KR100467267B1 - Apparatus and method for manufacturing GaN substrate - Google Patents
Apparatus and method for manufacturing GaN substrate Download PDFInfo
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- KR100467267B1 KR100467267B1 KR10-2002-0028908A KR20020028908A KR100467267B1 KR 100467267 B1 KR100467267 B1 KR 100467267B1 KR 20020028908 A KR20020028908 A KR 20020028908A KR 100467267 B1 KR100467267 B1 KR 100467267B1
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
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- B63B39/00—Equipment to decrease pitch, roll, or like unwanted vessel movements; Apparatus for indicating vessel attitude
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
- B63B—SHIPS OR OTHER WATERBORNE VESSELS; EQUIPMENT FOR SHIPPING
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15B—SYSTEMS ACTING BY MEANS OF FLUIDS IN GENERAL; FLUID-PRESSURE ACTUATORS, e.g. SERVOMOTORS; DETAILS OF FLUID-PRESSURE SYSTEMS, NOT OTHERWISE PROVIDED FOR
- F15B13/00—Details of servomotor systems ; Valves for servomotor systems
- F15B13/02—Fluid distribution or supply devices characterised by their adaptation to the control of servomotors
- F15B13/06—Fluid distribution or supply devices characterised by their adaptation to the control of servomotors for use with two or more servomotors
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15B—SYSTEMS ACTING BY MEANS OF FLUIDS IN GENERAL; FLUID-PRESSURE ACTUATORS, e.g. SERVOMOTORS; DETAILS OF FLUID-PRESSURE SYSTEMS, NOT OTHERWISE PROVIDED FOR
- F15B15/00—Fluid-actuated devices for displacing a member from one position to another; Gearing associated therewith
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B63—SHIPS OR OTHER WATERBORNE VESSELS; RELATED EQUIPMENT
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- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F15—FLUID-PRESSURE ACTUATORS; HYDRAULICS OR PNEUMATICS IN GENERAL
- F15B—SYSTEMS ACTING BY MEANS OF FLUIDS IN GENERAL; FLUID-PRESSURE ACTUATORS, e.g. SERVOMOTORS; DETAILS OF FLUID-PRESSURE SYSTEMS, NOT OTHERWISE PROVIDED FOR
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Abstract
본 발명은 질화갈륨 기판 제조 장치 및 방법에 관한 것으로, 액체화된 갈륨내부로 HCl가스가 통과되도록 반응챔버를 형성하고, 이 반응챔버에서 HCl가스를 갈륨에 통과시켜 반응시킴으로써, NH4Cl의 생성을 감소시킬 수 있고, 더불어 특성이 우수한 질화갈륨 기판을 제조할 수 있는 효과가 발생한다.The present invention relates to a gallium nitride substrate manufacturing apparatus and method, and to form a reaction chamber to pass the HCl gas into the gallium liquefied, the reaction chamber in the reaction chamber by passing the HCl gas through gallium, thereby producing the NH 4 Cl In addition, the effect of producing a gallium nitride substrate having excellent properties can be reduced.
Description
본 발명은 질화갈륨 기판 제조 장치 및 방법에 관한 것으로, 보다 상세하게는 액체화된 갈륨내부로 HCl가스가 통과되도록 반응챔버를 형성하고, 이 반응챔버에서 HCl가스를 갈륨에 통과시켜 반응시킴으로써, NH4Cl의 생성을 감소시킬 수 있고, 더불어 특성이 우수한 질화갈륨 기판을 제조할 수 있는 질화갈륨 기판 제조 장치 및 방법에 관한 것이다.The present invention relates to a gallium nitride substrate manufacturing apparatus and method, and more particularly, to form a reaction chamber to pass HCl gas into the gallium liquefied, the reaction chamber in the reaction chamber by passing the HCl gas through gallium, NH 4 The present invention relates to a gallium nitride substrate manufacturing apparatus and method that can reduce the production of Cl, and can also produce a gallium nitride substrate having excellent properties.
