JP2001302398A - Method and device for growing epitaxial layer of nitride of group iii on single crystal substrate - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a method of growing an epitaxial layer of a nitride of group III on a single crystal substrate by the epitaxial growth by alternate supply of reaction(EGAS). SOLUTION: A device for producing a multilayer structure for a photoelectric element is composed of a rotatable susceptor having plural opening parts (17, 18 and 19) and plural gas supplying columns (12, 14 and 16) each corresponding to each opening part. The susceptor is constituted of a hollow supporting axis (29), a rotary axis (290) provided in the supporting axis, a graphite cover part (24) having a plural leaf form, a graphite stand part (26) having a plural leaf form and provided on it at a certain interval, plural chambers (27), each formed between the graphite cover part and the graphite stand part and graphite rotary boards (28) for mounting substrates. The graphite rotary boards (28) mentioned above are each accommodated in the camber (27) mentioned above by the rotation of the rotation axis or are each situated at one of the plural opening parts mentioned above.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to a method for growing a Group III nitride epitaxial layer on a single crystal substrate,
In particular, the epitaxial growth (Epita
xial growth by alternate
By supplying a group III element-containing organic metal gas and a nitrogen-containing gas alternately to the surface of the single crystal substrate by the technique of supply of reaction (EGAS) and performing thermal decomposition, an epitaxial layer is formed on an inexpensive single crystal substrate. On how to grow. Further, the present invention relates to an apparatus having a multilayer structure manufactured by the above method and an apparatus for growing an epitaxial layer on a single crystal substrate using the method.

[0002]

2. Description of the Related Art Light emitting diodes (LEDs) have advantages such as a high luminescence effect, a short response time, and a long service life. Therefore, it is viewed as the best source of continuous light and can be applied to any lighting and traffic lights. In a semiconductor device, a light emitting diode using a Group III nitride has an energy band.
The blue, green, or ultraviolet (UV) light can be generated as the distance between the electrodes is adjusted from 1.9 eV to 6.2 eV, so that a light emitting diode corresponding to such light can be manufactured. As an example, a quaternary alloy-based In-Al-Ga
Light emitting diodes using -N. A full-color display can be manufactured with a blue LED, a green LED, and a red LED based on GaAs. Also, a white LED can be manufactured using a UV LED chip and a fluorescent sealing material. Therefore, if the raw material cost and the manufacturing cost of the full-color display and the white LED can be reduced, there is a possibility that their use range may be further expanded.

Also, a halide vapor phase epitaxial method, that is, HVPE (Mazuskaand Tietj) is used.
en, Applied Physics Lette
rs, vol. 15, pp. 327, 1969) grows single crystal GaN on a sapphire substrate. GaN has a structure with an energy band interval of approximately 3.39 eV. Thereafter, Pankove et al. Described a first metal-insulator-semiconductor (MIS) blue or green LED (RCA Review, vol. 3) using GaN as a substrate.
2, pp. 283, 1971). Further, 19
In 1974, Akasaki et al. Realized the formation of a single crystal GaN layer by molecular beam epitaxy (MBE). Thereafter, a practical MIS blue-green LED produced by the HVPE method was first announced (Inst. Phys.
s. Conf. Ser. 63, 479, 1981). Further, in 1993, S.M. Nakamura is the first company to use two-stream metal organic vapor deposition (TF-MOCVD) to achieve high brightness (>
A 1000 mcd) blue LED was manufactured and the LED was launched in 1994 (blue laser diode).

At present, high-output blue and green LEDs using GaN as a substrate, which are excellent in practical use, are manufactured, and blue lasers emitting continuous waves are also manufactured.

