JPS5614498A - Manufacture of transparent electrically conductive thin film - Google Patents

Manufacture of transparent electrically conductive thin film

Info

Publication number
JPS5614498A
JPS5614498A JP8905479A JP8905479A JPS5614498A JP S5614498 A JPS5614498 A JP S5614498A JP 8905479 A JP8905479 A JP 8905479A JP 8905479 A JP8905479 A JP 8905479A JP S5614498 A JPS5614498 A JP S5614498A
Authority
JP
Japan
Prior art keywords
substrate
thin film
cluster
ions
crucible
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP8905479A
Other languages
Japanese (ja)
Inventor
Toshinori Takagi
Shinsaku Nakada
Yoichi Mikami
Masahiro Hotta
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sekisui Chemical Co Ltd
Original Assignee
Sekisui Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sekisui Chemical Co Ltd filed Critical Sekisui Chemical Co Ltd
Priority to JP8905479A priority Critical patent/JPS5614498A/en
Publication of JPS5614498A publication Critical patent/JPS5614498A/en
Pending legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J3/00—Processes of utilising sub-atmospheric or super-atmospheric pressure to effect chemical or physical change of matter; Apparatus therefor
    • B01J3/006—Processes utilising sub-atmospheric pressure; Apparatus therefor
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

PURPOSE:To form the titled thin film having high transmittance on a low m.p. substrate by heating a hermetically sealed crucible in a vacuum vessel, ionizing a cluster of atoms of Sn or the like generated from the spouting hole of the crucible and O2 introduced under a predetermined pressure, and depositing the ions on the substrate. CONSTITUTION:O2 is introduced into vacuum vessel 1 of <=10<-4>Torr from pipe 3 to apply 2X10<-5>-10<-3>Torr partial pressure, and hermetically sealed crucible 211 holding Sn or In is heated to generate a cluster of Sn or In atoms from spouting hole 212. Electron ions from electron generator 22 are hit against the above-mentioned O2 and the cluster to ionize them, and the ions are accelerated in an electric field and hit against insulating molded substrate 5 made of polymer or other material to deposit Sn or In oxide. Thus, the titled thin film with superior transparency is formed on such a low m.p. substrate without using a harmful substance and causing a problem about environmental pollution. This film is suitably applied to windowpanes of aircraft, etc.
JP8905479A 1979-07-12 1979-07-12 Manufacture of transparent electrically conductive thin film Pending JPS5614498A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP8905479A JPS5614498A (en) 1979-07-12 1979-07-12 Manufacture of transparent electrically conductive thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP8905479A JPS5614498A (en) 1979-07-12 1979-07-12 Manufacture of transparent electrically conductive thin film

Publications (1)

Publication Number Publication Date
JPS5614498A true JPS5614498A (en) 1981-02-12

Family

ID=13960144

Family Applications (1)

Application Number Title Priority Date Filing Date
JP8905479A Pending JPS5614498A (en) 1979-07-12 1979-07-12 Manufacture of transparent electrically conductive thin film

Country Status (1)

Country Link
JP (1) JPS5614498A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60162773A (en) * 1984-01-31 1985-08-24 Futaba Corp Ion beam vapor deposition device
JPS60200957A (en) * 1984-03-26 1985-10-11 Futaba Corp Ion beam vapor deposition device
JPS61238957A (en) * 1985-04-17 1986-10-24 Mitsubishi Electric Corp Formation of thin optical film
US5443862A (en) * 1992-08-28 1995-08-22 Saint-Gobain Vitrage International Process for the treatment of thin films having properties of electrical conduction and/or reflection in the infrared

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211785A (en) * 1975-07-18 1977-01-28 Futaba Corp Schottky barrier type solid state element
JPS5413472A (en) * 1977-07-04 1979-01-31 Futaba Denshi Kogyo Kk Crucible apparatus

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5211785A (en) * 1975-07-18 1977-01-28 Futaba Corp Schottky barrier type solid state element
JPS5413472A (en) * 1977-07-04 1979-01-31 Futaba Denshi Kogyo Kk Crucible apparatus

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60162773A (en) * 1984-01-31 1985-08-24 Futaba Corp Ion beam vapor deposition device
JPS6339667B2 (en) * 1984-01-31 1988-08-05 Futaba Denshi Kogyo Kk
JPS60200957A (en) * 1984-03-26 1985-10-11 Futaba Corp Ion beam vapor deposition device
JPH0448869B2 (en) * 1984-03-26 1992-08-07 Futaba Denshi Kogyo Kk
JPS61238957A (en) * 1985-04-17 1986-10-24 Mitsubishi Electric Corp Formation of thin optical film
JPH048507B2 (en) * 1985-04-17 1992-02-17
US5443862A (en) * 1992-08-28 1995-08-22 Saint-Gobain Vitrage International Process for the treatment of thin films having properties of electrical conduction and/or reflection in the infrared

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