JP2003212695A - Method of manufacturing nitride-based compound semiconductor wafer, nitride-based compound semiconductor wafer, and nitride-based semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To grow a nitride-based compound semiconductor layer on a substrate having an uppermost layer of a nitride-based compound semiconductor without interposing an amorphous buffer layer while controlling the characteristics and the flatness of the surface. <P>SOLUTION: When a nitride-based compound semiconductor laminate structure (GaN layer 5) is grown on a substrate 4 having a nitride-based compound semiconductor single crystal layer 3 as the uppermost layer in a vapor phase without interposing a nitride-based compound semiconductor buffer layer grown at a low temperature between the uppermost layer and the nitride-based compound semiconductor laminate structure, the introduction of a group V raw material (ammonia) into a reaction furnace is firstly started and then the introduction of a group III raw material (TMG) is started. Thereby, the flatness and electrical and optical characteristics of the nitride-based compound semiconductor laminate structure are controlled. <P>COPYRIGHT: (C)2003,JPO

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a nitride compound semiconductor wafer, a semiconductor wafer and a semiconductor device, and more particularly to a substrate having a single crystal nitride compound semiconductor layer on the outermost surface including a GaN single crystal substrate. The present invention relates to a growth method in which the characteristics of a nitride-based compound semiconductor laminated structure are controlled, and a nitride-based semiconductor wafer and a nitride-based compound semiconductor device obtained by the growth method.

[0002]

2. Description of the Related Art Nitride-based compound semiconductors such as GaN, AlGaN, and InGaN have been attracting attention as light-emitting element materials capable of emitting red to ultraviolet light.

Usually, the growth of a nitride compound semiconductor is performed on a sapphire substrate. In this case, by inserting a nitride-based compound semiconductor buffer layer grown at a low temperature of 600 ° C. or lower between the sapphire substrate and the nitride-based compound semiconductor, a lattice mismatch between the sapphire substrate and the nitride-based compound semiconductor is obtained. A nitride-based compound semiconductor having relaxed matching and good characteristics to some extent has been obtained. For this reason, enormous studies have been made and established regarding the growth of the nitride compound semiconductor on the sapphire substrate.

However, the growth of a nitride compound semiconductor on a nitride compound semiconductor is not yet a mature technology, although it is an extremely important technology as described below.

The importance of growing a nitride compound semiconductor on a nitride compound semiconductor will be described below.

When a low temperature growth buffer layer is used to grow a nitride-based compound semiconductor layer on sapphire, the grown nitride-based compound semiconductor layer contains defects of about 10 ¹⁰ cm ^-2. Density defects have a large negative effect on the final device characteristics. For this reason, a GaN single crystal substrate has been developed in recent years, but in order to fully utilize the advantage of the excellent crystallinity of the GaN single crystal substrate, a technique for epitaxially growing a high-quality nitride compound semiconductor layer thereon. Is essential.

Further, a structure in which a nitride-based compound semiconductor epitaxial layer is grown on a sapphire substrate is used as a substrate.
Technology for regrowth on top of that is also very important. That is, in the growth of the nitride compound semiconductor on the sapphire substrate using the low temperature buffer layer, the growth conditions of the low temperature buffer layer portion to obtain a high quality nitride compound semiconductor layer are very delicate, A slight change in the growth conditions of the buffer layer greatly affects the characteristics of the nitride-based compound semiconductor layer grown thereon. Such instability causes a decrease in yield and sometimes a significant decrease in productivity in the production of nitride compound semiconductor wafers and devices. To avoid this instability, prepare a structure in which a low-temperature buffer layer and a nitride-based compound semiconductor layer are grown on a sapphire substrate in advance, and grow the actual device structure on this substrate. The method of doing is effective. Also in this case, it is necessary to grow the nitride compound semiconductor on the nitride compound semiconductor.

Furthermore, ELO (Epitax) developed as a technology for reducing defects in nitride compound semiconductors on a sapphire substrate
Also in the ial lateral overgrowth technology, an insulator mask having an opening is applied to the GaN layer on the sapphire substrate, and regrowth is performed thereon.