[0005]

However, what is manufactured remains a problem. <A> For example, the mismatch between the huge lattice of the group III nitride and the sapphire substrate material (16%), the insufficient hardness of the substrate, the chemical inertness, the high manufacturing cost, the high electrical insulation, etc. is there. <B> As other blue LEDs, GaN-type blue LEDs are manufactured by MOCVD using SiC as a substrate, and the brightness of the blue LED is much lower than the brightness of a blue LED manufactured on a sapphire substrate. <C> The MOCVD technique has disadvantages. For example, when a substrate is manufactured using sapphire or SiC,
The manufacturing cost of the substrate is high, and there is a problem of lattice mismatch. Therefore, a less expensive substrate is required, and a multilayer structure technology is more and more required to effectively eliminate lattice mismatch.

[0006]

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and an object of the present invention is to grow a Group III nitride epitaxial layer on a single crystal substrate by an alternate supply type epitaxial technique (EGAS). And a device therefor.

[0007]

As a means for solving the above problems, the present invention provides a method for growing a Group III nitride epitaxial layer on an inexpensive single crystal substrate by an alternate supply type epitaxial technique. For the purpose, the group III element-containing organometallic gas and the nitrogen-containing gas are alternately supplied to the surface of the single crystal substrate to cause thermal decomposition,
An epitaxial layer is grown on the single crystal substrate.

Another object of the present invention is to provide a multilayer structure capable of realizing a better lattice composition by selecting an appropriate intermediate layer (buffer layer) and providing a suitable crystal growth environment. In addition, it is possible to prevent a dislocation generated between lattices of the substrate and the epitaxial layer when growing an epitaxial layer on the substrate.

Another object of the present invention is to provide an apparatus for growing an epitaxial layer on a single crystal substrate. The present invention is directed to a supporting shaft, and a multi-leafed structure fixed on the supporting shaft and each leaf corresponding to the supporting shaft. A bifurcated graphite pedestal disposed on the graphite lid at a fixed interval, a plurality of chambers formed between the bifurcated graphite lid and the graphite pedestal, A susceptor, which is fixed on the susceptor and includes a graphite rotary disk for mounting a substrate, and a plurality of gas supply columns.

[0010] By rotating the graphite rotating disk, the substrate placed thereon is covered or exposed to the outside of the graphite lid portion, and a group III element-containing organometallic gas and nitrogen are supplied from the gas supply column. An epitaxial layer is grown on the substrate by supplying the contained gas to the substrate to cause thermal decomposition.

[0011]

Preferred embodiments of the present invention will be described below in detail with reference to the accompanying drawings.

FIG. 1 is a view showing an apparatus for growing a group III nitride by the EGAS technique according to the present invention.
Is the TMA (trim) of each flow rate according to the present invention.
AIN generated by (thyl alumina)
FIG. 3 shows an X-ray diffraction of the (250 nm) / Si epitaxial layer. FIG. 3 shows GaN (200 nm) / A of the present invention.
FIG. 4 shows the X-ray diffraction of the 1N (250 nm) / Si epitaxial layer. FIG. 4 shows the measured GaN (200 nm) / AlN (250 nm) / Si at room temperature of the present invention.
The photoluminescence spectrum of the epitaxial layer (ph
otoluminance spectrum, P
(L spectrum).

[0013] The alternating feed epitaxial (EGAS) method is a chemical adsorp- tion of a plurality of reaction gases to a respective substrate.
n) Ability and physical adsorp
Tion) This is a method of growing an epitaxial layer on a substrate using a difference in ability. The difference between the alternate supply type epitaxial method and a conventional technique such as molecular beam epitaxy (MBE) or metal organic chemical vapor deposition (MOCVD) is that the latter supplies a plurality of reacting gases simultaneously to a substrate and thermally decomposes them. On the other hand, the former alternately supplies a plurality of reaction gases onto the substrate to thermally decompose them. Each of these methods has its own reaction mechanism. The EGAS controls the growth rate (0.05 to 10 μm / min) of the epitaxial layer by controlling the flow rate of the supplied gas, the composition of the gas, the epitaxial temperature, and the rotation speed of the graphite rotating disk. Nitride can be grown.

