JPS5784137A - Plasma chemical evaporation - Google Patents

Plasma chemical evaporation

Info

Publication number
JPS5784137A
JPS5784137A JP15944480A JP15944480A JPS5784137A JP S5784137 A JPS5784137 A JP S5784137A JP 15944480 A JP15944480 A JP 15944480A JP 15944480 A JP15944480 A JP 15944480A JP S5784137 A JPS5784137 A JP S5784137A
Authority
JP
Japan
Prior art keywords
insulator substrate
electrode
plate
insulator
polyimide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15944480A
Other languages
Japanese (ja)
Inventor
Hiroshi Yamazoe
Mamoru Takeda
Isao Oota
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP15944480A priority Critical patent/JPS5784137A/en
Publication of JPS5784137A publication Critical patent/JPS5784137A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/50—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges
    • C23C16/505—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges
    • C23C16/509—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating using electric discharges using radio frequency discharges using internal electrodes
    • C23C16/5096—Flat-bed apparatus

Abstract

PURPOSE:To unify ditribution of film thickness and distribution of resistance value of a thin film to be formed on the surface of an insulator substrate by a method wherein one side electrode of a pair of parallel plane type electrodes to put the insulator substrate thereon is covered with an insulator. CONSTITUTION:The parallel plane type electrode 3 or 4 is insulated with one of alumina, ceramic, glass, polyimide, Teflon, quartz glass. The insulator substrate to be put on the electrode 3 or 4 is selected from one of alumina, ceramic plate, single crystal sapphire plate, Mylar plate, resin plate of polyimide, borosilicate glass. The inside of a reaction chamber is held at a vacuum, silane gas is introduced from a material gas introducing port 5, a high-frequency voltage is applied between the electodes 3, 4 to convert gas in the reaction chamber into plasma, and the amrophous silicon thin film containing hydrogen is formed on the surface of the insulator substrate put on the electrode covered with the insulating film. Accordingly distribution of film thickness and resistance value can be uniformed.
JP15944480A 1980-11-14 1980-11-14 Plasma chemical evaporation Pending JPS5784137A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15944480A JPS5784137A (en) 1980-11-14 1980-11-14 Plasma chemical evaporation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15944480A JPS5784137A (en) 1980-11-14 1980-11-14 Plasma chemical evaporation

Publications (1)

Publication Number Publication Date
JPS5784137A true JPS5784137A (en) 1982-05-26

Family

ID=15693881

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15944480A Pending JPS5784137A (en) 1980-11-14 1980-11-14 Plasma chemical evaporation

Country Status (1)

Country Link
JP (1) JPS5784137A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2587732A1 (en) * 1985-09-26 1987-03-27 Centre Nat Rech Scient Reactor for plasma-assisted vapour-phase chemical deposition
JPS6337615A (en) * 1986-07-31 1988-02-18 Tokyo Electron Ltd Plasma electrode
JPS6358920A (en) * 1986-08-29 1988-03-14 Tokyo Electron Ltd Plasma electrode
JPH01125530U (en) * 1988-05-12 1989-08-28
US5705019A (en) * 1994-10-26 1998-01-06 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
GB2563264A (en) * 2017-06-08 2018-12-12 Jaguar Land Rover Ltd Vehicle parcel shelf

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2587732A1 (en) * 1985-09-26 1987-03-27 Centre Nat Rech Scient Reactor for plasma-assisted vapour-phase chemical deposition
JPS6337615A (en) * 1986-07-31 1988-02-18 Tokyo Electron Ltd Plasma electrode
JPH0556853B2 (en) * 1986-07-31 1993-08-20 Tokyo Electron Ltd
JPS6358920A (en) * 1986-08-29 1988-03-14 Tokyo Electron Ltd Plasma electrode
JPH01125530U (en) * 1988-05-12 1989-08-28
JPH0351971Y2 (en) * 1988-05-12 1991-11-08
US5705019A (en) * 1994-10-26 1998-01-06 Sumitomo Metal Industries, Ltd. Plasma processing apparatus
GB2563264A (en) * 2017-06-08 2018-12-12 Jaguar Land Rover Ltd Vehicle parcel shelf
GB2563264B (en) * 2017-06-08 2019-12-25 Jaguar Land Rover Ltd Vehicle parcel shelf

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