JPS5669877A - Manufacture of luminous element - Google Patents
Manufacture of luminous elementInfo
- Publication number
- JPS5669877A JPS5669877A JP14543179A JP14543179A JPS5669877A JP S5669877 A JPS5669877 A JP S5669877A JP 14543179 A JP14543179 A JP 14543179A JP 14543179 A JP14543179 A JP 14543179A JP S5669877 A JPS5669877 A JP S5669877A
- Authority
- JP
- Japan
- Prior art keywords
- added
- layer
- epitaxial layer
- type
- phase
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000007791 liquid phase Substances 0.000 abstract 3
- 239000007792 gaseous phase Substances 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000010453 quartz Substances 0.000 abstract 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010583 slow cooling Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
- Led Devices (AREA)
Abstract
PURPOSE:To obtain a green LED with high brightness by a method wherein C is used as P type impurities of GaP and C is added from the gaseous phase when a liquid phase grows. CONSTITUTION:An N type GaP wafer 10 is coated with a liquid-phase growing layer 10', the layer 10' is slowly cooled, and a liquid phase is grown. When the layer 10' is slowly cooled up to 970 deg.C in H2, quartz is reduced, and added into Si and Ga, and the first N epitaxial layer is grown. H2 is changed into Ar, NH3 and CH4 are added, the whole is kept at a fixed temperature, and N and C are added into Ga. A P type second epitaxial layer to which N and C are added is further formed by means of slow cooling. Si in Ga is reacted with N and removed at that time. Zn is added from the gaseous phase, and a P type third epitaxial layer is stacked. When the concentration of CH4 is controlled in case of the formation of the second epitaxial layer, an acceptor is easily controlled, and a green LED having high brightness and high efficiency is obtained.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54145431A JPS6019156B2 (en) | 1979-11-12 | 1979-11-12 | Manufacturing method of light emitting device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP54145431A JPS6019156B2 (en) | 1979-11-12 | 1979-11-12 | Manufacturing method of light emitting device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5669877A true JPS5669877A (en) | 1981-06-11 |
| JPS6019156B2 JPS6019156B2 (en) | 1985-05-14 |
Family
ID=15385078
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP54145431A Expired JPS6019156B2 (en) | 1979-11-12 | 1979-11-12 | Manufacturing method of light emitting device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6019156B2 (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101414235B1 (en) * | 2012-06-25 | 2014-07-01 | 주식회사 구마이엔씨 | Reparing method for conduit using changeable reparing device |
-
1979
- 1979-11-12 JP JP54145431A patent/JPS6019156B2/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6019156B2 (en) | 1985-05-14 |
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