JPH0380197A - Production of single crystal of semiconductor sic - Google Patents
Production of single crystal of semiconductor sicInfo
- Publication number
- JPH0380197A JPH0380197A JP21458889A JP21458889A JPH0380197A JP H0380197 A JPH0380197 A JP H0380197A JP 21458889 A JP21458889 A JP 21458889A JP 21458889 A JP21458889 A JP 21458889A JP H0380197 A JPH0380197 A JP H0380197A
- Authority
- JP
- Japan
- Prior art keywords
- sic
- temp
- single crystal
- base material
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000013078 crystal Substances 0.000 title claims abstract description 29
- 239000004065 semiconductor Substances 0.000 title claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002994 raw material Substances 0.000 claims abstract description 17
- 238000005229 chemical vapour deposition Methods 0.000 claims abstract description 4
- 229910021478 group 5 element Inorganic materials 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 17
- 238000006243 chemical reaction Methods 0.000 abstract description 14
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 10
- 239000002019 doping agent Substances 0.000 abstract description 7
- 229910052681 coesite Inorganic materials 0.000 abstract description 5
- 229910052906 cristobalite Inorganic materials 0.000 abstract description 5
- 239000000377 silicon dioxide Substances 0.000 abstract description 5
- 235000012239 silicon dioxide Nutrition 0.000 abstract description 5
- 229910052682 stishovite Inorganic materials 0.000 abstract description 5
- 229910052905 tridymite Inorganic materials 0.000 abstract description 5
- 239000000203 mixture Substances 0.000 abstract description 4
- 229910052581 Si3N4 Inorganic materials 0.000 abstract description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 15
- 229910002804 graphite Inorganic materials 0.000 description 13
- 239000010439 graphite Substances 0.000 description 13
- 238000000034 method Methods 0.000 description 12
- 239000010410 layer Substances 0.000 description 7
- 238000001556 precipitation Methods 0.000 description 5
- 229910052799 carbon Inorganic materials 0.000 description 4
- 150000001875 compounds Chemical class 0.000 description 4
- 239000002244 precipitate Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 238000000815 Acheson method Methods 0.000 description 1
- 229910018540 Si C Inorganic materials 0.000 description 1
- 229910005091 Si3N Inorganic materials 0.000 description 1
- 241000282887 Suidae Species 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000001941 electron spectroscopy Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- 230000008022 sublimation Effects 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
Landscapes
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
Description
【発明の詳細な説明】
〔産業上の利用分！Ｉ！［
本発明は、ＣＶＤ法を用いドーピングを（’１′なうエ
ピタキシャル成長によって、ＬＥＤ（可視発光タイオー
１”）、ＩＣ等に用いられる半導体ＳｉＣ単結晶を製造
する方法に関する。[Detailed description of the invention] [Industrial use! I! [The present invention relates to a method of manufacturing a semiconductor SiC single crystal used for LEDs (visible light emitting diode 1"), ICs, etc. by doping ('1') epitaxial growth using the CVD method.
従来、ドーピングしたＳｉＣ単結晶を得る方法としては
、アチソン法で合成された六方晶ＳｉＣの爪状結晶を基
材として、その表面にＳｉＣの昇華、或いは黒鉛容器内
の溶融Ｓｌ中にｅ？Ｍして、ＳｉＣをエピタキシャル成
長させる方法（特開平１１０８２００シフ公相、］−１
１３３９９８号公報、または、Ｓｉ単結晶表面にＳｉＣ
を超格子構造的に成長させる方法（＋９８８、秋季応物
学会、予稿集、６１）−Ｚ−１１）か知られている。Conventionally, methods for obtaining doped SiC single crystals include sublimation of SiC on the surface of a claw-shaped crystal of hexagonal SiC synthesized by the Acheson method, or e.g. Method for epitaxially growing SiC using M (JP-A-1108200 Schiff et al.)-1
133998, or SiC on the Si single crystal surface.
A method of growing in a superlattice structure (+988, Autumn Society of Applied Physics, Proceedings, 61)-Z-11) is known.
