CN111785615A - Boron doping method of solar cell - Google Patents
Boron doping method of solar cell Download PDFInfo
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- CN111785615A CN111785615A CN202010667296.8A CN202010667296A CN111785615A CN 111785615 A CN111785615 A CN 111785615A CN 202010667296 A CN202010667296 A CN 202010667296A CN 111785615 A CN111785615 A CN 111785615A
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- boron
- heat treatment
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- 229910052796 boron Inorganic materials 0.000 title claims abstract description 66
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 title claims abstract description 63
- 238000000034 method Methods 0.000 title claims abstract description 27
- 238000010438 heat treatment Methods 0.000 claims abstract description 36
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 20
- 239000010703 silicon Substances 0.000 claims abstract description 20
- 239000002002 slurry Substances 0.000 claims abstract description 19
- 238000000151 deposition Methods 0.000 claims abstract description 10
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 238000007639 printing Methods 0.000 claims description 10
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 6
- 239000001301 oxygen Substances 0.000 claims description 6
- 229910052760 oxygen Inorganic materials 0.000 claims description 6
- 229910052810 boron oxide Inorganic materials 0.000 claims description 4
- JKWMSGQKBLHBQQ-UHFFFAOYSA-N diboron trioxide Chemical compound O=BOB=O JKWMSGQKBLHBQQ-UHFFFAOYSA-N 0.000 claims description 4
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- KGBXLFKZBHKPEV-UHFFFAOYSA-N boric acid Chemical compound OB(O)O KGBXLFKZBHKPEV-UHFFFAOYSA-N 0.000 claims description 3
- 239000004327 boric acid Substances 0.000 claims description 3
- -1 boron halide Chemical class 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- 238000005507 spraying Methods 0.000 claims description 3
- 229920000642 polymer Polymers 0.000 claims description 2
- 125000001626 borono group Chemical group [H]OB([*])O[H] 0.000 claims 1
- 238000009792 diffusion process Methods 0.000 abstract description 13
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 11
- 239000001257 hydrogen Substances 0.000 abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 11
- 238000002161 passivation Methods 0.000 abstract description 8
- 230000007547 defect Effects 0.000 abstract description 7
- 230000008021 deposition Effects 0.000 abstract description 3
- 238000001727 in vivo Methods 0.000 abstract description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 description 5
- 230000000052 comparative effect Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 3
- 229910052698 phosphorus Inorganic materials 0.000 description 3
- 239000011574 phosphorus Substances 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004140 cleaning Methods 0.000 description 2
- 238000005034 decoration Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000005498 polishing Methods 0.000 description 2
- 238000005245 sintering Methods 0.000 description 2
- XGCTUKUCGUNZDN-UHFFFAOYSA-N [B].O=O Chemical compound [B].O=O XGCTUKUCGUNZDN-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000009835 boiling Methods 0.000 description 1
- BRTALTYTFFNPAC-UHFFFAOYSA-N boroxin Chemical compound B1OBOBO1 BRTALTYTFFNPAC-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 230000000149 penetrating effect Effects 0.000 description 1
- 230000002035 prolonged effect Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2252—Diffusion into or out of group IV semiconductors using predeposition of impurities into the semiconductor surface, e.g. from a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/225—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a solid phase, e.g. a doped oxide layer
- H01L21/2251—Diffusion into or out of group IV semiconductors
- H01L21/2254—Diffusion into or out of group IV semiconductors from or through or into an applied layer, e.g. photoresist, nitrides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
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- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a boron doping method of a solar cell, which comprises the steps of depositing boron slurry, doping by laser and carrying out heat treatment; after boron slurry is deposited on the surface of the silicon wafer, heat treatment is carried out firstly, and then laser doping is carried out. According to the invention, heat treatment is carried out at a certain temperature and time between the deposition of boron slurry and laser doping, so that on one hand, effective preliminary hydrogen passivation is carried out on the surface and in-vivo defects of the silicon wafer through the heat treatment, on the other hand, preliminary diffusion is obtained after the heat treatment of the boron slurry, and secondary doping is carried out through the laser, and the effective passivation of the cell piece and the effective doping of boron elements can be achieved.
Description
Technical Field
The invention relates to the field of photovoltaics, in particular to a boron doping method for a solar cell.
