JPS6321855A - Manufacture of semiconductor device - Google Patents

Manufacture of semiconductor device

Info

Publication number
JPS6321855A
JPS6321855A JP16712386A JP16712386A JPS6321855A JP S6321855 A JPS6321855 A JP S6321855A JP 16712386 A JP16712386 A JP 16712386A JP 16712386 A JP16712386 A JP 16712386A JP S6321855 A JPS6321855 A JP S6321855A
Authority
JP
Japan
Prior art keywords
thickness
hole
film
wirings
electrode wirings
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16712386A
Other languages
Japanese (ja)
Inventor
Mitsuyoshi Nakamura
Isao Furuta
Hidefumi Kuroki
Hajime Arai
Masaaki Ikegami
Eisuke Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP16712386A priority Critical patent/JPS6321855A/en
Publication of JPS6321855A publication Critical patent/JPS6321855A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE: To reduce the difference of the thickness between the electrode wirings out of a contact hole and the film thereby to improve the uniformity of the film thickness of the electrode wirings by increasing the thicknesses of the wirings to become equal on the side and the bottom of the hole.
CONSTITUTION: A contact hole 6b is formed in an insulating film 3 on a semiconductor substrate 1, and a first conductive material 4e is buried to cover it. Then, it is so etched as to allow a conductive material 4h to remain in the bottom of the hole 6b. Then, a second conductive material 4c is so buried as to cover the hole 6b, and etched to so form electrode wirings 4d as to increase the thickness of the film in the hole 6b. Thus, the difference of the thickness between electrode wirings 4i and electrode wirings 4c is reduced to improve the uniformity of the thickness of the film of the whole wirings 4d.
COPYRIGHT: (C)1988,JPO&Japio
JP16712386A 1986-07-15 1986-07-15 Manufacture of semiconductor device Pending JPS6321855A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16712386A JPS6321855A (en) 1986-07-15 1986-07-15 Manufacture of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16712386A JPS6321855A (en) 1986-07-15 1986-07-15 Manufacture of semiconductor device

Publications (1)

Publication Number Publication Date
JPS6321855A true JPS6321855A (en) 1988-01-29

Family

ID=15843865

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16712386A Pending JPS6321855A (en) 1986-07-15 1986-07-15 Manufacture of semiconductor device

Country Status (1)

Country Link
JP (1) JPS6321855A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01266718A (en) * 1988-04-19 1989-10-24 Fujitsu Ltd Production of semiconductor device

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157545A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS57157544A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS6194345A (en) * 1984-10-15 1986-05-13 Sumitomo Electric Ind Ltd Wiring method of integrated circuit
JPS61124154A (en) * 1984-11-20 1986-06-11 Nec Corp Manufacture of semiconductor device

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS57157545A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS57157544A (en) * 1981-03-25 1982-09-29 Toshiba Corp Manufacture of semiconductor device
JPS6194345A (en) * 1984-10-15 1986-05-13 Sumitomo Electric Ind Ltd Wiring method of integrated circuit
JPS61124154A (en) * 1984-11-20 1986-06-11 Nec Corp Manufacture of semiconductor device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01266718A (en) * 1988-04-19 1989-10-24 Fujitsu Ltd Production of semiconductor device

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