JP2001181097A - Vapor growth apparatus of nitride - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a vapor growth apparatus where gallium nitride crystal hardly having defects vapor-grows at a high speed. SOLUTION: This vapor growth apparatus for gallium nitride is assembled as follows: at least two tubes 3 for introducing nitrogen hydride are placed on the end face circumference of the upstream part of a horizontal reactor 2; a reactant gas-introducing tube 4 for feeding a reactant gas for producing a gallium compound by reaction with metallic gallium 16 is connected to a gallium compound-producing part 5 internally having a gallium source placed in the horizontal reactor 2 the central part of the end face; a substrate holder 12 on which a substrate for growing gallium nitride crystal is installed in such a way as to confront the blow-off part 9 of the part 5 is placed; and inside- protecting tubes 14 are installed at least on the inner surface of the reactor on the downstream side of the blow-off part 9 of the part 5 in the reactor.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a nitride vapor phase growth apparatus, and more particularly to a vapor phase growth method capable of growing a thick film having a thickness of several hundreds of μm at a high speed and with good uniformity to obtain a crystal having few defects. It relates to a growth device.

[0002]

2. Description of the Related Art Nitride III-V compound semiconductor crystals are receiving attention as materials for ultraviolet to green light emitting devices, laser devices, and materials for high breakdown voltage and high frequency electronic devices. When fabricating these device structures, it is preferable to use a single crystal of gallium nitride as a substrate, but a bulk gallium nitride crystal is formed from a melt or the like like other compound semiconductor crystals such as GaP and GaAs. Is very difficult to perform, so far metal organic chemical vapor deposition (MOVPE) and hydride vapor deposition (HVP)
An attempt is made to grow a gallium nitride crystal of several μm to several hundred μm in advance on a hetero substrate such as sapphire using a vapor phase growth method such as E) and use this as a substrate to form a device structure thereon. It has been done.

[0003] When a heterogeneous substrate such as a sapphire substrate is used, there is a problem that it is difficult to form a single crystal due to a difference in lattice constant between the sapphire substrate and gallium nitride. AlN on the substrate,
Alternatively, after forming a GaN low-temperature buffer layer, two-stage growth is performed in which gallium nitride is grown at a high temperature. However, the resulting gallium nitride single crystal has many threading dislocations due to the difference between the lattice constant and the thermal expansion coefficient between the sapphire substrate and gallium nitride, which enhances the characteristics and reliability of the light emitting device. In order to reduce the dislocation density, it is extremely important to reduce the dislocation density.

As a method of reducing the dislocation density of a gallium nitride single crystal, the present applicant has provided a silicon dioxide mask on a part of the surface of a gallium nitride single crystal formed by two-step growth, and has performed an ELO (epitaxial lateral overgrowth) process.
h), we propose a method of obtaining high-speed and high-quality products.

[0005] In ELO growth, threading dislocations from the substrate are bent along the mask without propagating into the epitaxial layer due to lateral growth on the mask.
For this reason, when gallium nitride is grown as a thick film by ELO growth, the dislocation density of the upper gallium nitride is reduced by about two to three orders as compared with the lower gallium nitride, and a high-quality crystal with few lattice defects can be obtained. it can. In particular, when ELO growth is performed by the HVPE method having a high growth rate, a high-quality gallium nitride crystal can be obtained in a short time.

FIG. 8 shows a conventional vapor phase growth apparatus using the HVPE method. In a reaction tube 82 of a vapor phase growth apparatus 81, a substrate holder 89 holding a substrate 88, a hydride introduction tube 83 for introducing ammonia, and a reaction between a gas from a reaction gas introduction tube 84 and a gallium source 86 are performed. A gallium compound producing tube 85 for producing a gallium compound is arranged, and a first heating unit 87 for heating a gallium source 86 and a second heating unit 810 for heating a substrate are arranged outside the reaction tube 82.

