JPS57157544A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS57157544A
JPS57157544A JP4249681A JP4249681A JPS57157544A JP S57157544 A JPS57157544 A JP S57157544A JP 4249681 A JP4249681 A JP 4249681A JP 4249681 A JP4249681 A JP 4249681A JP S57157544 A JPS57157544 A JP S57157544A
Authority
JP
Japan
Prior art keywords
film
opening
coated
evaporated
onto
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP4249681A
Other languages
Japanese (ja)
Inventor
Ryozo Nakayama
Sunao Shibata
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP4249681A priority Critical patent/JPS57157544A/en
Publication of JPS57157544A publication Critical patent/JPS57157544A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material

Abstract

PURPOSE:To prevent the breaking of a wiring film at stages, and to improve yield by a method wherein a semiconductor substrate is coated with an insulating film, a predetermined opening is bored, a metallic film is evaporated from the vertical direction of the opening, the metallic film coated onto the insulating film is removed, and the wiring film contacting with the metallic film in the opening is evaporated onto the whole surface. CONSTITUTION:The SiO2 film 32 functioning as a layer insulating film is deposited onto the semiconductor substrate 31 through a CVD method, and the opening is bored through reactive ion etching using a mixed gas consisting of CF4 and H2. The device is arranged so that the substrate 31 and evaporating particles from the target of a sputtering device are vertically positioned, and the Al film 33 is evaporated. Accordingly, the inside of the opening and the Al film 33 coated onto the film 32 around the opening are intercepted, and the whole surface is coated with the photo-resist film 34. The film 34 and the film 33 on the film 32 are removed through reactive ion etching by using the mixed gas of CCl4 and Cl2, and the film 34 remaining in a surface layer section in the opening is removed through O2 plasma etching. The whole surface is coated with an Al film 35 while the film 35 is contacted with the film 33 remaining in the opening.
JP4249681A 1981-03-25 1981-03-25 Manufacture of semiconductor device Pending JPS57157544A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP4249681A JPS57157544A (en) 1981-03-25 1981-03-25 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP4249681A JPS57157544A (en) 1981-03-25 1981-03-25 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS57157544A true JPS57157544A (en) 1982-09-29

Family

ID=12637664

Family Applications (1)

Application Number Title Priority Date Filing Date
JP4249681A Pending JPS57157544A (en) 1981-03-25 1981-03-25 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS57157544A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60227441A (en) * 1984-04-26 1985-11-12 Toppan Printing Co Ltd Production of integrated circuit
JPS6321855A (en) * 1986-07-15 1988-01-29 Mitsubishi Electric Corp Manufacture of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60227441A (en) * 1984-04-26 1985-11-12 Toppan Printing Co Ltd Production of integrated circuit
JPS6321855A (en) * 1986-07-15 1988-01-29 Mitsubishi Electric Corp Manufacture of semiconductor device

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