JPS55143744A - Manufacture of gas discharge panel - Google Patents

Manufacture of gas discharge panel

Info

Publication number
JPS55143744A
JPS55143744A JP5279079A JP5279079A JPS55143744A JP S55143744 A JPS55143744 A JP S55143744A JP 5279079 A JP5279079 A JP 5279079A JP 5279079 A JP5279079 A JP 5279079A JP S55143744 A JPS55143744 A JP S55143744A
Authority
JP
Japan
Prior art keywords
layers
layer
upermost
dielectric layer
high quality
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5279079A
Other languages
Japanese (ja)
Inventor
Akira Otsuka
Toshinori Urade
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP5279079A priority Critical patent/JPS55143744A/en
Publication of JPS55143744A publication Critical patent/JPS55143744A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Gas-Filled Discharge Tubes (AREA)

Abstract

PURPOSE:To produce a high quality dielectric layer having no clack stably with high yield, by forming an encapsulating material layer around a substrate thereafter forming a deposition film having same quality with the upermost layer and coating with a surface layer or a deposition film. CONSTITUTION:Prior to the formation of a surface layer contacting with the gas discharge space of a dielectric layer, encapsulation material layers 6, 16 composed of glass having low melting point are formed around substrates 1, 11 formed with dielectric layers. Then deposition films 7, 17 composed of alumina having same quality with the upermost layers 5, 15 are deposited on the upper face of the upermost layers 5, 15 on the substrates 1, 11 under such condition where the outside at the forming position including the encapsulation material layers 6, 16 is masked for the purpose to form the surface layer. Thereafter surface layers 8, 18 composed of MgO are deposited. Consequently high quality dielectric layer having no clack can be stably formed and high quality indication panel can be produced with high yield.
JP5279079A 1979-04-27 1979-04-27 Manufacture of gas discharge panel Pending JPS55143744A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5279079A JPS55143744A (en) 1979-04-27 1979-04-27 Manufacture of gas discharge panel

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5279079A JPS55143744A (en) 1979-04-27 1979-04-27 Manufacture of gas discharge panel

Publications (1)

Publication Number Publication Date
JPS55143744A true JPS55143744A (en) 1980-11-10

Family

ID=12924622

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5279079A Pending JPS55143744A (en) 1979-04-27 1979-04-27 Manufacture of gas discharge panel

Country Status (1)

Country Link
JP (1) JPS55143744A (en)

Similar Documents

Publication Publication Date Title
JPS5778519A (en) Production of electrochromic display element
IE41938L (en) Depositing by reactive sputtering
SE427832B (en) PROCEDURE FOR COATING THE SURFACE OF GLASS FORM WITH A LAYER OF ATMINSTONE AN OXID OF A TRANSITIONAL ELEMENT OF METALLIC CHARACTERISTICS
JPS55143744A (en) Manufacture of gas discharge panel
EP0132322A3 (en) Thermal crackers for forming pnictide films in high vacuum processes
JPS55143754A (en) Gas discharge panel
JPS57113411A (en) Thin-film head
JPS57167133A (en) Production for magnetic recording medium
JPS5638729A (en) Manufacture of gas discharge panel
JPS5214600A (en) Process for the production of a thin film of silicon carbide
JPS5315755A (en) Manufacture of display panel electrode
JPS575372A (en) Thin film diode and manufacture thereof
JPS5710224A (en) Forming method for silicone single crystalline film
JPS56149749A (en) Face discharge type gas discharge panel
JPS56109432A (en) Manufacture of gas discharge panel
JPS5463653A (en) Dielectric resonator
JPS5655910A (en) Production of optical multilayer film
JPS6424319A (en) Formation of superconductor thin film
JPS55124244A (en) Method of fabricating chip component
JPS5743341A (en) Face discharge type gas discharge panel
JPS5258473A (en) Production of semiconductor device
JPS5621082A (en) Watch dial
JPS5588237A (en) Formation method of fluorescent film for cathode ray tube
Parkanskii Nature of Cathode Surface Layers During the Electro-Spark Deposition of Powder Materials
JPS5654413A (en) Transparent electrode