JPS63188938A - Method for vapor growth of gallium nitride compound semiconductor - Google Patents

Method for vapor growth of gallium nitride compound semiconductor

Info

Publication number
JPS63188938A
JPS63188938A JP2112687A JP2112687A JPS63188938A JP S63188938 A JPS63188938 A JP S63188938A JP 2112687 A JP2112687 A JP 2112687A JP 2112687 A JP2112687 A JP 2112687A JP S63188938 A JPS63188938 A JP S63188938A
Authority
JP
Japan
Prior art keywords
compound semiconductor
sapphire substrate
gallium nitride
reaction
nitride compound
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2112687A
Other versions
JPH0573252B2 (en
Inventor
Isamu Akasaki
Hiroshi Amano
Kazumasa Hiramatsu
Katsuhide Manabe
Nobuo Okazaki
Original Assignee
Toyoda Gosei Co Ltd
Univ Nagoya
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toyoda Gosei Co Ltd, Univ Nagoya filed Critical Toyoda Gosei Co Ltd
Priority to JP2112687A priority Critical patent/JPH0573252B2/ja
Priority claimed from DE19883852402 external-priority patent/DE3852402T2/en
Publication of JPS63188938A publication Critical patent/JPS63188938A/en
Priority claimed from US07/811,899 external-priority patent/US5218216A/en
Publication of JPH0573252B2 publication Critical patent/JPH0573252B2/ja
Anticipated expiration legal-status Critical
Application status is Expired - Lifetime legal-status Critical

Links

Abstract

PURPOSE: To realize the vapor growth of a gallium nitride compound semiconductor thin film by a method wherein a buffer layer composed of aluminum nitride is grown on an a-plane of a sapphire substrate.
CONSTITUTION: A single-crystal sapphire substrate 24, which has been cleaned by an organic cleaning method and a heat treatment and whose main plane is an a-plane, is mounted on a susceptor; the sapphire substrate 24 is vapor- etched while H2 is flowing into a reaction chamber through a first reaction-gas pipe 25 and a second reaction-gas pipe 26. Then, after the temperature has been lowered, the substrate is heat-treated while H2, NH3 and trimethylaluminum are fed through the first reaction-gas pipe 25. During this heat treatment, a buffer layer 30 composed of AlN is formed. Because a gallium nitride compound semiconductor thin film is formed vapor growth on this buffer layer, the crystallinity is improved and it becomes easy to supply the sapphire substrate.
COPYRIGHT: (C)1988,JPO&Japio
JP2112687A 1987-01-31 1987-01-31 Expired - Lifetime JPH0573252B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2112687A JPH0573252B2 (en) 1987-01-31 1987-01-31

Applications Claiming Priority (8)

Application Number Priority Date Filing Date Title
JP2112687A JPH0573252B2 (en) 1987-01-31 1987-01-31
DE19883852402 DE3852402T2 (en) 1987-01-31 1988-01-28 Galliumnitridartige compound semiconductor light-emitting device and consisting thereof and processes for their manufacture.
EP91113265A EP0460710B1 (en) 1987-01-31 1988-01-28 Gallium nitride group compound semiconductor and luminous element comprising it and the process of producing the same
DE19883852402 DE3852402D1 (en) 1987-01-31 1988-01-28 Galliumnitridartige compound semiconductor light-emitting device and consisting thereof and processes for their manufacture.
DE19883850582 DE3850582D1 (en) 1987-01-31 1988-01-28 Gallium nitride semiconductor Lumisneszenzdiode as well as methods for their preparation.
EP88101267A EP0277597B1 (en) 1987-01-31 1988-01-28 Gallium nitride group semiconductor light emitting diode and the process of producing the same
DE19883850582 DE3850582T2 (en) 1987-01-31 1988-01-28 Gallium nitride semiconductor Lumisneszenzdiode as well as methods for their preparation.
US07/811,899 US5218216A (en) 1987-01-31 1991-12-20 Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same

Publications (2)

Publication Number Publication Date
JPS63188938A true JPS63188938A (en) 1988-08-04
JPH0573252B2 JPH0573252B2 (en) 1993-10-14

Family

ID=12046193

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2112687A Expired - Lifetime JPH0573252B2 (en) 1987-01-31 1987-01-31

Country Status (1)

Country Link
JP (1) JPH0573252B2 (en)

