JPS63188937A - Vapor growth system for gallium nitride compound semiconductor - Google Patents
Vapor growth system for gallium nitride compound semiconductorInfo
- Publication number
- JPS63188937A JPS63188937A JP62021125A JP2112587A JPS63188937A JP S63188937 A JPS63188937 A JP S63188937A JP 62021125 A JP62021125 A JP 62021125A JP 2112587 A JP2112587 A JP 2112587A JP S63188937 A JPS63188937 A JP S63188937A
- Authority
- JP
- Japan
- Prior art keywords
- reaction
- gas
- pipe
- gas pipe
- reaction gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 229910002601 GaN Inorganic materials 0.000 title claims description 10
- 239000004065 semiconductor Substances 0.000 title claims description 8
- -1 gallium nitride compound Chemical class 0.000 title description 2
- 239000007789 gas Substances 0.000 claims abstract description 54
- 239000012495 reaction gas Substances 0.000 claims abstract description 54
- 239000010409 thin film Substances 0.000 claims abstract description 15
- 238000001947 vapour-phase growth Methods 0.000 claims description 13
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 5
- 150000001875 compounds Chemical class 0.000 claims description 5
- 150000002902 organometallic compounds Chemical class 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 2
- 239000000758 substrate Substances 0.000 abstract description 28
- 229910052594 sapphire Inorganic materials 0.000 abstract description 26
- 239000010980 sapphire Substances 0.000 abstract description 26
- 239000002019 doping agent Substances 0.000 abstract description 13
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 abstract description 12
- 238000000034 method Methods 0.000 abstract description 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 abstract description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 abstract description 2
- 239000010453 quartz Substances 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 7
- 239000010408 film Substances 0.000 description 6
- 239000000376 reactant Substances 0.000 description 5
- 239000012159 carrier gas Substances 0.000 description 4
- 238000010438 heat treatment Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000004140 cleaning Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 239000012808 vapor phase Substances 0.000 description 2
- 229910018229 Al—Ga Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000001000 micrograph Methods 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 238000005424 photoluminescence Methods 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 238000000927 vapour-phase epitaxy Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Landscapes
- Led Devices (AREA)
Abstract
Description
本発明はＩ型の窒化ガリウム系化合物半導体の結晶性を
改善した気相成長装置に関する。The present invention relates to a vapor phase growth apparatus that improves the crystallinity of I-type gallium nitride compound semiconductors.
従来、有機金属化合物気相成長法（以下「ＭＯＶＰＥＪ
と記す）を用いて、窒化ガリウム系化合物半導体（Ａ
ＩＩ Ｘ Ｇ ａ ＋−ｗ Ｎ ；Ｘ＝Ｏを含む）薄膜
をサファイア基板上に気相成長させることが研究されて
いる。
この方法は、第３図に示すような気相成長装置を用いて
実施される。その気相成長装置において、石英反応管７
にはマニホールド６が接続されており、そのマニホール
ド６には、ＮＨ，の供給系統ＡとＮ２、Ｎ２の供給系統
Ｂと、有機金属化合物ガスのトリメチルガリウム（以下
ｒＴＭＧＪと記す）の供給系統Ｃと、有機金属化合物ガ
スのトリメチルアルミニウム（以下ｒＴＭＡＪと記す）
の供給系統りと、ドーピング元素を含む反応ガス（以下
単に「ドーパントガス」という）であるジエチル亜鉛（
以下ｒＤＥＺＪと記す）の供給系統Ｅとが接続されてい
る。また、石英反応管７の中には、高周波加熱用グラフ
ァイトサセプタ９が配設されており、そのサセプタ９上
にはサファイア基板１０が載置されており、そのサファ
イア基板１０は、高周波コイル８により加熱される。各
反応ガス及びキャリアガスは各供給系統からマニホール
ド６で混合され、その混合ガスが石英反応管７に導かれ
サファイア基板１０に吹き付けられることによりサファ
イア基板１０上にＡＡｘＧａ＋−ＸＮの薄膜が成長する
。
そして、各有機金属化合物ガスの混合比を変化させるこ
とにより、組成比を変化させたり、亜鉛をドープしてＴ
型のＡｌｘＧａ＋−ＸＮの薄膜を形成することができる
。Conventionally, organometallic compound vapor phase epitaxy (hereinafter referred to as "MOVPEJ")
) using a gallium nitride-based compound semiconductor (A
Research has been conducted on vapor phase growth of thin films (II x G a + - w N ; containing X=O) on sapphire substrates. This method is carried out using a vapor phase growth apparatus as shown in FIG. In the vapor phase growth apparatus, a quartz reaction tube 7
A manifold 6 is connected to the manifold 6, and the manifold 6 has a supply system A for NH, a supply system B for N2 and N2, and a supply system C for trimethyl gallium (hereinafter referred to as rTMGJ), an organometallic compound gas. , organometallic compound gas trimethylaluminum (hereinafter referred to as rTMAJ)
diethylzinc (hereinafter simply referred to as "dopant gas"), which is a reactive gas containing a doping element (hereinafter simply referred to as "dopant gas").