しかしながら、前者においては、ヘースとなる基材とし
てＳｉＣの爪状結晶を使用せざるを得ない。ところで、
この爪状結晶は、再現性よく作製することか困ガ］て、
大きさか１ｃｍ程度で、大きなものが出来ないばかりで
なく、臂開性て扱いにくい等の問題かあり、後者は、プ
ロセスか複雑で作製に手間がかかる等の問題かある。However, in the former case, SiC nail-shaped crystals must be used as the base material for the hair. by the way,
It is difficult to produce these nail-shaped crystals with good reproducibility.
The size is about 1 cm, which not only makes it impossible to make large pieces, but also makes it difficult to handle due to the ability to open the arms, and the latter has problems such as the process being complicated and requiring time and effort.
本発明者等は、」二記の問題を解決し、半導体ＳＩＣ単
結晶を再現性よく容易につくることが出来る方法を得へ
く鋭意研究した結果、ＳｉＣの結晶系には、六方量系の
６１１．／ＩＩ＋、２＋１八りや、ＳＬ方晶系の３Ｃ型
かあり、それぞれ２〜３ｅＶの禁制帯幅（Ｂａｎｄ Ｇ
ａｐ）を持っているので、！・−ピッグを伴なうエピタ
牛ンヤル成長を口出に行なうことか出来ると考えた。The inventors of the present invention have conducted extensive research to solve the problems mentioned in 2.1 and to find a method that can easily produce semiconductor SIC single crystals with good reproducibility. 611. /II+, 2+1 Yariya, and SL cubic 3C type, each with a forbidden band width of 2 to 3 eV (Band G
ap), so! -I thought it would be possible to use epitaph growth with pigs as an excuse.
不発明は上記の考えにノ、（ついてなされたちので、再
現性よく六方晶系、或いは立方晶系ＳｉＣを作意に造り
分け、かつ製造中にドーピングを行なう半導体ＳｉＣ単
結晶の製造法を提供することを目的とする。The invention is based on the above idea, and therefore provides a method for producing a semiconductor SiC single crystal in which hexagonal or cubic SiC is intentionally produced with good reproducibility, and doping is performed during production. The purpose is to
上記の目的を達成するため、本発明の方法においては、
５ｉｎ２とＣとを原料にして、ＣＶ Ｄ 法によりＳＣ
単結晶を製造するに際し、系内に１・−ピック元素を導
入して、ＳｉＣ結晶中にドープする。In order to achieve the above object, in the method of the present invention, using 5in2 and C as raw materials, SC
When producing a single crystal, a 1-Pick element is introduced into the system and doped into the SiC crystal.
本発明に用いるＣＶＤ法は、原料であるＳｉｎ。The CVD method used in the present invention uses Sin as a raw material.
とＣとの混合物をカス化させ、基材」二にＳｉＣとして
析出さる、下記反応式による方法である。This is a method according to the following reaction formula, in which a mixture of SiC and C is formed into a scum and precipitated as SiC on a substrate.
高温部におけるカス化反応
Ｓ ｉｏ、−１−ｃ−＞ｓ ｉ○ｌＣＯ低温部における
析出反応は基材か炭素の場合５ｉＯ−１−２Ｃ−＞５ｉ
Ｃ−１−Ｃ０の反応か主として起るか、基材か炭素でな
い場合もＳｉＣか生成することから、高温部て生成した
ＣＯガスかｆＩ（高部で
２Ｃ（１＞ＣＩ Ｃｏ。Casing reaction in the high temperature section S io, -1-c->s i○lCO Precipitation reaction in the low temperature section is 5iO-1-2C->5i when the base material is carbon
Whether the C-1-C0 reaction mainly occurs or because SiC is produced even if the base material is not carbon, the CO gas produced at the high temperature part is fI (2C (1>CI Co at the high part).
により、Ｃが析出し、これにより ２Ｓｉ○＋２Ｃ→２ＳｉＣ＋０２ の反応も起っていると推定される。As a result, C precipitates out, which results in 2Si○+2C→2SiC+02 It is assumed that this reaction is also occurring.
原料Ｓｉｎ、としては、光フアイバー用のＳｉｎ。The raw material Sin is Sin for optical fiber.
を用い、Ｃ源としては、高純度黒鉛を用いることによっ
て、置局に高純度ＳｉＣを析出させることか出来る。By using high-purity graphite as a C source, high-purity SiC can be precipitated at the station.