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
JPH03252175A (en) * 1990-02-28 1991-11-11 Res Dev Corp Of Japan Manufacture of gallium nitride compound semiconductor
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US6734030B2 (en) 2001-03-06 2004-05-11 Sony Corporation Semiconductor light emitting device and method of fabricating semiconductor light emitting device
US6818465B2 (en) 2001-08-22 2004-11-16 Sony Corporation Nitride semiconductor element and production method for nitride semiconductor element
US6828591B2 (en) 2000-12-15 2004-12-07 Sony Corporation Semiconductor light emitting device and fabrication method thereof
US6830946B2 (en) 2001-02-01 2004-12-14 Sony Corporation Device transfer method and panel
US6831300B2 (en) 2001-02-21 2004-12-14 Sony Corporation Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6870190B2 (en) 2001-03-06 2005-03-22 Sony Corporation Display unit and semiconductor light emitting device
US6924500B2 (en) 2000-07-18 2005-08-02 Sony Corporation Semiconductor light-emitting device and process for producing the same
US7033436B2 (en) 2001-04-12 2006-04-25 Sony Corporation Crystal growth method for nitride semiconductor and formation method for semiconductor device
US7227189B2 (en) 2001-04-19 2007-06-05 Sony Corporation Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
US7250320B2 (en) 2003-03-20 2007-07-31 Sony Corporation Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof
US7361220B2 (en) 2003-03-26 2008-04-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
US8242513B2 (en) 2007-05-18 2012-08-14 Sony Corporation Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device
CN102945906A (en) * 2012-12-06 2013-02-27 上海顿格电子贸易有限公司 LED (light emitting diode) chip with horizontal structure
JP2013187366A (en) * 2012-03-08 2013-09-19 Hitachi Cable Ltd Nitride semiconductor manufacturing method
US8698168B2 (en) 2010-07-08 2014-04-15 Sharp Kabushiki Kaisha Semiconductor device having aluminum nitride layer with void formed therein

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6996150B1 (en) 1994-09-14 2006-02-07 Rohm Co., Ltd. Semiconductor light emitting device and manufacturing method therefor
KR20110134878A (en) 2009-02-13 2011-12-15 덴끼 가가꾸 고교 가부시키가이샤 Composite substrate for led light emitting element, method of production of same, and led light emitting element
CN102484188B (en) 2009-07-31 2015-02-18 电气化学工业株式会社 Led Equipment Purpose Wafer, Method For Manufacturing Same, And Led-equipped Structure Using Led Equipment Purpose Wafer
US9299888B2 (en) 2011-09-13 2016-03-29 Denka Company Limited Clad material for LED light-emitting element holding substrate, and method for manufacturing same

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173829A (en) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Growing method of compound semiconductor thin-film
JPS6191977A (en) * 1984-10-09 1986-05-10 Honeywell Inc Solid ultraviolet ray detector and manufacture thereof

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60173829A (en) * 1984-02-14 1985-09-07 Nippon Telegr & Teleph Corp <Ntt> Growing method of compound semiconductor thin-film
JPS6191977A (en) * 1984-10-09 1986-05-10 Honeywell Inc Solid ultraviolet ray detector and manufacture thereof

