JPS6185822A - Liquid epitaxial growth process of sic single crystal - Google Patents
Liquid epitaxial growth process of sic single crystalInfo
- Publication number
- JPS6185822A JPS6185822A JP59208702A JP20870284A JPS6185822A JP S6185822 A JPS6185822 A JP S6185822A JP 59208702 A JP59208702 A JP 59208702A JP 20870284 A JP20870284 A JP 20870284A JP S6185822 A JPS6185822 A JP S6185822A
- Authority
- JP
- Japan
- Prior art keywords
- melt
- single crystal
- substrate
- type
- light emitting
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 23
- 238000000034 method Methods 0.000 title claims abstract description 8
- 239000007788 liquid Substances 0.000 title 1
- 239000000758 substrate Substances 0.000 claims abstract description 17
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 229910002804 graphite Inorganic materials 0.000 claims abstract description 4
- 239000010439 graphite Substances 0.000 claims abstract description 4
- 239000007791 liquid phase Substances 0.000 claims description 6
- 239000012535 impurity Substances 0.000 abstract description 8
- 239000000155 melt Substances 0.000 abstract description 5
- 229910052782 aluminium Inorganic materials 0.000 abstract description 4
- 229910052757 nitrogen Inorganic materials 0.000 abstract description 4
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 19
- 229910010271 silicon carbide Inorganic materials 0.000 description 19
- 239000000463 material Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 238000004020 luminiscence type Methods 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000002362 mulch Substances 0.000 description 1
- 239000002244 precipitate Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000002689 soil Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Recrystallisation Techniques (AREA)
- Led Devices (AREA)
Abstract
Description
【発明の詳細な説明】
（イ）産業上の利用分野
本発明は８ ｉｏ（シリコンカーバイド）単結晶の液相
エピタキシャル成長方法に関する。DETAILED DESCRIPTION OF THE INVENTION (a) Field of Industrial Application The present invention relates to a method for liquid phase epitaxial growth of 8 io (silicon carbide) single crystal.
（ロ）従来の技術
境在ＳｉＣ単結晶は耐壌境性素子材判として研究が進め
られている。まｆｔ−Ｓｉ（３は間接スα移型のＩＶ−
ＩＶ化合物であり、檎々の結晶構造が存在しその禁止帯
幅は２．３９〜３，３３ｅＶまで多岐にわたると共にＰ
−ｎ接合形成が可能なことから赤色から青色まで全ての
可視光を発光可能な発光ダイオード材料として有望視さ
れている。(b) Conventional technology SiC single crystal is being researched as a soil-resistant element material. Maft-Si (3 is indirect su α transfer type IV-
It is a IV compound, and has various crystal structures with a wide range of forbidden band widths from 2.39 to 3,33 eV.
Since it is possible to form -n junctions, it is seen as a promising light-emitting diode material that can emit all visible light from red to blue.
上述した如（Ｓｉｏは種々の結晶構造を有しており、そ
の構造を大別するとα型とβ型とに分けられる。なかで
もα型の６ｎ（ヘキサゴナール）タイプ及びβ型の３（
３（キュービック）タイプは再現性良（成長させること
ができる。As mentioned above, Sio has various crystal structures, and the structures can be roughly divided into α type and β type. Among them, the α type 6n (hexagonal) type and the β type 3 (
Type 3 (cubic) has good reproducibility (can be grown).
例えば、Ｎ（窒素）及びムｌ（アルミニウム）を不純物
として含む６ＨタイプＳｉ０単結晶は青色発光素子材料
に適し、まｆｃＢ（ホウ素）を不純物として含む６Ｈタ
イプＳｉＣ単結晶は赤色発光素子材料に適している（
Ｊ、Ｅｌｅｃｔｒｏｃｈｅｍ。For example, a 6H type Si0 single crystal containing N (nitrogen) and mulch (aluminum) as impurities is suitable for a blue light emitting element material, and a 6H type SiC single crystal containing fcB (boron) as an impurity is suitable for a red light emitting element material. ing(
J, Electrochem.
