JPS59162273A - Continuous producing device for thin film - Google Patents
Continuous producing device for thin filmInfo
- Publication number
- JPS59162273A JPS59162273A JP3593083A JP3593083A JPS59162273A JP S59162273 A JPS59162273 A JP S59162273A JP 3593083 A JP3593083 A JP 3593083A JP 3593083 A JP3593083 A JP 3593083A JP S59162273 A JPS59162273 A JP S59162273A
- Authority
- JP
- Japan
- Prior art keywords
- sputtering
- thin film
- pressure
- vessel
- vacuum pump
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
Abstract
Description
【発明の詳細な説明】
本発明は長尺の基体に薄膜を連続的に形成する連続薄膜
製造装置に関し、特に薄膜を形成している最中の排気系
の消費屯カの低減化全目的とする。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a continuous thin film manufacturing apparatus that continuously forms thin films on a long substrate, and in particular, its purpose is to reduce the consumption of exhaust systems during thin film formation. do.
一般に、長尺の基体にス・ぐツタ装置を用いて薄膜を形
成する場合は、長時間にわたりスパッタを行なわなけれ
ばならず、その間スパッタ室は排気し続けなければなら
ない。またスパッタを開始する1でに、ス・モッタ室は
できるだけ早く必要な到達圧力せで排気しておかなけれ
ばならず、ス・ぐ。Generally, when forming a thin film on a long substrate using a sputtering apparatus, sputtering must be performed for a long time, during which time the sputtering chamber must be continuously evacuated. Also, before starting sputtering, the sputtering chamber must be evacuated to the required ultimate pressure as soon as possible.
り室の壁に付着しているガスや基体に付着しているガス
を速やかに排気する必要があることから大容量の排気系
が必要となる。しかるにスパッタを行々っている時には
、アルコゞンガスを一定の圧力に保持する必要があるこ
とから、排気系とス・やツタ室との間に可変オリフィス
等を配して排気速度を制限するのが一般的である。しか
しながら可変オリフィスを用い大容量の排気系を動作さ
せた状態にてス・ぐツタを長時間貸なうことは、排気系
の消貧屯力が大きくなって経済的でないことは明らかで
あり、省エネルギーの点からも奸才しくない。Since it is necessary to quickly exhaust the gas adhering to the walls of the chamber and the gas adhering to the substrate, a large-capacity exhaust system is required. However, when performing sputtering, it is necessary to maintain the alco gas at a constant pressure, so a variable orifice, etc. is placed between the exhaust system and the suction or ivy chamber to limit the exhaust speed. is common. However, it is clear that it is not economical to use a suction pipe for a long time while operating a large-capacity exhaust system using a variable orifice, as the depletion force of the exhaust system becomes large. It is not ingenious from the point of view of energy saving either.
本発明はかかる点に鑑みてなされたものである。The present invention has been made in view of this point.
以下1図面を用いて詳細な説明を行なう。A detailed explanation will be given below using one drawing.
第1図は従来の連続薄膜製造装置の概略図を示す。FIG. 1 shows a schematic diagram of a conventional continuous thin film manufacturing apparatus.
図中、1は真空容器、2は基体7を巻いた送り出しロー
ル、3は薄膜を形成された基体7を巻き取る巻き取りロ
ール、 4 、4’はガイドロール、5はキャン、6は
ターケ゛ットである。真空容器1は。In the figure, 1 is a vacuum container, 2 is a delivery roll that winds up the substrate 7, 3 is a take-up roll that winds up the substrate 7 on which a thin film has been formed, 4 and 4' are guide rolls, 5 is a can, and 6 is a target. be. Vacuum container 1.
スパッタに先立ち、パルプ8および排気速度を調整する
だめの可変オリフィス9を経由して真空ポンプ10によ
り圧力が1O−7Tor’r台まで排気される。Prior to sputtering, a vacuum pump 10 evacuates the pulp to a pressure of about 10-7 Tor'r via the pulp 8 and a variable orifice 9 for adjusting the evacuation speed.
排気工程中には、可変オリフィス9は全開とし。During the exhaust process, the variable orifice 9 is fully opened.