Background
With the increasing conflict between the limited reserves of traditional energy and the irreconcilable increase in human demand for energy, solar cells have the following advantages as renewable energy sources: 1. the most abundant energy available to humans; 2. the application is wide, and the places where the sunlight arrives can be utilized; 3. the solar energy belongs to a very clean energy source, does not generate noise and atmospheric pollution in application, has almost zero influence on the ecological environment and the like.
In the prior art, the crystalline silicon solar cell is widely applied due to the advantages of relatively simple manufacturing technology, low cost and the like, and the industrial and automatic production is relatively mature and stable. The diffusion junction is the core technology of crystalline silicon solar cells, and boron diffusion doping is the key point for realizing high conversion efficiency in the solar cells, and the difficulty is boron oxide (B)2O3) The boiling point was 1860 ℃. Conventional boron diffusion doping methods include gas phase diffusion and solid state source diffusionA method; both of the above methods are boron diffusion methods capable of forming high quality junctions, have low emitter or back field saturation current densities, and are capable of maintaining high useful lifetimes. But because of the boron diffusion characteristic, a certain high temperature, such as 900-1000 ℃, needs to be kept in a certain period of time to ensure effective diffusion. The long-time high temperature can cause the minority carrier lifetime of the silicon substrate material to be greatly reduced, and finally the conversion efficiency of the photovoltaic device is influenced.
The boron-containing compound is combined with a laser doping technology to effectively avoid the influence of high temperature on the crystalline silicon, the technology utilizes instantaneous heat energy generated by laser acting on the surface of the crystalline silicon to heat the silicon wafer to a molten state, and boron element is doped into the crystalline silicon at the same time, so that after a laser spot is moved away from a molten area, the purposes of rapidly cooling and crystallizing are achieved, and the purpose of effectively doping boron to form a P + layer is achieved. However, the diffusion difficulty of boron is much higher than that of phosphorus, and in order to achieve an ideal boron doping effect, the requirement on laser used for doping is high, a high-power high-frequency laser is usually selected, the requirement on the required laser is high, the technical control requirement is strict, and the cost is high.
Disclosure of Invention
In order to solve the defects of the prior art, the invention provides a boron doping method of a solar cell, which comprises the steps of depositing boron slurry, doping by laser and carrying out heat treatment; after boron slurry is deposited on the surface of the silicon wafer, heat treatment is carried out firstly, and then laser doping is carried out.
Preferably, the boron doping method of the solar cell further comprises the steps of depositing a SiN film layer by PECVD; firstly, a SiN film layer is deposited on the surface of a silicon wafer through PECVD, and then boron slurry is deposited on the SiN film layer.
Preferably, the heat treatment is carried out in a chain furnace or a tube furnace.
Preferably, the temperature of the heat treatment is 300-700 ℃.
Preferably, the time of the heat treatment is 1-240 min.
Preferably, nitrogen and/or oxygen are introduced during the heat treatment, the flow rate of the nitrogen is not more than 20L/min, and the flow rate of the oxygen is not more than 10L/min.
Preferably, the boron paste is deposited by printing, spin coating or spraying.
Preferably, the boron source in the boron slurry is a borosilicate alloy, boron oxide, boric acid, boroxine or a boron halide.
Preferably, the laser power of the laser doping is 20-100W, and the laser frequency is 50-800 KHz.
The invention has the advantages and beneficial effects that:
according to the invention, heat treatment is carried out at a certain temperature and time between the deposition of boron slurry and laser doping, so that on one hand, effective preliminary hydrogen passivation is carried out on the surface and in-vivo defects of the silicon wafer through the heat treatment, on the other hand, preliminary diffusion is obtained after the heat treatment of the boron slurry, and secondary doping is carried out through the laser, and the effective passivation of the cell piece and the effective doping of boron elements can be achieved.
The boron slurry is deposited on the SiN film layer, and because the SiN deposited by PECVD contains more than 20% of hydrogen, atomic hydrogen can passivate dangling bonds and in-vivo defects on the surface of the silicon, so that the recombination rate of current carriers is reduced, and the minority carrier lifetime of the material is prolonged. The passivation of hydrogen in PECVDSiN to the solar cell is realized by a two-step process, firstly, when PECVD SiN is deposited on the silicon surface, a hydrogen-rich layer is formed on the silicon surface, the hydrogen plays a role in passivating the silicon surface, and secondly, the subsequent heat treatment can further diffuse the hydrogen on the silicon surface into the device to realize the passivation of the bulk defect.
