CN106098871B - Preparation method of light-emitting diode epitaxial wafer - Google Patents
Preparation method of light-emitting diode epitaxial wafer Download PDFInfo
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- 238000002360 preparation method Methods 0.000 title claims abstract description 32
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 61
- 230000007704 transition Effects 0.000 claims abstract description 41
- 238000010438 heat treatment Methods 0.000 claims abstract description 19
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims description 8
- 230000004888 barrier function Effects 0.000 claims description 4
- 239000007789 gas Substances 0.000 claims description 2
- 235000012431 wafers Nutrition 0.000 abstract description 29
- 238000004519 manufacturing process Methods 0.000 abstract description 9
- 239000004065 semiconductor Substances 0.000 abstract description 2
- 230000000903 blocking effect Effects 0.000 abstract 1
- 239000013078 crystal Substances 0.000 description 16
- 239000011777 magnesium Substances 0.000 description 11
- 238000010792 warming Methods 0.000 description 7
- 238000000151 deposition Methods 0.000 description 6
- 238000010586 diagram Methods 0.000 description 6
- 238000000034 method Methods 0.000 description 6
- 230000007547 defect Effects 0.000 description 5
- 230000008901 benefit Effects 0.000 description 4
- 239000000243 solution Substances 0.000 description 4
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 3
- 238000002425 crystallisation Methods 0.000 description 3
- 230000008025 crystallization Effects 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000012634 fragment Substances 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 229910052751 metal Inorganic materials 0.000 description 2
- 239000002184 metal Substances 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000407 epitaxy Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
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- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
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- 230000009467 reduction Effects 0.000 description 1
- 229910000077 silane Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Led Devices (AREA)
Abstract
The invention discloses a preparation method of a light-emitting diode epitaxial wafer, and belongs to the technical field of semiconductors. The preparation method comprises the following steps: raising the temperature to carry out heat treatment on the substrate in a pure hydrogen atmosphere; reducing the temperature to deposit a buffer layer; heating in multiple stages, and growing a transition layer, wherein the transition layer is an AlGaN layer which is firstly converted into three-dimensional growth and then converted into two-dimensional growth from two-dimensional growth, the growth pressure of the same AlGaN layer is constant, the growth pressures of at least two AlGaN layers are reduced along with the increase of time, the temperature of the same stage is constant, and the temperatures of different stages are increased along with the increase of time; raising the temperature to deposit an undoped GaN layer; growing an N-type layer; alternately growing InGaN layers and GaN layers to form a multi-quantum well layer; growing a P-type electron blocking layer; growing a P-type layer; and growing a P-type contact layer. The invention is suitable for the production of large-size epitaxial wafers.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of preparation method of LED epitaxial slice.
Background technique
Light emitting diode (Light Emitting Diodes, abbreviation LED) is with small in size, various colors are colorful, use
The advantages that service life is long is the new product of great influence power in information photoelectron new industry, be widely used in illumination, display screen,
The fields such as signal lamp, backlight, toy.
With the continuous improvement of human cost, gradually oversize epitaxy technique (is greater than 2 inches for LED chip manufacturer
Epitaxial wafer) development, to improve production efficiency, (such as 6 inches of epitaxial wafers are the 3-4 of 2 times, 3 inches epitaxial wafers of 4 inches of epitaxial wafers
Again, 8-9 times of 2 inches of epitaxial wafers), reduce production cost.
In the implementation of the present invention, the inventor finds that the existing technology has at least the following problems:
There are lattice constants and coefficient of thermal expansion mismatch between GaN base epitaxial wafer and Sapphire Substrate, compare stock size
Epitaxial wafer (2 inches), large-size epitaxial wafer can generate more dislocations and defect, luminous efficiency to LED component and antistatic
Ability causes adverse effect.