Ｓａｃ、：８０ＬＩＤ−８’ｌ’ＡＴＥ ８ＣＩＥＮＣ
Ｅ ＡＮＤ ＴＥ（ｉＨＮＯＬＯ（ｊＹ、Ｆｅｂｒｕａ
ｒｙ １９７７、Ｐ２４１〜Ｐ２４６ン。Sac, :80LID-8'l'ATE 8CIENC
E AND TE(iHNOLO(jY, February
ry 1977, P241-P246.
（／ｉ 発明が解決しようとする問題点然るにこのよ
うに青色発光素子材料と赤２Ｓ発元素子材料とで不純物
が異なると、例えば高純度グラフ１イトからなるるりは
中膠こＳｉＣメルトを収納し、基板を斯るメルト中に浸
漬して上記基板上にＳａｃ単結晶を成長せしめる液相エ
ピタキシャル成長方法を用いて上記各素子を製造する場
合、各素子毎に不純物が異なるメルトを準備しなければ
ならないという問題があった。(/i Problems to be Solved by the Invention However, if the impurities are different between the blue light-emitting element material and the red 2S light-emitting element material, for example, Ruri made of high-purity graphite contains medium glue and SiC melt. However, when manufacturing each of the above devices using a liquid phase epitaxial growth method in which a substrate is immersed in such a melt and a SAC single crystal is grown on the substrate, a melt containing different impurities must be prepared for each device. The problem was that it didn't.
に）問題点を解決するための手段
本発明は斯る点に鑑みてなされたもので、従来６■タイ
プＳｉＣからなる青色発光素子の不純物として用いられ
ていｆｃＮ及びムｌを不純物とした際赤色発光素子材料
として最適となるＳｉＣ単結晶の液相エピタキシャル成
長方法を提供せんとするもので、その構成的特徴は６Ｒ
タイプＳｉ０単結晶基板を高純度グツファイト製るつぼ
中に収納場れたＳｉメルト中に浸漬することにより上記
基板上にＳｉＣ単結晶を成長せしめるに際して、上記８
Ｉメルトの成長温ｇｌを１４５０°Ｃ〜１５２０°Ｃと
したことにある。B) Means for Solving the Problems The present invention has been made in view of the above-mentioned problems. Conventionally, when fcN and mul are used as impurities in a blue light-emitting element made of type 6 SiC, red light is emitted. The purpose of this project is to provide a liquid phase epitaxial growth method for SiC single crystals that is optimal as a light emitting device material, and its structural features are 6R.
When growing a SiC single crystal on a type Si0 single crystal substrate by immersing it in Si melt housed in a crucible made of high-purity gutsphite, the above 8.
The reason is that the growth temperature gl of the I-melt is set to 1450°C to 1520°C.
（ホ）作 用
このような成長方法では、６ｎｓｉｃ単結晶基板上に３
ＣタイプＳｉＣ単結晶が成長する。また斯る６Ｃタイプ
ＳｉＣ単結晶はＮ及びＡｌを夫々ｎ型及びｐ型の不純物
とすると赤色発光素子の好適な材料となる。尚、Ｓｉメ
ルトの成長＠農が１４５０°Ｃ以下となるとＳｉが析出
しＳｉＣ単結晶が成長せず、ま＆１５２０°Ｃ以上とな
ると６ＨタイプＳｉＣ単結晶が成長する。(e) Effect In this growth method, 3
A C type SiC single crystal is grown. Further, such a 6C type SiC single crystal becomes a suitable material for a red light emitting device when N and Al are used as n-type and p-type impurities, respectively. Note that when the growth temperature of the Si melt is below 1450°C, Si precipitates and no SiC single crystal grows, and when the temperature is above 1520°C, a 6H type SiC single crystal grows.
