KR20200015157A - Apparatus and method for forming a nitride coating layer - Google Patents

Abstract

According to the present invention, an apparatus for forming a nitride coating film comprises: a reaction pipe; at least one raw material part disposed in the reaction pipe for a metal raw material to be mounted thereon; a reaction gas supply pipe configured to supply halogenation reaction gas to the raw material part; an object mounting part disposed in the reaction pipe for at least one object to be mounted thereon; a nitration reaction gas supply pipe configured to supply nitration reaction gas to the object mounting part; and a heating part configured to heat the reaction pipe. The heating part performs the heating at a temperature range of 900-1120°C.

Description

Apparatus and method for forming a nitride coating layer

The present invention relates to a nitride coating film and an apparatus and method for manufacturing the same, and more particularly, to a device and a method for producing a nitride coating film at an improved rate using a hydrogen vapor growth (HVPE) method.

Various thin film deposition equipment and etching equipment are used in integrated semiconductor devices and display manufacturing process equipment such as LCD and PDP. Since the cleaning and etching equipment of the thin film deposition equipment uses an etching gas containing an element of F or Cl, a ceramic coating is applied to the surface of a ceramic material having excellent wear resistance and corrosion resistance to protect internal components.

Such ceramic coating is mainly used for plasma spraying. Plasma spray coating injects a gas such as Ar between the anode and the cathode disposed inside the plasma gun and applies a high voltage to generate a high temperature plasma flame of 500 to 1500 ° C., and injects the powder of the material to be coated into the plasma flame. By melting a part or all of the powder particles to spray on the surface of the base material at high speed to obtain a coating film.

However, in the case of the plasma spray coating, the coating equipment is expensive, and there are many process factors to be managed, and the air in the atmosphere is mixed with the plasma flame by the process under atmospheric pressure, resulting in high porosity and weak adhesion rate. There are disadvantages.

The present invention has been made to solve the above disadvantages, it is an object of the present invention to provide a nitride coating film forming apparatus and method produced by the HVPE method.

It is another object of the present invention to provide a nitride coating film forming apparatus and method which can be used in semiconductor deposition equipment or etching equipment in a simple and low cost method.

Still another object of the present invention is to provide a high quality thick film nitride coating film forming apparatus and method capable of adjusting the thickness of the nitride coating film to be formed by increasing the coating film formation speed.

Still another object of the present invention is to provide a nitride coating film forming apparatus and method which can obtain a high formation rate using AlCl, which is a metal chloride gas, which has not been used in the past.

It is still another object of the present invention to provide a nitride coating film forming apparatus and method capable of simultaneously forming a coating film on one or both surfaces of a plurality of objects to be processed.

In order to achieve these and other objects, the nitride coating film forming apparatus according to an aspect of the present invention comprises a reaction tube; At least one raw material portion disposed in the reaction tube, the metal raw material is mounted; Halogenation reaction gas supply pipe which supplies a halogenation reaction gas to a raw material part; And an object mounting unit disposed in the reaction tube, to which at least one object to be processed is mounted. A nitriding reaction gas supply pipe for supplying a nitriding reaction gas to an object mounting unit; And it consists of a heating unit for heating the reaction tube, the heating unit is heated to a temperature range of 900-1120 ℃ to form a nitride coating film.

At this time, the raw material is made of aluminum and / or gallium in the solid state, the nitride coating film is a nitride which is aluminum nitride or gallium nitride.

In addition, when there are a plurality of raw material portions, each raw material portion may be stacked and arranged in the vertical direction or arranged in the horizontal direction. When the reaction tube is horizontal, it is preferable that the plurality of raw material parts are stacked in the vertical direction, and when the reaction tube is vertical, it is preferable that the plurality of raw material parts are arranged in the horizontal direction.

According to the nitride coating film forming apparatus and method of the present invention, a coating film may be formed on one surface of a plate-shaped object, a coating film may be formed on both surfaces simultaneously, and a plurality of objects may be disposed to form a coating film at the same time. In this case, the plurality of objects may be stacked in the vertical direction or spaced apart in the horizontal direction to be mounted to the object mounting portion.

