JPS503787A - - Google Patents

Info

Publication number
JPS503787A
JPS503787A JP48053600A JP5360073A JPS503787A JP S503787 A JPS503787 A JP S503787A JP 48053600 A JP48053600 A JP 48053600A JP 5360073 A JP5360073 A JP 5360073A JP S503787 A JPS503787 A JP S503787A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP48053600A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to JP48053600A priority Critical patent/JPS503787A/ja
Publication of JPS503787A publication Critical patent/JPS503787A/ja
Pending legal-status Critical Current

Links

Landscapes

  • Semiconductor Integrated Circuits (AREA)
  • Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
  • Semiconductor Memories (AREA)
JP48053600A 1973-05-16 1973-05-16 Pending JPS503787A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP48053600A JPS503787A (en) 1973-05-16 1973-05-16

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP48053600A JPS503787A (en) 1973-05-16 1973-05-16

Publications (1)

Publication Number Publication Date
JPS503787A true JPS503787A (en) 1975-01-16

Family

ID=12947357

Family Applications (1)

Application Number Title Priority Date Filing Date
JP48053600A Pending JPS503787A (en) 1973-05-16 1973-05-16

Country Status (1)

Country Link
JP (1) JPS503787A (en)

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5118483A (en) * 1974-08-06 1976-02-14 Matsushita Electric Industrial Co Ltd Zetsuengeeto fet shusekikairo
JPS5175276A (en) * 1974-12-26 1976-06-29 Sanesu Shoko Kk KOSAKUKIKAINIOKERUSEIGYOTAISHONOICHIGIMESEIGYOHO
JPS5493057A (en) * 1978-06-22 1979-07-23 Showa Yuka Kk Method of forming inflation film
JPS5626467A (en) * 1979-08-10 1981-03-14 Toshiba Corp Semiconductor device and the manufacturing process
JPS5658268A (en) * 1979-10-18 1981-05-21 Agency Of Ind Science & Technol Semiconductor device
JPS5683075A (en) * 1979-12-10 1981-07-07 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type field-effect transistor circuit device
JPS56150864A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
JPS56161675A (en) * 1980-05-16 1981-12-12 Fujitsu Ltd Semiconductor device
JPS5753972A (en) * 1980-07-24 1982-03-31 Siemens Ag
JPS5760868A (en) * 1980-09-29 1982-04-13 Seiko Epson Corp Cmos memory cell
JPS57139787A (en) * 1981-02-24 1982-08-28 Matsushita Electric Industrial Co Ltd Reflection type matrix display device
JPS5892260A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp semiconductor equipment
JPS58130568A (en) * 1982-01-29 1983-08-04 Hitachi Ltd Field effect device
JPS5949938A (en) * 1982-09-16 1984-03-22 Denki Kagaku Kogyo Kk Preparation of polystylene family film
JPS59224165A (en) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol Semiconductor device
US4511530A (en) * 1982-10-18 1985-04-16 Unifos Kemi Ab Process for blowing film from linear thermoplastic material
JPS6123359A (en) * 1984-04-27 1986-01-31 テキサス　インスツルメンツ　インコーポレイテッド Integrated cmos device
JPS61121467A (en) * 1984-11-19 1986-06-09 Seiko Epson Corp semiconductor storage device
JPS61222254A (en) * 1985-03-28 1986-10-02 Toshiba Corp Semiconductor memory device
JPH0214566A (en) * 1989-04-10 1990-01-18 Seiko Epson Corp flip flop
JPH0214564A (en) * 1989-04-10 1990-01-18 Seiko Epson Corp CMOS memory cell
JPH0214565A (en) * 1989-04-10 1990-01-18 Seiko Epson Corp random access memory
JPH0221655A (en) * 1989-04-10 1990-01-24 Seiko Epson Corp flip flop
JPH0221656A (en) * 1989-04-10 1990-01-24 Seiko Epson Corp Cmos memory cell
JPH04211165A (en) * 1991-01-28 1992-08-03 Seiko Epson Corp random access memory
US5322664A (en) * 1993-02-02 1994-06-21 Owens-Illinois Labels Inc. Clear film extrusion from an annular die
JP2009538535A (en) * 2006-05-22 2009-11-05 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． Integrated circuit interconnection

