force element
JPS5743413A (en) * 1980-05-19 1982-03-11 Energy Conversion Devices Inc Semiconductor element and method of producing same
JPS5767020A (en) * 1980-10-15 1982-04-23 Agency Of Ind Science & Technol Thin silicon film and its manufacture
JPS5778546A (en) * 1980-11-05 1982-05-17 Stanley Electric Co Ltd Production of photoconductive silicon layer
JPS5784137A (en) * 1980-11-14 1982-05-26 Matsushita Electric Ind Co Ltd Plasma chemical evaporation
JPS5789217A (en) * 1980-11-26 1982-06-03 Seiko Epson Corp Manufacturing device of semiconductor
JPS58174570A (en) * 1982-03-29 1983-10-13 エナージー・コンバーション・デバイセス・インコーポレーテッド Glow discharge deposition device containing non-horizontally placed cathode

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002093716A (en) * 2000-09-12 2002-03-29 Kobe Steel Ltd Plasma surface-treating apparatus

Also Published As

Publication number Publication date
JPH0351971Y2 (en) 1991-11-08

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