[0007]

However, in the HVPE method, it is not easy to grow a single crystal on a target substrate with excellent uniformity and reproducibility. For example, gallium nitride is NH ₃ + GaC in the HVPE method.
l → GaN + H ₂ + HCl, but the mixture of NH ₃ and GaCl is not sufficiently performed, and if the thermally activated NH ₃ is not supplied on the substrate, the growth rate of the film thickness is increased. When the distribution is small in the growth apparatus and the distribution occurs in the growth apparatus, there is a problem that the thickness of the obtained gallium nitride becomes uneven. Further, in a vapor phase growth apparatus for nitride crystals such as gallium nitride by the HVPE method, the distribution of hydride of nitrogen supplied as a gas in the reaction tube becomes non-uniform, and further, the chloride of a group III element generated in the reaction tube. However, there is a problem that an efficient growth reaction does not occur due to fluctuations in the amount of methane produced.

[0008] In general, since the growth of nitride occurs in addition to the substrate on which the nitride is grown, the reaction tube and the substrate holder may be damaged by the stress of the precipitate. When nitride precipitates at the outlet of the source gas supply pipe, the flow of the source gas is adversely affected, and uniform growth is difficult. In addition, since the precipitation also occurs on the side surface of the substrate and the back surface of the substrate holding portion, cracks may occur in the entire crystal grown by the stress caused by the precipitate. An object of the present invention is to solve the above problems and to provide a nitride vapor phase growth apparatus for stably growing a uniform nitride single crystal.

[0009]

SUMMARY OF THE INVENTION The present invention provides a reaction tube for growing a nitride crystal by using a hydride of nitrogen and a chloride of a group III element, and a hydride introduction tube for supplying a hydride of nitrogen into the reaction tube. And a group III element chloride generation tube that generates a group III element chloride in the reaction tube and supplies the group III chloride to the reaction tube. Characterized in that the substrate for nitride crystal growth held by the substrate holder is located upstream of the metal source in the chloride generation tube of the above, and is arranged to face the blowing part of the chloride generation tube of the group III element. And

[0010] In the present invention, the inlet of the hydride inlet pipe is I
Arranging the group II element chloride upstream of the metal source in the chloride generation tube allows nitride hydride to diffuse throughout the reaction tube. Further, activation of nitrogen hydride can be promoted from the upstream of the reaction tube by a heating means for heating the metal source. In such a reaction tube, by disposing a substrate holder having a substrate for nitride crystal growth opposite to the blow-out portion of the group III element chloride generation tube, nitrogen hydride and group III element chloride are formed. The mixture of the substances is improved, the uniformity is improved, and the crystallinity is improved by maintaining the composition ratio (stoichiometry) of the crystals.

The position of the inlet of the hydride inlet tube is desirably far from the mixed region of the hydride of nitrogen and the chloride of the group III element, and is located upstream of the metal source, upstream of the heating means, or at the end face of the reaction tube. It is possible to do. If it is arranged at least upstream of the metal source, it can be diffused to almost the entire reaction tube, and the activation of nitrogen hydride can be promoted by means of heating the metal source. Further, by providing a plurality of hydride introduction tubes, it becomes possible to make diffusion of nitrogen hydride in the reaction tube more uniform.

Further, the cross-sectional area of the blow-out portion of the group III element chloride producing tube becomes smaller toward the tip. If the cross-sectional area of the blow-out portion is large, a part of the NH ₃ gas flows back into the inside thereof, and GaN precipitates or NH ₃ is contaminated by the group III source. Further, when the cross-sectional area is small, the blowing speed of the chloride of the group III element increases, the distribution of group III and N becomes uneven on the substrate, and the variation in the grown film thickness increases. As a result of repeated experiments to avoid these inconveniences, a nitride crystal having a uniform film thickness and film quality can be obtained by setting the cross-sectional area of the blowing section to 5 to 30% of the internal cross-sectional area of the reaction tube. Was completed.

Further, in order to simultaneously grow nitride crystals on a plurality of substrates by the growth apparatus of the present invention, a plurality of blowout portions of a group III element chloride generation tube are branched and attached to a substrate holder. The two substrates are arranged so as to face the blowing section. Thereby, a uniform nitride crystal can be grown on a large number of substrates. Also, a plurality of Group III element chloride generation tubes having a metal source therein are provided, and a large number of substrates attached to the substrate holder are arranged in opposition to the blowing section of the Group III element chloride generation tube. A uniform nitride crystal can be grown on a single substrate.

