JPS56109432A - Manufacture of gas discharge panel - Google Patents

Manufacture of gas discharge panel

Info

Publication number
JPS56109432A
JPS56109432A JP1109080A JP1109080A JPS56109432A JP S56109432 A JPS56109432 A JP S56109432A JP 1109080 A JP1109080 A JP 1109080A JP 1109080 A JP1109080 A JP 1109080A JP S56109432 A JPS56109432 A JP S56109432A
Authority
JP
Japan
Prior art keywords
material layer
dielectric material
substrate
temperature
gas discharge
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1109080A
Other languages
Japanese (ja)
Other versions
JPS607337B2 (en
Inventor
Tsutae Shinoda
Yoshinori Miyashita
Akira Otsuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP55011090A priority Critical patent/JPS607337B2/en
Publication of JPS56109432A publication Critical patent/JPS56109432A/en
Publication of JPS607337B2 publication Critical patent/JPS607337B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J11/00—Gas-filled discharge tubes with alternating current induction of the discharge, e.g. alternating current plasma display panels [AC-PDP]; Gas-filled discharge tubes without any main electrode inside the vessel; Gas-filled discharge tubes with at least one main electrode outside the vessel

Abstract

PURPOSE:To prevent a dielectirc material layer from crack, when coating the electrode arranged on a substrate with dielectric material layer, by employing specific relation between the temperature of the substrate and the adhering speed of the dielectric material layer while employing the dielectric layer containing silicon dioxide more than specific amount. CONSTITUTION:Conductive electrodes 2 are arranged with specific pattern on a glass substrate 1 and coated with dielectric material layer 3 then faced each other through gas discharge space 4. Here the dielectric material layer 3 is composed of more than 90wt% of silicon dioxide while the temperature (t) of the substrate is set in the range from 150 deg.C to the softening point of the substrate, then said temperature and the adhering speed R of the dielectric material layer are selected to satisfy the relation R<=17t-2,500. Consequently the crack isn't produced in the dielectric material layer film 3 during thermal processing for forming the discharge panel, resulting in considerable improvement of the quality.
JP55011090A 1980-01-31 1980-01-31 How to manufacture gas discharge panels Expired JPS607337B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP55011090A JPS607337B2 (en) 1980-01-31 1980-01-31 How to manufacture gas discharge panels

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP55011090A JPS607337B2 (en) 1980-01-31 1980-01-31 How to manufacture gas discharge panels

Publications (2)

Publication Number Publication Date
JPS56109432A true JPS56109432A (en) 1981-08-29
JPS607337B2 JPS607337B2 (en) 1985-02-23

Family

ID=11768280

Family Applications (1)

Application Number Title Priority Date Filing Date
JP55011090A Expired JPS607337B2 (en) 1980-01-31 1980-01-31 How to manufacture gas discharge panels

Country Status (1)

Country Link
JP (1) JPS607337B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6450849B1 (en) 1998-07-07 2002-09-17 Fujitsu Limited Method of manufacturing gas discharge display devices using plasma enhanced vapor deposition

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6450849B1 (en) 1998-07-07 2002-09-17 Fujitsu Limited Method of manufacturing gas discharge display devices using plasma enhanced vapor deposition

Also Published As

Publication number Publication date
JPS607337B2 (en) 1985-02-23

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