最大の排気速度が得られる状態にしておくのは当然であ
る。次に、可変リークパルプ11を調整し。It goes without saying that conditions should be maintained to obtain the maximum pumping speed. Next, adjust the variable leak pulp 11.
アルコゝンガスボンベ12内のアルゴンガス’jl”
具A容器1内に導入し、真空容器1内のアルゴンガス圧
力を]×10 へ−I X 10 Torrに保持
する。次に、可変オリフィス9を調整し、真空容器1内
のアルコ8ンガス圧力を5×10〜I X 10 T
orrの適当な値に設定し、ターケ゛7ト6に電源(図
示省略)より高周波捷たは直流の電源を供給し、クーケ
゛ット6と真空容器1の内壁との間でグロー放K k行
わしめてターケ゛ット6の原子を飛び出させ。Argon gas 'jl' in the alcon gas cylinder 12
Material A is introduced into the container 1, and the argon gas pressure in the vacuum container 1 is maintained at ]×10 to −I×10 Torr. Next, adjust the variable orifice 9 to adjust the alcohol gas pressure in the vacuum container 1 to 5 x 10 to I x 10 T.
orr to an appropriate value, supply high-frequency switching or DC power to the target 7 6 from a power supply (not shown), perform glow emission between the coupe 6 and the inner wall of the vacuum container 1, and then set the target. Make the atoms of 6 pop out.
キャン5に市って移動している基体7に原子を付着せし
めて基体7の表面に助膜全連続的に形成する。Atoms are attached to the substrate 7 moving in the can 5 to form an auxiliary film completely continuously on the surface of the substrate 7.
かかる連続薄膜製造装置においては、一般に真空容器1
は大きなものが使用され、A空容器の内壁の面積も広く
ガス放出が大きいことと、基体からのガス放出もあり、
ス・ぐツタを開始する前の排気工程を短時間で行うため
には真空、j9ンプ10は大容量のものが必要である。In such a continuous thin film manufacturing apparatus, generally a vacuum vessel 1
A large one is used, and the inner wall area of the empty container A is large, and gas emission is large, and there is also gas emission from the base.
In order to perform the evacuation process in a short time before starting the suction, the vacuum pump 10 needs to have a large capacity.
かかる真空ポンプを用いてス・ぐツタを行なう場合は、
真空容器1内のアルゴンガス圧力を適禍な値にするには
可変オリフィスを調整して排気速度を制限する。この状
態て長尺の基体に74す膜を連続的に形成する場合には
。When performing suction using such a vacuum pump,
In order to maintain the argon gas pressure within the vacuum vessel 1 at an appropriate value, the exhaust speed is limited by adjusting the variable orifice. In this state, when 74 films are continuously formed on a long substrate.
スパッタ時間が長時間(lζ及ぶた′め7其空ボア)0
10の消費式力は大きくなり、製品コストの上昇。Sputtering time is long (7 holes due to long sputtering time) 0
10 consumption formula power increases, product cost increases.
また近年の省エイ・ルギーの動向に反することになる。It would also go against the recent trends in energy conservation.
不発明はかかる点に鑑みてなさノtたものである。The invention was not made in view of this point.
第2図に本発明の連続薄膜製造装置の5概略図を示した
。FIG. 2 shows five schematic diagrams of the continuous thin film manufacturing apparatus of the present invention.
第2図中、第1図と同一番号のものは同一物か同一機能
を有することは当然である。第2図の連続薄膜製造装置
においては、大容量の真空ポンプ10により真空容器1
内のガス全充分に排気した後、アルコ゛ンガス導入用可
変リークパルプ11にてアルゴンガスを真空容器1内に
圧力1×10〜I X 10 Torrまで導入し、
しかる後パルプ8を閉じて大容量真空ポンプ10に供給
している¥E力を遮断する。引き続きあらかじめ起動さ
せておいた小容量真空ポンプ14と真空容器1との間の
パルプ13を開いて排気を行なうことにより、真空容器
1内のアルコゝンがスはスバ、りに適当な圧力に保持さ
れ、しかも真空ポンプ014は小容量で良いため消費電
力も少なくて済む。It goes without saying that in FIG. 2, parts with the same numbers as in FIG. 1 are the same items or have the same functions. In the continuous thin film manufacturing apparatus shown in FIG. 2, a vacuum vessel 1 is
After fully exhausting all the gas inside, argon gas is introduced into the vacuum container 1 using the variable leak pulp 11 for introducing argon gas to a pressure of 1 x 10 to I x 10 Torr,
Thereafter, the pulp 8 is closed and the power supplied to the large capacity vacuum pump 10 is cut off. Subsequently, by opening the pulp 13 between the small-capacity vacuum pump 14 and the vacuum container 1, which had been started in advance, and evacuating, the alcohol gas in the vacuum container 1 is quickly brought to an appropriate pressure. In addition, since the vacuum pump 014 only needs to have a small capacity, power consumption can be reduced.