Cited By (28)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5118483A (en) * 1974-08-06 1976-02-14 Matsushita Electric Industrial Co Ltd Zetsuengeeto fet shusekikairo
JPS5175276A (en) * 1974-12-26 1976-06-29 Sanesu Shoko Kk KOSAKUKIKAINIOKERUSEIGYOTAISHONOICHIGIMESEIGYOHO
JPS5493057A (en) * 1978-06-22 1979-07-23 Showa Yuka Kk Method of forming inflation film
JPS5626467A (en) * 1979-08-10 1981-03-14 Toshiba Corp Semiconductor device and the manufacturing process
JPS5658268A (en) * 1979-10-18 1981-05-21 Agency Of Ind Science & Technol Semiconductor device
JPS5683075A (en) * 1979-12-10 1981-07-07 Nippon Telegr & Teleph Corp <Ntt> Insulating gate type field-effect transistor circuit device
JPS56150864A (en) * 1980-04-24 1981-11-21 Toshiba Corp Semiconductor device
JPS56161675A (en) * 1980-05-16 1981-12-12 Fujitsu Ltd Semiconductor device
JPS5753972A (en) * 1980-07-24 1982-03-31 Siemens Ag
JPS5760868A (en) * 1980-09-29 1982-04-13 Seiko Epson Corp Cmos memory cell
JPS57139787A (en) * 1981-02-24 1982-08-28 Matsushita Electric Industrial Co Ltd Reflection type matrix display device
JPS5892260A (en) * 1981-11-27 1983-06-01 Mitsubishi Electric Corp semiconductor equipment
JPS58130568A (en) * 1982-01-29 1983-08-04 Hitachi Ltd Field effect device
JPS5949938A (en) * 1982-09-16 1984-03-22 Denki Kagaku Kogyo Kk Preparation of polystylene family film
US4511530A (en) * 1982-10-18 1985-04-16 Unifos Kemi Ab Process for blowing film from linear thermoplastic material
JPS59224165A (en) * 1983-06-03 1984-12-17 Agency Of Ind Science & Technol Semiconductor device
JPS6123359A (en) * 1984-04-27 1986-01-31 テキサス　インスツルメンツ　インコーポレイテッド Integrated cmos device
JPS61121467A (en) * 1984-11-19 1986-06-09 Seiko Epson Corp semiconductor storage device
JPS61222254A (en) * 1985-03-28 1986-10-02 Toshiba Corp Semiconductor memory device
JPH0214566A (en) * 1989-04-10 1990-01-18 Seiko Epson Corp flip flop
JPH0214564A (en) * 1989-04-10 1990-01-18 Seiko Epson Corp CMOS memory cell
JPH0214565A (en) * 1989-04-10 1990-01-18 Seiko Epson Corp random access memory
JPH0221655A (en) * 1989-04-10 1990-01-24 Seiko Epson Corp flip flop
JPH0221656A (en) * 1989-04-10 1990-01-24 Seiko Epson Corp Cmos memory cell
JPH04211165A (en) * 1991-01-28 1992-08-03 Seiko Epson Corp random access memory
US5322664A (en) * 1993-02-02 1994-06-21 Owens-Illinois Labels Inc. Clear film extrusion from an annular die
US5753326A (en) * 1993-02-02 1998-05-19 Owens-Illinois Labels Inc. Clear film extrusion from an annular die
JP2009538535A (en) * 2006-05-22 2009-11-05 ヒューレット−パッカード デベロップメント カンパニー エル．ピー． Integrated circuit interconnection

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