A supply system E (hereinafter referred to as rDEZJ) is connected. Furthermore, a graphite susceptor 9 for high-frequency heating is disposed inside the quartz reaction tube 7 , and a sapphire substrate 10 is placed on the susceptor 9 . heated. Reaction gases and carrier gases are mixed in a manifold 6 from each supply system, and the mixed gas is led to a quartz reaction tube 7 and blown onto a sapphire substrate 10, thereby growing a thin film of AAxGa+-XN on the sapphire substrate 10. Then, by changing the mixing ratio of each organometallic compound gas, the composition ratio can be changed, or by doping with zinc, T
A thin film of type AlxGa+-XN can be formed.
【発明が解決しようとする問題点】
このように従来の装置では、ＤＥＺのドーパントガスと
ＴＭＧ、ＴＭＡ等の他の反応ガスは、石英反応管７に入
る前のマニホールド６で混合されていた。ところが、Ｔ
ＭＧとＤＥＺは室温で反応性が高いため、サファイア基
板１０から離れたところで予め両ガスが混合されると、
ＤＥＺとＮＨ３の反応が進行し、サファイア基板１０上
に成長するＩ型のＡＡｘＧａ＋−ＸＮの結晶性が良くな
いことが実験により分かった。
即ち、反応性の高いドーパントガスはサファイア基板１
０の付近で他の反応ガスと混合し、ＡｌｘＧａ＋−ＸＮ
が成長する過程でドーパントガスを分解し、ドーピング
元素をその成長するＡＡ、Ｇａ＋−ＸＮ中にドープする
と結晶性の高い薄膜が得られるという結論が得られた。
本発明は係る結論に基づいてなされたものであり、その
目的とするところは、結晶性の高いＩ型のＡｊ！ｘＧａ
＋−ＸＮの薄膜を得ることである。Problems to be Solved by the Invention As described above, in the conventional apparatus, the DEZ dopant gas and other reactive gases such as TMG and TMA were mixed in the manifold 6 before entering the quartz reaction tube 7. However, T
Since MG and DEZ are highly reactive at room temperature, if the two gases are mixed in advance away from the sapphire substrate 10,
It was found through experiments that the reaction between DEZ and NH3 progressed, and that the crystallinity of type I AAxGa+-XN grown on the sapphire substrate 10 was poor. That is, the highly reactive dopant gas is
AlxGa+-XN is mixed with other reaction gases near 0.
It was concluded that a highly crystalline thin film can be obtained by decomposing the dopant gas during the growth process and doping the doping element into the growing AA, Ga+-XN. The present invention was made based on such a conclusion, and its purpose is to obtain Aj! of type I with high crystallinity. xGa
The objective is to obtain a thin film of +-XN.