第１図は、不発１１ＪＪの方法に使用する反応装置の一
例を示すもので、図中符号１は反応容器である。FIG. 1 shows an example of a reaction apparatus used in the method of misfire 11JJ, and the reference numeral 1 in the figure is a reaction vessel.
反応容器１は、それぞれ外部より加熱される高温部（カ
ス化部）２および低温部（析出部）３よりなる。The reaction vessel 1 consists of a high temperature section (cassation section) 2 and a low temperature section (precipitation section) 3, which are heated from the outside.
Ｊｌ記高渦部２には、原料Ｓｉ○２およびＣをモル比て
１１±０５の割合でｄ合した混合物４を収納した黒鉛容
器５を配置し、低温部３には、Ｓｌ○カスの流れ、高度
、カス濃度等によって決められた位置に、基材６を支持
台或いは支持棒６ａにより支持し配置する。A graphite container 5 containing a mixture 4 obtained by combining raw materials Si○2 and C at a molar ratio of 11±05 is arranged in the Jl high vortex part 2, and a graphite container 5 containing a mixture 4 in which raw materials Si○2 and C are combined at a molar ratio of 11±05 is placed, and in the low temperature part 3, Sl○ scum is placed. The base material 6 is supported and placed by a support stand or a support rod 6a at a position determined depending on the flow, altitude, waste concentration, etc.
しかる後、反応容ａ’ｒｓ Ｉ内を０． ］ 〜ｌ Ｏ
Ｔｏｒｒに減圧するとともに、畠１ｉＡ部２を、１７０
０〜２０００°Ｃ１低渦部３を、１６００〜１８００°
Ｃに加熱すると、高温部２より発生したＪｊスフは、Ｌ
（材６に達し面にＳｉＣが析出する。After that, the inside of the reaction volume a'rs I was set to 0. ] ~l O
While reducing the pressure to Torr, the Hatake 1iA section 2 was heated to 170 Torr.
0~2000°C1 low vortex part 3, 1600~1800°
When heated to C, Jj sufu generated from high temperature section 2 becomes L
(The material 6 is reached and SiC is deposited on the surface.
生成する結晶系は、析出部３の温度によって穴なり、］
６００〜１８００°Ｃの場合には立方晶系３Ｃとなり
、１８００〜２０００“Ｃては六方晶系となり、６ Ｈ
１４Ｈ１２＋−１，２１尺などか多く生成する。The crystal system that is generated becomes a hole depending on the temperature of the precipitation part 3,]
In the case of 600 to 1800°C, it becomes cubic system 3C, and in the case of 1800 to 2000°C, it becomes hexagonal system, 6H
14H12+-1, 21 shaku, etc. are generated in large numbers.
これら結晶は、それぞれＢａｎｄＧａｐか異なり例えば
３Ｃては２ 、２ ｅＶ、６１−１ては２．８６ｅＶ、
２Ｉ］ては３ 、３ ｅＶとなる。青色Ｌ Ｅ Ｄては
、Ｂ ａｎｄＧａｐ２．８ｅＶ近傍か必要となるのて、
これを有する結晶が優先している市は重要で、温度調整
によって必要とするＢａｎｄＧａｐか優先するようにす
る。These crystals each have a different BandGap, for example, 3C has a band gap of 2.2 eV, 61-1 has a band gap of 2.86 eV,
2I] is 3.3 eV. For blue LED, the B and Gap needs to be around 2.8eV, so
The city where the crystal having this has priority is important, and the required BandGap can be prioritized by temperature adjustment.
」１記基材６としては、黒鉛或いは既に作製されたＳｉ
Ｃ単結晶か用いられる。” 1. As the base material 6, graphite or already produced Si
C single crystal is used.
黒鉛を基材６とした場合には、径にして０５〜１ｍｍの
５ｉＣ１１ｉ占品か桂状に成長してゆくので、エピタキ
シャル層は基材面に平行な形て成長する。When graphite is used as the base material 6, the epitaxial layer grows parallel to the surface of the base material because it grows in a 5iC11i shape with a diameter of 05 to 1 mm.