The nitride coating film forming apparatus of the present invention may include a gas equalizing part disposed between the raw material part and the object mounting part, and the gas homogenizing part is formed of at least one perforated plate.

Preferably, the raw material portion and the object mounting portion are made of graphite.

According to another aspect of the present invention, a method of forming a nitride coating film includes disposing a metal raw material on one side of a reaction tube; Placing an object in proximity to the metal raw material; Heating the metal raw material and the object to a temperature in the range of 900-1120 ° C .; Supplying a halogenated reaction gas to a metal raw material; Supplying a nitriding reaction gas to an object; Reacting the metal raw material with the halogenated reaction gas to generate a metal chloride gas; And forming a nitride coating film on the object by reacting the generated metal chloride gas and the nitriding reaction gas.

At this time, the metal chloride gas generated in the step of reacting the metal raw material and the halogenated reaction gas to generate a metal chloride gas is AlCl, the thickness of the coating film formed on the object is proportional to the coating formation time, heating the metal raw material and the object As for the stabilization temperature, 1050 degreeC is preferable.

According to the nitride coating film forming apparatus and method of the present invention, the nitride coating film can be formed by using the HVPE method, it is possible to improve the coating film formation rate and form a thick film coating film. According to the nitride coating film forming apparatus and method of the present invention, since the nitride coating film is coated at a high speed, the nitride coating film of the thick film can be easily formed, and the thickness of the nitride coating film layer is also easy to control.

In addition, the present invention can obtain a high coating film formation rate using AlCl, a metal chloride gas that is not used in the conventional HVPE method, it is possible to form a solid coating film on the object to be treated.

Furthermore, the present invention also has the advantage that the nitride coating film can be formed at a simple and low cost compared to the conventional plasma spray coating method.

In addition, the present invention is more useful because a coating film can be simultaneously formed on one or both surfaces of a plurality of objects to be processed. That is, according to the nitride coating film forming apparatus and method of the present invention can form a coating film on one surface of the plate-shaped object, can form a coating film on both surfaces at the same time, it is also possible to form a coating film by placing a plurality of objects at the same time have.

1 is a view showing a nitride coating film forming apparatus according to a first embodiment of the present invention,
2 is a view showing an example of a reaction boat of the embodiment of FIG.
3 is a view showing a nitride coating film forming apparatus according to a second embodiment of the present invention,
4 is a view showing a nitride coating film forming apparatus according to a third embodiment of the present invention,
5 is a partial pressure graph according to the temperature of a metal chloride gas generated when a halogenated reaction gas contacts aluminum and gallium,
6 is a photograph of an AlN coating film formed on a surface of a quartz wafer.

Hereinafter, the present invention will be described in detail with reference to the accompanying drawings so that those skilled in the art may easily implement the present invention. Elements denoted by the same reference numerals in the drawings indicate the same element.

1 shows a nitride coating film forming apparatus according to a first embodiment of the present invention. The nitride coating film forming apparatus according to the present invention is a device for forming a nitride coating film by the HVPE method. Referring to FIG. 1, the nitride coating film forming apparatus includes a reaction tube 100, a reaction boat 200 disposed in the reaction tube 100, and a gas supply unit 300 supplying various reaction gases to the reaction boat 200. And a heating unit 400 for heating the inside of the reaction tube 100.

The reaction boat 200 is composed of a raw material unit 210 and an object mounting unit 220, the solid aluminum metal and / or gallium metal is disposed in the raw material unit 210, one or the object in the object mounting unit 220 The above-described target object 240 may be mounted. In the present embodiment, the reaction boat 200 in which the raw material portion 210 and the object mounting portion 220 are integrally disclosed is not limited thereto, and the raw material portion 210 and the object mounting portion 220 are formed to approach each other. Can be arranged.