According to the invention, the boron slurry is effectively attached to the surface of the silicon wafer through low-temperature heat treatment, and laser diffusion and low-density defects penetrating through a passivation layer can be simultaneously realized by combining a laser doping process; the heat treatment in a certain temperature range plays a role in hydrogen passivation on the SiN deposited by the PECVD, and along with the heat treatment process, part of hydrogen on the silicon surface is diffused into a silicon body, and part of the hydrogen is dissipated into the environment; and the proper heat treatment temperature and time are favorable for partial hydrogen to be diffused into the silicon body in one step so as to ensure that the dangling bonds and the body defects on the surface of the silicon are passivated better in the subsequent treatment of the battery.
Detailed Description
The following further describes embodiments of the present invention with reference to examples. The following examples are only for illustrating the technical solutions of the present invention more clearly, and the protection scope of the present invention is not limited thereby.
The invention provides a boron doping method of a solar cell, which comprises the steps of firstly depositing a SiN film layer on the surface of a silicon wafer by PECVD (plasma enhanced chemical vapor deposition), then depositing boron slurry on the SiN film layer, then carrying out heat treatment on the boron slurry, and then carrying out laser doping;
the boron slurry deposition adopts printing, spin coating or spray coating; the boron source in the boron slurry is borosilicate alloy, boron oxide, boric acid, boron-oxygen polymer or boron halide;
the heat treatment is carried out in a chain furnace or a tube furnace; the heat treatment temperature is 300-700 ℃, and the heat treatment time is 1-240 min; nitrogen and oxygen can be introduced in the heat treatment process, the flow rate of the nitrogen is 0-20L/min, and the flow rate of the oxygen is 0-10L/min;
the laser power of the laser doping is 20-100W, the laser frequency is 50-800 KHz, and the laser spot size is 20-200 mu m; the laser patterns used comprise three types of line patterns, point patterns and line segment patterns, and the line spacing is 0-2 mm; the doping concentration of boron element in the boron doping area is more than or equal to 1.0E +19atoms/cm3The doping depth is 0.5 to 5 μm.
The specific embodiment of the invention is as follows:
example 1
The production process of the P-PERC battery comprises the following steps: making velvet by using a P-type sheet; diffusion of phosphorus; removing PSG on the back; fourthly, polishing the back surface; printing boron paste on the back; sixthly, heat treatment; seventhly, laser boron doping is carried out on the back surface; eighthly, cleaning; ninthly, passivating; c, printing and sintering the red (R);
⑤, printing boron paste as whole surface, ⑥, carrying out heat treatment in a tube furnace at 580 deg.C under 10L/min of nitrogen for 40min, ⑦, doping boron with laser at a linear pattern with a linear spacing of 1.302mm, a laser power of 40W, a laser frequency of 100KHz, a boron doping depth of 2.8 μm, and a doping concentration (surface concentration) of 2.5E +19atoms/cm3And the laser spot width is 120 mu m.
Comparative example 1
On the basis of example 1, the difference is only that the heat treatment step is omitted, and other process steps and process conditions are not changed.
The cell sheet obtained in example 1 is compared with the cell sheet obtained in comparative example 1, and the cell sheet obtained in example 1 has the following advantages: uoc increased 3.7mV, Isc decreased 25mA, FF increased 0.26%, and Eta increased 0.13%.
Example 2
The production process of the P-PERC battery comprises the following steps: making velvet by using a P-type sheet; diffusion of phosphorus; removing PSG on the back; fourthly, polishing the back surface and removing PSG on the front surface; passivating; sixthly, printing boron paste on the back; seventhly, heat treatment; laser boron doping on the back; ninthly, cleaning; c, printing and sintering the red (R);
⑥, printing boron paste as local printing, ⑦, carrying out heat treatment in a chain furnace at 400 deg.C under nitrogen flow of 5L/min for 20min, ⑧, using line segment pattern as laser doping pattern with line interval of 1.42mm, laser power of 55W, laser frequency of 250KHz, boron doping depth of 4.05 μm, and doping concentration (surface concentration) of 6.8E +19atoms/cm3The laser spot width was 35 μm.
