GB8706194D0 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB8706194D0
GB8706194D0 GB878706194A GB8706194A GB8706194D0 GB 8706194 D0 GB8706194 D0 GB 8706194D0 GB 878706194 A GB878706194 A GB 878706194A GB 8706194 A GB8706194 A GB 8706194A GB 8706194 D0 GB8706194 D0 GB 8706194D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
layer
misorienting
grin
fabrication
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB878706194A
Other versions
GB2202371B (en
GB2202371A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sharp Corp
Original Assignee
Sharp Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority to JP60229382A priority Critical patent/JPS6288318A/en
Application filed by Sharp Corp filed Critical Sharp Corp
Priority to GB8706194A priority patent/GB2202371B/en
Priority to DE19873709134 priority patent/DE3709134A1/en
Publication of GB8706194D0 publication Critical patent/GB8706194D0/en
Publication of GB2202371A publication Critical patent/GB2202371A/en
Application granted granted Critical
Publication of GB2202371B publication Critical patent/GB2202371B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02392—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02398—Antimonides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02494—Structure
    • H01L21/02496—Layer structure
    • H01L21/0251—Graded layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02579—P-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Abstract

A semiconductor epitaxial layer is formed by misorienting the planar azimuth of single-crystal substrate by 0.1 to 1 degree from plane (111)B and forming the layer by molecular beam epitaxy. The method is described as applied to the fabrication of a GRIN-SCH semiconductor laser of improved quality.
GB8706194A 1985-10-14 1987-03-16 Semiconductor device Expired GB2202371B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP60229382A JPS6288318A (en) 1985-10-14 1985-10-14 Semiconductor device
GB8706194A GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device
DE19873709134 DE3709134A1 (en) 1985-10-14 1987-03-20 SEMICONDUCTOR COMPONENT

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP60229382A JPS6288318A (en) 1985-10-14 1985-10-14 Semiconductor device
GB8706194A GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device

Publications (3)

Publication Number Publication Date
GB8706194D0 true GB8706194D0 (en) 1987-04-23
GB2202371A GB2202371A (en) 1988-09-21
GB2202371B GB2202371B (en) 1991-03-20

Family

ID=39345493

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8706194A Expired GB2202371B (en) 1985-10-14 1987-03-16 Semiconductor device

Country Status (3)

Country Link
JP (1) JPS6288318A (en)
DE (1) DE3709134A1 (en)
GB (1) GB2202371B (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2708156B2 (en) * 1987-07-27 1998-02-04 シャープ株式会社 Method for manufacturing semiconductor device
JP2750856B2 (en) * 1987-11-12 1998-05-13 シャープ株式会社 Semiconductor device
JP2674043B2 (en) * 1987-12-11 1997-11-05 ソニー株式会社 Epitaxial growth method
JPH039515A (en) * 1989-06-07 1991-01-17 Sharp Corp Semiconductor device
JP3129112B2 (en) * 1994-09-08 2001-01-29 住友電気工業株式会社 Compound semiconductor epitaxial growth method and InP substrate therefor
CN100453690C (en) * 2006-07-21 2009-01-21 哈尔滨工业大学 Molecular beam epitaxy process of growing GaAs-base InSb film
DE102011087628A1 (en) * 2011-12-02 2013-06-06 Bosch Mahle Turbo Systems Gmbh & Co. Kg loader

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3325314A (en) * 1961-10-27 1967-06-13 Siemens Ag Semi-conductor product and method for making same
US3379584A (en) * 1964-09-04 1968-04-23 Texas Instruments Inc Semiconductor wafer with at least one epitaxial layer and methods of making same
US3476592A (en) * 1966-01-14 1969-11-04 Ibm Method for producing improved epitaxial films
GB8518353D0 (en) * 1985-07-20 1985-08-29 Plessey Co Plc Heterostructure device
EP0214610B1 (en) * 1985-09-03 1990-12-05 Daido Tokushuko Kabushiki Kaisha Epitaxial gallium arsenide semiconductor wafer and method of producing the same

Also Published As

Publication number Publication date
JPS6288318A (en) 1987-04-22
GB2202371B (en) 1991-03-20
GB2202371A (en) 1988-09-21
JPH0473610B2 (en) 1992-11-24
DE3709134A1 (en) 1988-09-29

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 20060316