[0009]

However, it cannot be said that the technology for growing a nitride compound semiconductor on a nitride compound semiconductor has been established yet.

A method of epitaxially growing an epitaxial layer of GaN after forming a GaN amorphous layer (which corresponds to a low temperature growth buffer layer generally grown at 600 ° C. or lower) on a single crystal GaN substrate has already been proposed. (Japanese Patent Laid-Open No. 2000-340509).

The greatest advantage of using a single crystal nitride compound semiconductor substrate lies in that a high quality epitaxial layer can be obtained by inheriting the information as a crystal of a high quality single crystal substrate into the epitaxial layer. In such a method of inserting the amorphous layer between the single crystal substrate and the epitaxial layer, the advantage is lost.

On the other hand, when a nitride-based compound semiconductor is grown on a nitride-based compound semiconductor without interposing an amorphous buffer layer, information as a crystal contained in a high-quality single crystal substrate is used. , A high-quality epitaxial layer can be obtained by transferring it to the epitaxial layer, and in this case as well, as shown in the examples described later, the nitride-based The characteristics of the compound semiconductor growth layer and the flatness of the surface change significantly.

Therefore, an object of the present invention is to solve the above problems and to provide a nitride-based compound semiconductor layer on a substrate having a nitride-based compound semiconductor as an uppermost layer without interposing an amorphous buffer layer, It is an object of the present invention to provide a method of growing while controlling the characteristics and the flatness of the surface, and a semiconductor wafer and a semiconductor device obtained by the method.

[0014]

The inventors of the present invention designed a procedure for increasing the temperature of the substrate to a growth temperature to design a nitride compound on a substrate having a nitride compound semiconductor as the uppermost layer. It was found that the semiconductor layer can be grown while controlling the characteristics and the flatness of the surface, and came to the following conclusions.

(1) In order to obtain a nitride-based compound semiconductor layer having poor electrical and optical characteristics (that is, high resistance and low emission efficiency) suitable for a buffer layer of an electronic device and an optical device, a group III group is required. It is necessary to introduce the raw material into the reaction furnace after reaching a temperature 1 to 30 ° C. lower than the temperature at which steady growth is carried out, and more preferably a temperature at which steady growth is carried out. Also, by introducing the Group III source material into the reaction furnace at a temperature lower than the temperature at which it grows steadily by 300 ° C. or more, a nitride-based compound semiconductor layer having similarly poor electrical and optical characteristics can be obtained.

(2) In order to obtain a nitride-based compound semiconductor layer having good electrical and optical characteristics (that is, low resistance and high luminous efficiency), growth is constantly performed after the introduction of the group V raw material. It is necessary to introduce the Group III raw material into the reaction furnace after reaching a temperature 30 to 300 ° C. lower than the temperature to be performed, and more preferably a temperature 80 to 150 ° C. lower than the temperature at which steady growth is performed.

(3) In order to obtain a nitride-based compound semiconductor layer having a good surface flatness, it is necessary to introduce the group V raw material into the reaction furnace at a substrate temperature of 500 ° C. or lower.

(4) In order to obtain a nitride-based compound semiconductor layer having a surface unevenness of about 1 to 10 nm and having a high light extraction efficiency and suitable for a surface emitting type optical device, a substrate temperature of 500 to 800 ° C. It is necessary to introduce the group V raw material into the reaction furnace.

In the present invention, a nitride-based material is typically used.
Compound semiconductor is general formula, B_wAl_xIn _yGa_zN_aP_bAs_c
(W, x, y, z ≧ 0, w + x + y + z = 1, a> 0,
b, c ≧ 0, a + b + c = 1). How many
For example, BN, GaN, GaNAs, GaN
P, AlGaN, InGaN, InAlGaN, etc.
It

In the present invention, typically, a nitride compound semiconductor is vapor-grown by a metal organic chemical vapor deposition method (MOVPE method) or a hydride vapor phase epitaxy method (HVPE method).