Summary of the invention
In order to solve the problems, such as that the prior art generates dislocation and defect, the embodiment of the invention provides a kind of light emitting diodes
The preparation method of epitaxial wafer.The technical solution is as follows:
The embodiment of the invention provides a kind of preparation method of LED epitaxial slice, the preparation method includes:
Temperature is increased to be heat-treated substrate under pure hydrogen atmosphere；
Reduce temperature deposition buffer layer；
The heating in multiple stages, regrowth transition zone are carried out, the transition zone is first to switch to three dimensional growth from two-dimensional growth
Switch to the AlGaN layer of two-dimensional growth again, the growth pressure of AlGaN layer described in same layer is constant, at least two layers AlGaN layer
Growth pressure reduces over time, and the temperature in the same stage is constant, and the temperature in the different stages is at any time
Growth and increase；
Increase the undoped GaN layer of temperature deposition；
The GaN layer of growth doping Si, forms N-type layer；
Alternating growth InGaN layer and GaN layer form multiple quantum well layer；
The AlGaN layer of growth doping Mg, forms P-type electron barrier layer；
The GaN layer of growth doping Mg, forms P-type layer；
The GaN layer of growth doping Mg, forms p-type contact layer, and the thickness of the p-type contact layer is less than the thickness of the P-type layer
Degree.
Optionally, the growth pressure of all AlGaN layers reduces over time in the transition zone.
Optionally, the growth pressure of all AlGaN layers reduces rise again over time and first in the transition zone
It is high.
Optionally, the growth pressure of all AlGaN layers is divided into two kinds in the transition zone, the institute of two kinds of growth pressures
State the alternately laminated formation transition zone of AlGaN layer.
Optionally, all AlGaN layers are divided at least two groups in the transition zone, and every group includes at least three kinds growth pressures
The AlGaN layer of power, the growth pressure of all AlGaN layers reduces over time in every group.
Optionally, all AlGaN layers are divided at least two groups in the transition zone, and every group includes at least three kinds growth pressures
The AlGaN layer of power, the growth pressure of all AlGaN layers reduces over time and first in every group increases again.
Optionally, the AlGaN layer with a thickness of 10~500nm.
Optionally, the thickness of the transition zone is less than or equal to 1.5 μm.
Optionally, substrate is heat-treated by the raising temperature under pure hydrogen atmosphere, comprising:
The heating in multiple stages is carried out, then the substrate is heat-treated under pure hydrogen atmosphere, the same stage
Temperature it is constant, and the temperature in the different stage increases over time.
Optionally, the size of the substrate is 3 inches, 4 inches, 6 inches, 8 inches or 2 inches.
Technical solution provided in an embodiment of the present invention has the benefit that
First switch to three dimensional growth from two-dimensional growth by that will be formed and switch at least two in the multilayer AlGaN layer of two-dimensional growth again
The growth pressure of layer AlGaN layer reduces over time, and the longitudinal growth for being conducive to crystal using high pressure is (i.e. three-dimensional raw
It is long), low pressure is conducive to the cross growth (i.e. two-dimensional growth) of crystal, and make the crystal grain of buffer layer under the multiple crystallization of transition zone,
Slowly become larger to form island core since monocrystalline, the line dislocation density and V-type dislocation for effectively reducing bottom extend to Quantum Well, favorably
Stress is discharged when epitaxial growth bottom, improves the growth quality of bottom when building crystals growth, is that the growth of subsequent Quantum Well improves
Good bottom condition, is conducive to the radiation recombination of hole and electronics, the luminous efficiency of LED is improved, especially suitable for large scale
The production of epitaxial wafer.And the heating in multiple stages is first carried out, the temperature of same stage is constant, and the temperature of different phase is at any time
Between growth and increase, thermal field is stable, is heated evenly, and is conducive to the uniformity and stability of bottom thermal field, reduces because of thermal expansion
Tensile stress caused by the difference of coefficient alleviates the stress that lattice mismatch generates, improves the angularity of epitaxial wafer, reduces epitaxial wafer
Dislocation and defect concentration, improve crystal quality, improve the injection efficiency in hole and the luminous efficiency of device, reduce fragment rate,
Adapt to the production of large-size epitaxial wafer.
Detailed description of the invention
To describe the technical solutions in the embodiments of the present invention more clearly, make required in being described below to embodiment
Attached drawing is briefly described, it should be apparent that, drawings in the following description are only some embodiments of the invention, for
For those of ordinary skill in the art, without creative efforts, it can also be obtained according to these attached drawings other
Attached drawing.