The target object 240 may be a substrate used in various trays or focus rings used in a semiconductor deposition process and an etching process, but is not limited thereto. In addition, the material to be processed may also be quartz or ceramic, but is not limited thereto.

The object to be treated 240 is spaced apart from the bottom of the object mounting unit 220 by a predetermined height (H), which is to form a coating film on both surfaces of the object to be processed 240 simultaneously.

2 shows an example of a reaction boat. The reaction boat 200 has an approximately rectangular parallelepiped shape, the inside of which is divided into the raw material portion 210 and the object mounting portion 220 by the stepped side wall 206, and the reaction gases are stagnated in the object mounting portion 220. In order to continue the reaction, the bottom of the object mounting unit 220 is preferably formed lower than the bottom of the raw material unit 210. In this case, it is also easier to form a coating film on both sides of the object to be processed 240.

Referring back to FIG. 1, the gas supply unit 300 may include an atmosphere gas supply unit 310 for supplying an atmosphere gas such as nitrogen, a nitride reaction gas supply unit 320 for supplying a nitriding reaction gas such as ammonia (NH ₃ ), And a halogenated reaction gas supply unit 330 for supplying a halogenated reaction gas such as hydrogen chloride (HCl), and each gas supply unit supplies gas to the reaction tube 100 through supply pipes 311, 321, and 331. In FIG. 1, the supply pipes are arranged above and below each other for convenience of illustration, but the present invention is not limited thereto. For the purpose of miniaturization of the reaction tube, the supply pipes are arranged in a plane perpendicular to the ground (for example, in FIG. 2). Of the supply pipes 321 and 331).

The atmosphere gas supply unit 310 supplies the atmosphere gas, for example, nitrogen, to the object mounting portion 220 of the raw material portion 210 of the reaction boat 200 through the atmosphere gas supply pipe 311, thereby reacting the reaction tube 100. ) And the inside of the reaction boat 200 in a nitrogen atmosphere, and the metal chloride gas generated by the metal raw material and the halogenated reaction gas is moved to the object mounting unit 400 to stably move the gas flow in the reaction boat 200. It can be maintained.

Since the halogenated reaction gas supply pipe 331 connected to the halogenated reaction gas supply unit 330 can directly eject the halogenated reaction gas to the metal raw material mounted on the raw material unit 210, it promotes generation of metal chloride.

The nitriding reaction gas supply pipe 321 connected to the nitriding reaction gas supply unit 320 supplies the nitriding reaction gas to the object mounting unit 220. Therefore, the outlet of the nitriding reaction gas supply pipe 321 is preferably disposed near the object mounting portion 220.

The heating unit 400 may heat the entire reaction tube 100, the raw material portion 210 and the object mounting portion 220 of the reaction boat 200 to a temperature range of 900-1120 ° C., preferably 1050 ° C. Heated to. The heating unit 400 may use an RF heater or a furnace heater. The use of the RF heater can reduce the temperature increase time and the temperature cooling time by 3 to 5 times or more to improve the coating time and productivity, and is particularly useful when the reaction boat 200 is made of graphite. Although not shown, if necessary, a cover portion may be formed in the reaction boat 200 to create an environment in which reaction gases easily react, and the cover portion may have an opening for inserting a gas supply pipe. The reaction boat 200 and the lid are preferably made of graphite.

A method of forming a nitride coating film using the nitride coating film forming apparatus according to the present invention will be described.

First, a metal raw material in a solid state is disposed in the raw material unit 210, and one or more objects are mounted in the object mounting unit 220. The metal raw material is aluminum in solid state and / or gallium in solid state.

Specifically, in the case of forming the AlN coating film, the metal raw material uses a raw material in which aluminum in a solid state or aluminum in a solid state and a small amount of gallium are mixed. When using the raw material which mixed the aluminum of a solid state and a small amount of gallium, the mass ratio of aluminum / gallium is 1-70. When forming an AlN coating film, when a small amount of gallium is mixed and used, GaN by gallium functions as a nucleus of an AlN coating film, and can form an AlN coating film more smoothly.