上記問題点を解決するための発明の構成は、有機金属化
合物ガスを用いた窒化ガリウム系化合物半導体（Ａ４２
ｘ Ｇａ、−ＸＮ ；Ｘ＝０を含む）薄膜の気相成長装
置において、ＡｌｘＧａ＋−ＸＮを成長させる反応ガス
を反応室に導く第１反応ガス管と、ドーピング元素を含
む反応ガスを反応室に導く第２反応ガス管と、それらの
両反応ガス管の先端部に連設しそれらの両反応ガス管に
より導かれた両反応ガスを混合してサセプタの付近に設
けられた開口部からサセプタに流出させる混合管とを設
けたことである。The structure of the invention for solving the above problems is based on a gallium nitride-based compound semiconductor (A42
In a thin film vapor phase growth apparatus (including xGa, -XN; A second reaction gas pipe is connected to the tips of the two reaction gas pipes, and the two reaction gases guided by the two reaction gas pipes are mixed and supplied to the susceptor through an opening provided near the susceptor. The reason is that a mixing pipe for discharging the water is provided.
第１反応ガス管と第２反応ガス管の先端部は、反応室に
設けられたサセプタの付近で開口する混合管に連設して
いる。そして、その両反応ガス管はドーパントガスと他
の反応ガスとを混合管まで分離して導いており、ドーパ
ントガスと他の反応ガスは混合管にて初めて混合される
。その混合管はサセプタの近辺に位置しており、その開
口部からサセプタに向かって混合ガスが吹き付けられる
。
そして、基板付近でドーパントガスは熱分解され、ドー
ピング元素が気相成長するＡＡ！ｘＧａ＋−ＸＮ薄膜中
にドーピングされ、結晶性の良い■型のＡｊ２ｘＧａ＋
−ＸＮ薄膜が得られる。The tips of the first reaction gas tube and the second reaction gas tube are connected to a mixing tube that opens near a susceptor provided in the reaction chamber. Both reaction gas tubes separately guide the dopant gas and other reaction gases to the mixing tube, and the dopant gas and other reaction gases are mixed for the first time in the mixing tube. The mixing tube is located near the susceptor, and the mixed gas is blown toward the susceptor from its opening. Then, the dopant gas is thermally decomposed near the substrate, and the doping element grows in a vapor phase.AA! ■-type Aj2xGa+ with good crystallinity doped into xGa+-XN thin film
-XN thin film is obtained.
以下、本発明を具体的な実施例に基づいて説明する。第
１図は本発明の具体的な一実施例に係る気相成長装置の
構成を示した断面図である。石英反応管２１で囲われた
反応室２ｏでは、サセプタ２２が操作棒２３に支持され
ており、そのサセプタ２２は操作棒２３によって位置の
調整が行われる。また、サセプタ２２の主面にはサファ
イア基板２４が配設されている。尚、８は高周波コイル
であり、サファイア基板２４を加熱するためのものであ
る。
一方、反応室２０のガスの流入側には、第１反応ガス管
２５と第２反応ガス管２６とが配設されている。第１反
応ガス管２５は第２反応ガス管２６と同心状に、第２反
応ガス管２６の内部に配設されている。そして、第１反
応ガス管２５と第２反応ガス管２６の先端部は球状の混
合管２９に連設している。混合管２９の開口部２９ａは
サファイア基板２４に向かって開口しており、開口部２