したかって黒鉛基材を除去した後、析出部を切断すれば
よい。Therefore, after removing the graphite base material, the precipitated portion may be cut.
また既存のＳｉＣ単結晶を基材６として使用した場合は
、結晶の直径を大きくする方向に向かって各面か成長す
る。したかって基材６となるＳｉＣの表面か多くとれる
ように切出して用いるのが有利である。Further, when an existing SiC single crystal is used as the base material 6, the crystal grows on each side in the direction of increasing the diameter of the crystal. Therefore, it is advantageous to cut out and use the SiC that will become the base material 6 so that a large amount of the surface can be removed.
またドーピングを行なうには、原料Ｓ］０２中に、高特
１１点化合物て、かつドーピング時に外乱となる元素を
含有しない化合物を添加する。Further, in order to perform doping, a compound which is a high-performance 11-point compound and does not contain any elements that cause disturbance during doping is added to the raw material S]02.
例えばＰ型においては、Ｂ、Ａ＆、Ｃａ等が１・−プさ
れるが、この場合にはＢ 、ＣＸＡ ＬＣ、ＣａＣｌＢ
、Ｈ６が原料５ｉＯ−に添加され、ｎ型においては、Ｎ
、Ｐ等かＳｉ、Ｈ４、ＰＨ，、Ｎ Ｈ３として添加され
る。この際、Ｐ Ｉ−１、等は、外部より反応容器１内
にガス状で供給してもよい。For example, in the P type, B, A&, Ca, etc. are 1-pulled, but in this case, B, CXA LC, CaClB
, H6 is added to the raw material 5iO-, and in the n-type, N
, P, etc. or Si, H4, PH,, NH3. At this time, P I-1, etc. may be supplied in gaseous form into the reaction vessel 1 from the outside.
またｐ −ｎ接合の場合には、１・−バントを切換える
ことか必要となるか、カス化速度を予めｌｊ７に＋ｉ？
ｊしておき、前の１・−パンｌ−／ｌ）？ｉ’ｉ失した
後、次の１・−パントが添加されているＳ ｉ Ｏｐを
高／！５１部にｌｔ給したり、或いは、予め別に用意さ
れた次の１・−パンＩ・か添加されているＳｉｎ、とＣ
との７ｉｉＡ合物を収納している黒鉛容器と交換するこ
とによって行なってもよい。Also, in the case of a p-n junction, is it necessary to switch between 1 and - bands, or is it necessary to change the scum formation rate to lj7+i?
j and the previous 1・-bread l-/l)? After i'i is lost, the next 1-Punt is added S i Op to high/! 51 parts, or add the following 1.-Bread I. or Sin, and C prepared separately in advance.
This may be done by replacing the graphite container containing the 7iiA compound.
」１記ドーパントのドープ鼠は通常１０１７〜１０″原
子／ ｃ ｃとされるか、原料中に添加するｌ； ／
ｓ＋１ン１−化合物の量を調整することによって、ド
ーピングレヘルは自由に調整される。``The dopant of the above dopant is usually 1017~10'' atoms/cc or added to the raw material;/
By adjusting the amount of s+1-1-compound, the doping level can be freely adjusted.
次に実施例を示して本発明を説明する。 Next, the present invention will be explained with reference to Examples.
実施例１
第１図の装置を用い、アチソン法で製造した大きさ約Ｑ
、 ５ ｍｍの単結晶ＳｉＣ粒を黒鉛基材上に、粒間
に２〜３ｍｍ程度の間隙を設けて配置し、純度９９、９
９９９％以」−の５１０２５００ｇ、Ｃ５００ｇおよび
ドーパントとしてＳｉ○、に対してＱ、１ｗｔ％の５１
３Ｎ４を添加した原料を黒鉛容器に収納して用いた。Example 1 Using the apparatus shown in Fig. 1, the size of approximately Q
, 5 mm single crystal SiC grains were arranged on a graphite base material with a gap of about 2 to 3 mm between grains, and the purity was 99.9 mm.
5102500g of 999% or more, 500g of C and Si○ as a dopant, Q, 1wt% of 51
The raw material to which 3N4 was added was stored in a graphite container and used.
