JPS6459819A - Dry etching - Google Patents

Dry etching

Info

Publication number
JPS6459819A
JPS6459819A JP21529287A JP21529287A JPS6459819A JP S6459819 A JPS6459819 A JP S6459819A JP 21529287 A JP21529287 A JP 21529287A JP 21529287 A JP21529287 A JP 21529287A JP S6459819 A JPS6459819 A JP S6459819A
Authority
JP
Japan
Prior art keywords
gas
nozzle
introduction pipe
gas introduction
processed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP21529287A
Other languages
Japanese (ja)
Other versions
JPH0670988B2 (en
Inventor
Hiroyuki Hara
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tokuda Seisakusho Co Ltd
Original Assignee
Tokuda Seisakusho Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokuda Seisakusho Co Ltd filed Critical Tokuda Seisakusho Co Ltd
Priority to JP62215292A priority Critical patent/JPH0670988B2/en
Publication of JPS6459819A publication Critical patent/JPS6459819A/en
Publication of JPH0670988B2 publication Critical patent/JPH0670988B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Landscapes

  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To completely ash an organic polymer film by a method wherein a first gas containing activated fluorine and a second gas containing at least a hydrogen atom are mixed and this mixture acts on a substance to be processed. CONSTITUTION:A wafer 2 is mounted on a stage 3 inside a vacuum container 1; a first gas introduction pipe 6 is connected via a discharge tube 5 to a gas nozzle 4 opened above the stage. Micro-waves electric power is supplied to the discharge tube 5 via a waveguide 7. A second gas introduction pipe 9 is connected to a small nozzle 8 arranged concentrically inside the nozzle 4. In this apparatus, NF3 gas flows from the first gas introduction pipe 6; a plasma is generated inside the discharge tube 5; a generated F* is introduced to the surface of the object 2 to be processed through the gas nozzle 4; at the same time, H2O is introduced through the small nozzle 8 to the surface of the object 2 to be processed from the second gas introduction pipe 9. If an organic polymer film is ashed in this manner, a high-speed ashing operation can be executed with good reproducibility.
JP62215292A 1987-08-31 1987-08-31 Dry etching method Expired - Lifetime JPH0670988B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP62215292A JPH0670988B2 (en) 1987-08-31 1987-08-31 Dry etching method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP62215292A JPH0670988B2 (en) 1987-08-31 1987-08-31 Dry etching method

Publications (2)

Publication Number Publication Date
JPS6459819A true JPS6459819A (en) 1989-03-07
JPH0670988B2 JPH0670988B2 (en) 1994-09-07

Family

ID=16669905

Family Applications (1)

Application Number Title Priority Date Filing Date
JP62215292A Expired - Lifetime JPH0670988B2 (en) 1987-08-31 1987-08-31 Dry etching method

Country Status (1)

Country Link
JP (1) JPH0670988B2 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH031530A (en) * 1989-05-29 1991-01-08 Tokuda Seisakusho Ltd Dry etching device
KR100293918B1 (en) * 1998-05-04 2001-11-30 김영환 Method for removing polymer formed in metal etching step

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856421A (en) * 1981-09-30 1983-04-04 Toshiba Corp Manufacture of semiconductor device
JPS60109233A (en) * 1983-11-17 1985-06-14 Fujitsu Ltd Plasma treatment device
JPS60194524A (en) * 1984-03-16 1985-10-03 Hitachi Ltd Controlling method of plasma treatment
JPS61127877A (en) * 1984-11-27 1986-06-16 Tokuda Seisakusho Ltd Dry etching device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5856421A (en) * 1981-09-30 1983-04-04 Toshiba Corp Manufacture of semiconductor device
JPS60109233A (en) * 1983-11-17 1985-06-14 Fujitsu Ltd Plasma treatment device
JPS60194524A (en) * 1984-03-16 1985-10-03 Hitachi Ltd Controlling method of plasma treatment
JPS61127877A (en) * 1984-11-27 1986-06-16 Tokuda Seisakusho Ltd Dry etching device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH031530A (en) * 1989-05-29 1991-01-08 Tokuda Seisakusho Ltd Dry etching device
KR100293918B1 (en) * 1998-05-04 2001-11-30 김영환 Method for removing polymer formed in metal etching step

Also Published As

Publication number Publication date
JPH0670988B2 (en) 1994-09-07

Similar Documents

Publication Publication Date Title
US5226056A (en) Plasma ashing method and apparatus therefor
KR950027986A (en) Manufacturing method and apparatus for semiconductor device
JPS56158873A (en) Dry etching method
GB9322966D0 (en) Method for making a semiconductor and apparatus for the same
KR950025841A (en) Plasma Ashing Method with Oxygen Gas Pretreatment
KR20020070820A (en) Apparatus and method for semiconductor wafer etching
JPS6459819A (en) Dry etching
JPS54124683A (en) Processing method of silicon wafer
JPS5587438A (en) Manufacture of semiconductor device
JPS56123377A (en) Plasma cleaning and etching method
JPS56105480A (en) Plasma etching method
JPS5727024A (en) Washing of reactor for plasma cvd method
JPS6425420A (en) Removal of resist and device therefor
JPS5647572A (en) Etching method of indium oxide film
JPS57202733A (en) Dry etching device
JPS57131373A (en) Plasma etching device
JPS647623A (en) Cleaning method for si surface by dry type
US20020020431A1 (en) Method and apparatus for removing a mobile ion in a wafer
JP2967681B2 (en) Microwave plasma processing equipment
JPS57114235A (en) Cleaning of semiconductor substrate
JPS6423537A (en) Plasma processing device
JPS5539690A (en) Plasma etching device
JPS5735323A (en) Removal of photoresist film
JPS5756923A (en) Manufacture of thin film
JPH1145873A (en) Plasma-ashing method