JPS55107780A - Etching method - Google Patents
Etching methodInfo
- Publication number
- JPS55107780A JPS55107780A JP1225079A JP1225079A JPS55107780A JP S55107780 A JPS55107780 A JP S55107780A JP 1225079 A JP1225079 A JP 1225079A JP 1225079 A JP1225079 A JP 1225079A JP S55107780 A JPS55107780 A JP S55107780A
- Authority
- JP
- Japan
- Prior art keywords
- etching
- gas
- pcl
- silicon
- sputtering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Abstract
PURPOSE: To form an etching section having excellent dimensional accuracy at a high selectivity, by, in etching of silicon material to be etched by use of reactive sputtering method, using chloride gas as the sputtering gas.
CONSTITUTION: At a prescribed position in a high frequency sputtering apparatus equipped with flat plate electrodes facing to each other is placed a material to be etched made of single-crystal or polycrystal silicon, and etching is conducted using chloride such as PCl3, CCl4 as a sputtering gas, then the etching speed reaches the maximum about 170mm/min., at a power density 0.3W/cm2, and PCl3 gas press. about 6Pa. The etching speed is very small for Si3N4 etc. at the same gas press. Hence use of Si3N4 as the mask makes it possible to etch silicon with a high selectivity.
COPYRIGHT: (C)1980,JPO&Japio
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1225079A JPS55107780A (en) | 1979-02-07 | 1979-02-07 | Etching method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP1225079A JPS55107780A (en) | 1979-02-07 | 1979-02-07 | Etching method |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP7289983A Division JPS58194341A (en) | 1983-04-27 | 1983-04-27 | Etching method |
Publications (2)
Publication Number | Publication Date |
---|---|
JPS55107780A true JPS55107780A (en) | 1980-08-19 |
JPS5637306B2 JPS5637306B2 (en) | 1981-08-29 |
Family
ID=11800110
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP1225079A Granted JPS55107780A (en) | 1979-02-07 | 1979-02-07 | Etching method |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS55107780A (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990011614A1 (en) * | 1989-03-24 | 1990-10-04 | Hitachi, Ltd. | Method of exposure to charged beam, apparatus therefor, aperture diaphragm and method of producing the same |
US5334845A (en) * | 1989-03-24 | 1994-08-02 | Hitachi Limited | Charged beam exposure method and apparatus as well as aperture stop and production method thereof |
JPH07169756A (en) * | 1994-11-07 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
JPH08306675A (en) * | 1996-05-13 | 1996-11-22 | Semiconductor Energy Lab Co Ltd | Plasma etching |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR102553393B1 (en) * | 2019-11-06 | 2023-07-07 | 한국자동차연구원 | Energy regeneration apparatus |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3994793A (en) * | 1975-05-22 | 1976-11-30 | International Business Machines Corporation | Reactive ion etching of aluminum |
JPS529648A (en) * | 1975-07-09 | 1977-01-25 | Ibm | Method of selectively ionnetching silicon |
US4104086A (en) * | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
JPS53135843A (en) * | 1977-05-02 | 1978-11-27 | Hitachi Ltd | Etching process for al and al alloy |
JPS541245A (en) * | 1977-06-06 | 1979-01-08 | Hitachi Ltd | Method of etching a1 and a1-based alloy |
-
1979
- 1979-02-07 JP JP1225079A patent/JPS55107780A/en active Granted
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3994793A (en) * | 1975-05-22 | 1976-11-30 | International Business Machines Corporation | Reactive ion etching of aluminum |
JPS529648A (en) * | 1975-07-09 | 1977-01-25 | Ibm | Method of selectively ionnetching silicon |
JPS53135843A (en) * | 1977-05-02 | 1978-11-27 | Hitachi Ltd | Etching process for al and al alloy |
JPS541245A (en) * | 1977-06-06 | 1979-01-08 | Hitachi Ltd | Method of etching a1 and a1-based alloy |
US4104086A (en) * | 1977-08-15 | 1978-08-01 | International Business Machines Corporation | Method for forming isolated regions of silicon utilizing reactive ion etching |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO1990011614A1 (en) * | 1989-03-24 | 1990-10-04 | Hitachi, Ltd. | Method of exposure to charged beam, apparatus therefor, aperture diaphragm and method of producing the same |
US5334845A (en) * | 1989-03-24 | 1994-08-02 | Hitachi Limited | Charged beam exposure method and apparatus as well as aperture stop and production method thereof |
JPH07169756A (en) * | 1994-11-07 | 1995-07-04 | Semiconductor Energy Lab Co Ltd | Plasma etching method |
JPH08306675A (en) * | 1996-05-13 | 1996-11-22 | Semiconductor Energy Lab Co Ltd | Plasma etching |
Also Published As
Publication number | Publication date |
---|---|
JPS5637306B2 (en) | 1981-08-29 |
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