JPS6484621A - Plasma processor - Google Patents

Plasma processor

Info

Publication number
JPS6484621A
JPS6484621A JP24063087A JP24063087A JPS6484621A JP S6484621 A JPS6484621 A JP S6484621A JP 24063087 A JP24063087 A JP 24063087A JP 24063087 A JP24063087 A JP 24063087A JP S6484621 A JPS6484621 A JP S6484621A
Authority
JP
Japan
Prior art keywords
frequency power
electrode
pressure
hollow cathode
vessel
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24063087A
Other languages
Japanese (ja)
Inventor
Jun Kanamori
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Oki Electric Industry Co Ltd
Original Assignee
Oki Electric Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Oki Electric Industry Co Ltd filed Critical Oki Electric Industry Co Ltd
Priority to JP24063087A priority Critical patent/JPS6484621A/en
Publication of JPS6484621A publication Critical patent/JPS6484621A/en
Pending legal-status Critical Current

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  • Drying Of Semiconductors (AREA)

Abstract

PURPOSE:To produce plasma in excellent evenness and high density for performing etching process with high precision by a method wherein a cylindrical hollow cathode to be impressed with high-frequency power is provided on the position surrounding a holding electrode and an opposite electrode in a pressure-reduced vessel. CONSTITUTION:A holding electrode 22 to hold a plasma-processed specimen 21 and an opposite electrode 24 arranged opposite to the electrode 22 are provided in a pressure-reduced vessel 20 to be pressure-reduced and exhausted. A processing gas is led into the vessel 20 to produce plasma by impressing high-frequency power from a high-frequency power supply 26. At this time, a cylindrical hollow cathode 25 connecting to the power supply 26 is provided on the position surrounding the electrodes 22 and 24. Finally, the hollow cathode discharge is caused by impressing the electrodes 25 with high-frequency power to produce plasma. Through these procedures, etching process can be performed with high precision.
JP24063087A 1987-09-28 1987-09-28 Plasma processor Pending JPS6484621A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24063087A JPS6484621A (en) 1987-09-28 1987-09-28 Plasma processor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24063087A JPS6484621A (en) 1987-09-28 1987-09-28 Plasma processor

Publications (1)

Publication Number Publication Date
JPS6484621A true JPS6484621A (en) 1989-03-29

Family

ID=17062355

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24063087A Pending JPS6484621A (en) 1987-09-28 1987-09-28 Plasma processor

Country Status (1)

Country Link
JP (1) JPS6484621A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012038682A (en) * 2010-08-11 2012-02-23 Tokyo Electron Ltd Plasma processing apparatus and plasma control method
JP2017022392A (en) * 2011-04-11 2017-01-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ E-beam enhanced decoupled plasma source for semiconductor processing

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012038682A (en) * 2010-08-11 2012-02-23 Tokyo Electron Ltd Plasma processing apparatus and plasma control method
JP2017022392A (en) * 2011-04-11 2017-01-26 ラム リサーチ コーポレーションＬａｍ Ｒｅｓｅａｒｃｈ Ｃｏｒｐｏｒａｔｉｏｎ E-beam enhanced decoupled plasma source for semiconductor processing

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