A first object of the present invention is to alternately supply a group III element-containing organometallic gas and a nitrogen-containing gas to the surface of a single crystal substrate by EGAS technology and to thermally decompose the same, thereby forming a first substrate on the single crystal substrate. An object of the present invention is to provide a method for growing a group III nitride epitaxial layer. More specifically, the method includes the following steps. (A) washing and drying the single crystal substrate, (b) installing the single crystal substrate in an epitaxial growth apparatus, (c) heating the single crystal substrate to a predetermined temperature, (d) A) supplying a group 3 element-containing organometallic gas onto the single crystal substrate to chemically adsorb the group 3 element onto the single crystal substrate; and (e) depositing a nitrogen-containing gas onto the single crystal substrate. Supplying and reacting the Group 3 element with nitrogen to grow an epitaxial layer of the Group 3 element.

The single crystal substrate used in the above step (a) is made of Al ₂ O ₃ , Si, Ge, GaAs, GaP, S
Although one selected from iC can be used, the present invention
It is preferable to use a single crystal substrate.

FIG. 1 schematically shows a more preferred embodiment of the epitaxial apparatus used in the above (b). In general, such an apparatus is a vacuum reaction chamber made of quartz or other material. (Not shown).
Since the structure having the vacuum reaction chamber is known to those skilled in the art, the description thereof is omitted here.

The epitaxial apparatus shown in FIG. 1 includes a rotatable susceptor (20) having a plurality of openings (17, 18, 19) and the openings (17, 18, 19) respectively.
Gas supply columns (12, 14, 16) corresponding to
The susceptor (20) has a hollow support shaft (29), a rotation shaft (290) provided in the support shaft (29), one end of which protrudes from the support shaft (29); A compound leaf-shaped graphite base (26) fixed on the shaft (29), each leaf corresponding to the compound leaf-shaped graphite lid (24), and arranged at a fixed interval thereover; A plurality of chambers (27) formed between the bi-leafed graphite lid (24) and the graphite pedestal (26); and a graphite rotation fixed on the rotation shaft (290) for mounting a substrate. A plurality of openings (17, 18, 19) are formed between the leaves of the graphite lid (24), and the graphite rotating disk (28) is provided with the rotating shaft. (290) is accommodated in the chamber (27) by rotation, or the plurality of openings (17, Is located in 8, 19).

The following is a description with reference to FIG. In the step (b), after the substrate is set on the graphite rotating disk (28) in the susceptor (20), the graphite rotating disk (28) is rotated to heat with the heat from a heating device (not shown). Step (c) is performed. As a heating device that provides a heat source, for example, there is a high-frequency sensor heater.

In the following steps (d) to (e), a group III-containing organometallic gas is supplied from the gas supply columns (12, 16), and hydrogen gas and / or hydrogen gas is also supplied from the gas supply column (14). Supply nitrogen gas. Then, by rotating the graphite rotating disk (28) to the opening (18), the opening (1) is placed on the graphite rotating disk (28).
The group 3 element-containing organometallic gas ejected from 8) is adsorbed, and the graphite turntable (28) is further rotated to the opening (17) to adsorb the group 3 element-containing organometallic gas. A nitrogen-containing gas ejected from the opening (17) onto the graphite rotating disk (28) is reacted with the organometallic gas to generate a group III nitride. The nitrogen-containing gas that can be used in the present invention is not particularly limited,
Preferably, NH ₃ is used. In the present invention, Al, Ga, In is deposited on the substrate by a group 3 element-containing organometallic gas.
AlN, GaN, InN, and alloy nitride (AlGaInN) composed of such elements can be formed.

