KR950032724A - Manganese-Zinc Ferrite Single Crystal Growth Device - Google Patents

Manganese-Zinc Ferrite Single Crystal Growth Device Download PDF

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Publication number
KR950032724A
KR950032724A KR1019940012183A KR19940012183A KR950032724A KR 950032724 A KR950032724 A KR 950032724A KR 1019940012183 A KR1019940012183 A KR 1019940012183A KR 19940012183 A KR19940012183 A KR 19940012183A KR 950032724 A KR950032724 A KR 950032724A
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KR
South Korea
Prior art keywords
crucible
single crystal
ferrite
platinum
crystal growth
Prior art date
Application number
KR1019940012183A
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Korean (ko)
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KR970006854B1 (en
Inventor
마재용
이병우
임병묵
Original Assignee
이형도
삼성전기 주식회사
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Publication date
Application filed by 이형도, 삼성전기 주식회사 filed Critical 이형도
Priority to KR1019940012183A priority Critical patent/KR970006854B1/en
Publication of KR950032724A publication Critical patent/KR950032724A/en
Application granted granted Critical
Publication of KR970006854B1 publication Critical patent/KR970006854B1/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/04—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt
    • C30B11/08—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method adding crystallising materials or reactants forming it in situ to the melt every component of the crystal composition being added during the crystallisation
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/002—Crucibles or containers for supporting the melt
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/003—Heating or cooling of the melt or the crystallised material
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
    • C30B11/007—Mechanisms for moving either the charge or the heater
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

본 발명은 액상의 잔류 백금성분이 혼입되지 않고 백금타깃에 증착되도록 한 망간-아연 페라이트 단결정 성장장치에 관한 것이다.The present invention relates to a manganese-zinc ferrite single crystal growth apparatus in which a liquid residual platinum component is deposited on a platinum target without being mixed.

종래의 페라이트 단결정 성장장치가 주도가니 하부에 종결정과 페라이트 초기원료를 장입하여 주발열부 부위에 위치시켜 가열 용융시킨 후, 상기 용융된 페라이트룰 고화시키기 위하여 주도가니를 하강시켜 주발열부의 온도구배에 의한 결정을 육성하고, 보조도가니를 이용 페라이트 추가원료를 투입하여 용융시킨 페라이트 액젖이 하측의 보조튜브를 통해 주도가니의 액상으로 직접 낙하 유입되는 과정을 통해 단결정 성장을 진행시켰으나, 이는 주도가니 및 보조도가니의 백금 또는 백금-라듐 성분이 용융 페라이트 액젖과 화학반응하여 주도가니의 액상부에 잔류되어 고화되면서 단결정 성장에 혼입되므로, 순수한 단결정을 이루지 못하고 결정 내에 균열 및 편석을 일으키는 문제점이 있었다.In the conventional ferrite single crystal growth apparatus, seed crystals and ferrite initial raw materials are charged in the lower part of the main crucible, placed in the main heat generating part, and then heated and melted. Then, the main crucible is lowered to solidify the molten ferrite rule to a temperature gradient of the main heating part. Single crystal growth was carried out by directly falling into the liquid phase of the main crucible through the auxiliary tube on the lower side of the ferrite liquid milk which was melted by adding additional ferrite raw material using an auxiliary crucible. Platinum or platinum-radium components of the crucible are mixed with the molten ferrite liquid milk and remain in the liquid portion of the main crucible to be mixed into single crystal growth, thereby not forming pure single crystals and causing cracks and segregation in the crystals.

그러나 본 발명은 보조도가니 하부구조에 타킷지지부로 연결된 백금타킷을 제작 적용함으로써, 액젖이 액상 내에 안정적으로 유입되어 잔류 백금성분이 액상에 잠수된 백금타킷에 증착되므로 단결정에 액상의 잔류 백금성분이 혼입되는 것을 방지할 수 있는 효과가 있다.However, the present invention is produced by applying a platinum target connected to the target support portion to the auxiliary crucible substructure, the liquid milk is stably introduced into the liquid phase, and the remaining platinum component is deposited on the platinum target submerged in the liquid phase, so that the liquid residual platinum component is mixed in the single crystal. There is an effect that can be prevented.

Description

망간-아연 페라이트 단결정 성장장치Manganese-Zinc Ferrite Single Crystal Growth Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 종래의 페라이트 단결정 성장장치의 구조도, 제2도는 본 발명 페라이트 단결정 성장장치의 구조도, 제3도는 제2도의 A부분 확대도.1 is a structural diagram of a conventional ferrite single crystal growth apparatus, FIG. 2 is a structural diagram of a ferrite single crystal growth apparatus of the present invention, and FIG. 3 is an enlarged view of portion A of FIG.

Claims (1)

주도가니(10)와 보조도가니(20)에 페라이트 원료를 장입하여 주발열부(30)와 부발열부(40) 내를 상하방향으로 이동시켜 일정온도로 용융되게 한 후 서냉 고화처리하여 페라이트 단결정 성장장치에 있어서, 상기 보조도가니(20)의 하부 구조가 보조튜브(24) 하단부에 상측으로 타킷지지부(52)가 설치된 백금 타킷(50)이 연결되어 주도가니(10)의 액상(18) 상부에 잠수되는 것을 특징으로 하는 망간-아연 페라이트 단결정 성장장치.Ferrite raw material is charged into the main crucible 10 and the auxiliary crucible 20 to move the inside of the main heat generating unit 30 and the sub heat generating unit 40 in the up and down direction to be melted at a predetermined temperature, followed by slow cooling and solidification. In the lower structure of the auxiliary crucible 20, the platinum target 50 having the target support portion 52 installed thereon is connected to the lower end of the auxiliary tube 24 so as to dive in the upper portion of the liquid phase 18 of the main crucible 10. Manganese-zinc ferrite single crystal growth apparatus, characterized in that. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019940012183A 1994-05-31 1994-05-31 Apparatus for growing mn-zn ferrite single crystal KR970006854B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019940012183A KR970006854B1 (en) 1994-05-31 1994-05-31 Apparatus for growing mn-zn ferrite single crystal

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019940012183A KR970006854B1 (en) 1994-05-31 1994-05-31 Apparatus for growing mn-zn ferrite single crystal

Publications (2)

Publication Number Publication Date
KR950032724A true KR950032724A (en) 1995-12-22
KR970006854B1 KR970006854B1 (en) 1997-04-30

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KR1019940012183A KR970006854B1 (en) 1994-05-31 1994-05-31 Apparatus for growing mn-zn ferrite single crystal

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