９ａとサファイア基板２４との間隔は１０〜６０ｍｍに
制御棒２３によって調整される。
また、第１反応ガス管２５は第１７二ホールド２７に接
続され、第２反応ガス管２６は第２マニホールド２８に
接続されている。そして、第１マニホールド２７にはＮ
Ｈｓの供給系統Ｈとキャリアガスの供給系統工とＴＭＧ
の供給系統ＪとＴＭＡの供給系統にとが接続され、第２
マニホールド２８にはキャリアガスの供給系統ＩとＤＥ
Ｚの供給系統りとが接続されている。
このような装置構成により、第１反応ガス管２５から、
ＮＨ，とＴＭＧとＴＭＡとＨ７との混合ガスが混合管２
９に流出し、第２反応ガス管２６から、ＤＥＺとＨ３と
の混合ガスが混合管２９に流出する。そして、両系統の
反応ガスは混合管２９で混合された後、その開口部２９
ａからサファイア基板２４に吹き付けられる。このとき
、混合管２９内では、渦流を生じ、両系統の反応ガスが
良く混合される。
Ｎ型のＡｌＸＧａ＋−ｘ Ｎ薄膜を形成する場合には、
第１反応ガス管２５だけから混合ガスを流出させれば良
く、■型のΔ１ｘＧａｌ−ＸＮ薄膜を形成する場合には
、第１反応ガス管２５と第２反応ガス管２６とからそれ
ぞれの混合ガスを流出させれば良い。■型のＡｌうＧａ
１−ＸＮ＃膜を形成する場合には、ドーパントガスであ
るＤＥＺは第１反応ガス管２５から流出する反応ガスと
混合管２９内で初めて混合されることになる。そして、
ＤＥＺはサファイア基板２４に吹き付けられ熱分解し、
ドーパント元素は成長するＡｌｘＧａ＋−ＸＮにドーピ
ングされて、■型のΔβｘＧａ＋−ＸＮが得られる。こ
の場合、第１反応ガス管２５と第２反応ガス管２６とで
分離して、反応ガスとドーパントガスがサファイア基板
２４の付近の混合管２９まで導かれるので、従来装置で
生じるガスの導入管におけるＤＥＺと、Ｔ Ｍ Ｇ又は
ＴＭＡとの反応が抑制されるため、良好なドーピングが
行われる。
尚、サセプタ２２の反応ガスの流れる方向Ｘに対する傾
斜角θは、４５度に構成されている。このように傾斜さ
せることにより、サセプタ２２をガス流に対し直角に構
成した場合に比べて良好な結晶が得られた。
この気相成長装置で得られたＩ型のＡ ＩＩ Ｘ Ｇ
ａ＋−ｘ Ｎは、顕微鏡写真、Ｘ線のロッキングカーブ
、フォトルミネッセンス測定により、従来の気相成長装
置で成長したものに比べ、良質な結晶性を示すことが確
認された。
尚、上記実施例では、混合管２９を球状に構成している
が、この形状には限定されない。また、８箪形状に混合
室を２つ設ければ、反応ガスの混合性が更に良くなる。
次に本装置を用いて、第２図に示す構成の発光ダイオー
ドを作成する方法について説明する。
まず、有機洗浄及び熱処理により洗浄した（０００１）
面を主面とする単結晶のサファイア基板２４をサセプタ
２２に装着する。次に、Ｈ２を０．３１７分で、第１反
応ガス管２５及び′ｓ２反応ガス管２６から混合管２９
を介して反応室２０に流しながら温度１１００℃でサフ
ァイア基板２４を気相エツチングした。次に温度を９５
０℃まで低下させて、第１反応ガス管２５からＨ２を３
１７分、ＮＨｓを２１１／分、ＴＭＡを７Ｘ １０−’
モル／分で供給して１分間熱処理した。この熱処理によ
りＡＩＮのバッファ層３０が約０．１μｓの厚さに形成
された。１分経過した時にＴＭＡの供給を停止して、サ
ファイア基板２４の温度を９７０℃に保持し、第反応ガ
ス管２５からＨ７を２．５１／分、ＮＨ，を１．５β／
分、ＴＭＧを１．７Ｘ １０−’モル／分で６０分間供
給し、膜厚約７−のＮ型の°ＧａＮから成るＮ層３１を
形成した。次に、そのサファイア基板２４を反応室２０
から取り出し、ホトエツチング及びスパッタリング等に
より膜厚１００人程鹿の５１０２膜３２をパターン形成
した。その後、このサファイア基板２４を洗浄後、再度
、サセプタ２２に装着し気相エツチングした後、サファ
イア基板２４の温度を９７０℃に保持し、第１反応ガス
管２５からは、Ｈ３を２．５１７分、ＮＨ，を１．５１
／分、ＴＭＧを１．７Ｘ １０−’モル／分供給し、第
２反応ガス管２６からは、ＤＥＺを５Ｘ １０−’モル
／分で５分間供給して、■型のＧａＮから戊る１層３３
を膜厚１．０μｓに形成した。この時、ＧａＮの露出し
ている部分は、単結晶の■型のＧａＮが戊長し１層３３
が得られるが、ＳｉＯ□膜３２膜上２には多結晶のＧａ
Ｎから成る導電層３４が形成される。
その後、反応室２０からサファイア基板２４を取り出し
、１層３３と導電層３４の上にアルミニウム電極３５．
３６を蒸着し、サファイア基板２４を所定の大きさにカ
ッティングして発光ダイオードを形成した。この場合、
電極３５は１層３３の電極となり、電極３６は導電層３
４と極めて薄いＳｉＱ、膜３２を介してＮ層３１の電極
となる。
そして、１層３３をＮ層３１に対し正電位とすることに