최근, 고 효율의 단파장 광소자에 대한 수요가 늘어남에 따라, 이러한 용도에 적합한 것으로 알려져 있는 화합물 반도체에 대한 연구가 많이 진행되고 있다.Recently, as the demand for high-efficiency short-wavelength optical devices increases, many researches have been conducted on compound semiconductors known to be suitable for such applications.
특히, 질화갈륨(GaN)을 이용한 발광소자는 넓고, 직접적인 에너지 밴드갭, 원자간의 큰 상호결합력과 높은 열 전도성으로 인하여 광소자와 고온 및 고전력 소자로서 이상적인 특성을 갖고 있다.In particular, a light emitting device using gallium nitride (GaN) has ideal characteristics as an optical device, a high temperature, and a high power device due to its wide, direct energy band gap, large mutual coupling force between atoms, and high thermal conductivity.
이러한 이유로 최근, 그 상업적인 개발을 목적으로 많은 연구가 진행되고 있다.For this reason, a lot of research has recently been conducted for the purpose of its commercial development.
이런 질화갈륨 계열의 발광 소자는 사파이어 (Al2O3)기판을 사용하여 제조하여왔다. 그러나, 질화갈륨과 사파이어는 격자 상수 및 열 팽창 계수의 차이로 인해, 사파이어 기판에 질화갈륨층을 형성하면, 고 밀도의 결정성 결함이 발생하는 문제점이 있었다.Such gallium nitride-based light emitting devices have been manufactured using a sapphire (Al 2 O 3 ) substrate. However, gallium nitride and sapphire have a problem that high density crystalline defects occur when a gallium nitride layer is formed on a sapphire substrate due to a difference in lattice constant and thermal expansion coefficient.
이를 해소하기 위해 프리 스탠딩(Free standing)된 질화갈륨 기판으로 발광소자를 제조하려는 시도가 이루어지고 있다.In order to solve this problem, an attempt has been made to manufacture a light emitting device using a free standing gallium nitride substrate.
도 1은 일반적인 질화갈륨 기판을 제조하기 위한 장치의 단면도로써, 외주면에 형성된 가열수단(20)에서 가열된 열로 고온을 유지하는 질화갈륨 기판 제조챔버(30)와; 상기 질화갈륨 기판 제조챔버(30)의 일측 일부분에 관통되어 형성되고, HCl가스를 상기 제조챔버(30)의 내부로 공급하는 제 1 가스 주입관(23)과; 상기 질화갈륨 기판 제조챔버(30)의 일측 타부분에 관통되어 형성되고, NH3가스를 공급하는 제 2 가스 주입관(24)과; 상기 제 1 가스 주입관(23)과 일 측이 연결되어, 갈륨(Ga)이 담겨져 있는 보트(11)가 내장되어 있는 반응챔버(10)와; 상기 반응챔버(10)의 타 측에 연결되어, HCl과 기화된 갈륨(Ga)이 반응되어 생성된 GaCl을 상기 질화갈륨 기판 제조챔버(30) 내부로 토출하는 토출관(13)과; 상기 질화갈륨 기판 제조챔버(30) 내부에 고정되어, 그 상부에 사파이어 기판(22)을 안치시킬 수 있는 서셉터(21)와; 상기 질화갈륨 기판 제조챔버(30)의 가스를 외부로 배출하는 배기관(25)으로 구성되어 있다.1 is a cross-sectional view of an apparatus for manufacturing a general gallium nitride substrate, the gallium nitride substrate manufacturing chamber 30 for maintaining a high temperature by the heat heated in the heating means 20 formed on the outer peripheral surface; A first gas injection pipe 23 formed through a portion of the gallium nitride substrate manufacturing chamber 30 and supplying HCl gas into the manufacturing chamber 30; A second gas injection tube 24 formed through the other portion of the gallium nitride substrate manufacturing chamber 30 and supplying NH 3 gas; A reaction chamber 10 having one side connected to the first gas injection pipe 23 and having a boat 11 containing gallium Ga therein; A discharge tube 13 connected to the other side of the reaction chamber 10 and discharging GaCl generated by reacting gallium (Ga) with HCl into the gallium nitride substrate manufacturing chamber 30; A susceptor 21 fixed to the inside of the gallium nitride substrate manufacturing chamber 30 and capable of placing the sapphire substrate 22 thereon; It consists of an exhaust pipe 25 which discharges the gas of the said gallium nitride substrate manufacturing chamber 30 to the outside.