（へ）実施例
第１図は本発明を用いて製造されたＳｉＣ赤色発光素子
を示し、（１）Ｆ１６ ｋｎタイプＳｉＣ単結晶からな
るｎ型基板、（２）は該基板上に積和された３Ｃタイプ
ＳｉＣからなるｎ型層であり、該層はドーパントとして
Ｎ及び発光中心としての微量のＡｌを含み、約５ＸＩＱ
／ｄのキャリア濃度を有する。（３）は上記ｎ型ｈ（２
）上に積層された３０タイプＳｉＣからなるＰ型層であ
り、該りはドーパントとしてＡｌを含み、約５Ｘ１０
／ｄのキャリア濃度を有する。(f) Example Figure 1 shows a SiC red light emitting device manufactured using the present invention, in which (1) an n-type substrate made of F16 kn type SiC single crystal; It is an n-type layer made of 3C type SiC, which contains N as a dopant and a trace amount of Al as a luminescent center, and has an approximately 5XIQ
It has a carrier concentration of /d. (3) is the n-type h(2
) is a P-type layer consisting of 30 type SiC laminated on top, which contains Al as a dopant and has a thickness of approximately 5×10
It has a carrier concentration of /d.
次に上記各層の成長方法について説明する。Next, a method for growing each of the above layers will be explained.
第２図は８ ｉｃ単結晶成長に用いる液相エピタキシャ
ル成長装置を示し、ＯＬは高純度グラフ１イトからなる
るつは、■は！＆（１）を一端に保持する基板保持具で
あり、上記るつは（１）ｉ中に８鳳メルトａ３を収納し
、斯るメルト似・中に上記基板（１）を浸漬することに
より基板上に８ ｉＣ単結晶が成長する。Figure 2 shows a liquid phase epitaxial growth apparatus used for 8 IC single crystal growth, and the OL is made of high-purity graphite. & (1) is a substrate holder that holds the substrate (1) at one end. An 8 iC single crystal is grown on the substrate.
斯る装置を用いてｎ型層＋２１ ｇ、基板（１）上に成
長せしめるためには、まず上記Ｓｉメル）（１３・とじ
てＮが３．５Ｘ１０ Ｗｔ、％及びムｌが０．０７４
ｗｔ 、％が夫々ドープされ、かつ１４５０°Ｃ〜１５
２０°Ｃに保持されたＳｉメルトを用い、斯るメルト中
（！３に基板（１）を浸漬することにより斯る基板（１
）上にｎ型層（２゛が成長する。In order to grow an n-type layer +21 g on the substrate (1) using such an apparatus, first the above Si melt) (13.
wt,% respectively doped and 1450°C~15
Using a Si melt maintained at 20°C, the substrate (1) is immersed in the melt (!3).
) on which an n-type layer (2゛) is grown.
また、Ｐ型層４（３；の成長はＳ１メルト０３としてＡ
ｌを２．５４ｗｔ 、 ９６含有し、かつ１４５０°Ｃ
〜１５２０”Ｃに保持された８鳳メルトを片い、斯るメ
ルト中にｎ型層（２、か形成されｆｃ基板（１；を浸漬
することにより行なう。In addition, the growth of P-type layer 4 (3) is performed as S1 melt 03.
2.54wt, 96%, and 1450°C
This is carried out by separating the 8-hole melt held at ~1520''C and immersing the fc substrate (1) on which the n-type layer (2) is formed into the melt.
第６図はこのようにして得られたＳｉＣ赤色発光素子の
発光特性を示し、この図より明らかな如＜６１Ｑｎｍ付
近番こ発光ピークを有する橙乃至赤色の発光が得られる
。FIG. 6 shows the luminescence characteristics of the SiC red light emitting device thus obtained, and as is clear from this diagram, orange to red light emission having a luminescence peak around <61 Q nm is obtained.
尚、参考までに、上記ｎ型に゛（２）及びＰ型層（３，
形成時のＳｉメル） Ｑａの温度を１６００°Ｃとした
際のＳｉＣ発光素子の発光特性を第４図に示す。第４図
より明らかな如く、Ｓｉメルト温度を１６００℃とする
と４６０ｎｍ付近に発光ピークを有する青色発光が得ら
れる。これはδ長じたｎ型層（２゜及びＰ！！１（３１
の結晶型が６Ｈタイプとなるためである。For reference, the above n-type layer (2) and P-type layer (3,
FIG. 4 shows the light emitting characteristics of the SiC light emitting element when the temperature of Si mel Qa at the time of formation was 1600°C. As is clear from FIG. 4, when the Si melt temperature is set to 1600° C., blue light emission having an emission peak around 460 nm is obtained. This is an n-type layer with δ length (2° and P!!1 (31
This is because the crystal type of is 6H type.