In order to achieve another object of the present invention,
Following the above step (e), further (f) supplying another group III element-containing organometallic gas onto the epitaxial layer to chemically adsorb the other group 3 element onto the epitaxial layer. (G) supplying a nitrogen-containing gas onto the epitaxial layer to cause the other Group 3 element to react with nitrogen and grow an epitaxial layer of another Group 3 element;
By forming another nitride epitaxial layer on the already formed nitride epitaxial layer,
A single-crystal substrate having a multilayer structure can be manufactured. Examples of the other nitride epitaxial layers include gallium nitride (GaN). Hereinafter, the present invention will be described in more detail with reference to two examples.

[0021]

Embodiment 1 Example of epitaxial growth of AlN buffer layer

After using the (111) plane Si single crystal as a substrate and washing the Si substrate to a high degree (Note), the graphite rotating disk (28) in the reaction chamber consisting of the outer wall of quartz (FIG. 1) And heated by a high-frequency sensor heater. The frequency used in the high-frequency sensor heater is 1 to 15 M
Hz, and the rotation speed of the graphite rotating disk (28) is adjustable. Further, when the graphite rotating disk (28) on which the Si substrate is mounted is rotated clockwise to reach a position below the opening (18) to which the group III element-containing metal organic gas is supplied, the opening is rotated. The molecules of the gas supplied from (18) are adsorbed on the Si substrate by a chemisorption method, and then the graphite rotating disk (28) on which the Si substrate is mounted is rotated to remove hydrogen gas and / or nitrogen gas. When reaching the lower part of the supplied opening (14), the metal organic gas remaining on the Si substrate by the gas flow of the hydrogen gas and / or the nitrogen gas is removed, and finally the graphite rotation on which the Si substrate is placed is placed. When the board (28) reaches below the opening (17) to which the ammonia gas is supplied, the molecules of the ammonia supplied from the opening (17) are adsorbed on the surface of the substrate, and the AlN epitaxy is there. Growing an AlN epitaxial layer by generating a reaction layer. As shown below, the molecules of the adsorbed gas are 2 on the substrate.
Step chemical reactions take place.

(Equation 1)

(Equation 2)

The epitaxial temperature of the AlN is 100
0 to 1100 ° C., first, as shown in the formula 1, a solid intermediate adsorbate of Si · Al is formed on the Si substrate by the chemisorption method, and then, in the second stage, the formula 2
The intermediate adsorbate further reacts with the ammonia gas to grow molecules of the AlN compound as shown in FIG. The flow rate of TMA used in the above reaction step is 0.14 mol / m
and the proportionality of the flow rate of NH ₃ to TMA is 1.
9 × a ^105, the rate of growing the crystal can vary from 0.37~1.86μm / h by adjusting the flow rate of TMA.

As can be seen from the X-ray diffraction of an AlN epitaxial layer having a thickness of 250 nm at each TMA flow rate shown in FIG. 2, when the TMA flow rate is too high or too low, the X-ray diffraction of the AlN epitaxial layer is Since the peak value of AlN in the diagram shown in the drawing becomes low and adversely affects the quality of the generated epitaxial crystal,
It is preferable to adjust the flow rate of MA to 0.014 mol / min. (Note: First, the Si substrate was 2-propanol,
Put in an aqueous solution containing acetone, metinol, and deionized water, boil the aqueous solution for 5 minutes, and spray the Si substrate with pure nitrogen gas until dry, and then add 5% H
Etching by immersion in an aqueous solution of F
Cl: H ₂ O ₂ : H ₂ O = 1: 1: 3 into an aqueous solution, further boil the aqueous solution, then immerse the substrate in a 5% HF aqueous solution, and at the same time, remove the Si with deionized water. After the substrate is cleaned, and the Si substrate is sprayed with nitrogen gas having a pure composition until it is dry, the substrate is positioned in an EGAS reactor to perform an epitaxial growth process. )

[0025]