도 2는 종래의 기술에 따른 HCl과 갈륨(Ga)을 반응시키는 반응챔버의 단면도로써, NH3가 도 1에 도시된 질화갈륨 기판 제조챔버가 가열수단에 의해 고온으로 가열되면, 반응챔버(10) 역시, 고온으로 가열된다.FIG. 2 is a cross-sectional view of a reaction chamber for reacting HCl and gallium (Ga) according to the related art. When NH 3 is heated to a high temperature by a gallium nitride substrate manufacturing chamber shown in FIG. ) Is also heated to high temperature.
이 때, 반응챔버(10) 내부 보트(11)에 담겨져 있는 갈륨은 용융되고, 용융된 상태에서 HCl 가스가 공급되면, HCl가스는 용융된 갈륨 표면으로 흐르게 되어,GaCl 형태의 분자로 기체화된다.At this time, the gallium contained in the boat 11 inside the reaction chamber 10 is melted, and when HCl gas is supplied in the molten state, the HCl gas flows to the molten gallium surface to vaporize into a GaCl-type molecule. .
그리고, 이 기화된 GaCl은 질화갈륨 기판 제조챔버 내로 공급되는 NH3와 반응되어 질화갈륨 결정이 사파이어 기판의 상부에 성장하게 된다..The vaporized GaCl is reacted with NH 3 supplied into the gallium nitride substrate manufacturing chamber to cause gallium nitride crystals to grow on top of the sapphire substrate.
그러나 이러한 종래의 반응챔버는 HCl과 용융된 Ga과의 접촉 면적이 적어 GaCl가 만들어지긴 하지만, 반응되지 않은 HCl이 직접 GaN 생성영역으로 주입되게 된다. 즉, 도 1에 도시된 토출관(13)에서는 GaCl과 HCl이 질화갈륨 기판 제조챔버 내부로 토출되고, 이 HCl은 NH3와 반응하여 NH4Cl 분말을 생성하게된다.However, although the conventional reaction chamber has a small contact area between HCl and molten Ga, GaCl is made, but unreacted HCl is directly injected into the GaN generation region. That is, in the discharge tube 13 shown in FIG. 1, GaCl and HCl are discharged into the gallium nitride substrate manufacturing chamber, and the HCl reacts with NH 3 to generate NH 4 Cl powder.
이러한 NH4Cl 분말은 질화갈륨 기판 제조챔버를 오염시켜, 질화갈륨이 성장되는 것을 방해할 뿐만 아니라, 성장되는 질화갈륨의 질이 나빠져 양질의 질화갈륨 기판 제조를 어렵게 만드는 문제점이 발생하였다.The NH 4 Cl powder contaminates the gallium nitride substrate manufacturing chamber, and not only prevents the growth of gallium nitride, but also increases the quality of the grown gallium nitride, which makes it difficult to manufacture high quality gallium nitride substrates.
이에 본 발명은 상기한 바와 같은 문제점을 해결하기 위하여 안출된 것으로, 액체화된 갈륨내부로 HCl가스가 통과되도록 반응챔버를 형성하고, 이 반응챔버에서 HCl가스를 갈륨에 통과시켜 반응시킴으로써, NH4Cl의 생성을 감소시킬 수 있고, 더불어 특성이 우수한 질화갈륨 기판을 제조할 수 있는 질화갈륨 기판 제조 장치 및 방법을 제공하는 데 그 목적이 있다.Accordingly, the present invention has been made to solve the problems described above, by forming a reaction chamber to pass the HCl gas into the liquid gallium, the reaction chamber in the reaction chamber by passing the HCl gas through gallium, NH 4 Cl It is an object of the present invention to provide a gallium nitride substrate manufacturing apparatus and method that can reduce the production of, and can produce a gallium nitride substrate having excellent properties.