以上説明したこと全具体的な数値で示すと、1+?Z
”の容積全イイする兵卒容器1内に、基体として50μ
mのノ早さを有するポリエステルフィルムヲ送り出しロ
ール2に100m巻き、連続的に薄膜を形成する場合、
真空ポンプ10に排気速w 6000リットル/分のも
のを使用し、約5時間排気して真空容器1内の圧力を1
0 Torl一台にする。しかル後、バルブ1−1ヲ
開いてアルゴンガスを圧力1O−3Torrまで導入し
、パルプ8を閉じ、・会ノ・ブ13を開いて排気速度6
001Jットル/分の真空ポンプ14により排気し、真
空容器1内のアルゴンガス圧力f 1O−2Torrに
保持してスパッタを行なった。この時100mの基体の
全面に薄膜を形成するのに要した時間が10時間であっ
た。また真空ポンプに油拡散ポンプを使用した場合、真
空ポンプ10の所要電力は約4.1<AI’H、真空ポ
ンプ14の所要電力は600 WHてあり、前記の10
時間のスパッタ時間に対して本発明によれば(4000
−600)X10=34..0001■だけ電力の節約
が出来。If we express everything explained above in concrete numerical values, is it 1+? Z
50μ as a base in a soldier container 1 with a total volume of
When a polyester film having a speed of 100 m is wound around the feed roll 2 to continuously form a thin film,
Use a vacuum pump 10 with an evacuation speed of 6000 liters/min, and evacuate for about 5 hours to reduce the pressure inside the vacuum container 1 to 1.
0 Set to one Torl. After that, open the valve 1-1 to introduce argon gas to a pressure of 10-3 Torr, close the pulp 8, open the valve 13, and increase the exhaust speed to 6.
The vacuum chamber 1 was evacuated by a vacuum pump 14 at a rate of 0.001 J Torr/min, and the argon gas pressure in the vacuum chamber 1 was maintained at f1O-2 Torr to perform sputtering. At this time, it took 10 hours to form a thin film on the entire surface of the 100 m long substrate. Furthermore, when an oil diffusion pump is used as the vacuum pump, the power required for the vacuum pump 10 is approximately 4.1<AI'H, the power required for the vacuum pump 14 is 600 WH, and the power required for the vacuum pump 14 is approximately 4.1<AI'H.
According to the invention for a sputtering time of hours (4000
-600)X10=34. .. You can save electricity by 0001■.
しかも作成した薄膜の特性は何ら劣化(は見られなかっ
た。なおスパックの前に真空ポンプ10.真空ポンプ0
14とにより並行して排気を行々い、真空容器1内の圧
力が所定値に達したら真空ポンプ10による排気を止め
て弁8も閉止し、以後ス・ぐツタを行々っている間、真
空ポンプ14による排気を行なうようにすれば、スバ、
りの前の排気時間を短縮できること(は言う寸でもない
。Moreover, no deterioration was observed in the properties of the thin film created.Before spucking, vacuum pump 10 and vacuum pump 0 were used.
14, and when the pressure inside the vacuum container 1 reaches a predetermined value, the evacuation by the vacuum pump 10 is stopped and the valve 8 is also closed. , If the vacuum pump 14 is used for evacuation, Suba,
It is possible to shorten the evacuation time before refueling.
以上の如く本発明によれば、電力消費が少々く。As described above, according to the present invention, power consumption is slightly reduced.
