JPS5591187A - Method of forming electrode for semiconductor device - Google Patents

Method of forming electrode for semiconductor device

Info

Publication number
JPS5591187A
JPS5591187A JP16578278A JP16578278A JPS5591187A JP S5591187 A JPS5591187 A JP S5591187A JP 16578278 A JP16578278 A JP 16578278A JP 16578278 A JP16578278 A JP 16578278A JP S5591187 A JPS5591187 A JP S5591187A
Authority
JP
Japan
Prior art keywords
electrode
layer
solution
solution containing
alloy
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16578278A
Other languages
Japanese (ja)
Other versions
JPS5928073B2 (en
Inventor
Susumu Furuike
Toshio Matsuda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electronics Corp filed Critical Matsushita Electronics Corp
Priority to JP53165782A priority Critical patent/JPS5928073B2/en
Publication of JPS5591187A publication Critical patent/JPS5591187A/en
Publication of JPS5928073B2 publication Critical patent/JPS5928073B2/en
Expired legal-status Critical Current

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  • Led Devices (AREA)

Abstract

PURPOSE: To provide a partial electrode of predetermined shape by etching an AuSi or AuGe alloy electrode using a first solution containing phosphoric acid, nitric acid and fluoric acid and a second solution containing iodine and potassium iodide each once and then etching it with denatured layer exposed with the first solution.
CONSTITUTION: An LED having predetermined alloy electrode layer is dipped in the first solution containing phosphoric acid, nitric acid, fluoric acid and water at 5:3:1:1 by volumetric ratio to etch thereby an electrode for predetermined time to thereby selectively etch oxide and alloy layer on the surface of the electrode layer. An electrode layer 2 is etched with second solution containing 25g iodine, 50g potassium iodide and 500cc water. When the electrode layer is again etched with the first solution with the electrode 2 as a mask, the modified layer 3 having the same composition as the alloy layer is etched. Since the first solution does not almost etch the LED substrate 1, the exposed surface does not become rough but provides extremely preferable light reflecting rate.
COPYRIGHT: (C)1980,JPO&Japio
JP53165782A 1978-12-27 1978-12-27 Method for forming electrodes for semiconductor devices Expired JPS5928073B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP53165782A JPS5928073B2 (en) 1978-12-27 1978-12-27 Method for forming electrodes for semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP53165782A JPS5928073B2 (en) 1978-12-27 1978-12-27 Method for forming electrodes for semiconductor devices

Publications (2)

Publication Number Publication Date
JPS5591187A true JPS5591187A (en) 1980-07-10
JPS5928073B2 JPS5928073B2 (en) 1984-07-10

Family

ID=15818904

Family Applications (1)

Application Number Title Priority Date Filing Date
JP53165782A Expired JPS5928073B2 (en) 1978-12-27 1978-12-27 Method for forming electrodes for semiconductor devices

Country Status (1)

Country Link
JP (1) JPS5928073B2 (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104082A (en) * 1985-07-25 1987-05-14 Nec Corp Forming method for back surface electrode
JPS6384125A (en) * 1986-09-29 1988-04-14 Nec Corp Method for forming electrode of compound semiconductor
US6577005B1 (en) * 1997-11-27 2003-06-10 Kabushiki Kaishia Toshiba Fine protuberance structure and method of production thereof

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62104082A (en) * 1985-07-25 1987-05-14 Nec Corp Forming method for back surface electrode
JPS6384125A (en) * 1986-09-29 1988-04-14 Nec Corp Method for forming electrode of compound semiconductor
US6577005B1 (en) * 1997-11-27 2003-06-10 Kabushiki Kaishia Toshiba Fine protuberance structure and method of production thereof

Also Published As

Publication number Publication date
JPS5928073B2 (en) 1984-07-10

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