상기한 본 발명의 목적을 달성하기 위한 바람직한 양태(樣態)는, 고온으로 가열되는 질화갈륨 기판 제조챔버내에 장착된 반응챔버에서 갈륨(Ga)과 HCl을 반응시켜, 기화된 GaCl을 질화갈륨 기판 제조챔버로 토출하고, 기화된 GaCl과 NH3가스의 반응으로 질화갈륨 기판을 제조하는 장치에 있어서,A preferred aspect for achieving the above object of the present invention is that gallium (Ga) and HCl are reacted in a reaction chamber mounted in a gallium nitride substrate manufacturing chamber heated to a high temperature so that vaporized GaCl is gallium nitride substrate An apparatus for ejecting into a production chamber and producing a gallium nitride substrate by reaction of vaporized GaCl and NH 3 gas,
상기 반응챔버는,The reaction chamber,
내부 하부면에서 내부 양 측면 일부까지 연장되어 형성되며, 각각 상호 이격되어 형성된 공간에 담겨진 갈륨의 이탈을 방지할 수 있는 적어도 둘 이상의 이탈 방지부와;At least two separation preventing portions formed extending from the inner lower surface to a portion of both inner side surfaces and preventing the separation of gallium contained in the spaces formed to be spaced apart from each other;
내부 상부면에서 양 측면 일부까지 연장되어 형성되며, 상기 한 쌍의 이탈 방지부가 상호 이격되어 형성된 공간에 담겨진 갈륨에 각각 일부가 묻혀 있는 적어도 하나 이상의 차단부로 구성된 것을 특징으로 하는 질화갈륨 기판 제조 장치가 제공된다.The gallium nitride substrate manufacturing apparatus is formed by extending from the inner upper surface to a part of both sides, wherein the pair of departure prevention portion is composed of at least one or more blocking portions each of which is partially buried in the gallium contained in the space formed spaced apart from each other Is provided.
상기한 본 발명의 목적을 달성하기 위한 바람직한 다른 양태(樣態)는, 고온으로 질화갈륨 기판 제조챔버를 가열하여 반응챔버내에 갈륨(Ga)을 용융시켜 액체화시키는 제 1 단계와;Another preferred aspect for achieving the above object of the present invention is a first step of heating the gallium nitride substrate manufacturing chamber at a high temperature to melt the gallium (Ga) in the reaction chamber to liquefy;
상기 액체화된 갈륨내부로 HCl을 통과시켜, 갈륨과 HCl이 반응되어 생성된 GaCl을 질화갈륨 기판 제조챔버내로 토출시키는 제 2 단계와;Passing HCl into the liquid gallium and discharging GaCl generated by reacting gallium and HCl into a gallium nitride substrate manufacturing chamber;
상기 제 2 단계 후, 질화갈륨 기판 제조챔버내로 NH3를 주입하여 상기 GaCl과 반응시켜 질화갈륨 기판 제조챔버에 장착된 사파이어 기판의 상부에 질화갈륨층을 형성하는 제 3 단계로 구성되어 있는 것을 특징으로 하는 질화갈륨 기판 제조 방법이 제공된다.And after the second step, a third step of forming a gallium nitride layer on top of the sapphire substrate mounted in the gallium nitride substrate manufacturing chamber by injecting NH 3 into the gallium nitride substrate manufacturing chamber to react with the GaCl. A gallium nitride substrate manufacturing method is provided.
도 1은 일반적인 질화갈륨 기판을 제조하기 위한 장치의 단면도이다.1 is a cross-sectional view of an apparatus for manufacturing a general gallium nitride substrate.
도 2는 종래의 기술에 따른 HCl과 갈륨(Ga)을 반응시키는 반응챔버의 단면도이다.2 is a cross-sectional view of a reaction chamber for reacting gallium (Ga) with HCl according to the prior art.
