JPS5780783A - Light emitting element and manufacture thereof - Google Patents
Light emitting element and manufacture thereofInfo
- Publication number
- JPS5780783A JPS5780783A JP15670980A JP15670980A JPS5780783A JP S5780783 A JPS5780783 A JP S5780783A JP 15670980 A JP15670980 A JP 15670980A JP 15670980 A JP15670980 A JP 15670980A JP S5780783 A JPS5780783 A JP S5780783A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- crystal wafer
- light emitting
- added
- emitting element
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 239000013078 crystal Substances 0.000 abstract 4
- 239000008188 pellet Substances 0.000 abstract 2
- 239000007791 liquid phase Substances 0.000 abstract 1
- 229910052714 tellurium Inorganic materials 0.000 abstract 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To reduce the complexity of assembly step of a light emitting element by obtaining substantially the same light emitting characteristic under the same manufacturing conditions when employing (111) plane single crystal wafer with (100) plane single crystal wafer and isolating pellets without burr. CONSTITUTION:An n type epitaxially grown layer 12 added with tellurium is grown by a liquid phase epitaxial growth in an n type GaP single crystal wafer 11 having planar orientation of (100) added with S. After a p type epitaxially grown layer 13 added with Zn and O2 is grown, ohmic electrodes 14, 14,... are formed on both sides of p-side and n-side. Thereafter, GaP single crystal wafer 11 is isolated along the planar orientation of (110) by dicing, thereby obtaining LED pellets 15.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15670980A JPS5780783A (en) | 1980-11-07 | 1980-11-07 | Light emitting element and manufacture thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15670980A JPS5780783A (en) | 1980-11-07 | 1980-11-07 | Light emitting element and manufacture thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS5780783A true JPS5780783A (en) | 1982-05-20 |
Family
ID=15633614
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP15670980A Pending JPS5780783A (en) | 1980-11-07 | 1980-11-07 | Light emitting element and manufacture thereof |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5780783A (en) |
-
1980
- 1980-11-07 JP JP15670980A patent/JPS5780783A/en active Pending
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