According to the present invention configured as described above, the characteristics of the nitride compound semiconductor layer are controlled on the substrate having the nitride compound semiconductor as the uppermost layer without interposing the amorphous buffer layer. While providing a method of growing while controlling the surface flatness, a semiconductor wafer and a semiconductor device obtained by the method are provided.

Specifically, the present invention is configured as follows.

According to a first aspect of the present invention, there is provided a method for manufacturing a nitride-based compound semiconductor wafer comprising: a substrate having a nitride-based compound semiconductor single crystal layer as an uppermost layer; Without interposing a low temperature grown nitride compound semiconductor buffer layer grown at a temperature of 600 ° C. or less,
When vapor-depositing a nitride-based compound semiconductor laminated structure,
The introduction of Group V raw materials into the reactor was started first, and then III
It is characterized in that the flatness / electrical / optical characteristics of the nitride-based compound semiconductor laminated structure are controlled by starting the introduction of the group raw material.

According to a second aspect of the present invention, in the method for producing a nitride compound semiconductor wafer according to the first aspect, introduction of the group V raw material into the reaction furnace is started at a substrate temperature of 500 to 800 ° C. After that, the supply of the Group III raw material is started to obtain a nitride-based compound semiconductor layer having irregularities of about 1 to 10 nm on the surface.

According to a third aspect of the present invention, in the method for producing a nitride compound semiconductor wafer according to the first aspect, introduction of the group V raw material into the reaction furnace is started at a stage where the substrate temperature is room temperature to 500 ° C., After that, by starting the supply of Group III raw materials,
A feature is that a nitride-based compound semiconductor layer having good surface flatness is obtained.

According to a fourth aspect of the present invention, in the method for manufacturing a nitride compound semiconductor wafer according to the second or third aspect,
After the introduction of the group III raw material into the reaction furnace and after the introduction of the group V raw material, and the substrate temperature is lower than the substantial growth temperature of the nitride-based compound semiconductor laminated structure by 0 to 400 ° C. (the above-mentioned substantial growth temperature is 1100). (1100 ° C to 700 ° C when measured in ° C)
It is characterized in that the mobility and the photoluminescence emission intensity of the above-mentioned nitride-based compound semiconductor laminated structure are controlled by starting with.

According to a fifth aspect of the present invention, in the method for producing a nitride compound semiconductor wafer according to the second or third aspect,
After the introduction of the group III raw material into the reaction furnace and after the introduction of the group V raw material, the substrate temperature is lower than the substantial growth temperature of the nitride-based compound semiconductor laminated structure by 30 to 300 ° C. (the substantial growth temperature is 1100 1070 ° C to 800 ° C
It is characterized in that the mobility and the photoluminescence emission intensity of the nitride-based compound semiconductor laminated structure are controlled by starting at (° C.).

According to a sixth aspect of the present invention, in the method of manufacturing a nitride compound semiconductor wafer according to the second or third aspect,
After the introduction of the group III raw material into the reaction furnace and after the introduction of the group V raw material, and the substrate temperature is lower than the substantial growth temperature of the nitride-based compound semiconductor stacked structure by 80 to 150 ° C. (the substantial growth temperature is 1100 ℃ 1020 ℃ -950
It is characterized in that the mobility and the photoluminescence emission intensity of the nitride-based compound semiconductor laminated structure are controlled by starting at (° C.).

According to a seventh aspect of the present invention, in the method for manufacturing a nitride compound semiconductor wafer according to any one of the fourth to sixth aspects, the nitride compound semiconductor constituting the nitride compound semiconductor laminated structure is General formula, B _w Al _x In _y Ga _z N
_a P _b As _c (w, x, y, z ≧ 0, w + x + y + z =
1, a> 0, b, c ≧ 0, a + b + c = 1).

According to an eighth aspect of the present invention, in the method for manufacturing a nitride-based compound semiconductor wafer according to any one of the fourth to seventh aspects, the uppermost nitride-based compound semiconductor of the substrate has a general formula, B _{w. al x In y Ga z N a} P b As c (w, x, y,
z ≧ 0, w + x + y + z = 1, a> 0, b, c ≧ 0, a
+ B + c = 1).

