JPS57113215A - Vapor phase growing method and device for compound semiconductor crystal - Google Patents

Vapor phase growing method and device for compound semiconductor crystal

Info

Publication number
JPS57113215A
JPS57113215A JP18906880A JP18906880A JPS57113215A JP S57113215 A JPS57113215 A JP S57113215A JP 18906880 A JP18906880 A JP 18906880A JP 18906880 A JP18906880 A JP 18906880A JP S57113215 A JPS57113215 A JP S57113215A
Authority
JP
Japan
Prior art keywords
pressure
growing
gas
normal
growth
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18906880A
Other languages
Japanese (ja)
Inventor
Akihiro Shibatomi
Masaharu Nogami
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18906880A priority Critical patent/JPS57113215A/en
Publication of JPS57113215A publication Critical patent/JPS57113215A/en
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Abstract

PURPOSE:To enable the formation of grown films of different thickness by varying the reaction gas pressure in response to the thickness of a growing epitaxial layer. CONSTITUTION:Reduced pressure growing, high pressure or normal pressure gas supply lines A1, B2 are provided, reduced pressure growing gas mixture preliminary container 22 and a normal pressure gas mixture preliminary unit 21 are added, and further waste gas redecomposition furnaces 35-37, a filter 38, and rotary pumps 41, 42 are provided at the waste gas part of a reaction tube 43. In case of the thick epitaxial growth, normal or high pressure is provided in the reaction tube, thereby enhancing the crystal growth speed. On the other hand, when a thin eqitaxial layer is grown, the pressure is reduced to decelerate the crystal growing speed. Then, the growth of different thick films are continuously performed.
JP18906880A 1980-12-29 1980-12-29 Vapor phase growing method and device for compound semiconductor crystal Pending JPS57113215A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18906880A JPS57113215A (en) 1980-12-29 1980-12-29 Vapor phase growing method and device for compound semiconductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18906880A JPS57113215A (en) 1980-12-29 1980-12-29 Vapor phase growing method and device for compound semiconductor crystal

Publications (1)

Publication Number Publication Date
JPS57113215A true JPS57113215A (en) 1982-07-14

Family

ID=16234757

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18906880A Pending JPS57113215A (en) 1980-12-29 1980-12-29 Vapor phase growing method and device for compound semiconductor crystal

Country Status (1)

Country Link
JP (1) JPS57113215A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9440511B2 (en) 2010-03-10 2016-09-13 Itw Fastener Products Gmbh Sound deadening baffle for a ventilation valve

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9440511B2 (en) 2010-03-10 2016-09-13 Itw Fastener Products Gmbh Sound deadening baffle for a ventilation valve

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