도 3은 본 발명에 따른 HCl과 갈륨(Ga)을 반응시키는 반응챔버의 단면도이다.3 is a cross-sectional view of a reaction chamber for reacting HCl and gallium (Ga) according to the present invention.
도 4a와 4b는 본 발명에 따른 HCl과 갈륨(Ga)이 반응되는 상태를 도시한 도면이다.4A and 4B are views illustrating a state in which HCl and gallium (Ga) react according to the present invention.
<도면의 주요부분에 대한 부호의 설명><Description of the symbols for the main parts of the drawings>
10,50 : 반응챔버 11 : 보트10,50: reaction chamber 11: boat
20 : 가열수단 21 : 서셉터20: heating means 21: susceptor
23,24 : 가스주입관 25 : 배기관23,24 gas injection pipe 25 exhaust pipe
30 : 질화갈륨 기판 제조챔버 61,62,63,64,65 : 이탈방지부30: gallium nitride substrate manufacturing chamber 61,62,63,64,65: departure prevention part
71,72,73,74 : 차단부 81,82,,83,84 : 공간71,72,73,74: Breaker 81,82,83,84: Space
이하, 첨부된 도면을 참조하여 본 발명의 바람직한 실시예를 설명하면 다음과 같다.Hereinafter, exemplary embodiments of the present invention will be described with reference to the accompanying drawings.
도 3은 본 발명에 따른 HCl과 갈륨(Ga)을 반응시키는 반응챔버의 단면도로써, 일정공간을 갖고, 일측에 주입관을 구비하고, 타측에 토출관을 구비하는 반응챔버(50)의 내부 하부면에서 내부 양 측면 일부까지 연장되어 형성되며, 각각 상호 이격되어 형성된 공간(81,82,83,84)에 담겨진 갈륨의 이탈을 방지할 수 있는 제 1 내지 5 이탈 방지부(61,62,63,64,65)와; 상기 반응챔버(50) 상부면에서 양 측면 일부까지 연장되어 형성되며, 상기 제 1 내지 5 이탈 방지부(61,62,63,64,65)가 상호 이격되어 형성된 공간(81,82,83,84)에 담겨진 갈륨에 각각 일부가 묻혀 있는 제 1 내지 4 차단부(71,72,73,74)로 구성된다.3 is a cross-sectional view of a reaction chamber for reacting HCl and gallium (Ga) according to the present invention, having a predetermined space, having an injection tube on one side, and an inner lower portion of the reaction chamber 50 having a discharge tube on the other side thereof. First to fifth departure preventing parts 61, 62, and 63 extending from the surface to a part of both inner side surfaces and preventing separation of gallium contained in the spaces 81, 82, 83, and 84 formed apart from each other, respectively; , 64, 65); A space extending from the upper surface of the reaction chamber 50 to a part of both sides, and the spaces 81, 82, 83, wherein the first to fifth departure preventing parts 61, 62, 63, 64, 65 are spaced apart from each other; 84 and the first to fourth blocking portions 71, 72, 73 and 74 each partially buried in gallium contained in it.
이렇게 구성된 반응챔버는 도 1에 도시된 일반적인 질화갈륨 기판의 제조장치에 장착되며, 도 4a에 도시된 바와 같이, 제 1 내지 5 이탈 방지부(61,62,63,64,65)의 사이 공간(81,82,83,84)에는 갈륨이 각각 담겨져 있고, 제 1 내지 4 차단부(71,72,73,74)는 상기 갈륨에 묻혀 있다.The reaction chamber configured as described above is mounted on the general apparatus for manufacturing a gallium nitride substrate shown in FIG. 1, and as shown in FIG. 4A, a space between the first to fifth departure preventing parts 61, 62, 63, 64, and 65. Gallium is contained in (81, 82, 83, 84), respectively, and the first to fourth blocking portions 71, 72, 73, and 74 are buried in the gallium.
