JPS648612A - Compound semiconductor device - Google Patents
Compound semiconductor deviceInfo
- Publication number
- JPS648612A JPS648612A JP16448287A JP16448287A JPS648612A JP S648612 A JPS648612 A JP S648612A JP 16448287 A JP16448287 A JP 16448287A JP 16448287 A JP16448287 A JP 16448287A JP S648612 A JPS648612 A JP S648612A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- gaas
- deposited
- temperature
- cracks
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To prevent generation of migration, etc., of electrode metal by filling cracks generated within a semiconductor layer with a semiconductor material of amorphous or miniaturized grain size polycrystal structure in a compound semiconductor device depositing a compound semiconductor layer on a substrate. CONSTITUTION:A GaAs layer 3 is deposited in the thickness of 3.5mum or more on a Si substrate 1 through a buffer layer 2. After GaAs layer is deposited at 700 deg.C and an interprocess device is then cooled up to a temperature near the room temperature, cracks 4 are generated on the GaAs layer 3 due to the difference of thermal expansion coefficients of Si and GaAs. Next, temperature is then raised again upto about 400 deg.C within the furnace and thereby GaAlAs 5 is deposited in the thickness of about 0.05mum. This low temperature deposited layer 5 has amorphous or miniature grain size polycrystal structure. Thereafter, if temperature is lowered again to the room temperature, further cracks are no longer recognized because the low temperature deposition layer 5 filling the recessed portions of cracks 4 alleviates stress resulting from difference of thermal expansion coefficients of GaAs and Si. A solar battery element or light emitting diode can be formed by forming a metal layer 6 to the surface of such semiconductor substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16448287A JP2565908B2 (en) | 1987-06-30 | 1987-06-30 | Compound semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16448287A JP2565908B2 (en) | 1987-06-30 | 1987-06-30 | Compound semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS648612A true JPS648612A (en) | 1989-01-12 |
| JP2565908B2 JP2565908B2 (en) | 1996-12-18 |
Family
ID=15794010
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16448287A Expired - Fee Related JP2565908B2 (en) | 1987-06-30 | 1987-06-30 | Compound semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP2565908B2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5145793A (en) * | 1990-04-13 | 1992-09-08 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing a gallium arsenide solar cell on a silicon substrate |
| JP2013516164A (en) * | 2010-01-04 | 2013-05-13 | アクタ アルガ | Photobioreactor in a closed environment for photosynthetic microbial culture |
-
1987
- 1987-06-30 JP JP16448287A patent/JP2565908B2/en not_active Expired - Fee Related
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5145793A (en) * | 1990-04-13 | 1992-09-08 | Mitsubishi Denki Kabushiki Kaisha | Manufacturing a gallium arsenide solar cell on a silicon substrate |
| JP2013516164A (en) * | 2010-01-04 | 2013-05-13 | アクタ アルガ | Photobioreactor in a closed environment for photosynthetic microbial culture |
| JP2016105727A (en) * | 2010-01-04 | 2016-06-16 | アクタ アルガＡｃｔａ Ａｌｇａ | Photobioreactor in closed environment for cultivating photosynthetic micro-organisms |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2565908B2 (en) | 1996-12-18 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |