JPS6433097A - Process for growing mixed crystal of iii-v group compound - Google Patents
Process for growing mixed crystal of iii-v group compoundInfo
- Publication number
- JPS6433097A JPS6433097A JP18933087A JP18933087A JPS6433097A JP S6433097 A JPS6433097 A JP S6433097A JP 18933087 A JP18933087 A JP 18933087A JP 18933087 A JP18933087 A JP 18933087A JP S6433097 A JPS6433097 A JP S6433097A
- Authority
- JP
- Japan
- Prior art keywords
- group
- iii
- mixed crystals
- molecular beams
- molecular
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Abstract
PURPOSE:To enable optional control of proportion of mixed crystals of III-V group compds. to be grown by irradiating a substrate pulsatively with molecular beams of element of the group III, and irradiating with molecular beams of each element of the group V individually and successively. CONSTITUTION:A semiconductor layer of mixed crystals of the group III-V compds. contg. >= two kinds of the group V elements is grown by molecular beam epitaxy (MBE) on a substrate 4 by using molecular beam sources 10-13 of each element constituting the mixed crystals of the III-V group compds, and the substrate is irradiated pulsatively with molecular beams of the group III element. At the same time, stages for irradiating successively with molecular beams of each group V element having equal or larger pulse width to or than each pulse is repeated synchronously with the irradiation with the molecular beams 45-47, 50, 51 of the group III element. By this process, in the stage for growing a semiconductor layer of the group III-V mixed crystals contg. >=two kinds of the group V element by the MBE process, the proportion of the mixed crystals can be controlled at high precision (<=0.02 error of the x- value).
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18933087A JPS6433097A (en) | 1987-07-28 | 1987-07-28 | Process for growing mixed crystal of iii-v group compound |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP18933087A JPS6433097A (en) | 1987-07-28 | 1987-07-28 | Process for growing mixed crystal of iii-v group compound |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS6433097A true JPS6433097A (en) | 1989-02-02 |
Family
ID=16239542
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP18933087A Pending JPS6433097A (en) | 1987-07-28 | 1987-07-28 | Process for growing mixed crystal of iii-v group compound |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS6433097A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015053386A (en) * | 2013-09-06 | 2015-03-19 | 旭化成株式会社 | Method for manufacturing compound semiconductor substrate, and compound semiconductor substrate |
-
1987
- 1987-07-28 JP JP18933087A patent/JPS6433097A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2015053386A (en) * | 2013-09-06 | 2015-03-19 | 旭化成株式会社 | Method for manufacturing compound semiconductor substrate, and compound semiconductor substrate |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP0180751A3 (en) | Method of making gallium arsenide thin-film solar cells | |
JPS6415912A (en) | Semiconductor device | |
JPS649613A (en) | Formation of iii-v compound semiconductor | |
DE3635279A1 (en) | GAS PHASE EPITAXIAL METHOD FOR A CONNECTION SEMICONDUCTOR SINGLE CRYSTAL AND DEVICE FOR CARRYING OUT THE METHOD | |
GB2080271B (en) | Molecular beam deposition using gaseous source of group v element | |
EP0253611A3 (en) | Method of epitaxially growing gallium arsenide on silicon | |
MY112348A (en) | Iii-v/ii-vi semiconductor interface fabrication method | |
JPS6433097A (en) | Process for growing mixed crystal of iii-v group compound | |
AU7026391A (en) | Method for forming crystal and crystal article obtained by said method | |
EP0206288A3 (en) | Diffraction grating and process for producing the same | |
JPS57128092A (en) | Imbedded type semiconductor laser device | |
GB2174542B (en) | A method and apparatus for the production of semiconductor devices | |
GB2202371B (en) | Semiconductor device | |
JPS6442391A (en) | Process for growing crystal using molecular beam | |
MY103899A (en) | Allyltellurides and their use in the mocvd growth of group ii-vi epitaxial films. | |
De Boeck et al. | Relief of thermal stress in heteroepitaxial GaAs on Si by mesa release and deposition | |
DE2166427C3 (en) | Process for epitaxial growth of a doped GaAs thin film | |
JPS57106113A (en) | Monitoring method for mixed crystal ratio of multi- element compound semiconductor in molecular beam crystal growing method | |
JPS6477118A (en) | Manufacture of ga1-xalxas epitaxial wafer | |
EP0200237A3 (en) | Process to obtain thin film lines | |
JPS5664489A (en) | Semiconductor laser element | |
JPS6477923A (en) | Wafer | |
JPS6449215A (en) | Epitaxial growth | |
JPS57123897A (en) | Forming method of compound semiconductor crystal | |
JPS57206033A (en) | Method of liquid phase epitaxial growth |