JPS55132034A - Manufacture of semiconductor thin film - Google Patents

Manufacture of semiconductor thin film

Info

Publication number
JPS55132034A
JPS55132034A JP3772979A JP3772979A JPS55132034A JP S55132034 A JPS55132034 A JP S55132034A JP 3772979 A JP3772979 A JP 3772979A JP 3772979 A JP3772979 A JP 3772979A JP S55132034 A JPS55132034 A JP S55132034A
Authority
JP
Japan
Prior art keywords
layer
atom
neutron
impurities
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP3772979A
Other languages
Japanese (ja)
Inventor
Kazuyoshi Asai
Masatomo Fujimoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Telegraph and Telephone Corp
Original Assignee
Nippon Telegraph and Telephone Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp filed Critical Nippon Telegraph and Telephone Corp
Priority to JP3772979A priority Critical patent/JPS55132034A/en
Publication of JPS55132034A publication Critical patent/JPS55132034A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02581—Transition metal or rare earth elements

Landscapes

  • Engineering & Computer Science (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

PURPOSE:To obtain an active layer containing uniform impurities by a method wherein a layer containing impurities having an absorption sectional area large enough to cover a neutron is formed on a semiinsulating or high resistant semiconductor substrate, and after growing an epitaxial layer thereon, the neutron is irradiated thereto. CONSTITUTION:A neutron absorption layer 2 containing impurities having a large neutron absorption area like B, Cd, Rh, Gd, Au, etc. at high density is formed on a semiinsulating or high resistant substrate 1 like Si, GaAs, InP, etc. For formation of the layer 2, any ion implantation process, heat diffusion process epitaxial growth process is acceptable, and if the substrate 1 is GaAs, B, Cd are preferable for the impurities but if the substrate 1 is Si, B is preferable. After that, an epitaxial layer 3 is grown on the layer, neutron is irradiated thereto to produce a nuclear transformation on a constituent atom of the layer 3, thus transforming Si atom to P atom and Ga atom to Ge atom. The layer 2 is thus made to be an active layer containing uniform n-type impurities.
JP3772979A 1979-03-31 1979-03-31 Manufacture of semiconductor thin film Pending JPS55132034A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP3772979A JPS55132034A (en) 1979-03-31 1979-03-31 Manufacture of semiconductor thin film

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP3772979A JPS55132034A (en) 1979-03-31 1979-03-31 Manufacture of semiconductor thin film

Publications (1)

Publication Number Publication Date
JPS55132034A true JPS55132034A (en) 1980-10-14

Family

ID=12505574

Family Applications (1)

Application Number Title Priority Date Filing Date
JP3772979A Pending JPS55132034A (en) 1979-03-31 1979-03-31 Manufacture of semiconductor thin film

Country Status (1)

Country Link
JP (1) JPS55132034A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555811A1 (en) * 1983-11-30 1985-05-31 Radiotechnique Compelec METHOD FOR PRODUCING LIGHT-EMITTING DIODES WITH LOW SPECTRAL WIDTH, AND DIODES OBTAINED THEREBY

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2555811A1 (en) * 1983-11-30 1985-05-31 Radiotechnique Compelec METHOD FOR PRODUCING LIGHT-EMITTING DIODES WITH LOW SPECTRAL WIDTH, AND DIODES OBTAINED THEREBY

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