（ト）発明の効果
本発明によれば、Ａｌ及びＮを不純物もしくは発光中心
として含むＳｉメルトの温度を変更するだけで赤色発光
接合に通した３０タイプＳｉＣ及び青色発光接合に適し
た６ＨタイプＳｉ０を任意に得ることが可能となるので
、同一メルトより赤色及び青色発光素子を成長できる。(G) Effects of the Invention According to the present invention, 30 type SiC that can be passed through red light emitting junctions and 6H type Si0 suitable for blue light emitting junctions can be made by simply changing the temperature of the Si melt containing Al and N as impurities or luminescent centers. can be obtained arbitrarily, so red and blue light-emitting devices can be grown from the same melt.
第１図はＳｉＣ＃色発光素子を示す断面図、第２図は本
発明に用いた液相エピタキシャル成長装置を示すＶｒ面
図、第６図及び第４ＬＡＦｉ発光特性図である。
（１；・・・・・・基板、お・・・・・・Ｓｉメルト。
第１図
第２図
第３図
老尤似度
＃Ｌ殉崖
ｆ：丸板−ｋ（７Ｌ気）FIG. 1 is a cross-sectional view showing a SiC# color light emitting device, FIG. 2 is a Vr view showing a liquid phase epitaxial growth apparatus used in the present invention, FIG. 6 and fourth LAFi light emission characteristic diagram. (1;...Substrate,...Si melt. Figure 1 Figure 2 Figure 3 Old likelihood #L martyrdom f: Round plate-k (7L)
Claims (1)
ト製るつぼ中に収納されたＳｉメルト中に浸漬すること
により上記基板上にＳｉＣ単結晶を成長せしめるに際し
て、上記Ｓｉメルトの成長温度を１４５０℃〜１５２０
℃としたことを特徴とするＳｉＣ単結晶の液相エピタキ
シャル成長方法。(1) When growing a SiC single crystal on the substrate by immersing a 6H type SiC single crystal substrate in a Si melt housed in a crucible made of high-purity graphite, the growth temperature of the Si melt is set at 1450° C. 1520
A method for liquid phase epitaxial growth of SiC single crystal, characterized in that the temperature is .degree.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59208702A JPS6185822A (en) | 1984-10-04 | 1984-10-04 | Liquid epitaxial growth process of sic single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59208702A JPS6185822A (en) | 1984-10-04 | 1984-10-04 | Liquid epitaxial growth process of sic single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6185822A true JPS6185822A (en) | 1986-05-01 |
Family
ID=16560660
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59208702A Pending JPS6185822A (en) | 1984-10-04 | 1984-10-04 | Liquid epitaxial growth process of sic single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6185822A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63179516A (en) * | 1987-01-20 | 1988-07-23 | Sanyo Electric Co Ltd | Manufacture of silicon carbide single crystal |
| JP2010228939A (en) * | 2009-03-26 | 2010-10-14 | Nagoya Univ | METHOD FOR PRODUCING 3C-SiC SINGLE CRYSTAL |
| WO2014196437A1 (en) * | 2013-06-08 | 2014-12-11 | エルシード株式会社 | METHOD FOR PRODUCING SiC MATERIAL AND SiC MATERIAL LAMINATE |
-
1984
- 1984-10-04 JP JP59208702A patent/JPS6185822A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63179516A (en) * | 1987-01-20 | 1988-07-23 | Sanyo Electric Co Ltd | Manufacture of silicon carbide single crystal |
| JPH0565067B2 (en) * | 1987-01-20 | 1993-09-16 | Sanyo Electric Co | |
| JP2010228939A (en) * | 2009-03-26 | 2010-10-14 | Nagoya Univ | METHOD FOR PRODUCING 3C-SiC SINGLE CRYSTAL |
| WO2014196437A1 (en) * | 2013-06-08 | 2014-12-11 | エルシード株式会社 | METHOD FOR PRODUCING SiC MATERIAL AND SiC MATERIAL LAMINATE |
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