In the present invention, a carbon material or a heat-resistant material coated with silicon carbide is used as a material for the substrate holder and the substrate covering. As a result, precipitation on the back surface of the substrate holding portion and the side surface of the substrate can be prevented, and the occurrence of crystal cracks is suppressed. Furthermore, using a vapor phase growth device,
A mask is provided on a part of the surface of AlxGa1-xN (1 ≦ x ≦ 1) formed on a crystal substrate, and lateral growth parallel to the substrate surface (ELO growth) is performed from an opening of the mask. .

[0015]

FIG. 1 is a sectional view for explaining a vapor phase growth apparatus of the present invention. A hydride introduction tube 3 is attached to the horizontal reaction tube 2, and a hydride of nitrogen such as ammonia is supplied into the reaction tube together with a carrier gas (hydrogen, nitrogen, or the like). As shown in FIG. 1, the hydride introduction port of the hydride introduction pipe 3 is arranged at a position far from the mixing region where the hydride of nitrogen and the gallium compound are mixed. A gallium compound production tube 5 having a gallium source boat 6 installed therein is attached to the horizontal reaction tube 2, and a reaction gas for producing a gallium compound is supplied from the reaction gas introduction tube 4 through the reaction gas introduction tube 4 together with a carrier gas (hydrogen, nitrogen, etc.). Supplied to A first heating means 7 is provided outside the horizontal reaction tube 2 of the gallium source board 6 and has a temperature 7 suitable for producing a gallium compound.
The gallium source boat is heated at 50C to 950C, preferably 800C to 900C. The generated gallium compound is supplied from the blowing section 9 to the mixing area.

The blowing section 9 is provided with a gallium compound producing tube 5.
The cross-sectional area inside gradually decreases toward the blowout portion. The cross-sectional area of the blowing section 9 is 5 to 5 of the cross-sectional area inside the horizontal reaction tube.
Preferably, it is 30%. Gallium compound production tube 5
A baffle plate 8 is provided on the downstream side of the gallium source boat 6 inside the gallium source boat 6, and the blowing section 9
To prevent the ammonia from flowing back and reacting with the gallium metal in the gallium source boat 6. Baffle plate 8
Is adjusted so that the outflow of the gallium compound becomes constant. A substrate 11 on which gallium nitride is to be grown is mounted on a substrate holder 12 and is arranged so as to face the blowing section 9. The substrate holder 12 rotates during growth, and the rotation speed of the substrate holder is preferably set to about 10 rpm. Substrate holder 2 occupying cross-sectional area inside horizontal reaction tube 2
The ratio of the area of 1 is set to 30 to 70%, more preferably 40 to 60%.

Outside the gallium nitride growth region (mixing region) on the downstream side from the tip of the gallium compound generation tube 5 of the horizontal reaction tube, the activation of a nitrogen source such as ammonia is promoted, and the reaction with the gallium compound is promoted. A second heating means 10 for growing gallium nitride is provided, and the second heating means causes the gallium nitride growth region to reach 850 ° C.
Heated to 1050 ° C. The remaining portion of the gas used for the gallium nitride growth reaction in the gallium nitride growth region is discharged from the outlet 13 to the outside.

In the embodiment of the present invention, the hydride introduction port of the hydride introduction pipe 3 is arranged at a position far from the mixing region where the hydride of nitrogen and the gallium compound are mixed. Therefore, the hydride of nitrogen diffuses from the upstream side of the reaction tube to the entire reaction tube. Further, by disposing the inlet upstream of the gallium source boat 6, the first heating means 7 for heating the gallium source boat is heated from the upstream of the reaction tube, and the thermal activity of the hydride of nitrogen is increased. Is further promoted. Thereby, the nitrogen source can be more uniformly and stably supplied to the mixing region as compared with a vapor phase growth apparatus in which the inlet of the hydride introducing tube 3 is arranged near the mixing region. Although the position of the inlet of the hydride inlet tube 3 is located before the gallium source boat 6, the inlet may be at the end face of the horizontal reaction tube 2.