When forming a GaN coating film, the metal raw material uses a gallium of a solid state, and when forming an AlGaN coating film, the metal raw material uses a mixture of gallium and aluminum in a solid state.

Next, the heater 400 is operated to heat the entire reaction boat 200 to a predetermined reaction temperature within the range of 900-1120 ° C. At this time, before raising the temperature of the reaction boat 200, nitrogen, which is an atmospheric gas, is supplied, and a predetermined amount of ammonia, which is a halogen nitride reaction gas, is flown to the object mounting unit 220. Next, when the temperature of the reaction boat 200 is stabilized, hydrogen chloride which is a halogenation reaction gas is flowed into the raw material part 210 to form a metal chloride gas.

In more detail, when Al or Ga, a metal raw material, is reacted with hydrogen chloride, AlCl _n or GaCl, a metal chloride precursor, is produced.

FIG. 5 is a graph showing equilibrium partial pressures of metal-chloride gas and HCl, H ₂ , and N ₂ gas according to temperature when Al and Ga are used as metal raw materials, respectively.

(Source: Dhanaraj, G., Byraoppa, K., & Prasad, V., 2010. Springer Handbook of Crystal Growth. 1st Ed. Springer: Berlin.

Pons, M. et al., 2017.HVPE of aluminum nitride, film evaluation and multiscale modeling of the growth process. Journal of Crystal Growth , 468, pp. 235-240.

Kumagai, Y. et al., 2003. Hydride vapor phase epitaxy of AlN: thermodynamic analysis of aluminum source and its application to growth. Physica Status Solidi C , 0 (7), pp.2498-2501.)

As can be seen in FIG. 5, when Al is used as a metal raw material, the metal chloride precursors are AlCl, AlCl ₂ , AlCl ₃ , (AlCl ₃ ) ₂ , and have a high partial pressure of AlCl ₃ from 500 ° C. to 790 ° C., and 790. Above ℃, the partial pressure of AlCl is absolutely higher than other gases. Therefore, in the present invention, since the temperature of the reaction tube 100 is heated to 900-1120 ° C., preferably 1050 ° C., the partial pressure of AlCl is increased to be the precursor for forming AlN.

Therefore, in the raw material unit 210, the metal chloride gas is generated by the metal raw material 230 and the halogenated reaction gas and transferred to the object mounting unit 230, and the metal chloride gas is supplied by the nitriding reaction gas supply pipe 321. It reacts with ammonia (NH ₃ ) to form a nitride coating film on the surface of the object 240. Nitride semiconductor crystals are formed when the temperature of the object mounting unit 230 is approximately 1120 ° C. or more, but an amorphous nitride coating film is formed in the temperature range of 900 to 1120 ° C. FIG.

In the present invention, since the temperature range of 900 to 1120 ℃ is used as the temperature for forming the amorphous coating film using AlCl, which is a metal chloride precursor, to form the AlN coating film, the heater 400 is the raw material portion 210 and the object. All of the mounting parts 220 may be heated to the same temperature. In the conventional HVPE method, the entire apparatus is complicated, in general, in which the heater controls two heaters separately in order to control the temperature of the raw material portion and the mounting portion separately.

After the reaction, the gases are discharged to the outside of the reaction tube 100, and when a coating film having a target thickness is formed, the supply of the reaction gases is stopped, and the heater 400 is stopped. The coating film formation time may be about 2 to 5 hours, the thickness of the coating film is linearly proportional to the formation time.

6 is a photograph of an AlN coating film formed on a surface of a quartz wafer. Table 1 shows physical properties of AlN and GaN. Nitride nitride semiconductors are mechanical, thermal, and chemically stable, and have high melting point and high strength (bonding force = 280 to 350 N / mm ² ). Stable.

