JPS51136581A - Process for production of a semi-conductor crystal - Google Patents

Process for production of a semi-conductor crystal

Info

Publication number
JPS51136581A
JPS51136581A JP5975775A JP5975775A JPS51136581A JP S51136581 A JPS51136581 A JP S51136581A JP 5975775 A JP5975775 A JP 5975775A JP 5975775 A JP5975775 A JP 5975775A JP S51136581 A JPS51136581 A JP S51136581A
Authority
JP
Japan
Prior art keywords
semi
production
conductor crystal
slit
conductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP5975775A
Other languages
Japanese (ja)
Inventor
Satoyoshi Kuroda
Koji Kozuka
Seiichi Isomae
Masatoshi Matsuda
Michiyoshi Maki
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP5975775A priority Critical patent/JPS51136581A/en
Publication of JPS51136581A publication Critical patent/JPS51136581A/en
Pending legal-status Critical Current

Links

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

PURPOSE: A semi-conductor cryatal is made in a strip form by alternately installing a heater and a thermocouple at the ends of slit which are the most important place for crystal growth, thereby making the temperatures at the slit ends uniform and keeping the temperature differences of molten liquid in the slits below 1°C.
COPYRIGHT: (C)1976,JPO&Japio
JP5975775A 1975-05-21 1975-05-21 Process for production of a semi-conductor crystal Pending JPS51136581A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5975775A JPS51136581A (en) 1975-05-21 1975-05-21 Process for production of a semi-conductor crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5975775A JPS51136581A (en) 1975-05-21 1975-05-21 Process for production of a semi-conductor crystal

Publications (1)

Publication Number Publication Date
JPS51136581A true JPS51136581A (en) 1976-11-26

Family

ID=13122440

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5975775A Pending JPS51136581A (en) 1975-05-21 1975-05-21 Process for production of a semi-conductor crystal

Country Status (1)

Country Link
JP (1) JPS51136581A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007532458A (en) * 2004-04-08 2007-11-15 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Single crystal and manufacturing method thereof
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007532458A (en) * 2004-04-08 2007-11-15 サン−ゴバン セラミックス アンド プラスティクス，インコーポレイティド Single crystal and manufacturing method thereof
JP2010229030A (en) * 2004-04-08 2010-10-14 Saint-Gobain Ceramics & Plastics Inc Single crystal and method for fabricating same
US8157913B2 (en) 2004-04-08 2012-04-17 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a sapphire single crystal
USRE43469E1 (en) 2004-04-08 2012-06-12 Saint-Gobain Ceramics & Plastics, Inc. Single crystals and methods for fabricating same
US8685161B2 (en) 2004-04-08 2014-04-01 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a sapphire crystal using a melt fixture including thermal shields having a stepped configuration
US9926645B2 (en) 2004-04-08 2018-03-27 Saint-Gobain Ceramics & Plastics, Inc. Method of forming a single crystal sheet using a die having a thermal gradient along its length
US9963800B2 (en) 2004-04-08 2018-05-08 Saint-Gobain Ceramics & Plastics, Inc. Method of making a sapphire component including machining a sapphire single crystal
US11047650B2 (en) 2017-09-29 2021-06-29 Saint-Gobain Ceramics & Plastics, Inc. Transparent composite having a laminated structure

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