Further, a substrate 1 on which gallium nitride is grown
Numeral 1 is attached to the substrate holder 12 and is arranged to face the blowing section 9. Nitrogen hydride is diffused from the upstream side of the reaction tube to the entire reaction tube, and by arranging the substrate so as to face the blowing section 9, good mixing of the gallium compound and the nitrogen hydride is performed.

The substrate holder 12 is rotated during growth, so that uniform growth within the substrate surface can be achieved. Blowing part 9
Are arranged such that the cross-sectional area in the gallium compound generating tube 5 is gradually reduced and is sufficiently mixed with the surrounding nitrogen source such as ammonia. The cross-sectional area of the blowing section 9 is preferably 5 to 30% of the internal cross-sectional area of the horizontal reaction tube, whereby a sufficient mixed region of the gallium compound and a nitrogen source such as ammonia can be formed.

In the gallium nitride growth region, it is inevitable that gallium nitride is deposited not only on the substrate but also on the tube walls and internal parts in the gallium nitride growth region inside the reactor. However, when the gallium nitride is grown on the surface of the horizontal reaction tube and the quartz generally used as an internal component of the horizontal reaction tube, the quartz may be cracked by the stress generated by the growth of the gallium nitride. Therefore, in the vapor phase growth apparatus of the present invention, the inner surface of the horizontal reaction tube is protected by providing the inner surface protection tube 14 on the inner surface of the horizontal reaction tube, and the deposition on the inner wall of the reaction tube is prevented. In addition, maintenance of the vapor phase growth apparatus is simplified by replacing the inner protective tube 14 with gallium nitride deposited therein and the clean inner protective tube by making the inner protective tube 14 detachable.

Similarly, by attaching the tip protection tube 15 to the outlet 9 of the gallium compound producing tube into the horizontal reaction tube, the gallium compound can be prevented from directly depositing on the outlet 9. The replacement of the tip protection tube 15 can avoid the influence on the blowout portion 9 due to precipitation. Further, in the vapor phase growth apparatus of the present invention, a gallium compound generator is also characterized so as to stably generate a gallium compound.

FIG. 2 is a view for explaining a gallium source boat in a gallium compound producing tube. FIG. 2 (A) is a sectional view, and FIG. 2 (B) shows a partition plate provided on the gallium source boat. . The gallium source boat 6 contains metal gallium 1
6 are housed, and are in a molten state by heating. In the gallium source boat, the partition plate 17 is attached, and the molten metal gallium is in a state of rising due to surface tension inside each region surrounded on all sides by the partition plate 17. By surrounding the four sides with the partition plate 17, the surface of the metal gallium can have a larger surface area than in the case where the partition plate 17 is not provided, and the reaction between the metal gallium and the reaction gas can be further promoted.

Further, the partition plate 17 has a communication portion 18 at a lower portion, so that the height of the surface of the molten metal of gallium in each region surrounded by the partition plate can be made equal, and the partition plate 17 is surrounded by the partition plate. Nonuniformity of the metal gallium in the region can be prevented. In addition, a lid 19 to which the reaction gas introduction pipe 4 such as hydrogen chloride is attached is provided above the gallium source boat 6, and plays a role of increasing the reaction efficiency between the gallium source and the reaction gas.

FIG. 3 is a view for explaining a substrate holder of the vapor phase growth apparatus of the present invention, and FIG.
(B) is a front view of the substrate holder viewed from the substrate surface.
The substrate holder 12 includes a rotation shaft 20 and a substrate holder 21 for mounting the substrate 11. Substrate holder 2
1 is detachable from the rotating shaft 20, and the substrate 11 is attached by a substrate cover 22 which holds the substrate from the periphery in a substrate holder 21 and does not expose the periphery of the substrate to the reactor.

In the present invention, the substrate holder 21 and the substrate cover 22 are made of a carbon material or a carbon material coated with silicon carbide, thereby preventing polycrystalline gallium nitride from depositing on the side and back surfaces of the substrate 11. are doing. This can prevent crystal cracks caused by the stress of the polycrystalline gallium nitride deposited on the back surface of the substrate, and can improve the crystal quality and yield.