製品コストの低減に役立つことがわかる。更にスパッタ
室全複数個有するような大型の連続薄膜製造装置におい
ては、その効果は著しいものがあり。It can be seen that this is useful for reducing product costs. Furthermore, in a large continuous thin film manufacturing apparatus having a plurality of sputtering chambers, the effect is remarkable.
その工業的価値は絶大である。Its industrial value is enormous.
以上1本発明を一実施例を用いて説明したが。The present invention has been described above using one embodiment.
本発明の趣旨(dこれに限定されるものではなく。The gist of the present invention (d) is not limited thereto.
真空容器の変形、基体送り機構の種々の変更が考えられ
ることは当然である。Naturally, various modifications of the vacuum container and the substrate feeding mechanism can be considered.
第1図は従来の連続薄膜製造装置の械略図、第2図は本
発明の連続薄膜製造装置の一実施例の概略図。
図中、1:真空容器、2.送シ出しロール、3:巻き取
りロール、 4 、4’ ニガイドロール、5゜キャン
、6:ターケゝノド、7二基体、8.13:バルブ、9
:可変オリフィス、 10 、14 :真空ポンプ、1
1 可変リークパルプ、12゛アルゴンガスボンベ。FIG. 1 is a mechanical diagram of a conventional continuous thin film manufacturing apparatus, and FIG. 2 is a schematic diagram of an embodiment of the continuous thin film manufacturing apparatus of the present invention. In the figure, 1: vacuum container, 2. Feed roll, 3: Take-up roll, 4, 4' Ni guide roll, 5° can, 6: Turquoise throat, 7 Two bases, 8.13: Valve, 9
: variable orifice, 10, 14 : vacuum pump, 1
1. Variable leak pulp, 12゛ argon gas cylinder.
Claims (1)
において、大容量の第1の排気系と小−容量の第2の排
気系とを備え、スパッタを行なう前に少なくとも上記第
1の排気系による排気を行ない、所定圧力まで排気した
ら上記第1の排気系の弁を閉じるとともに該第1の排気
系を止め、引き続き上記第2の排気系による排気を行々
いつつスパッタを行なうようにしたことを特徴とする連
続薄膜製造装置。1) A sputtering apparatus for completely continuously forming thin films on a long substrate, which is equipped with a large-capacity first exhaust system and a small-capacity second exhaust system, and is equipped with at least the above-mentioned first exhaust system before sputtering. Exhaust is performed by the exhaust system, and when the exhaust reaches a predetermined pressure, the valve of the first exhaust system is closed and the first exhaust system is stopped, and sputtering is performed while continuing exhaust through the second exhaust system. A continuous thin film manufacturing device characterized by:
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3593083A JPS59162273A (en) | 1983-03-07 | 1983-03-07 | Continuous producing device for thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP3593083A JPS59162273A (en) | 1983-03-07 | 1983-03-07 | Continuous producing device for thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS59162273A true JPS59162273A (en) | 1984-09-13 |
Family
ID=12455745
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP3593083A Pending JPS59162273A (en) | 1983-03-07 | 1983-03-07 | Continuous producing device for thin film |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS59162273A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4004116A1 (en) * | 1990-02-10 | 1991-08-14 | Leybold Ag | DEVICE FOR COATING A PLASTIC SUBSTRATE, PREFERABLY A POLYMETHYLMETHACRYLATE SUBSTRATE, WITH METALS |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55119171A (en) * | 1979-03-07 | 1980-09-12 | Matsushita Electric Ind Co Ltd | Spattering apparatus |
JPS5924760B2 (en) * | 1979-04-12 | 1984-06-12 | 富士通株式会社 | Vapor phase growth method of magnesia spinel |
-
1983
- 1983-03-07 JP JP3593083A patent/JPS59162273A/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS55119171A (en) * | 1979-03-07 | 1980-09-12 | Matsushita Electric Ind Co Ltd | Spattering apparatus |
JPS5924760B2 (en) * | 1979-04-12 | 1984-06-12 | 富士通株式会社 | Vapor phase growth method of magnesia spinel |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4004116A1 (en) * | 1990-02-10 | 1991-08-14 | Leybold Ag | DEVICE FOR COATING A PLASTIC SUBSTRATE, PREFERABLY A POLYMETHYLMETHACRYLATE SUBSTRATE, WITH METALS |
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