より、接合面から光が発光する。
また、ＡｌＸＧａ１−ＸＮ系の発光ダイオードを形成す
るには、Ｎ層３１と１層３３とを形成する場合に、第１
反応管２５からＴＭＡを所定割合で流せば良い。例えば
、サファイア基板２４の温度を１１０５℃に保持し、第
１反応ガス管２５からＨ２を３Ａ／分、Ｎ Ｈａを２１
／分、ＴＭＡを７．２×１０−６モル／分、ＴＭＧを１
．７Ｘ １０−’モル／分で供給し、第２反応ガス管２
６からＤＥＺを５Ｘ １０−’モル／分で供給すること
より、Ｘ＝０．３の■型のＡｌＸＧａ１−ＸＮ系半導体
薄膜が得られる。The present invention will be described below based on specific examples. FIG. 1 is a sectional view showing the configuration of a vapor phase growth apparatus according to a specific embodiment of the present invention. In the reaction chamber 2o surrounded by the quartz reaction tube 21, a susceptor 22 is supported by an operating rod 23, and the position of the susceptor 22 is adjusted by the operating rod 23. Further, a sapphire substrate 24 is disposed on the main surface of the susceptor 22. Note that 8 is a high frequency coil for heating the sapphire substrate 24. On the other hand, on the gas inflow side of the reaction chamber 20, a first reaction gas pipe 25 and a second reaction gas pipe 26 are arranged. The first reaction gas pipe 25 is arranged concentrically with the second reaction gas pipe 26 inside the second reaction gas pipe 26 . The tips of the first reaction gas pipe 25 and the second reaction gas pipe 26 are connected to a spherical mixing pipe 29 . The opening 29a of the mixing tube 29 opens toward the sapphire substrate 24, and the opening 29a opens toward the sapphire substrate 24.
The distance between 9a and the sapphire substrate 24 is adjusted to 10 to 60 mm by the control rod 23. Further, the first reaction gas pipe 25 is connected to a seventeenth second hold 27, and the second reaction gas pipe 26 is connected to a second manifold 28. Then, the first manifold 27 has N
Hs supply system H and carrier gas supply system engineering and TMG
The supply system J of TMA is connected to the supply system J of TMA, and the second
The manifold 28 has carrier gas supply systems I and DE.
It is connected to the Z supply system. With such an apparatus configuration, from the first reaction gas pipe 25,
A mixed gas of NH, TMG, TMA, and H7 is mixed in the mixing tube 2.