反応容器内を０．２Ｔｏｒｒに保持し、カス化部の温度
を２０００°Ｃ１析出部の温度を１９００ ’Ｃとし、
エピタキシャル成長層間５１１ｒとして約５０μｍの六
方晶系のエピタキシャル成長層を得、この析出物の導電
性等を測定した。The inside of the reaction vessel was maintained at 0.2 Torr, the temperature of the casing part was 2000°C, the temperature of the precipitation part was 1900'C,
An approximately 50 μm hexagonal epitaxial growth layer was obtained as the epitaxial growth interlayer 511r, and the conductivity and the like of this precipitate were measured.
実施例２
原料に添加するドーパントとじて、Ｓｉ３Ｎ、の代りに
０．０５ｗｔ％のＢ４Ｃを用いた以外は実施例１と同し
にして５０μｍの六方晶系の成長層を得、導電性等を測
定した。Example 2 A hexagonal growth layer of 50 μm was obtained in the same manner as in Example 1, except that 0.05 wt% B4C was used instead of Si3N as the dopant added to the raw material, and the conductivity etc. It was measured.
実施例３
原料に添加するドーパントとじて５１３Ｎ−の代りに５
ＩＯ２に対してＯ，１ｗｔ％のＡＱ４Ｃ３を用いた以外
は実施例１と同じにして５０μｍの六方晶系ＳｉＣのエ
ピタキシャル戊長層を得、導電性等を測定した。Example 3 The dopant added to the raw material was 513N- instead of 513N-.
A 50 μm hexagonal SiC epitaxial long layer was obtained in the same manner as in Example 1 except that AQ4C3 containing 1 wt% of O and IO2 was used, and its conductivity and the like were measured.
実施例４
ＳｉＯ２、ＣおよびＳｉ○、に対してＱ、１ｗｔ％の５
１３Ｎ＋を添加した原料を黒鉛容器に収納したものと、
５１０７、ＣおよびＳｉｎ、に対してＱ、１ｗｔ％のＢ
、Ｃを添加した黒鉛容器に収納したものとを予め用意し
、先ずＳｉ３Ｎ４をｌ−一７ ＸＨ７１〜として２、５
ｈｒエピタキンヤル成長を行ない、次１．）テ■３゜
Ｃヲｌ”−パン１へとして２ 、５ ｈｒエピタキシャ
ル成長を行なった以外は実施例１と同しにして５０μｍ
の六方晶系成長層を得た。Example 4 Q, 1 wt% 5 for SiO2, C and Si○
13N+ added raw material stored in a graphite container,
5107, Q for C and Sin, 1 wt% B
, stored in a graphite container doped with C, were prepared in advance, and first, Si3N4 was prepared as 1-17XH71~2,5
Perform hr epitaaxial growth, and then perform the following 1. ) The same method as in Example 1 except that epitaxial growth was performed for 2.5 hours on 3°C 1''-pan 1.
A hexagonal growth layer was obtained.
この成長層をオーン、−電子分光広（ＡＥＳ）によって
測定し、析出前半てＮ、後半てＢか含ま４″しているこ
をと確認した。This grown layer was measured by electron spectroscopy (AES), and it was confirmed that the first half of the deposition contained N and the second half contained 4'' of B.
実施例５
第１図の装置を用い、５ｃｍ角、厚さ５ｍｍの高純度黒
鉛（灰分］Ｏｐｐｍ以下）を系材とし、析出部温度１７
００°Ｃとした以外は実施例２と同じζこして、立方晶
系の成長層を得、導電性等をＨ１ｌ＋定しｔコ。Example 5 Using the apparatus shown in Fig. 1, a 5 cm square, 5 mm thick high-purity graphite (ash content: Oppm or less) was used as the system material, and the temperature of the precipitation part was 17.
The same process as in Example 2 was carried out except that the temperature was 00°C, a cubic crystal growth layer was obtained, and the conductivity etc. were determined as H1l+.
実施例１〜５の結果を一話して第１表に示−す。A summary of the results of Examples 1 to 5 is shown in Table 1.