Material AlN GaN Crystal structure wurtzite (HCP) wurtzite (HCP) Lattice constant a = 3.111 Å
c = 4.979 Å a = 3.185 Å
c = 5.185 Å Molar mass 40.99 g / mol 83.73 g / mol Density 3.26 g / cm ³ 6.15 g / cm ³ Melting point 2200 ℃ 2500 ℃ Band gap 6.2 eV, Direct 3.42 eV, Direct Thermal
conductivity 285 W / mK 130 W / mK Coefficient of
thermal expansion Δa / a = 4.2 × 10 ^-6 / K
Δc / c = 5.3 × 10 ^-6 / K Δa / a = 5.59 × 10 ^-6 / K
Δc / c = 3.17 × 10 ^-6 / K Dielectric constant 9.0 (static)
4.77 (high frequency) 8.9 (static)
5.35 (high frequency) Diffusion coefficient 3.3 cm ² / s (electron)
0.3 cm ² / s (hole) 25 cm ² / s (electron)
5 cm ² / s (hole) Critical electric field 3.50 × 10 ⁶ V / cm 16.6 × 10 ⁶ V / cm Electron mobility 300 cm ² / Vs 990-2000 cm ² / Vs

Therefore, AlN or GaN is very good as a good coating material because of its high electrical insulation and high thermal conductivity, and it is excellent in various properties, and it is easy to control the thickness and form adhesion by forming the coating film by HVPE method. Done.

Next, a second embodiment of the present invention will be described with reference to FIG. The apparatus of the second embodiment is the same as the first embodiment, but is an embodiment for simultaneously forming a coating film on the plurality of target objects 240. The plurality of objects to be processed 240 are disposed to be spaced apart from each other at predetermined intervals in the vertical direction. For example, three to-be-processed objects 240 are illustrated, but the number is not limited thereto, and the number may be appropriately selected as necessary.

In order to form a coating film on both sides of the object to be treated 230, a plurality of raw material parts 210 are also arranged in a vertical direction, preferably at a position where the metal chloride gas can be discharged between the respective objects 240. Is formed.

The halogenated reaction gas supply pipe 331 and the nitriding reaction gas supply pipe 321 supply the reaction gas to the respective portions such that the reaction gas is uniformly supplied to the respective raw material portions 210 and the object 240. In FIG. 3, the gas supply unit and the heating unit are not shown.

As in the first embodiment, the metal raw material in the solid state is disposed in the plurality of raw material parts 210, and the plurality of objects 240 are mounted in the object mounting part 220. Next, a heater (not shown) is operated to heat the entire reaction boat 200 to a predetermined reaction temperature within the range 900-1120 ° C. At this time, before raising the temperature of the reaction boat 200, nitrogen, which is an atmospheric gas, is supplied, and a predetermined amount of ammonia, which is a halogen nitride reaction gas, is flown to the object mounting unit 220. Next, when the temperature of the reaction boat 200 is stabilized, hydrogen chloride which is a halogenation reaction gas is flowed into the raw material part 210 to form a metal chloride gas. The metal chloride gas flows uniformly up and down each substrate 240 and reacts with ammonia from the nitriding reaction gas supply pipe 321 to form a nitride coating film on the surface of the substrate.

According to the second embodiment, it is useful because a coating film can be formed on a plurality of objects at the same time.

Next, a third embodiment of the present invention will be described with reference to FIG. If the first embodiment or the second embodiment was a horizontal type in which a cylindrical reaction tube is arranged in the horizontal direction, the third embodiment is a vertical type in which the reaction tube is arranged in the vertical direction. The vertical reaction tube 100 of the third embodiment is also an embodiment for simultaneously forming a coating film on the plurality of target objects 240. The plurality of objects to be treated 240 are mounted in a direction perpendicular to the lower portion of the reaction tube 100 and are spaced apart from each other at predetermined horizontal intervals. Although five target objects 240 are illustrated for illustrative purposes, the present invention is not limited thereto, and the number 240 may be appropriately selected as necessary.