The invention of claim 9 is a method of manufacturing a nitride-based compound semiconductor wafer according to any one of claims 4-7, said substrate general _{formula, B w Al x In y Ga} z N a P b A
s _c (w, x, y, z ≧ 0, w + x + y + z = 1, a>
0, b, c ≧ 0, a + b + c = 1), which is a nitride-based compound semiconductor single crystal.

According to a tenth aspect of the present invention, in the method for manufacturing a nitride compound semiconductor wafer according to any one of the fourth to seventh aspects, the substrate is a substrate made of a material other than a nitride compound semiconductor such as sapphire. To the general formula, B _w Al _x In
_{y Ga z N a P b As} c (w, x, y, z ≧ 0, w + x + y
+ Z = 1, a> 0, b, c ≧ 0, a + b + c = 1), and a nitride compound semiconductor single crystal layer is grown.

A nitride-based compound semiconductor wafer according to the invention of claim 11 uses the method for producing a nitride-based compound semiconductor wafer according to any one of the above-mentioned claims 1 to 10, and has a nitride-based compound semiconductor laminated structure. Has a structure including a layer having at least one conductivity type of n-type or p-type.

A nitride compound semiconductor device according to a twelfth aspect of the present invention is characterized by being manufactured using the nitride compound semiconductor wafer according to the eleventh aspect.

[0035]

BEST MODE FOR CARRYING OUT THE INVENTION Next, a method for manufacturing a nitride compound semiconductor wafer according to the present invention, and an embodiment of manufacturing a semiconductor wafer and a semiconductor device obtained by the method will be described with a focus on Examples. A MOVPE (metalorganic vapor phase epitaxy) apparatus was used as the growth apparatus in the following examples.

Example 1 In the following example, as shown in FIG. 2, an undoped GaN layer having a thickness of 2 μm at a high temperature is formed on a c-plane sapphire substrate 1 via a low temperature growth buffer layer 2 by MOVPE method. The structure obtained by growing 3 was used as the substrate 4. Specifically, the 0.25 degree off c-plane sapphire substrate 1 is put in the reaction furnace of the MOVPE apparatus, and 1200
After heat treatment at ℃, lower the substrate temperature to 500 ℃,
The GaN buffer layer 2 is grown to a thickness of 20 nm. Next, after raising the substrate temperature to 1100 ° C., an undoped GaN layer 3 is grown to 2 μm. Then, the substrate temperature was lowered to room temperature in an ammonia atmosphere, and the substrate was taken out from the growth apparatus.

Undoped Ga on the above sapphire substrate
Using N as a substrate, an undoped GaN layer 5 was grown on the substrate by the growth procedure shown in FIG. In FIG. 1, the substrate temperature and the supply of ammonia as a group V source and trimethylgallium (TMG) as a group III source are shown as a function of time.

The "substrate 4" is introduced into the reaction furnace of the MOVPE apparatus, and immediately after that, ammonia which is a group V raw material is introduced. Next, in the atmosphere of the previously introduced group V raw material, ammonia, it is heated to a substantial growth temperature of 1100 ° C. of the nitride-based compound semiconductor laminated structure. In the temperature rising process, when the substrate temperature reaches a certain temperature (Ts = 700 to 1100 ° C.), that is, at a stage (1100 ° C. to 700 ° C.) lower than the substantial growth temperature by 0 to 400 ° C. Starting supply of certain trimethylgallium TMG, undoped G
The growth of the aN layer 5 is started.

At this time, the hydrogen flow rate was 10 mol / min, the ammonia flow rate was 0.4 mol / min, and the TMG flow rate was 180 μmol / min. Undoped Ga in this case
The growth rate of N is 3600 nm / hour, and the growth time is 3
An undoped GaN layer 5 having a thickness of 1800 nm was grown for 0 minutes. That is, 30 minutes after the start of growth, the supply of trimethylgallium TMG, which is a Group III raw material, was stopped, and the substrate temperature was lowered to room temperature while maintaining the ammonia atmosphere as it was.