Fig. 1 is a kind of flow chart of the preparation method for LED epitaxial slice that the embodiment of the present invention one provides；
Fig. 2 a is the schematic diagram that the temperature rate that the embodiment of the present invention one provides remains unchanged；
Fig. 2 b is the schematic diagram that the temperature rate that the embodiment of the present invention one provides is gradually reduced；
Fig. 2 c is the schematic diagram that the temperature rate that the embodiment of the present invention one provides is gradually increased；
Fig. 3 is a kind of flow chart of the preparation method of LED epitaxial slice provided by Embodiment 2 of the present invention；
Fig. 4 is the schematic diagram of transition zone growth pressure variation provided by Embodiment 2 of the present invention；
Fig. 5 is the schematic diagram for the transition zone growth pressure variation that the embodiment of the present invention three provides；
Fig. 6 is the schematic diagram for the transition zone growth pressure variation that the embodiment of the present invention four provides.
Specific embodiment
To make the object, technical solutions and advantages of the present invention clearer, below in conjunction with attached drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
The embodiment of the invention provides a kind of preparation methods of LED epitaxial slice, referring to Fig. 1, the preparation method packet
It includes:
Step 101: increasing temperature and be heat-treated substrate under pure hydrogen atmosphere.
Optionally, which may include:
The heating in multiple stages is carried out, then substrate is heat-treated under pure hydrogen atmosphere.
In the present embodiment, the temperature of same stage is constant, and the temperature of different phase increases over time.
Optionally, the increase rate of the temperature of different phase can remain unchanged (as shown in Figure 2 a), be gradually reduced (as schemed
Shown in 2b) or gradually rise (as shown in Figure 2 c).
Optionally, the difference of the temperature in two neighboring stage can be set according to the requirement of epitaxial growth, to choose matching
The optimal value of epitaxial wafer growth.
Preferably, the difference of the temperature in two neighboring stage can be definite value.
Preferably, the difference of the temperature in two neighboring stage can be different.
Optionally, the time that each stage occupies can set according to the requirement of epitaxial growth, to choose matching epitaxial wafer
The optimal value of growth.
Preferably, the time that each stage occupies can be definite value.
Preferably, the time that each stage occupies can be different.
Specifically, the size of substrate can be 3 inches, 4 inches, 6 inches, 8 inches or 2 inches.
Specifically, the material of substrate can be using any in sapphire, Si, SiC, GaN, AlN, ZnO, GaAs, metal
Kind.
It should be noted that the purpose of heat treatment is cleaning substrate surface.
Step 102: reducing temperature deposition buffer layer.
Step 103: carrying out the heating in multiple stages, regrowth transition zone.
In the present embodiment, transition zone is first to switch to the multilayer that three dimensional growth switchs to two-dimensional growth again from two-dimensional growth
AlGaN layer.The growth pressure of same layer AlGaN layer is constant, and the growth pressure of at least two layers AlGaN layer drops over time
It is low.The temperature of same stage is constant, and the temperature of different phase increases over time.Specifically, AlGaN layer is
AlxGa1-xN layers, 0≤x≤1.
Optionally, the increase rate of the temperature of different phase can remain unchanged (as shown in Figure 2 a), be gradually reduced (as schemed
Shown in 2b) or gradually rise (as shown in Figure 2 c).
Optionally, the difference of the temperature in two neighboring stage can be set according to the requirement of epitaxial growth, to choose matching
The optimal value of epitaxial wafer growth.
Preferably, the difference of the temperature in two neighboring stage can be definite value.
Preferably, the difference of the temperature in two neighboring stage can be different.
Optionally, the time that each stage occupies can set according to the requirement of epitaxial growth, to choose matching epitaxial wafer
The optimal value of growth.
Preferably, the time that each stage occupies can be definite value.
Preferably, the time that each stage occupies can be different.
It should be noted that carrying out the mode of the heating in multiple stages before heat treatment and being carried out before growing transition zone more
The mode of the heating in a stage may be the same or different.For example, carrying out the rate of the heating in multiple stages before heat treatment
It gradually rises, the rate for the heating for carrying out multiple stages before growth transition zone remains unchanged.
In a kind of implementation of the present embodiment, the growth pressure of all AlGaN layers can at any time in transition zone
Increase and reduces.
In another implementation of the present embodiment, the growth pressure of all AlGaN layers can be at any time in transition zone
Growth and first reduce and increase again.
