JPS6433097A - Process for growing mixed crystal of iii-v group compound - Google Patents

Process for growing mixed crystal of iii-v group compound

Info

Publication number
JPS6433097A
JPS6433097A JP18933087A JP18933087A JPS6433097A JP S6433097 A JPS6433097 A JP S6433097A JP 18933087 A JP18933087 A JP 18933087A JP 18933087 A JP18933087 A JP 18933087A JP S6433097 A JPS6433097 A JP S6433097A
Authority
JP
Japan
Prior art keywords
group
iii
mixed crystals
molecular beams
molecular
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP18933087A
Other languages
Japanese (ja)
Inventor
Toshio Fujii
Kazuhiro Kondo
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP18933087A priority Critical patent/JPS6433097A/en
Publication of JPS6433097A publication Critical patent/JPS6433097A/en
Pending legal-status Critical Current

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)

Abstract

PURPOSE:To enable optional control of proportion of mixed crystals of III-V group compds. to be grown by irradiating a substrate pulsatively with molecular beams of element of the group III, and irradiating with molecular beams of each element of the group V individually and successively. CONSTITUTION:A semiconductor layer of mixed crystals of the group III-V compds. contg. >= two kinds of the group V elements is grown by molecular beam epitaxy (MBE) on a substrate 4 by using molecular beam sources 10-13 of each element constituting the mixed crystals of the III-V group compds, and the substrate is irradiated pulsatively with molecular beams of the group III element. At the same time, stages for irradiating successively with molecular beams of each group V element having equal or larger pulse width to or than each pulse is repeated synchronously with the irradiation with the molecular beams 45-47, 50, 51 of the group III element. By this process, in the stage for growing a semiconductor layer of the group III-V mixed crystals contg. >=two kinds of the group V element by the MBE process, the proportion of the mixed crystals can be controlled at high precision (<=0.02 error of the x- value).
JP18933087A 1987-07-28 1987-07-28 Process for growing mixed crystal of iii-v group compound Pending JPS6433097A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18933087A JPS6433097A (en) 1987-07-28 1987-07-28 Process for growing mixed crystal of iii-v group compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18933087A JPS6433097A (en) 1987-07-28 1987-07-28 Process for growing mixed crystal of iii-v group compound

Publications (1)

Publication Number Publication Date
JPS6433097A true JPS6433097A (en) 1989-02-02

Family

ID=16239542

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18933087A Pending JPS6433097A (en) 1987-07-28 1987-07-28 Process for growing mixed crystal of iii-v group compound

Country Status (1)

Country Link
JP (1) JPS6433097A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015053386A (en) * 2013-09-06 2015-03-19 旭化成株式会社 Method for manufacturing compound semiconductor substrate, and compound semiconductor substrate

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015053386A (en) * 2013-09-06 2015-03-19 旭化成株式会社 Method for manufacturing compound semiconductor substrate, and compound semiconductor substrate

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