Cited By (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5006908A (en) * 1989-02-13 1991-04-09 Nippon Telegraph And Telephone Corporation Epitaxial Wurtzite growth structure for semiconductor light-emitting device
US6830992B1 (en) 1990-02-28 2004-12-14 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
JPH03252175A (en) * 1990-02-28 1991-11-11 Res Dev Corp Of Japan Manufacture of gallium nitride compound semiconductor
US6984536B2 (en) 1990-02-28 2006-01-10 Toyoda Gosei Co., Ltd. Method for manufacturing a gallium nitride group compound semiconductor
US6472689B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Light emitting device
US6472690B1 (en) 1990-02-28 2002-10-29 Toyoda Gosei Co., Ltd. Gallium nitride group compound semiconductor
US6607595B1 (en) 1990-02-28 2003-08-19 Toyoda Gosei Co., Ltd. Method for producing a light-emitting semiconductor device
US5192987A (en) * 1991-05-17 1993-03-09 Apa Optics, Inc. High electron mobility transistor with GaN/Alx Ga1-x N heterojunctions
US5296395A (en) * 1991-05-17 1994-03-22 Apa Optics, Inc. Method of making a high electron mobility transistor
US6924500B2 (en) 2000-07-18 2005-08-02 Sony Corporation Semiconductor light-emitting device and process for producing the same
US7221001B2 (en) 2000-07-18 2007-05-22 Sony Corporation Semiconductor light-emitting device and process for producing the same
US6828591B2 (en) 2000-12-15 2004-12-07 Sony Corporation Semiconductor light emitting device and fabrication method thereof
US6830946B2 (en) 2001-02-01 2004-12-14 Sony Corporation Device transfer method and panel
US6921675B2 (en) 2001-02-01 2005-07-26 Sony Corporation Device transfer method and panel
US7233030B2 (en) 2001-02-01 2007-06-19 Sony Corporation Device transfer method and panel
US6831300B2 (en) 2001-02-21 2004-12-14 Sony Corporation Semiconductor light emitting device, manufacturing method of a semiconductor light emitting device and connection structure of an electrode layer
US6734030B2 (en) 2001-03-06 2004-05-11 Sony Corporation Semiconductor light emitting device and method of fabricating semiconductor light emitting device
US6870190B2 (en) 2001-03-06 2005-03-22 Sony Corporation Display unit and semiconductor light emitting device
US7033436B2 (en) 2001-04-12 2006-04-25 Sony Corporation Crystal growth method for nitride semiconductor and formation method for semiconductor device
US7227189B2 (en) 2001-04-19 2007-06-05 Sony Corporation Vapor-phase growth method for a nitride semiconductor and a nitride semiconductor device
US6818465B2 (en) 2001-08-22 2004-11-16 Sony Corporation Nitride semiconductor element and production method for nitride semiconductor element
US7250320B2 (en) 2003-03-20 2007-07-31 Sony Corporation Semiconductor light emitting element, manufacturing method thereof, integrated semiconductor light emitting device, manufacturing method thereof, image display device, manufacturing method thereof, illuminating device and manufacturing method thereof
US7361220B2 (en) 2003-03-26 2008-04-22 Matsushita Electric Industrial Co., Ltd. Method of manufacturing group III nitride single crystal, device used for the method and group III nitride single crystal obtained by the method
US8242513B2 (en) 2007-05-18 2012-08-14 Sony Corporation Method for growing semiconductor layer, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and electronic device
US8698168B2 (en) 2010-07-08 2014-04-15 Sharp Kabushiki Kaisha Semiconductor device having aluminum nitride layer with void formed therein
JP2013187366A (en) * 2012-03-08 2013-09-19 Hitachi Cable Ltd Nitride semiconductor manufacturing method
CN102945906A (en) * 2012-12-06 2013-02-27 上海顿格电子贸易有限公司 LED (light emitting diode) chip with horizontal structure

Also Published As

Publication number Publication date
JPH0573252B2 (en) 1993-10-14

Similar Documents

Publication Publication Date Title
JP3875821B2 (en) GaN film manufacturing method
US5218216A (en) Gallium nitride group semiconductor and light emitting diode comprising it and the process of producing the same
KR19980063861A (en) Method for growing nitride III-V compound semiconductor layer and method for manufacturing nitride III-V compound semiconductor substrate
JP2704181B2 (en) Method of growing a compound semiconductor single crystal thin film
US6274518B1 (en) Method for producing a group III nitride compound semiconductor substrate
Nakada et al. GaN heteroepitaxial growth on silicon nitride buffer layers formed on Si (111) surfaces by plasma-assisted molecular beam epitaxy
US5587014A (en) Method for manufacturing group III-V compound semiconductor crystals
Gaskill et al. OMVPE of GaN and AIN films by metal alkyls and hydrazine
JP3239622B2 (en) Method of forming a semiconductor thin film
JP3026087B2 (en) Vapor deposition method of a gallium nitride-based compound semiconductor
US3963538A (en) Two stage heteroepitaxial deposition process for GaP/Si
TW493207B (en) Method for producing GaN-based compound semiconductor and GaN-based compound semiconductor device
US6110809A (en) Method for manufacturing an epitaxial wafer with a group III metal nitride epitaxial layer
US20010047750A1 (en) Apparatus and method for depositing semiconductor film
TWI362365B (en) Semiconductor layer
US5923950A (en) Method of manufacturing a semiconductor light-emitting device
KR20060002971A (en) Method for growing single crystal gan on silicon
TW418549B (en) Crystal growth method for nitride semiconductor, nitride semiconductor light emitting device, and method for producing the same
TW486744B (en) Growth method of III-IV nitride semiconductors and gas phase growth apparatus
KR920008121B1 (en) Heteroepitaxial growth method
JPH04297023A (en) Crystal growth method of gallium nitride compound semiconductor
JPS63239918A (en) Method for growing iii-v compound semiconductor crystal
JPH04234112A (en) Selective deposition method for polycrystal silicon
JP2623464B2 (en) The gallium nitride-based compound semiconductor light-emitting device
JPH10135516A (en) Semiconductor lamination structure

Legal Events

Date Code Title Description
S111 Request for change of ownership or part of ownership

Free format text: JAPANESE INTERMEDIATE CODE: R313115

R350 Written notification of registration of transfer

Free format text: JAPANESE INTERMEDIATE CODE: R350

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

R250 Receipt of annual fees

Free format text: JAPANESE INTERMEDIATE CODE: R250

EXPY Cancellation because of completion of term