In another implementation of the present embodiment, the growth pressure of all AlGaN layers can be divided into two in transition zone
Kind, the alternately laminated formation transition zone of the AlGaN layer of two kinds of growth pressures.
In another implementation of the present embodiment, all AlGaN layers can be divided at least two groups in transition zone, and every group
AlGaN layer including at least three kinds growth pressures, the growth pressure of all AlGaN layers reduces over time in every group.
In another implementation of the present embodiment, all AlGaN layers can be divided at least two groups in transition zone, and every group
AlGaN layer including at least three kinds growth pressures, the growth pressure of all AlGaN layers reduces over time and first in every group
It increases again.
Optionally, the thickness of AlGaN layer can be 10~500nm.
Optionally, the thickness of transition zone can be less than or equal to 1.5 μm.
Step 104: increasing the undoped GaN layer of temperature deposition.
Step 105: the GaN layer of growth doping Si forms N-type layer.
Step 106: alternating growth InGaN layer and GaN layer form multiple quantum well layer.
Step 107: the AlGaN layer of growth doping Mg forms P-type electron barrier layer.
Step 108: the GaN layer of growth doping Mg forms P-type layer.
Step 109: the GaN layer of growth doping Mg forms p-type contact layer.
In the present embodiment, the thickness of p-type contact layer is less than the thickness of P-type layer.
In practical applications, can also other layers in epitaxial wafer in addition to transition zone first be carried out with the temperature in multiple stages
Adjust regrowth, such as undoped GaN layer.Specifically, which may include: to carry out the heating in multiple stages, redeposited non-
The temperature of doped gan layer, same stage is constant, and the temperature of different phase increases over time.
The embodiment of the present invention first switchs to the multilayer that three dimensional growth switchs to two-dimensional growth again from two-dimensional growth by that will be formed
The growth pressure of at least two layers AlGaN layer reduces over time in AlGaN layer, is conducive to the longitudinal direction of crystal using high pressure
It grows (i.e. three dimensional growth), low pressure is conducive to the cross growth (i.e. two-dimensional growth) of crystal, makes the crystal grain of buffer layer in transition zone
Multiple crystallization under, slowly become larger to form island core since monocrystalline, effectively reduce the line dislocation density and V-type dislocation vector of bottom
Sub- trap extends, and is conducive to discharge stress when epitaxial growth bottom, improves the growth quality of bottom when building crystals growth, is subsequent quantum
The growth of trap improves good bottom condition, is conducive to the radiation recombination of hole and electronics, improves the luminous efficiency of LED, especially
Production suitable for large-size epitaxial wafer.And the heating in multiple stages is first carried out, the temperature of same stage is constant, and not same order
The temperature of section increases over time, and thermal field is stable, is heated evenly, and is conducive to the uniformity and stability of bottom thermal field,
The tensile stress because of caused by the difference of thermal expansion coefficient is reduced, alleviates the stress that lattice mismatch generates, improves the warpage of epitaxial wafer
Degree reduces the dislocation and defect concentration of epitaxial wafer, improves crystal quality, improves the injection efficiency in hole and the luminous effect of device
Rate reduces fragment rate, adapts to the production of large-size epitaxial wafer.
Embodiment two
The embodiment of the invention provides a kind of preparation method of LED epitaxial slice, preparation side provided in this embodiment
Method is the specific implementation for the preparation method that embodiment one provides.In embodiment, with high-purity hydrogen (H2) or nitrogen (N2) as load
Gas, with trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH3) respectively as Ga, Al, In,
The source N, using silane (SiH4), two luxuriant magnesium (Cp2Mg) respectively as N-type, P-type dopant.Referring to Fig. 3, which includes:
Step 201: substrate being first warming up to 500 DEG C, then is warming up to 800 DEG C and stablizes 30s, then is warming up to 1000 DEG C and steady
Determine 30s, then be warming up to 1300 DEG C and stablize 10min, is heat-treated under pure hydrogen atmosphere.
Step 202: reducing temperature to 625 DEG C or 540 DEG C, the GaN layer that deposition a layer thickness is 30nm forms buffer layer.