Comparative example 2
On the basis of example 2, the difference is only that the heat treatment step is omitted, and other process steps and process conditions are not changed.
The cell sheet obtained in example 2 is compared with the cell sheet obtained in comparative example 2, and the cell sheet obtained in example 2 has the following advantages: the Uoc is increased by 2.7mV, the Isc is increased by 33mA, the FF is increased by 0.23 percent, and the Eta is increased by 0.22 percent.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, various modifications and decorations can be made without departing from the technical principle of the present invention, and these modifications and decorations should also be regarded as the protection scope of the present invention.
Claims (9)
1. The boron doping method of the solar cell comprises the steps of depositing boron slurry and laser doping, and is characterized by further comprising heat treatment; after boron slurry is deposited on the surface of the silicon wafer, heat treatment is carried out firstly, and then laser doping is carried out.
2. The boron doping method of a solar cell according to claim 1, further comprising PECVD depositing a SiN film layer; firstly, a SiN film layer is deposited on the surface of a silicon wafer through PECVD, and then boron slurry is deposited on the SiN film layer.
3. The boron doping method of a solar cell according to claim 2, characterized in that the heat treatment is carried out in a chain furnace or a tube furnace.
4. The boron doping method for solar cells according to claim 3, wherein the temperature of the heat treatment is 300-700 ℃.
5. The boron doping method for solar cells according to claim 4, wherein the time of the heat treatment is 1-240 min.
6. The boron doping method for the solar cell according to claim 5, wherein nitrogen and/or oxygen are introduced during the heat treatment, the flow rate of the nitrogen is not more than 20L/min, and the flow rate of the oxygen is not more than 10L/min.
7. The boron doping method of the solar cell according to claim 6, wherein the boron paste is deposited by printing, spin coating or spray coating.
8. The boron doping method of a solar cell according to claim 7, wherein the boron source in the boron paste is a borosilicate alloy, boron oxide, boric acid, borono polymer, or boron halide.
9. The boron doping method for solar cells according to claim 8, wherein the laser power of the laser doping is 20-100W, and the laser frequency is 50-800 KHz.
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| CN202010667296.8A CN111785615A (en) | 2020-07-13 | 2020-07-13 | Boron doping method of solar cell |
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| Application Number | Priority Date | Filing Date | Title |
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| CN202010667296.8A CN111785615A (en) | 2020-07-13 | 2020-07-13 | Boron doping method of solar cell |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007038164A2 (en) * | 2005-09-23 | 2007-04-05 | Nanosys, Inc. | Methods for nanostructure doping |
| CN104638033A (en) * | 2015-02-11 | 2015-05-20 | 苏州金瑞晨科技有限公司 | Nano silicon boron slurry and method for preparing PERL solar battery by utilizing nano silicon boron slurry |
| CN104752562A (en) * | 2015-03-17 | 2015-07-01 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of local boron back surface passive field solar cell |
| CN106229360A (en) * | 2016-08-02 | 2016-12-14 | 苏州金瑞晨科技有限公司 | A kind of double-side efficient solaode and preparation method thereof |
| US20170365734A1 (en) * | 2014-12-30 | 2017-12-21 | Merck Patent Gmbh | Laser doping of semiconductors |
-
2020
- 2020-07-13 CN CN202010667296.8A patent/CN111785615A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2007038164A2 (en) * | 2005-09-23 | 2007-04-05 | Nanosys, Inc. | Methods for nanostructure doping |
| US20170365734A1 (en) * | 2014-12-30 | 2017-12-21 | Merck Patent Gmbh | Laser doping of semiconductors |
| CN104638033A (en) * | 2015-02-11 | 2015-05-20 | 苏州金瑞晨科技有限公司 | Nano silicon boron slurry and method for preparing PERL solar battery by utilizing nano silicon boron slurry |
| CN104752562A (en) * | 2015-03-17 | 2015-07-01 | 晶澳（扬州）太阳能科技有限公司 | Preparation method of local boron back surface passive field solar cell |
| CN106229360A (en) * | 2016-08-02 | 2016-12-14 | 苏州金瑞晨科技有限公司 | A kind of double-side efficient solaode and preparation method thereof |
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