FIG. 4 shows another embodiment of the present invention, which differs from the vapor phase growth apparatus shown in FIG. 1 in the number of hydride introduction tubes connected to the reaction tubes and the mounting position. ing. FIG. 4 is a view of the vapor phase growth apparatus viewed from the end face direction of the reaction tube. A gallium compound generator 5 is provided at the center of the reaction tube 2, and a reaction gas introduction tube 4 is provided in the gallium source boat. FIG. 4 (A) shows two gallium compound generation tubes 5 above and below.
FIG. 4B shows an example in which four hydride introduction pipes 3 are connected on a circumference. As described above, by disposing the hydride introduction pipes 3 evenly, the concentration distribution of the hydride acting as a nitrogen source in the reaction tube can be made more uniform.

FIG. 5 is a sectional view for explaining another embodiment of the vapor phase growth apparatus of the present invention. The apparatus shown in FIG. 5 uses the substrate holder 12 having the substrate holder 61 to which a number of substrates can be attached in the vapor phase growth apparatus shown in FIG. Further, a plurality of blow-out portions 9 of the gallium compound generating tube 5 are provided to enable uniform single crystal growth on a plurality of substrates. The apparatus is the same as the apparatus shown in FIG. 1 except for the structure of the substrate holder 12 and the blowing section 9 and the number of hydride introduction pipes. With this apparatus configuration, it is possible to grow uniform gallium nitride on a plurality of substrates.

FIG. 6 is a view for explaining a substrate holder for holding a plurality of substrates in the vapor phase growth apparatus of FIG. FIG. 6A is a front view of the substrate holder viewed from the substrate surface, and FIG. 6B is a cross-sectional view. The substrate holder 12
A rotating shaft 20 rotatably attached to the reactor and a substrate 11
Is mounted on the substrate holder 61. The substrate holder 61 is detachable from the rotating shaft 20 and the substrate 1
1 is attached by a substrate cover 22 which holds the substrate from the periphery in a substrate holder 61 and does not expose the periphery of the substrate to the reactor. In order to explain the correspondence between each substrate and the blow-out part of the gallium compound generation part, the positions of the plurality of tip protection tubes 15 are shown by broken lines.

A plurality of through-holes 71 are provided in the center of the substrate holder 61 to prevent a large area of the substrate holder from obstructing the gas flow inside the reaction tube. Further, in the reaction tube, the gallium compound producing tube is not limited to the one provided at one place, but by providing a plurality of tubes, the concentration of the gallium compound in the reaction tube can be made more uniform.

FIG. 7 is a sectional view for explaining another example of the gallium nitride vapor phase growth apparatus of the present invention. The apparatus shown in FIG. 7 is different from the vapor phase growth apparatus shown in FIG. 1 in that a substrate holder 12 having a substrate holder 61 to which a large number of substrates can be attached.
And an apparatus in which four gallium compound generating tubes 81 are provided. The gallium compound generation tubes 81 are evenly arranged on the circumference, and the blowing portion 9 is provided at the tip of each gallium compound generation tube 81 to enable uniform single crystal growth on a plurality of substrates. This is the same as the device shown in FIG.

In the apparatus shown in FIG. 7, since a plurality of gallium compound producing tubes 5 are provided independently, the gallium compound blowing from each gallium compound producing tube is different from that of the apparatus shown in FIG. The amount can be equalized. In the above description, the horizontal reaction tube placed horizontally is described. However, the same configuration can be applied even when the shape of the reaction tube is vertical.

[0033]

BEST MODE FOR CARRYING OUT THE INVENTION The nitride vapor phase growth apparatus of the present invention is suitable for producing nitrides of Group III of the periodic table, such as aluminum, gallium and indium, or a mixture thereof. In the following description, as an example, the production of a single crystal of gallium nitride will be described with reference to examples below. Example 1 A gallium compound generation unit containing 800 g of metal gallium was provided in a gallium source boat having a partition of 1 cm inside a horizontal quartz reaction tube having an inner diameter of 75 mm, similar to that shown in FIG. . The gallium compound generation part is heated to 750 ° C. by a heating furnace, and the growth region is
Heated to 00 ° C. Hydrogen chloride was introduced into the gallium compound producing section at a flow rate of 50 ml / min and 200 ml / min, respectively, using hydrogen as a carrier gas from a reaction gas introduction pipe. Further, hydrogen was introduced from the hydrogen introduction tube on the outside thereof, and was introduced from a gallium compound blow-out tube having an inner diameter of 20 mm equipped with a quartz protective tube at a linear velocity of 5 cm / sec near the center of the substrate attached to the substrate holder. .