The samples grown under the above conditions all had a highly flat surface.

FIG. 3 shows the band edge photoluminescence (PL) emission intensity of the above sample at room temperature as a function of Ts. Ts = 950 to 1020 ° C. (Substrate temperature is substantially the growth temperature 110 of the undoped GaN layer 5)
The maximum photoluminescence (PL) emission intensity is obtained when the introduction of trimethylgallium TMG, which is a group III raw material, into the reaction furnace is started at a temperature lower than 0 ° C. by 80 to 150 ° C.). Further, even in the range of Ts = 800 to 950 ° C. or Ts = 1020 to 1070 ° C., the maximum value of 1
A PL intensity of about / 10 has been obtained. Ts <800 ℃
(Temperature lower than 300 ° C lower than 1100 ° C)
Alternatively, at Ts> 1070 ° C. (higher than the temperature value 30 ° C. lower than 1100 ° C.), the PL intensity was very weak.

Example 2 A silicon-doped GaN layer was grown on the “substrate 4” under the same conditions as in Example 1. The electron mobility obtained by hole measurement of this silicon-doped GaN layer is shown in FIG. 4 as a function of Ts. Ts = 950
1020 ℃ range (effective growth temperature from 1100 ℃ to 8
Maximum electron mobility of about 60 in low temperature range of 0-150 ℃
It shows 0 cm ² / Vs. In the range of Ts = 800 to 950 ° C. and the range of 1020 to 1070 ° C., although there was some decrease in the mobility of the sample, it was still conductive.

On the other hand, Ts <800 ° C. (1100
Temperature lower than 300 ° C lower temperature value) or
Samples grown with Ts> 1070 ° C. (higher than 30 ° C. below 1100 ° C.) showed high resistance. The sample grown in the range of Ts = 950 to 1020 ° C. (80 to 150 ° C. lower than the substantial growth temperature 1100 ° C.) is suitable as an active layer of a transistor or the like. Also, Ts <800 ° C. or Ts> 1070
The high resistance layer grown at ℃ can be used for the purpose of electrical isolation between devices.

<Example 3> In the growth procedure of FIG.
The starting temperature for introducing trimethylgallium (TMG), which is a group I raw material, into the reaction furnace is kept constant at 1000 ° C, and the temperature (Tv) for introducing ammonia, which is a group V raw material, is changed from room temperature to 1000 ° C. The other conditions are in Example 1.
In the same manner as above, undoped GaN was grown.

The rms value of the roughness of these sample surfaces was measured using an atomic force microscope and a surface roughness meter, and
It is shown in FIG. 5 as a function of the introduction temperature Tv of ammonia. T
When v ≦ 500 ° C., the rms value of the roughness of the sample surface is 0.
It is about 5 nm and is very flat. The introduction temperature Tv of the group V raw material ammonia into the reaction furnace is Tv = 500
Surface flatness gradually deteriorates between ~ 800 ° C and Tv>
In 800, the rms value of the surface roughness is about 10 nm.

That is, in the present invention, in order to obtain a flat nitride-based compound semiconductor surface, the temperature Tv at which the group V source material is introduced into the reaction furnace must be Tv ≦ 500 ° C. Further, the temperature Tv for introducing the group V raw material into the reaction furnace is set to 500 to 80
Rms of surface roughness by varying between 0 ° C
The value can be controlled between 1 and 10 nm.

<Embodiment 4> FIG. 6 shows the structure of a light emitting diode (LED) using a semiconductor wafer according to the present invention. A silicon-doped n-GaN layer 5 was grown at 1100 ° C. on the “substrate 4” described in Example 2, and a silicon-doped n-InGaN layer 6 was formed at a low temperature of 800 at 800.
The growth temperature was raised again to 1100 ° C. to grow the p-GaN layer 7.