A mixed gas of DEZ and H3 flows out from the second reaction gas pipe 26 to the mixing pipe 29 . After the reaction gases of both systems are mixed in the mixing tube 29, the opening 29
It is sprayed onto the sapphire substrate 24 from a. At this time, a vortex is generated in the mixing tube 29, and the reaction gases of both systems are well mixed. When forming an N-type AlXGa+-xN thin film,
It is sufficient to flow out the mixed gas only from the first reaction gas pipe 25, and in the case of forming a type Δ1xGal-XN thin film, the mixed gas flows from the first reaction gas pipe 25 and the second reaction gas pipe 26, respectively. All you have to do is let it flow out. ■Type of Al-Ga
When forming a 1-XN# film, the dopant gas DEZ is first mixed with the reaction gas flowing out from the first reaction gas pipe 25 in the mixing pipe 29. and,
DEZ is sprayed onto the sapphire substrate 24 and thermally decomposed,
The dopant element is doped into the growing AlxGa+-XN to obtain a ■-type ΔβxGa+-XN. In this case, the first reactant gas pipe 25 and the second reactant gas pipe 26 separate the reactant gas and the dopant gas, and the reactant gas and dopant gas are led to the mixing pipe 29 near the sapphire substrate 24. Since the reaction between DEZ and TMG or TMA is suppressed, good doping is achieved. Incidentally, the inclination angle θ of the susceptor 22 with respect to the flow direction X of the reaction gas is set to 45 degrees. By tilting the susceptor 22 in this manner, better crystals were obtained than when the susceptor 22 was configured perpendicular to the gas flow. Type I A II X G obtained with this vapor phase growth apparatus
It was confirmed by micrographs, X-ray rocking curves, and photoluminescence measurements that a+-x N exhibits better crystallinity than that grown using a conventional vapor phase growth apparatus. In the above embodiment, the mixing tube 29 has a spherical shape, but it is not limited to this shape. Moreover, if two mixing chambers are provided in the shape of an octagon, the mixing properties of the reaction gases will be further improved. Next, a method for producing a light emitting diode having the configuration shown in FIG. 2 using this apparatus will be described. First, it was cleaned by organic cleaning and heat treatment (0001)
A single-crystal sapphire substrate 24 having a main surface is attached to the susceptor 22. Next, H2 was added for 0.317 minutes from the first reaction gas pipe 25 and 's2 reaction gas pipe 26 to the mixing pipe 29.
The sapphire substrate 24 was subjected to vapor phase etching at a temperature of 1100° C. while flowing into the reaction chamber 20 through the gas. Then set the temperature to 95
The temperature is lowered to 0°C, and 3 H2 is supplied from the first reaction gas pipe 25.
17 min, NHs 211/min, TMA 7X 10-'
It was supplied at a rate of mol/min and heat-treated for 1 minute. Through this heat treatment, the AIN buffer layer 30 was formed to a thickness of about 0.1 μs. When 1 minute has elapsed, the supply of TMA is stopped, the temperature of the sapphire substrate 24 is maintained at 970°C, and H7 is supplied from the first reaction gas pipe 25 at 2.51/min and NH at 1.5β/min.
TMG was supplied for 60 minutes at a rate of 1.7×10 mol/min to form an N layer 31 made of N-type GaN with a thickness of about 7 mol/min. Next, the sapphire substrate 24 is placed in the reaction chamber 20.
A 5102 film 32 with a thickness of about 100 layers was formed by photo-etching, sputtering, etc. Thereafter, after cleaning this sapphire substrate 24, it was mounted on the susceptor 22 again and subjected to gas phase etching.The temperature of the sapphire substrate 24 was then maintained at 970°C, and H3 was supplied from the first reaction gas pipe 25 for 2.517 minutes. , NH, is 1.51
/min, TMG is supplied at 1.7X 10-' mol/min, DEZ is supplied from the second reaction gas pipe 26 at 5X 10-' mol/min for 5 minutes, and 1. layer 33
was formed to a film thickness of 1.0 μs. At this time, in the exposed part of GaN, the single-crystal ■-type GaN is elongated and becomes one layer 33.
However, polycrystalline Ga is formed on the SiO□ film 32.