Step 203: being first warming up to 800 DEG C and stablize 30s, then be warming up to 1000 DEG C and stablize 30s, then be warming up to 1205 DEG C
And stablizes 300s, the AlGaN layer of one layer of 100nm is alternately grown under the pressure of 900mbar and grown under the pressure of 300mbar
The AlGaN layer (as shown in Figure 4) of one layer of 100nm forms transition zone.
In the present embodiment, transition zone includes 10 layers of AlGaN layer.
Step 204: raising temperature is to 1255 DEG C, the undoped GaN layer that deposition thickness is 1.5 μm.
Step 205: the GaN layer for the doping Si that growth thickness is 2 μm forms N-type layer.
Step 206: 8 layers of InGaN layer of alternating growth and 8 layers of GaN layer form multiple quantum well layer.
In the present embodiment, InGaN layer with a thickness of 3nm, the growth temperature of InGaN layer is 880 DEG C；The thickness of GaN layer
For 12nm, the growth temperature of GaN layer is 960 DEG C.It should be noted that be easy to volatilize at high temperature since In is temperature sensitive,
For the ease of the growth of In, the growth temperature of InGaN layer wants lower, and GaN layer requires crystal quality to get well, therefore temperature is wanted
It is appropriate high.
Step 207: 970 DEG C at a temperature of, grow 50nm doping Mg AlGaN layer, formed P-type electron barrier layer.
Step 208: 1090 DEG C at a temperature of, grow 200nm growth doping Mg GaN layer, formed P-type layer.
Step 209: 1120 DEG C at a temperature of, grow 10nm growth doping Mg GaN layer, formed p-type contact layer.
In the present embodiment, the thickness of p-type contact layer is less than the thickness of P-type layer.
It should be noted that above-mentioned steps can be realized using equipment of metal organic chemical vapor deposition, epitaxial growth knot
Shu Hou cleans the epitaxial wafer of growth, is deposited, the semiconducter process such as lithography and etching, that is, can be made into single chip.
The embodiment of the present invention first switchs to the multilayer that three dimensional growth switchs to two-dimensional growth again from two-dimensional growth by that will be formed
The growth pressure of at least two layers AlGaN layer reduces over time in AlGaN layer, is conducive to the longitudinal direction of crystal using high pressure
It grows (i.e. three dimensional growth), low pressure is conducive to the cross growth (i.e. two-dimensional growth) of crystal, makes the crystal grain of buffer layer in transition zone
Multiple crystallization under, slowly become larger to form island core since monocrystalline, effectively reduce the line dislocation density and V-type dislocation vector of bottom
Sub- trap extends, and is conducive to discharge stress when epitaxial growth bottom, improves the growth quality of bottom when building crystals growth, is subsequent quantum
The growth of trap improves good bottom condition, is conducive to the radiation recombination of hole and electronics, improves the luminous efficiency of LED, especially
Production suitable for large-size epitaxial wafer.And the heating in multiple stages is first carried out, the temperature of same stage is constant, and not same order
The temperature of section increases over time, and thermal field is stable, is heated evenly, and is conducive to the uniformity and stability of bottom thermal field,
The tensile stress because of caused by the difference of thermal expansion coefficient is reduced, alleviates the stress that lattice mismatch generates, improves the warpage of epitaxial wafer
Degree reduces the dislocation and defect concentration of epitaxial wafer, improves crystal quality, improves the injection efficiency in hole and the luminous effect of device
Rate reduces fragment rate, adapts to the production of large-size epitaxial wafer.
Embodiment three
The embodiment of the invention provides a kind of preparation method of LED epitaxial slice, preparation side provided in this embodiment
Preparation method that method and embodiment two provide the difference is that, in transition zone the growth pressure of each layer AlGaN layer from
900mbar starts, one layer of reduction 100mbar (as shown in Figure 5).
Example IV
The embodiment of the invention provides a kind of preparation method of LED epitaxial slice, preparation side provided in this embodiment
Preparation method that method and embodiment two provide the difference is that, the growth pressure of each layer AlGaN layer is from most intermediate
250mbar starts, one layer of both sides raising 250mbar (as shown in Figure 6).
The serial number of the above embodiments of the invention is only for description, does not represent the advantages or disadvantages of the embodiments.