Embodiment 2 Example of epitaxial growth of GaN / AlN / Si

Although it is difficult to directly form an AlN epitaxial layer (ie, a single crystal layer) on a Si substrate, if an AlN buffer layer is formed on the Si substrate in advance,
A GaN epitaxial layer can be grown on the AlN buffer layer. The conditions for growing the AlN buffer layer are the same as the conditions for growing the AlN buffer layer in the first embodiment. Further, after the formation of the AlN buffer layer, the gas supplied onto the substrate is changed to another gas (a group 3 element-containing organometallic gas), TMGa (tri).
methyl galium) to the next Ga
Move on to N epitaxial growth process. The flow rate of the TMGa gas used in this step is 34 μmol / min, the flow rate of the NH ₃ gas is 0.2 μmol / min, and the epitaxial temperature for growing the epitaxial layer is 1000 ° C. The mechanism for growing GaN, like the mechanism for growing AlN, is divided into two stages (Fig. 1).
), An opening (16) for supplying a Group 3 TMGa gas by rotating a graphite rotating disk (28) on which a Si substrate is mounted.
When the gas reaches the lower part of the Si, the molecules of the TMGa gas supplied from the opening (16) are converted to the Si by a chemisorption method.
When the graphite rotating disk (28) which is adsorbed on the substrate and then places the Si substrate thereon is rotated to reach a position below the opening (12) for supplying NH ₃ gas, The NH ₃ gas is adsorbed on the surface of the Si substrate, and the two-step chemical reaction is performed as follows.

(Equation 3)

(Equation 4)

In the first stage shown in Equation 3, Si (s) · A
A solid intermediate adsorbate of 1N (s) .Ga (s) is formed to be adsorbed on the surface of AlN on the Si substrate in a chemisorption manner, and then in a second stage, as shown in equation 4, The intermediate adsorbate is further decomposed to form a GaN epitaxial layer.

GaN (200 nm) / AlN shown in FIG.
(20 nm) / Si and GaN (200 nm) / AlN
As can be seen from the figure showing the X-ray diffraction of the (100 nm) / Si epitaxial layer, the thickness of the AlN buffer layer was 20 μm.
When nm, GaN on the (0002) plane shows the highest diffraction peak value, that is, the GaN epitaxial layer has optimal crystal properties. On the other hand, when the thickness of the buffer layer reaches 100 nm, a stress relaxation effect occurs in the buffer layer.
The diffraction peak value is significantly lower.

The GaN used in this embodiment is p-doped, n-doped or undoped Ga.
The element used in the p doping is Mg with a concentration of 10 ¹⁶ to 10 ¹⁸ cm ⁻³ , and the element used in the n doping is Si with a concentration of 10 ¹⁷ to 10 ¹⁹ cm ⁻³ .
It is.

Further, by changing the type of gas supplied from the gas supply column, heterogeneous bonding (hetero-
junctioned possible multiple quantum wells
GaN having a (quantum well) structure can be formed.

GaN (200 nm) / AlN shown in FIG.
As can be seen from the photoluminescence spectrum (PL spectrum) of the (100 nm) / Si epitaxial layer measured at room temperature, the PL spectrum measured from the undoped GaN epitaxial layer has a band edge of 3.
PL determined from band edge emission of 406 eV and measured from a GaN epitaxial layer formed on a sapphire substrate by a conventional MOCVD manufacturing process.
The spectrum is almost the same, and the width of the peak in the PL spectrum is relatively narrow, about 110 meV. Further, as shown in FIG. 4, in the conventional manufacturing process, the yellow luminescence (yellow luminescence) phenomenon in the yellow luminescence zone (2.2 (±) 0.2 eV) generated in the GaN epitaxial layer is suppressed, Compared to the main peak value at 3.406 eV,
The peak value at 2.2 (±) 0.2 eV is too low and may be ignored. Such a feature is, for example, LE
D, laser diode (LD), photosensitive element, very important for high efficiency transistors.