第
表
〔発明の効果〕
以上述へたように、本発明の方法は、ＳｉＯ２・Ｃを原
料としたＣＶＤＫにより、容易に各種ドーパントをドー
プすることか出来、半導体ＳｉＣ単結晶を容易に製造す
ることか出来る。Table [Effects of the Invention] As described above, the method of the present invention allows easy doping of various dopants using CVDK using SiO2.C as a raw material, and facilitates the production of semiconductor SiC single crystals. I can do it.
第１図は本発明の方法を実施する装置の一例を示す図で
ある。
１・ ・反応容器、２・・ 高畠部（カス化部）、３低
ｎ１部
（析出部）
１１ｓ合物
（Ｓ
○２−１
Ｃ）
５・
黒鉛容器、
Ｌ（材、
ａ
支
持合または支持棒、
高温部より発生した）ＪFIG. 1 is a diagram showing an example of an apparatus for carrying out the method of the present invention. 1. Reaction container, 2. Takabatake part (casing part), 3 low n1 part (precipitated part) 11s compound (S ○2-1 C) 5. Graphite container, L (material, a support joint or support rod, generated from a high temperature part)J
Claims (2)
ＳｉＣ単結晶を製造するに際し、系内にドーピング元素
を導入して、ＳｉＣ結晶中にドープすることを特徴とす
る半導体ＳｉＣ単結晶の製造法。(1) Production of a semiconductor SiC single crystal characterized by introducing a doping element into the system and doping it into the SiC crystal when producing the SiC single crystal by the CVD method using SiO_2 and C as raw materials. Law.
項（１）記載の半導体ＳｉＣ単結晶の製造法。(2) The method for producing a semiconductor SiC single crystal according to claim (1), wherein the doping element is a group III or group V element.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21458889A JP2749898B2 (en) | 1989-08-21 | 1989-08-21 | Manufacturing method of semiconductor SiC single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP21458889A JP2749898B2 (en) | 1989-08-21 | 1989-08-21 | Manufacturing method of semiconductor SiC single crystal |
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| Publication Number | Publication Date |
|---|---|
| JPH0380197A true JPH0380197A (en) | 1991-04-04 |
| JP2749898B2 JP2749898B2 (en) | 1998-05-13 |
Family
ID=16658204
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP21458889A Expired - Fee Related JP2749898B2 (en) | 1989-08-21 | 1989-08-21 | Manufacturing method of semiconductor SiC single crystal |
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| JP (1) | JP2749898B2 (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261612A (en) * | 2005-03-18 | 2006-09-28 | Shikusuon:Kk | Silicon carbide semiconductor, its manufacturing method and manufacturing apparatus |
| WO2008023635A1 (en) * | 2006-08-22 | 2008-02-28 | Shin-Etsu Chemical Co., Ltd. | SINGLE-CRYSTAL SiC AND PROCESS FOR PRODUCING THE SAME |
| JP2014166957A (en) * | 2014-04-24 | 2014-09-11 | Sumitomo Electric Ind Ltd | Silicon carbide semiconductor, and method and device for manufacturing the same |
| JP2015122540A (en) * | 2015-03-16 | 2015-07-02 | 住友電気工業株式会社 | Silicon carbide semiconductor, and method and apparatus for manufacturing the same |
-
1989
- 1989-08-21 JP JP21458889A patent/JP2749898B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006261612A (en) * | 2005-03-18 | 2006-09-28 | Shikusuon:Kk | Silicon carbide semiconductor, its manufacturing method and manufacturing apparatus |
| WO2008023635A1 (en) * | 2006-08-22 | 2008-02-28 | Shin-Etsu Chemical Co., Ltd. | SINGLE-CRYSTAL SiC AND PROCESS FOR PRODUCING THE SAME |
| JP2008050174A (en) * | 2006-08-22 | 2008-03-06 | Shin Etsu Chem Co Ltd | SINGLE CRYSTAL SiC AND METHOD FOR PRODUCING THE SAME |
| JP2014166957A (en) * | 2014-04-24 | 2014-09-11 | Sumitomo Electric Ind Ltd | Silicon carbide semiconductor, and method and device for manufacturing the same |
| JP2015122540A (en) * | 2015-03-16 | 2015-07-02 | 住友電気工業株式会社 | Silicon carbide semiconductor, and method and apparatus for manufacturing the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2749898B2 (en) | 1998-05-13 |
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