JPS6425420A - Removal of resist and device therefor - Google Patents

Abstract

PURPOSE:To suppress etching of a sample plane and remove the resist of the sample plane at great speed by removing the resist of the sample plane through etching treatment at great speed with a gas plasma of a mixed gas consisting of a gas for removing the resist of the sample plane and a gas for accelerating the removal of the resist and by removing the remaining resist through etching treatment, thereby using only the gas plasma for removing the resist when the resist is removed halfway. CONSTITUTION:An oxygen gas fed from a gas supply source 141 and a carbon gas tetrafluoride fed from the gas supply source 142 are mixed into a mixed gas and are introduced into a lower stage part of a space 90 and the above gas mixture is treated by microwave magnetic field generated through a discharge tube 120 to obtain a state of plasma. The resist is removed by this gas plasma. When the removal of the resist comes to an end or immediately before terminating its removal, the introduction of the carbon gas tetrafluoride fed from the gas supply source 142 to the lower stage part of the space 90 stops supplying and only the oxygen gas is introduced from the gas supply source 141. When excess etching is performed by using the gas plasma consisting of oxygen gas, a silicon oxide forming a base plane is not etched very much. Even though ethane hexafluoride is used as a resist removal acceleration gas, the same effect is obtained.