[0032]

According to the present invention, as described above, the following effects can be obtained. <A> The present invention provides a method for growing a Group 3 nitride epitaxial layer on an inexpensive single crystal substrate by an alternate supply epitaxial technique. Specifically, an epitaxial layer can be grown on a single crystal substrate by alternately supplying a group 3 element-containing organic metal gas and a nitrogen-containing gas to the surface of the single crystal substrate and thermally decomposing the same.

<B> The present invention provides a multilayer structure capable of realizing a better lattice composition.

[Brief description of the drawings]

FIG. 1 is a diagram showing an apparatus for growing a group III nitride by EGAS technology according to the present invention.

FIG. 2 is a diagram showing X-ray diffraction of an AlN (250 nm) / Si epitaxial layer generated by TMA at each flow rate according to the present invention.

FIG. 3 shows GaN (200 nm) / AlN (2
The figure which shows the X-ray diffraction of a 50 nm) / Si epitaxial layer.

FIG. 4 shows the measured GaN (2
00 nm) / AlN (250 nm) / Si epitaxial layer photoluminescence spectrum (photolum)
inensespectra, PL spec
FIG.

[Explanation of symbols]

 12, 14, 16 Gas supply column 17, 18, 19 Opening 20 Susceptor 24 Graphite lid 26 Graphite stand 27 Chamber 28 Graphite rotating plate 29 Support shaft 290 Rotation shaft

 ──────────────────────────────────────────────────続 き Continued on the front page F term (reference) 4G077 AA03 BE11 BE13 BE15 DB08 DB13 EB01 ED06 EG21 HA02 5F041 AA40 CA05 CA33 CA35 CA37 CA40 CA46 5F045 AA04 AB09 AB14 AC07 AC12 AF03 AF04 AF09 CA10 CA12 CB01 CB02 DA52 DA55 DA63 D

Claims (20)