RIE (Reacti
ve Ion Etching) to partially remove n-GaN
Part of the layer 5 is exposed and a Ti / Al electrode 8 is formed on the exposed part, while Ni / Au is formed on the surface of the p-GaN layer 7.
The electrode 9 was formed.

The light emission output of the LED having the structure including the regrowth on the "substrate 4" of the above-mentioned Example 4 and the LED using the structure formed by continuous growth on the sapphire substrate as in the conventional case are targeted. Was measured, the average light output at the time of passing a current of 20 mA was 5 mW in the LED having the configuration of Example 4, whereas it was 3 mW in the LED using the semiconductor wafer by the conventional continuous growth.

Since this is the average of a large number of LED chips, there was such a difference, but when comparing the obtained maximum optical outputs, both were equivalent to 7 mW. In the LED having the structure of Example 4 using the semiconductor wafer according to the present invention, the LED using the semiconductor wafer by the conventional continuous growth is used.
Since the variation of the light output is smaller than that of the above, the average value of the light output has such a difference.

That is, in the LED having the structure of the fourth embodiment,
The variation of LED characteristics can be made smaller than before, and moreover,
The LED characteristics are similar to those of conventional LEDs.

[0052]

As described above, according to the method for manufacturing a nitride compound semiconductor wafer according to the present invention, V
By starting the introduction of the group raw material into the reaction furnace, and then starting the introduction of the group III raw material, in a form without interposing the amorphous buffer layer, onto the substrate having a nitride-based compound semiconductor in the uppermost layer, A high-quality nitride-based compound semiconductor layer or a high-resistance nitride-based compound semiconductor layer with low luminous efficiency can be grown while controlling the characteristics and maintaining a flat surface.

[Brief description of drawings]

FIG. 1 is a diagram showing a growth procedure according to a method for manufacturing a nitride-based compound semiconductor wafer according to the present invention.

FIG. 2 is a cross-sectional view of a substrate and a nitride-based compound semiconductor laminated structure thereon for explaining a method for manufacturing a nitride-based compound semiconductor wafer according to the present invention.

FIG. 3 is a diagram showing the relationship between the band edge emission intensity of the GaN layer and the group III source material introduction temperature Ts, which is the basis of Example 1 of the present invention.

FIG. 4 is a diagram showing the relationship between the mobility of an n-GaN layer and the group III source material introduction temperature Ts, which is the basis of Example 2 of the present invention.

FIG. 5 is a diagram showing the relationship between the surface roughness rms value of a GaN layer and the group V source material introduction temperature Tv, which is the basis of Example 3 of the present invention.

FIG. 6 is a sectional view showing a structure of a semiconductor device according to the present invention.

[Explanation of symbols]

1 sapphire substrate 2 Low temperature growth buffer layer 3 Undoped GaN layer 4 substrates 5 GaN layer 6 InGaN layer 7 GaN layer 8, 9 electrodes

   ─────────────────────────────────────────────────── ─── Continued front page    (72) Inventor Kazuyuki Iizuka             1-6-1, Otemachi, Chiyoda-ku, Tokyo             Standing Wire Co., Ltd. F term (reference) 4G077 AA03 BE15 DB08 ED06 EE06                       EF02 HA02 TA04 TB05 TC11                       TK08                 5F041 AA40 CA34 CA40 CA46 CA65                 5F045 AA04 AB14 AC08 AC12 AD11                       AD12 AD13 AD14 AD15 AF04                       BB01 BB07 BB16 CA09 DA53                       DA57 EE00 EE12 EK26                 5F073 CA07 CB05 DA05 DA35 EA29

Claims (12)