A conductive layer 34 made of N is formed. After that, the sapphire substrate 24 is taken out from the reaction chamber 20, and an aluminum electrode 35 is placed on the first layer 33 and the conductive layer 34.
36 was vapor-deposited, and the sapphire substrate 24 was cut into a predetermined size to form a light emitting diode. in this case,
The electrode 35 serves as an electrode for one layer 33, and the electrode 36 serves as an electrode for one layer 33.
4 and becomes an electrode of the N layer 31 via the SiQ film 32. Then, by setting the first layer 33 at a positive potential with respect to the N layer 31, light is emitted from the bonded surface. In addition, in order to form an AlXGa1-XN-based light emitting diode, when forming the N layer 31 and the first layer 33, the first
TMA may be flowed from the reaction tube 25 at a predetermined ratio. For example, the temperature of the sapphire substrate 24 is maintained at 1105° C., H2 is supplied from the first reaction gas pipe 25 at 3 A/min, and N Ha is supplied at 21
/min, TMA 7.2 x 10-6 mol/min, TMG 1
．． 7X 10-' mol/min, second reactant gas tube 2
By supplying DEZ from 6 to 5×10 −' mol/min, a ■-type AlXGa1-XN semiconductor thin film with X=0.3 is obtained.
本発明はＡＡ、Ｇａ、−、Ｎを成長させる反応ガスを反
応室に導く第１反応ガス管と、ドーピング元素を含む反
応ガスを反応室に導く第２反応ガス管と、それらの両反
応ガス管の先端部に連設しそれらの両反応ガス管により
導かれた両反応ガスを混合してサセプタの付近に設けら
れた開口部からその混合ガスをサセプタに吹き付ける混
合管とを有しているので、ドーピング元素を含む反応ガ
スは他の反応ガスと反応することなく、基板付近まで導
くことができしかも混合管で均一に混合されるので、良
質のｌ型のＡｌＸＧａ１−ＸＮ薄膜を成長させることが
できる。The present invention provides a first reaction gas pipe for introducing a reaction gas for growing AA, Ga, -, and N into a reaction chamber, a second reaction gas pipe for introducing a reaction gas containing a doping element into the reaction chamber, and both of these reaction gases. It has a mixing tube that is connected to the tip of the tube, mixes the two reaction gases guided by the two reaction gas tubes, and sprays the mixed gas onto the susceptor from an opening provided near the susceptor. Therefore, the reactive gas containing the doping element can be guided to the vicinity of the substrate without reacting with other reactive gases, and is evenly mixed in the mixing tube, making it possible to grow a high-quality l-type AlXGa1-XN thin film. Can be done.
第１図は本発明の具体的な一実施例に係る気相成長装置
の構成を示した構成図。第２図はその装置で製造される
発光ダイオードの構成を示した構成図。第３図は従来の
気相成長装置の構成を示した構成図である。
？−・−・石英反応管 ８′°°高周波コイル ９・°
゛°°サセプタ０・°サファイア基板 ２０・・反応室
２１−・・−石英反応管 ２２・°°サセプタ ２３
−制御棒２４”・サファイア基板 ２５・・・第１反応
ガス管２６・・°第２反応ガス管 ２７・°″第１マニ
ホールド ２８・・第２マニホールド ２９・・・混合
管 ２９ａ・・・・開口部 ３ｏ・−・・バッファ層
３１・・・Ｎ層３２ ・・５ＩＯ２膜 ３３ ・°Ｉ層
３４・−“導電層３５．３６パ°電極 Ｈ・“Ｎ Ｈ
ｓの供給系統 Ｉ −・キャリアガスの供給系統 Ｊｏ
・・・ＴＭＧの供給系統に−・・ＴＭＡの供給系統 Ｌ
・・・・ＤＥＺの供給系統特許出願人 豊田合成株式
会社
同 名古屋大学長FIG. 1 is a configuration diagram showing the configuration of a vapor phase growth apparatus according to a specific embodiment of the present invention. FIG. 2 is a configuration diagram showing the configuration of a light emitting diode manufactured by the device. FIG. 3 is a block diagram showing the structure of a conventional vapor phase growth apparatus. ? −・−・Quartz reaction tube 8′°°High frequency coil 9・°
゛°°Susceptor 0・°Sapphire substrate 20・・Reaction chamber 21−・・・Quartz reaction tube 22・°°Susceptor 23