[Claims] (A) washing and drying the single crystal substrate; (b) installing the single crystal substrate in an epitaxial growth apparatus; and (c) heating the single crystal substrate to a predetermined temperature. (D) supplying a group 3 element-containing organometallic gas onto the single crystal substrate to chemically adsorb the group 3 element onto the single crystal substrate; and (e) converting the nitrogen-containing gas into the single crystal substrate. The third substrate is supplied on a single crystal substrate.
A method of growing a group III element epitaxial layer on a single crystal substrate, comprising: reacting a group III element with nitrogen to grow an epitaxial layer of a group III element. 2. The single crystal substrate according to claim 1, wherein the single crystal substrate is selected from Al ₂ O ₃ (sapphire), Si, Ge, GaAs, GaP, and SiC wafer. A method of growing an epitaxial layer of Group III nitride. 3. The method as claimed in claim 1, wherein the single crystal substrate is a Si wafer. 4. The method as claimed in claim 1, wherein the nitrogen-containing gas is ammonia. 5. The group III nitride on a single crystal substrate according to claim 1, wherein the group III element contained in the organometallic gas is selected from Al, Ga, and In. A method of growing an epitaxial layer. 6. The method according to claim 1, wherein the Group III nitride epitaxial layer is a buffer layer in a photoelectric device.
A method for growing an epitaxial layer of Group III nitride on a single crystal substrate according to claim 1. 7. A step of washing and drying the single crystal substrate, a step of installing the single crystal substrate in an epitaxial growth apparatus, and a step of heating the single crystal substrate to a predetermined temperature. (D) supplying a group 3 element-containing organometallic gas onto the single crystal substrate to chemically adsorb the group 3 element onto the single crystal substrate; and (e) converting the nitrogen-containing gas into the single crystal substrate. The third substrate is supplied on a single crystal substrate.
Reacting a Group 3 element with nitrogen to grow a Group 3 element epitaxial layer; and (f) supplying another Group 3 element-containing organometallic gas onto the epitaxial layer to form the other Group 3 element. (G) supplying a nitrogen-containing gas onto the epitaxial layer to cause the other group 3 element to react with nitrogen, thereby causing the other group 3 element to epitaxially adsorb. A method of growing a plurality of Group III nitride epitaxial layers on a single crystal substrate, wherein the step of growing the layers is performed in order. 8. The single crystal substrate according to claim 7, wherein the single crystal substrate is selected from Al ₂ O ₃ (sapphire), Si, Ge, GaAs, GaP, and SiC wafer. A method of growing a plurality of Group III nitride epitaxial layers. 9. The method as claimed in claim 7, wherein the single crystal substrate is a Si wafer. 10. The method according to claim 7, wherein the nitrogen-containing gas is ammonia. A method for growing a plurality of Group III nitride epitaxial layers on a single crystal substrate according to claim 7, wherein the nitrogen-containing gas is ammonia. 11. The group III element contained in the organometallic gas in (d) is an element selected from Al, Si, and Ge, and the epitaxial layer formed by the element includes GaN, AlN, InN, AlGaInN
The method of growing a plurality of Group III nitride epitaxial layers on a single crystal substrate according to claim 7, wherein the epitaxial layer is selected from the group consisting of: 12. The method according to claim 7, wherein the third group element contained in the organometallic gas in (e) is Ga, and the epitaxial layer formed by the element is a GaN epitaxial layer. 3. The method for growing a plurality of Group 3 nitride epitaxial layers on a single crystal substrate according to 1. 13. The single crystal substrate according to claim 1, wherein the GaN / AlN /
8. The method for growing a plurality of Group III nitride epitaxial layers on a single crystal substrate according to claim 7, wherein the single crystal substrate has a multilayer structure of Si. 14. The single crystal substrate according to claim 1, wherein the GaN / AlN /
Characterized in that it is a multi-layer structure of al ₂ O ₃ (Safuaia), a method of growing an epitaxial layer of a group III nitride multiple layers on a single crystal substrate according to claim 7. 15. The single crystal substrate according to claim 1, wherein the GaN / AlN /
The method of growing a plurality of Group III nitride epitaxial layers on a single crystal substrate according to claim 7, characterized in that it has a multilayer structure of SiC (wafer). 16. The single crystal substrate according to claim 13, wherein the GaN layer is a p-doped, n-doped, or undoped GaN layer.
A method of growing an epitaxial layer of group nitride. 17. The method according to claim 16, wherein the element used for p-doping the GaN layer is Zn or Mg, and the concentration of the element is 10 ¹⁷ to 10 ¹⁹ cm ^−3. Third layer of a single crystal substrate
A method of growing an epitaxial layer of group nitride. 18. The method according to claim 16, wherein the element used for n-doping the GaN layer is Si, and the concentration of the element is 10 ¹⁷ to 10 ¹⁹ cm ^−3. Growing a plurality of Group III nitride epitaxial layers on the single crystal substrate. 19. The method according to claim 19, wherein the multilayer structure is a multi-quantum well.
The method according to claim 13, wherein the single crystal substrate is applied to a light emitting diode, a laser diode, a light sensing element, and a high power transistor. How to grow. 20. A rotatable susceptor (20) having a plurality of openings (17, 18, 19) and a plurality of gas supply columns (12, 14) respectively corresponding to said openings (17, 18, 19). , 16), and the susceptor (20) is fixed on the support shaft (29) and the support shaft (29), and each leaf corresponds to a double leaf-shaped graphite lid (24). And a bipartite graphite base (26) disposed thereunder at a fixed interval; and a plurality of graphite bases (26) formed between the bipartite graphite lid (24) and the graphite base (26). A plurality of openings (17, 18, 19), comprising a chamber (27) and a graphite rotating disk (28) fixed on the rotating shaft (290) for mounting a substrate thereon. 24), and the graphite rotating disk (28) is formed between the leaves of 290) The device for manufacturing a multilayer structure for a photoelectric device, wherein the device is accommodated in the chamber (27) by rotation of the chamber (27) or located in the plurality of openings (17, 18, 19).