[Claims] 1. A low-temperature-grown nitride system grown on a substrate having a nitride-based compound semiconductor single crystal layer as an uppermost layer and at a temperature of 600 ° C. or lower between the substrate and the nitride-based compound semiconductor laminated structure on the substrate. When vapor-depositing a nitride-based compound semiconductor laminated structure without interposing a compound semiconductor buffer layer, introduction of a group V raw material into a reaction furnace is started first, and then III
A method for producing a nitride-based compound semiconductor wafer, comprising controlling the flatness, electrical and optical characteristics of the nitride-based compound semiconductor laminated structure by starting introduction of a group-based material. 2. The introduction of the group V raw material into the reaction furnace is started at a substrate temperature of 500 to 800 ° C., and then the supply of the group III raw material is started to form irregularities of about 1 to 10 nm on the surface. The method for producing a nitride-based compound semiconductor wafer according to claim 1, wherein the nitride-based compound semiconductor layer is obtained. 3. A nitride system having good surface flatness by starting the introduction of the group V raw material into the reaction furnace at a stage where the substrate temperature is room temperature to 500 ° C. and then starting the supply of the group III raw material. The method for producing a nitride compound semiconductor wafer according to claim 1, wherein a compound semiconductor layer is obtained. 4. The introduction of the group III raw material into the reaction furnace is started after the introduction of the group V raw material and at a stage where the substrate temperature is 0 to 400 ° C. lower than the substantial growth temperature of the nitride compound semiconductor laminated structure. The method for producing a nitride compound semiconductor wafer according to claim 2 or 3, wherein the mobility and the photoluminescence emission intensity of the nitride compound semiconductor laminated structure are controlled thereby. 5. The introduction of the group III raw material into the reaction furnace is started after the introduction of the group V raw material and at a stage where the substrate temperature is lower than the substantial growth temperature of the nitride compound semiconductor laminated structure by 30 to 300 ° C. The method for producing a nitride compound semiconductor wafer according to claim 2 or 3, wherein the mobility and the photoluminescence emission intensity of the nitride compound semiconductor laminated structure are controlled thereby. 6. The introduction of the group III raw material into the reaction furnace is started after the introduction of the group V raw material and at a stage where the substrate temperature is lower than the substantial growth temperature of the nitride-based compound semiconductor laminated structure by 80 to 150 ° C. The method for producing a nitride compound semiconductor wafer according to claim 2 or 3, wherein the mobility and the photoluminescence emission intensity of the nitride compound semiconductor laminated structure are controlled thereby. 7. The nitride-based compound semiconductor constituting the nitride-based compound semiconductor laminated structure has a general formula of B _w AlxIn _{y.
Ga z N a P b As c} (w, x, y, z ≧ 0, w + x + y +
z = 1, a> 0, b, c ≧ 0, a + b + c = 1)), The method for producing a nitride-based compound semiconductor wafer according to claim 4, wherein 8. A nitride-based compound semiconductor as an uppermost layer of the substrate
Is the general formula, B_wAl_xIn_yGa_zN _aP_bAs_c(W,
x, y, z ≧ 0, w + x + y + z = 1, a> 0, b, c
≧ 0, a + b + c = 1)
8. The nitride-based compound semiconductor device according to any one of claims 4 to 7.
Manufacturing method. 9. The substrate is of the general formula: B _w Al _x In _y Ga _z N
_a P _b As _c (w, x, y, z ≧ 0, w + x + y + z =
1, a> 0, b, c ≧ 0, a + b + c = 1), which is a nitride-based compound semiconductor single crystal. 8. The nitride-based compound semiconductor according to claim 4, wherein Wafer manufacturing method. 10. A substrate of the general formula, B _w A, on which the substrate is made of a material other than a nitride compound semiconductor such as sapphire.
_{l x In y Ga z N a} P b As c (w, x, y, z ≧ 0, w +
x + y + z = 1, a> 0, b, c ≧ 0, a + b + c =
8. The method for manufacturing a nitride compound semiconductor wafer according to claim 4, wherein the nitride compound semiconductor single crystal layer represented by 1) is grown. 11. The method for manufacturing a nitride compound semiconductor wafer according to claim 1, wherein the nitride compound semiconductor laminated structure has at least one of n-type and p-type. A nitride compound semiconductor wafer having a structure including a layer having a conductivity type. 12. A nitride-based compound semiconductor device manufactured by using the nitride-based compound semiconductor wafer according to claim 11.