JPS5640282A - Preparation of semiconductor element - Google Patents
Preparation of semiconductor elementInfo
- Publication number
- JPS5640282A JPS5640282A JP11590779A JP11590779A JPS5640282A JP S5640282 A JPS5640282 A JP S5640282A JP 11590779 A JP11590779 A JP 11590779A JP 11590779 A JP11590779 A JP 11590779A JP S5640282 A JPS5640282 A JP S5640282A
- Authority
- JP
- Japan
- Prior art keywords
- electrode
- substrate
- earth
- sno2
- deposit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 239000000758 substrate Substances 0.000 abstract 6
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 4
- 239000000463 material Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910021417 amorphous silicon Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229920006267 polyester film Polymers 0.000 abstract 1
- 125000006850 spacer group Chemical group 0.000 abstract 1
- 238000004544 sputter deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
- Light Receiving Elements (AREA)
Abstract
PURPOSE:To keep the electrode in stable conditions when placing a substrate provided with a transparent electrode of such oxide as InO3 or SnO2 on its surface in an evaporation apparatus or the like and coating this with a semiconductor material for a photoconductive cell, by insulating the substrate from the earth electrode. CONSTITUTION:When a substrate 1 of aluminium, quartz glass or polyester film provided with a transparent electrode 3 of such oxide as InO2O3 or SnO2 on its surface is placed in a vacuum chamber 13 constituting a sputtering or plasma decomposing apparatus to allow a material for a photoconductive cell such as amorphous silicon to deposit on the surface, the substrate 1 is mounted on a substrate holder 7 serving also as an earth electrode at an earth potential by using an insulating spacer 5 so as to be electrically insulated from the earth. This prevents the electrode 3 from being reduced despite a reducible atmosphere when discharge 11 is taken place between the substrate 1 and an opposed electrode 9 connected to a power source 15 in order to allow the semiconductor material to deposit on the electrode 3. Consequently, the electrode 3 is kept in stable conditions.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11590779A JPS5640282A (en) | 1979-09-10 | 1979-09-10 | Preparation of semiconductor element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP11590779A JPS5640282A (en) | 1979-09-10 | 1979-09-10 | Preparation of semiconductor element |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5640282A true JPS5640282A (en) | 1981-04-16 |
Family
ID=14674151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP11590779A Pending JPS5640282A (en) | 1979-09-10 | 1979-09-10 | Preparation of semiconductor element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5640282A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1361293A1 (en) * | 2001-02-15 | 2003-11-12 | Kaneka Corporation | Method of forming silicon thin film and silicon thin film solar cell |
| JP2018204094A (en) * | 2017-06-07 | 2018-12-27 | パナソニックＩｐマネジメント株式会社 | Semiconductor electrode, device therewith, and production method of semiconductor electrode |
-
1979
- 1979-09-10 JP JP11590779A patent/JPS5640282A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1361293A1 (en) * | 2001-02-15 | 2003-11-12 | Kaneka Corporation | Method of forming silicon thin film and silicon thin film solar cell |
| US6849560B2 (en) | 2001-02-15 | 2005-02-01 | Kaneka Corporation | Method of depositing silicon thin film and silicon thin film solar cell |
| EP1361293A4 (en) * | 2001-02-15 | 2009-03-04 | Kaneka Corp | Method of forming silicon thin film and silicon thin film solar cell |
| JP2018204094A (en) * | 2017-06-07 | 2018-12-27 | パナソニックＩｐマネジメント株式会社 | Semiconductor electrode, device therewith, and production method of semiconductor electrode |
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