In this case, one or more raw material parts may be disposed in the raw material part 210. In FIG. 4, two raw material parts are spaced apart in the horizontal direction on the upper part of the reaction tube 100.

The halogenated reaction gas supply pipe 331 allows the halogenated reaction gas to be supplied to each of the raw material parts 210.

The gas equalizing part 600 is formed between the raw material part 210 and the object mounting part 220. The gas homogenizer 600 includes a first perforated plate 610 and a second perforated plate 620 provided to be spaced apart from the first perforated plate 610 by a predetermined interval, between the first perforated plate 610 and the second perforated plate 620. A predetermined space is formed in the metal chloride gas and the nitriding reaction gas is uniformly discharged toward the substrate mounting unit 220. Each perforated plate is formed uniformly with fine pores, preferably formed of graphite.

The nitriding reaction gas supply pipe 321 supplies a nitriding reaction gas to a space between the first perforated plate 610 and the second perforated plate 620 of the gas equalizing unit 600, and the nitriding reaction gas supplies the second perforated plate 620. Through the ejection is uniformly discharged toward the substrate mounting portion 220.

In FIG. 4, the gas supply unit and the heating unit are not shown.

As in the first or second embodiment, the metal raw materials in the solid state are disposed in the plurality of raw material portions 210, and the plurality of objects 240 are mounted in the object mounting portion 220. Next, a heater (not shown) is operated to heat the entire reaction tube 100 to a predetermined reaction temperature within the range of 900-1120 ° C.

At this time, before raising the temperature of the reaction tube 100, nitrogen which is an atmospheric gas is supplied, and a fixed amount of ammonia which is a halogen nitride reaction gas is supplied to the object mounting part 220. The nitriding reaction gas is preferably supplied to a space between the first perforated plate 610 and the second perforated plate 620 of the gas homogenizer 600, but is not limited thereto. For example, it may be supplied before the second perforated plate 610 to pass evenly through both the first perforated plate 610 and the second perforated plate 620 toward the substrate 240.

 Next, when the temperature of the reaction tube 100 is stabilized, hydrogen chloride which is a halogenation reaction gas is flowed into the raw material part 210 to form a metal chloride gas. The metal chloride gas is first uniformly supplied to the space of the gas homogenizer 600 through the first perforated plate 610 of the gas homogenizer 600 and secondly uniformly through the second perforated plate 620. )

Therefore, the metal chloride gas and the ammonia passing through the second hole 620 are uniformly injected toward the substrate 240 to react to form a nitride coating film on the surface of each substrate 240 at the same time.

According to the third embodiment, since the coating film can be formed on a plurality of objects at the same time, the coating film formed at the same time can be formed more uniformly since the gases ejected by the gas equalizing unit 600 can be uniformly sprayed. Can be.

According to the nitride coating film forming apparatus and method of the present invention, the nitride coating film can be formed by using the HVPE method, it is possible to improve the coating film formation rate and form a thick film coating film. According to the nitride coating film forming apparatus and method of the present invention, since the nitride coating film is coated at a high speed, the nitride coating film of the thick film can be easily formed, and the thickness of the nitride coating film layer is also easy to control.

In addition, the present invention can obtain a high formation rate using AlCl, which is a metal chloride gas that is not used in the conventional HVPE method, it is possible to form a solid coating film on the object to be treated.

Furthermore, the present invention also has the advantage that the nitride coating film can be formed at a simple and low cost compared to the conventional plasma spray coating method.

In addition, the present invention is more useful because a coating film can be simultaneously formed on one or both surfaces of a plurality of objects to be processed.

Although the technical features of the present invention have been described above with reference to specific embodiments, those skilled in the art to which the present invention pertains may make various changes and modifications within the scope of the technical idea according to the present invention. It is obvious. For example, the gas homogenizer of the third embodiment using the vertical reaction tube can also be used in the horizontal reaction tube of the first or second embodiment.

