JPS56110939A - Transfer mask for light exposure - Google Patents

Transfer mask for light exposure

Info

Publication number
JPS56110939A
JPS56110939A JP1220580A JP1220580A JPS56110939A JP S56110939 A JPS56110939 A JP S56110939A JP 1220580 A JP1220580 A JP 1220580A JP 1220580 A JP1220580 A JP 1220580A JP S56110939 A JPS56110939 A JP S56110939A
Authority
JP
Japan
Prior art keywords
silicon
mask
top surface
light shielding
nitride film
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1220580A
Other languages
Japanese (ja)
Inventor
Yuji Okuto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Original Assignee
CHIYOU LSI GIJUTSU KENKYU KUMIAI
CHO LSI GIJUTSU KENKYU KUMIAI
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by CHIYOU LSI GIJUTSU KENKYU KUMIAI, CHO LSI GIJUTSU KENKYU KUMIAI filed Critical CHIYOU LSI GIJUTSU KENKYU KUMIAI
Priority to JP1220580A priority Critical patent/JPS56110939A/en
Publication of JPS56110939A publication Critical patent/JPS56110939A/en
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/54—Absorbers, e.g. of opaque materials

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)

Abstract

PURPOSE:To make the changing of design on a mask easy and reduce process allowances by using a quartz sheet or sapphire sheet as a substrate, using silicon as shielding material and providing a silicon nitride film on the top surface of said silicon. CONSTITUTION:In a mask using a flattened quartz sheet or sapphire sheet 2 as a substrate and amorphous material, polycrystal or single crystal 4 of silicon as a light shielding material, the mask consists of (A) the one provided with a silicon nitride film 3 on the top surface of silicon for light shielding and (B) the one provided with a silicon nitride film 3 of >=500Angstrom thickness via a silicon dioxide film of <=1,000Angstrom on the top surface of the silicon for light shielding.
JP1220580A 1980-02-04 1980-02-04 Transfer mask for light exposure Pending JPS56110939A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP1220580A JPS56110939A (en) 1980-02-04 1980-02-04 Transfer mask for light exposure

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP1220580A JPS56110939A (en) 1980-02-04 1980-02-04 Transfer mask for light exposure

Publications (1)

Publication Number Publication Date
JPS56110939A true JPS56110939A (en) 1981-09-02

Family

ID=11798884

Family Applications (1)

Application Number Title Priority Date Filing Date
JP1220580A Pending JPS56110939A (en) 1980-02-04 1980-02-04 Transfer mask for light exposure

Country Status (1)

Country Link
JP (1) JPS56110939A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192947A (en) * 1984-03-13 1985-10-01 Mitsubishi Electric Corp Photomask material for fabricating semiconductor device
EP0207528A2 (en) * 1985-07-05 1987-01-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Process of producing a photomask
US5173380A (en) * 1990-07-05 1992-12-22 Mitsubishi Denki Kabushiki Kaisha Photomask
US5279911A (en) * 1990-07-23 1994-01-18 Mitsubishi Denki Kabushiki Kaisha Photomask

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60192947A (en) * 1984-03-13 1985-10-01 Mitsubishi Electric Corp Photomask material for fabricating semiconductor device
EP0207528A2 (en) * 1985-07-05 1987-01-07 Max-Planck-Gesellschaft zur Förderung der Wissenschaften e.V. Process of producing a photomask
US5173380A (en) * 1990-07-05 1992-12-22 Mitsubishi Denki Kabushiki Kaisha Photomask
US5279911A (en) * 1990-07-23 1994-01-18 Mitsubishi Denki Kabushiki Kaisha Photomask

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