- Control rod 24''・Sapphire substrate 25...First reaction gas tube 26...°Second reaction gas tube 27・°''First manifold 28...Second manifold 29...Mixing tube 29a... Opening 3o --- Buffer layer
31...N layer 32...5IO2 film 33 ・°I layer 34 ・-"Conductive layer 35.36P°electrode H・"N H
s supply system I - Carrier gas supply system Jo
...TMG supply system - TMA supply system L
...DEZ supply system patent applicant Toyoda Gosei Co., Ltd. President of Nagoya University
Claims (2)
物半導体（Ａｌ＿ＸＧａ＿１＿−＿ＸＮ；Ｘ＝０を含む
）薄膜の気相成長装置において、 Ａｌ＿ＸＧａ＿１＿−＿ＸＮを成長させる反応ガスを反
応室に導く第１反応ガス管と、ドーピング元素を含む反
応ガスを反応室に導く第２反応ガス管と、それらの両反
応ガス管の先端部に連設しそれらの両反応ガス管により
導かれた両反応ガスを混合してサセプタの付近に設けら
れた開口部からサセプタに流出させる混合管とを有する
ことを特徴とする窒化ガリウム系化合物半導体の気相成
長装置。(1) In a vapor phase growth apparatus for a gallium nitride-based compound semiconductor (Al_XGa_1_-_XN; including X=0) thin film using organometallic compound gas, a first reaction in which a reaction gas for growing Al_XGa_1_-_XN is introduced into a reaction chamber. A gas pipe, a second reaction gas pipe that guides a reaction gas containing a doping element into a reaction chamber, and a second reaction gas pipe that is connected to the tips of both reaction gas pipes and mixes both reaction gases guided by those two reaction gas pipes. What is claimed is: 1. A vapor phase growth apparatus for a gallium nitride-based compound semiconductor, comprising: a mixing tube for causing the mixture to flow into the susceptor from an opening provided near the susceptor.
し１５度〜７５度の範囲で傾斜していることを特徴とす
る特許請求の範囲第１項記載の窒化ガリウム系化合物半
導体の気相成長装置。(2) Vapor phase growth of a gallium nitride-based compound semiconductor according to claim 1, wherein the susceptor is inclined at an angle of 15 degrees to 75 degrees with respect to the flow direction of the reaction gas. Device.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62021125A JPS63188937A (en) | 1987-01-31 | 1987-01-31 | Vapor growth system for gallium nitride compound semiconductor |
| US07/148,633 US4911102A (en) | 1987-01-31 | 1988-01-26 | Process of vapor growth of gallium nitride and its apparatus |
| DE3802732A DE3802732A1 (en) | 1987-01-31 | 1988-01-29 | METHOD AND DEVICE FOR BREEDING GALLIUM NITRIDE FROM THE GAS PHASE |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP62021125A JPS63188937A (en) | 1987-01-31 | 1987-01-31 | Vapor growth system for gallium nitride compound semiconductor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS63188937A true JPS63188937A (en) | 1988-08-04 |
Family
ID=12046166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP62021125A Pending JPS63188937A (en) | 1987-01-31 | 1987-01-31 | Vapor growth system for gallium nitride compound semiconductor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS63188937A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02291114A (en) * | 1989-04-29 | 1990-11-30 | Toyoda Gosei Co Ltd | Vapor growth apparatus for compound semiconductor |
-
1987
- 1987-01-31 JP JP62021125A patent/JPS63188937A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02291114A (en) * | 1989-04-29 | 1990-11-30 | Toyoda Gosei Co Ltd | Vapor growth apparatus for compound semiconductor |
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