100: reaction tube
200: reaction boat
210: raw material portion 220: object mounting portion
206: bulkhead
230: metal raw material 240: object to be processed
300: reaction gas supply unit
310: atmosphere gas supply unit 311: atmosphere gas supply pipe
320: nitriding reaction gas supply unit 321: nitriding reaction gas supply pipe
330: halogenated reaction gas supply unit 331: halogenated gas supply pipe
400: heating unit
600: gas homogenizer
610: first perforated plate 620: second perforated plate

Claims (21)

In the nitride coating film forming apparatus,
Reaction tube;
At least one raw material portion disposed in the reaction tube and mounted with a metal raw material;
Halogenation reaction gas supply pipe which supplies a halogenation reaction gas to the said raw material part; And
An object mounting unit disposed in the reaction tube, to which at least one object to be processed is mounted;
A nitriding reaction gas supply pipe for supplying a nitriding reaction gas to the object mounting unit; And
Heating unit for heating the reaction tube
Including,
The heating unit is a nitride coating film forming apparatus for heating to a temperature range of 900-1120 ℃. The method of claim 1,
The nitride coating film is a nitride coating film forming apparatus is aluminum nitride or gallium nitride. The method of claim 2,
The metal raw material is a nitride coating film forming apparatus containing aluminum or gallium in a solid state. The method of claim 1,
When there are a plurality of raw material parts,
The nitride coating film forming apparatus of each of the raw material portion is stacked in the vertical direction. The method of claim 1,
When there are a plurality of raw material parts,
And each raw material portion is disposed in the horizontal direction. The method according to claim 1 or 4,
The nitride coating film forming apparatus of the reaction tube is a horizontal type. The method according to claim 1 or 5,
The nitride coating film forming apparatus wherein the reaction tube is vertical. The method according to claim 4 or 5,
And a halogenated reaction gas supply pipe for supplying a halogenated reaction gas to each of the plurality of raw material parts. The method of claim 1,
The object mounted to the object mounting portion has the shape of a plate,
Nitride coating film forming apparatus that the coating is formed on both one surface and the other surface of the plate. The method of claim 1,
The object mounting portion nitride coating film forming apparatus for supporting the object at a predetermined height. The method of claim 1,
Gas homogenizer disposed between the raw material portion and the object mounting portion
Nitride coating film forming apparatus further comprising. The method of claim 11,
The gas uniforming unit includes a nitride coating film forming apparatus comprising at least one perforated plate. The method of claim 1,
The nitride coating film forming apparatus of which the raw material portion and the object mounting portion is made of graphite. As a nitride coating film forming method,
Disposing a metal raw material on one side of the reaction tube;
Placing an object in proximity to the metal raw material;
Heating the metal raw material and the object to a temperature in the range of 900-1120 ° C .;
Supplying a halogenation reaction gas to the metal raw material;
Supplying a nitriding reaction gas to the object;
Reacting the metal raw material with a halogenated reaction gas to generate a metal chloride gas; And
Forming a nitride coating film on the object by reacting the generated metal chloride gas with a nitriding reaction gas;
Nitride coating film forming method comprising a. The method of claim 14,
The nitride coating film is a nitride coating film forming method of aluminum nitride or gallium nitride. The method of claim 14,
The metal raw material is a nitride coating film forming method comprising aluminum in a solid state. The method according to claim 14 or 16,
The metal raw material is a nitride coating film forming method comprising a gallium in the solid state. The method of claim 17,
The nitride coating film formation method of the mass ratio of aluminum / gallium of the said metal raw material is 1-70. The method of claim 14,
The metal chloride gas produced in the step of producing a metal chloride gas by the reaction of the metal raw material and the halogenated reaction gas is AlCl nitride coating film forming method. The method of claim 14,
The thickness of the coating film formed on the object is a nitride coating film forming method proportional to the coating formation time. The method of claim 14,
The heating of the metal raw material and the object is a nitride coating film forming method of setting a stabilization temperature of 1050 ℃.

Images