JPS6459819A - Dry etching - Google Patents
Dry etchingInfo
- Publication number
- JPS6459819A JPS6459819A JP21529287A JP21529287A JPS6459819A JP S6459819 A JPS6459819 A JP S6459819A JP 21529287 A JP21529287 A JP 21529287A JP 21529287 A JP21529287 A JP 21529287A JP S6459819 A JPS6459819 A JP S6459819A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- nozzle
- introduction pipe
- gas introduction
- processed
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Landscapes
- Drying Of Semiconductors (AREA)
Abstract
PURPOSE:To completely ash an organic polymer film by a method wherein a first gas containing activated fluorine and a second gas containing at least a hydrogen atom are mixed and this mixture acts on a substance to be processed. CONSTITUTION:A wafer 2 is mounted on a stage 3 inside a vacuum container 1; a first gas introduction pipe 6 is connected via a discharge tube 5 to a gas nozzle 4 opened above the stage. Micro-waves electric power is supplied to the discharge tube 5 via a waveguide 7. A second gas introduction pipe 9 is connected to a small nozzle 8 arranged concentrically inside the nozzle 4. In this apparatus, NF3 gas flows from the first gas introduction pipe 6; a plasma is generated inside the discharge tube 5; a generated F* is introduced to the surface of the object 2 to be processed through the gas nozzle 4; at the same time, H2O is introduced through the small nozzle 8 to the surface of the object 2 to be processed from the second gas introduction pipe 9. If an organic polymer film is ashed in this manner, a high-speed ashing operation can be executed with good reproducibility.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215292A JPH0670988B2 (en) | 1987-08-31 | 1987-08-31 | Dry etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP62215292A JPH0670988B2 (en) | 1987-08-31 | 1987-08-31 | Dry etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS6459819A true JPS6459819A (en) | 1989-03-07 |
JPH0670988B2 JPH0670988B2 (en) | 1994-09-07 |
Family
ID=16669905
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP62215292A Expired - Lifetime JPH0670988B2 (en) | 1987-08-31 | 1987-08-31 | Dry etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPH0670988B2 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH031530A (en) * | 1989-05-29 | 1991-01-08 | Tokuda Seisakusho Ltd | Dry etching device |
KR100293918B1 (en) * | 1998-05-04 | 2001-11-30 | 김영환 | Method for removing polymer formed in metal etching step |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856421A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Manufacture of semiconductor device |
JPS60109233A (en) * | 1983-11-17 | 1985-06-14 | Fujitsu Ltd | Plasma treatment device |
JPS60194524A (en) * | 1984-03-16 | 1985-10-03 | Hitachi Ltd | Controlling method of plasma treatment |
JPS61127877A (en) * | 1984-11-27 | 1986-06-16 | Tokuda Seisakusho Ltd | Dry etching device |
-
1987
- 1987-08-31 JP JP62215292A patent/JPH0670988B2/en not_active Expired - Lifetime
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5856421A (en) * | 1981-09-30 | 1983-04-04 | Toshiba Corp | Manufacture of semiconductor device |
JPS60109233A (en) * | 1983-11-17 | 1985-06-14 | Fujitsu Ltd | Plasma treatment device |
JPS60194524A (en) * | 1984-03-16 | 1985-10-03 | Hitachi Ltd | Controlling method of plasma treatment |
JPS61127877A (en) * | 1984-11-27 | 1986-06-16 | Tokuda Seisakusho Ltd | Dry etching device |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH031530A (en) * | 1989-05-29 | 1991-01-08 | Tokuda Seisakusho Ltd | Dry etching device |
KR100293918B1 (en) * | 1998-05-04 | 2001-11-30 | 김영환 | Method for removing polymer formed in metal etching step |
Also Published As
Publication number | Publication date |
---|---|
JPH0670988B2 (en) | 1994-09-07 |
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