On the other hand, from the end of the reaction tube, ammonia was introduced together with hydrogen in the same direction as the direction in which hydrogen chloride was introduced. The linear velocity of the gas containing ammonia introduced into the mixing zone was 1 cm / sec. (0 mm) with a diameter of 50.8 mm
001) A 1 μm-thick gallium nitride film is formed on a sapphire substrate in advance.
<11-20 for gallium nitride crystals at μm intervals
The sample substrate formed in the direction of
Attached to the substrate holder.

As the substrate holder, a substrate made of carbon and coated with silicon carbide to a thickness of 100 μm was used, and the substrate was covered with a substrate made of the same material as a substrate holder having an opening of 45 mm in size. A sample substrate was attached. The ratio of the substrate holder to the internal cross-sectional area of the reaction tube was 55%. An inner protective tube made of quartz having an inner diameter of 62 mm was provided between the growth region inside the reaction tube and the substrate holder and on the downstream side. The ammonia supply partial pressure is 4.9 × 10
⁴ Pa (5 × 10 ^-1 at), hydrogen chloride partial pressure 9.8 × 10 ²
Gallium nitride was grown on the sample substrate for 3 hours while adjusting the ^{pressure to} Pa (1 × 10 ⁻² at) and rotating the substrate holder at a rotation speed of 10 ppm. The thickness of the obtained gallium nitride single crystal was 300 μm, and no polycrystal was deposited on the peripheral portion and the back surface of the sample substrate, and no substrate crack was generated. The thickness uniformity was within ± 2%, and the dislocation density on the surface was 1 × 10 ⁷ / cm ² .

[0036]

According to the nitride vapor phase growth apparatus of the present invention,
The concentration of the hydride of nitrogen in the reactor was made uniform, and the concentration of the gallium compound generated from the metal gallium was also made uniform, whereby the single crystal could be grown at high speed and uniformity. In addition, since an inner protective tube is used for the inner surface of the reaction tube and a tip protective tube is also provided at a blowing part of a gallium compound generated from metal gallium, problems such as breakage of the reaction tube due to abnormal growth of gallium nitride are prevented. be able to. Further, since a carbon material or a heat-resistant material coated with silicon carbide is used as a holder for a substrate on which a gallium nitride single crystal is grown, the amount of gallium nitride deposited on the substrate holder can be reduced.

[Brief description of the drawings]

FIG. 1 is a sectional view illustrating a gallium nitride vapor phase growth apparatus of the present invention.

FIG. 2 is a diagram illustrating a gallium source boat in a gallium compound generation unit.

FIG. 3 is a diagram illustrating a substrate holder of the vapor phase growth apparatus of the present invention.

FIG. 4 is a view for explaining an example of an attachment position of a hydride introduction pipe on an end face to a horizontal reaction tube of a vapor phase growth apparatus.

FIG. 5 is a cross-sectional view illustrating another example of the gallium nitride vapor phase growth apparatus of the present invention.

FIG. 6 is a view for explaining a substrate holder for holding a plurality of substrates in the vapor phase growth apparatus of the present invention.

FIG. 7 is a diagram illustrating another example of the gallium nitride vapor phase growth apparatus of the present invention.

