JPS57124468A - Manufacture of solid image pickup device - Google Patents
Manufacture of solid image pickup deviceInfo
- Publication number
- JPS57124468A JPS57124468A JP56010671A JP1067181A JPS57124468A JP S57124468 A JPS57124468 A JP S57124468A JP 56010671 A JP56010671 A JP 56010671A JP 1067181 A JP1067181 A JP 1067181A JP S57124468 A JPS57124468 A JP S57124468A
- Authority
- JP
- Japan
- Prior art keywords
- insulating film
- electrode
- heat treatment
- executed
- drain
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007787 solid Substances 0.000 title 1
- 238000010438 heat treatment Methods 0.000 abstract 4
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 3
- 229910052739 hydrogen Inorganic materials 0.000 abstract 3
- 239000001257 hydrogen Substances 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 238000005275 alloying Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
PURPOSE:To prevent the generation of a crack of a layer insulating film by each selecting the temperature of heat treatment in a hydrogen atmosphere executed after forming drain and source electrodes or an electrode for connecting a photoconductive film to predetermined value. CONSTITUTION:The source electrode 18a and the drain electrode 18a are each shaped to the source and drain regions 13, 14 of a silicon substrate 11 in which a large number of MOS transistors are molded, and the first heat treatment is executed at the temperature of 450 deg.C or higher in the hydrogen atmosphere. The drain electrode 18a is coated with the insulating film, the electrode 21 for connecting the photoconductive film, which ohmic-contacts with the source electrode 18b and extends onto the insulating film 19, is formed, heat treatment is executed at the temperature lower than that of the first heat treatment only by at least 5 deg.C in the hydrogen atmosphere, the photoconductive film 20 is shaped onto the surface, and the whole is heated. Accordingly, the alloying of the drain electrode and the silicon substrate hardly advances when forming the insulating film, and the crack of the insulating film can be prevented.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56010671A JPS57124468A (en) | 1981-01-26 | 1981-01-26 | Manufacture of solid image pickup device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP56010671A JPS57124468A (en) | 1981-01-26 | 1981-01-26 | Manufacture of solid image pickup device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS57124468A true JPS57124468A (en) | 1982-08-03 |
| JPS6141144B2 JPS6141144B2 (en) | 1986-09-12 |
Family
ID=11756707
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP56010671A Granted JPS57124468A (en) | 1981-01-26 | 1981-01-26 | Manufacture of solid image pickup device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS57124468A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016039328A (en) * | 2014-08-08 | 2016-03-22 | キヤノン株式会社 | Photoelectric conversion device, imaging system, and method of manufacturing photoelectric conversion device |
-
1981
- 1981-01-26 JP JP56010671A patent/JPS57124468A/en active Granted
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2016039328A (en) * | 2014-08-08 | 2016-03-22 | キヤノン株式会社 | Photoelectric conversion device, imaging system, and method of manufacturing photoelectric conversion device |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6141144B2 (en) | 1986-09-12 |
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