JPS5643775A - Production of solar battery - Google Patents

Production of solar battery

Info

Publication number
JPS5643775A
JPS5643775A JP11980479A JP11980479A JPS5643775A JP S5643775 A JPS5643775 A JP S5643775A JP 11980479 A JP11980479 A JP 11980479A JP 11980479 A JP11980479 A JP 11980479A JP S5643775 A JPS5643775 A JP S5643775A
Authority
JP
Japan
Prior art keywords
production
solar battery
atom
substrate
amorphous
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP11980479A
Other languages
Japanese (ja)
Inventor
Toshio Kano
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Seiko Epson Corp
Suwa Seikosha KK
Original Assignee
Seiko Epson Corp
Suwa Seikosha KK
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Seiko Epson Corp, Suwa Seikosha KK filed Critical Seiko Epson Corp
Priority to JP11980479A priority Critical patent/JPS5643775A/en
Publication of JPS5643775A publication Critical patent/JPS5643775A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/20—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials
    • H01L31/202—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof such devices or parts thereof comprising amorphous semiconductor materials including only elements of Group IV of the Periodic Table
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To obtain a stable PN characteristic and conversion efficiency by implanting a specific atom into a thin film silicon by ion implantation after an amorphous silicon is formed on the substrate up to a given thickness. CONSTITUTION:A lower electrode 2 is formed on a glass substrate 1 and amorphous silicons 3, 4 and 5 of P-I-N are laminated thereon. Then, atom such as H, Cl, F, Br and I is implanted from the surface by iron implantation. Following an annealing at 400 deg.C, Al is evaporated as an upper electrode 6.
JP11980479A 1979-09-18 1979-09-18 Production of solar battery Pending JPS5643775A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11980479A JPS5643775A (en) 1979-09-18 1979-09-18 Production of solar battery

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11980479A JPS5643775A (en) 1979-09-18 1979-09-18 Production of solar battery

Publications (1)

Publication Number Publication Date
JPS5643775A true JPS5643775A (en) 1981-04-22

Family

ID=14770627

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11980479A Pending JPS5643775A (en) 1979-09-18 1979-09-18 Production of solar battery

Country Status (1)

Country Link
JP (1) JPS5643775A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823487A (en) * 1981-08-06 1983-02-12 Agency Of Ind Science & Technol Manufacture of polycrystal silicon solar cell
JPS596942A (en) * 1982-07-01 1984-01-14 Matsushita Electric Ind Co Ltd Preparation of amorphous thin film element
US6534381B2 (en) * 1999-01-08 2003-03-18 Silicon Genesis Corporation Method for fabricating multi-layered substrates
CN104362220A (en) * 2014-11-13 2015-02-18 京东方科技集团股份有限公司 Method for manufacturing thin film solar cell and thin film solar cell

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5823487A (en) * 1981-08-06 1983-02-12 Agency Of Ind Science & Technol Manufacture of polycrystal silicon solar cell
JPS6244863B2 (en) * 1981-08-06 1987-09-22 Kogyo Gijutsuin
JPS596942A (en) * 1982-07-01 1984-01-14 Matsushita Electric Ind Co Ltd Preparation of amorphous thin film element
US6534381B2 (en) * 1999-01-08 2003-03-18 Silicon Genesis Corporation Method for fabricating multi-layered substrates
CN104362220A (en) * 2014-11-13 2015-02-18 京东方科技集团股份有限公司 Method for manufacturing thin film solar cell and thin film solar cell

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