FIG. 8 is a diagram illustrating an example of a conventional vapor phase growth apparatus.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 ... Vapor phase growth apparatus 2 ... Horizontal reaction tube 3 ... Hydride introduction tube 4 ... Reaction gas introduction tube 5 ... Gallium compound production tube 6 ... Gallium source boat 7 ... First heating means 8 ... Baffle plate 9 ... Blow-out part 10 ... second heating means 11 ... substrate 12 ... substrate holder 13 ... discharge port 14 ... inner protective tube 15 ... tip protective tube 16 ... metal gallium 17 ... partition plate 18 ... communication part 19 ... cover 20 ... rotary shaft 21 ... substrate Holder 22 ... Substrate cover 30 ... Tube wall 31 ... Hydride introduction tube 41 ... Reaction gas introduction tube 51 ... Gallium compound generation tube 61 ... Substrate holder 71 ... Through hole 81 ... Vapor growth apparatus 82 ... Reaction tube 83 ... Hydrogen Compound introduction tube 84 ... Reaction gas introduction tube 85 ... Gallium compound production tube 86 ... Gallium source 87 ... First heating means 88 ... Substrate 89 ... Substrate holder 810 ... Second heating means 811 ... Exhaust Mouth

 ────────────────────────────────────────────────── ─── Continuing on the front page (72) Inventor Naotaka Kuroda F-term (reference) 4G077 AA03 BE15 DB05 DB11 EG03 EG04 EG22 TB03 TC01 TC19 at 5-7-1 Shiba, Minato-ku, Tokyo

Claims (12)

[Claims] 1. A reaction tube for growing a nitride crystal by using a hydride of nitrogen and a halide of a group III element, a hydride introduction tube for supplying the hydride of nitrogen into the reaction tube, and a hydride introduction tube provided in the reaction tube. And a means for generating a group III element chloride and supplying the group III element halide to the reaction tube, wherein the opening end of the hydride introduction tube in the reaction tube is provided. And the I
It is arranged upstream from the blowing part of the halide generating means of the group II element, and the substrate for nitride crystal growth held by the substrate holder is opposed to the blowing part of the halide generating means of the group III element. An apparatus for vapor-phase growth of nitride, wherein the apparatus is arranged. 2. The nitride vapor phase growth apparatus according to claim 1, wherein an opening end of said hydride introduction tube is arranged upstream of a heating means of a metal source or on an end surface of a reaction tube. 3. The apparatus for growing a nitride vapor phase according to claim 1, wherein a plurality of said hydride introduction pipes are provided. 4. The nitride gas phase according to claim 1, wherein a cross-sectional area of the blow-out portion of said group III element halide generating means decreases toward the tip. Growth equipment. 5. A cross-sectional area of the blow-out section is set to 5 to 30% of a cross-sectional area inside the reaction tube.
An apparatus for vapor-phase growth of a nitride according to the above. 6. The blow-off portion of the means for generating a halide of a group III element is branched into a plurality of portions, and a large number of substrates attached to the substrate holder are arranged so as to face the blow-out portion. Item 6. A nitride vapor-phase growth apparatus according to any one of Items 1 to 5. 7. A metal source is provided inside the reaction tube.
2. A method according to claim 1, wherein a plurality of group III element halide generating means are provided, and a plurality of substrates attached to said substrate holder are arranged so as to face a blowing part of said group III element halide generating means. 6. The apparatus for growing a nitride according to any one of the above items 5 to 5. 8. A metal source boat accommodating a metal source, wherein a partition plate having a communication port through which the surface area of the molten metal is enlarged and through which the molten metal communicates is provided. The nitride vapor phase growth apparatus according to any one of the above. 9. The apparatus according to claim 1, wherein the substrate holder and the substrate cover are made of a carbon material or a heat-resistant material coated with silicon carbide. 10. The reactor according to claim 1, wherein at least a hydride of nitrogen and a halide of a group III element are mixed and an inner protective tube is provided on an inner wall of the reaction tube to be heated. Of nitride vapor phase growth equipment. 11. The nitride gas according to claim 1, wherein a detachable tip protection tube is attached to a blowing portion of the means for generating a halide of a group III element. Phase growth equipment. 12. A mask for a part of the surface of AlxGa1-xN (1.ltoreq.x.ltoreq.1) formed on a crystal substrate using the gallium nitride vapor phase growth apparatus according to any one of claims 1 to 11. Characterized by performing lateral growth (ELO growth) parallel to the substrate surface from the opening of the mask.