The foregoing is merely presently preferred embodiments of the present invention, is not intended to limit the invention, it is all in spirit of the invention and
Within principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
Claims (10)
1. a kind of preparation method of LED epitaxial slice, which is characterized in that the preparation method includes:
Temperature is increased to be heat-treated substrate under pure hydrogen atmosphere；
Reduce temperature deposition buffer layer；
The heating in multiple stages, regrowth transition zone are carried out, the transition zone is first to switch to three dimensional growth from two-dimensional growth to turn again
For the AlGaN layer of two-dimensional growth, the growth pressure of AlGaN layer described in same layer is constant, the growth of at least two layers AlGaN layer
Pressure reduces over time, and the temperature in the same stage is constant, and the increasing of the temperature in the different stages at any time
It grows and increases；
Increase the undoped GaN layer of temperature deposition；
The GaN layer of growth doping Si, forms N-type layer；
Alternating growth InGaN layer and GaN layer form multiple quantum well layer；
The AlGaN layer of growth doping Mg, forms P-type electron barrier layer；
The GaN layer of growth doping Mg, forms P-type layer；
The GaN layer of growth doping Mg, forms p-type contact layer, and the thickness of the p-type contact layer is less than the thickness of the P-type layer.
2. preparation method according to claim 1, which is characterized in that the life of all AlGaN layers in the transition zone
Long pressure reduces over time.
3. preparation method according to claim 1, which is characterized in that the life of all AlGaN layers in the transition zone
Long pressure reduces over time and first to be increased again.
4. preparation method according to claim 1, which is characterized in that the life of all AlGaN layers in the transition zone
Long pressure is divided into two kinds, and the AlGaN layer of two kinds of growth pressures is alternately laminated to form the transition zone.
5. preparation method according to claim 1, which is characterized in that all AlGaN layers are divided into the transition zone
At least two groups, every group include at least three kinds growth pressures the AlGaN layer, the growth pressure of all AlGaN layers in every group
Power reduces over time.
6. preparation method according to claim 1, which is characterized in that all AlGaN layers are divided into the transition zone
At least two groups, every group include at least three kinds growth pressures the AlGaN layer, the growth pressure of all AlGaN layers in every group
Power reduces increase again over time and first.
7. preparation method according to claim 1-6, which is characterized in that the AlGaN layer with a thickness of 10~
500nm。
8. preparation method according to claim 1-6, which is characterized in that the thickness of the transition zone is less than or waits
In 1.5 μm.
9. preparation method according to claim 1-6, which is characterized in that the raising temperature is by substrate in pure hydrogen
It is heat-treated under gas atmosphere, comprising:
The heating in multiple stages is carried out, then the substrate is heat-treated under pure hydrogen atmosphere, the temperature in the same stage
Spend constant, and the temperature in the different stage increases over time.
10. preparation method according to claim 1-6, which is characterized in that the size of the substrate is 3 inches, 4
Inch, 6 inches, 8 inches or 2 inches.
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| CN109300854B (en) * | 2018-10-17 | 2020-06-19 | 湘能华磊光电股份有限公司 | LED epitaxial wafer growth method |
| CN109545926A (en) * | 2018-11-30 | 2019-03-29 | 华灿光电（浙江）有限公司 | A kind of LED epitaxial slice and its manufacturing method |
| CN109920722B (en) * | 2019-01-28 | 2021-04-27 | 华灿光电（浙江）有限公司 | GaN-based light emitting diode epitaxial wafer, preparation method thereof and light emitting diode |
| CN110335923A (en) * | 2019-06-21 | 2019-10-15 | 山东浪潮华光光电子股份有限公司 | A kind of multi-quantum pit structure, LED epitaxial wafer and preparation method thereof |
| CN111933761B (en) * | 2020-07-23 | 2022-04-26 | 厦门士兰明镓化合物半导体有限公司 | Epitaxial structure and manufacturing method thereof |
| CN112750925B (en) * | 2020-12-31 | 2022-04-08 | 广东省科学院半导体研究所 | Deep ultraviolet LED device structure and preparation method thereof |
| CN112802929A (en) * | 2021-02-05 | 2021-05-14 | 华灿光电（浙江）有限公司 | Epitaxial wafer of light emitting diode and preparation method thereof |
| CN113363362B (en) * | 2021-06-02 | 2023-08-25 | 福建兆元光电有限公司 | Method for growing epitaxial structure on substrate and epitaxial structure |
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