그리고, HCl가스가 주입되면, 도 4b에 도시된 바와 같이, 제 1 이탈 방지부(61)를 넘어서, 제 1과 2 이탈 방지부(61,62)의 사이 공간에 담겨져 있는 용융된 갈륨을 일정한 압력으로 밀어주며, 이렇게 생긴 공간을 통해 기포상태로 HCl은 액체상태의 갈륨(Ga)을 통과하게 된다.When the HCl gas is injected, as shown in FIG. 4B, the molten gallium contained in the space between the first and second departure preventing portions 61 and 62 is fixed beyond the first separation preventing portion 61. It pushes it under pressure, and through this space, HCl passes through the liquid gallium (Ga) in a bubble state.
이 때, 갈륨은 HCl가스와 반응하여 GaCl가스가 되고, 나머지 공간(82,83,84)에 담겨져 있는 갈륨을 통과하는 반복과정을 통해, 최종적으로 토출되는 가스는 GaCl가스 및 H2이며, HCl은 거의 존재하질 않게 되어, NH4Cl의 생성을 감소시킬 수 있으며, 질화갈륨 기판 제조 장치를 오염시키지 않아 특성이 우수한 질화갈륨 기판을 제조할 수 있게 된다.At this time, gallium reacts with HCl gas to become GaCl gas, and through the repetitive process of passing through gallium contained in the remaining spaces 82, 83 and 84, the finally discharged gases are GaCl gas and H 2 , and HCl Is hardly present, so that the production of NH 4 Cl can be reduced, and the gallium nitride substrate manufacturing apparatus can be produced without contaminating the gallium nitride substrate manufacturing apparatus.
따라서, 본 발명은 종래의 반응챔버보다 HCl가스와 갈륨(Ga)의 반응효율을 우수히 할 수 있다.Therefore, the present invention can improve the reaction efficiency of HCl gas and gallium (Ga) than the conventional reaction chamber.
이상에서 상세히 설명한 바와 같이 본 발명은 액체화된 갈륨내부로 HCl을 통과시키도록 반응챔버를 형성함으로써, NH4Cl의 생성을 감소시키고, 특성이 우수한 질화갈륨 기판을 제조할 수 있는 효과가 있다.As described in detail above, the present invention has the effect of reducing the production of NH 4 Cl and producing a gallium nitride substrate having excellent properties by forming a reaction chamber to pass HCl into the liquefied gallium.
본 발명은 구체적인 예에 대해서만 상세히 설명되었지만 본 발명의 기술사상 범위 내에서 다양한 변형 및 수정이 가능함은 당업자에게 있어서 명백한 것이며, 이러한 변형 및 수정이 첨부된 특허청구범위에 속함은 당연한 것이다.Although the invention has been described in detail only with respect to specific examples, it will be apparent to those skilled in the art that various modifications and variations are possible within the spirit of the invention, and such modifications and variations belong to the appended claims.
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| JP2001181097A (en) * | 1999-12-22 | 2001-07-03 | Nec Corp | Vapor growth apparatus of nitride |
| KR20020018557A (en) * | 2000-09-01 | 2002-03-08 | 시바타 마사하루 | An apparatus for fabricating a ⅲ-ⅴ nitride film and a method for fabricating the same |
| JP2002305155A (en) * | 2001-04-09 | 2002-10-18 | Nikko Materials Co Ltd | CRYSTAL GROWING APPARATUS FOR GaN-BASED COMPOUND SEMICONDUCTOR CRYSTAL |
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| JP2001181097A (en) * | 1999-12-22 | 2001-07-03 | Nec Corp | Vapor growth apparatus of nitride |
| KR20020018557A (en) * | 2000-09-01 | 2002-03-08 | 시바타 마사하루 | An apparatus for fabricating a ⅲ-ⅴ nitride film and a method for fabricating the same |
| JP2002305155A (en) * | 2001-04-09 | 2002-10-18 | Nikko Materials Co Ltd | CRYSTAL GROWING APPARATUS FOR GaN-BASED COMPOUND SEMICONDUCTOR CRYSTAL |
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