JPS6442391A - Process for growing crystal using molecular beam - Google Patents
Process for growing crystal using molecular beamInfo
- Publication number
- JPS6442391A JPS6442391A JP19765087A JP19765087A JPS6442391A JP S6442391 A JPS6442391 A JP S6442391A JP 19765087 A JP19765087 A JP 19765087A JP 19765087 A JP19765087 A JP 19765087A JP S6442391 A JPS6442391 A JP S6442391A
- Authority
- JP
- Japan
- Prior art keywords
- molecular beam
- single crystal
- group
- compd
- atom
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To obtain a crystal of compd. semiconductor of the group III-V element contg. scarce impurity and having flat and smooth interface of growth by irradiating a substrate with a first molecular beam of a group III element and a second molecular beam of a group V element, then irradiating formed single crystal with a third molecular beam of a group V element and the second molecular beam. CONSTITUTION:A single crystal 11 of a compd. semiconductor of a group III-V elements is grown by irradiating a substrate 10 consisting of GaAs with a first molecular beam of the first atoms. 12 consisting of Al and Ga, and a second molecular beam of a second atom. 13 consisting of a group V element: As. Then, the single crystal 11 is irradiated with a third molecular beam 14 of the third atom. 15 consisting of a group V element: Sb having smaller chemical bonding force with the first atoms. 12 than the second atom. 13 forming thus a flat crystal surface, then the single crystal is irradiated with the second molecular beam 16 consisting of the second atom. Thus, a flat surface comprising single crystal of a compd. semiconductor of the group III-V elements is obtd. Then, a flat hetero interface 18 contg. scarce impurity is formed by growing a compd. semiconductor single crystal layer 17 of groups III-V elements on the surface of this crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19765087A JPS6442391A (en) | 1987-08-07 | 1987-08-07 | Process for growing crystal using molecular beam |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19765087A JPS6442391A (en) | 1987-08-07 | 1987-08-07 | Process for growing crystal using molecular beam |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6442391A true JPS6442391A (en) | 1989-02-14 |
Family
ID=16378026
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19765087A Pending JPS6442391A (en) | 1987-08-07 | 1987-08-07 | Process for growing crystal using molecular beam |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6442391A (en) |
-
1987
- 1987-08-07 JP JP19765087A patent/JPS6442391A/en active Pending
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