CN106098871A - A kind of preparation method of LED epitaxial slice - Google Patents
A kind of preparation method of LED epitaxial slice Download PDFInfo
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- CN106098871A CN106098871A CN201610591175.3A CN201610591175A CN106098871A CN 106098871 A CN106098871 A CN 106098871A CN 201610591175 A CN201610591175 A CN 201610591175A CN 106098871 A CN106098871 A CN 106098871A
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- 238000002360 preparation method Methods 0.000 title claims abstract description 33
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 60
- 230000007704 transition Effects 0.000 claims abstract description 41
- 239000000758 substrate Substances 0.000 claims abstract description 16
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 239000001257 hydrogen Substances 0.000 claims abstract description 11
- 229910052739 hydrogen Inorganic materials 0.000 claims abstract description 11
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 10
- 230000008021 deposition Effects 0.000 claims abstract description 9
- 230000004888 barrier function Effects 0.000 claims abstract description 5
- 230000015572 biosynthetic process Effects 0.000 claims description 5
- 239000007789 gas Substances 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 9
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- 230000006798 recombination Effects 0.000 description 3
- 238000005215 recombination Methods 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
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- 239000002184 metal Substances 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 229910052594 sapphire Inorganic materials 0.000 description 2
- 239000010980 sapphire Substances 0.000 description 2
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 2
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 description 2
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical compound C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- MHYQBXJRURFKIN-UHFFFAOYSA-N C1(C=CC=C1)[Mg] Chemical compound C1(C=CC=C1)[Mg] MHYQBXJRURFKIN-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
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- 229910021529 ammonia Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
- H01L33/0075—Processes for devices with an active region comprising only III-V compounds comprising nitride compounds
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/12—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a stress relaxation structure, e.g. buffer layer
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Abstract
The invention discloses the preparation method of a kind of LED epitaxial slice, belong to technical field of semiconductors.Described preparation method includes: rise high-temperature and substrate carries out under pure hydrogen atmosphere heat treatment；Reduce temperature deposition cushion；Carry out the intensification in multiple stage, regrowth transition zone, transition zone is first to transfer three dimensional growth to transfer the AlGaN layer of two-dimensional growth again to from two-dimensional growth, the growth pressure of same layer AlGaN layer is constant, at least the growth in time of the growth pressure of two-layer AlGaN layer and reduce, the temperature constant of same stage, and the growth in time of the temperature of different phase and raise；Raise temperature deposition undoped GaN layer；Growth N-type layer；Alternating growth InGaN layer and GaN layer, form multiple quantum well layer；Growing P-type electronic barrier layer；Growing P-type layer；Growing P-type contact layer.The present invention adapts to the production of large-size epitaxial wafer.
Description
Technical field
The present invention relates to technical field of semiconductors, particularly to the preparation method of a kind of LED epitaxial slice.
Background technology
Light emitting diode (Light Emitting Diodes, be called for short LED) has that volume is little, various colors is colorful, uses
The advantages such as life-span length, are the new products of great power of influence in information photoelectron new industry, be widely used in illumination, display screen,
The fields such as signal lights, backlight, toy.
Along with improving constantly of human cost, LED chip manufacturer the most progressively oversize epitaxy technique is (more than 2 inches
Epitaxial wafer) development, to improve the production efficiency (3-4 such as 2 times, 3 inches epitaxial wafers that 6 inches of epitaxial wafers are 4 inches of epitaxial wafers
Times, 8-9 times of 2 inches of epitaxial wafers), reduction production cost.
During realizing the present invention, inventor finds that prior art at least there is problems in that
There is lattice paprmeter and coefficient of thermal expansion mismatch between GaN base epitaxial wafer and Sapphire Substrate, compare stock size
Epitaxial wafer (2 inches), large-size epitaxial wafer can produce more dislocation and defect, luminous efficiency and the antistatic to LED component
Ability has undesirable effect.
Summary of the invention
Produce dislocation and the problem of defect to solve prior art, embodiments provide a kind of light emitting diode
The preparation method of epitaxial wafer.Described technical scheme is as follows:
Embodiments providing the preparation method of a kind of LED epitaxial slice, described preparation method includes:
Rise high-temperature and substrate is carried out under pure hydrogen atmosphere heat treatment；
Reduce temperature deposition cushion；
Carrying out the intensification in multiple stage, regrowth transition zone, described transition zone for first transferring three dimensional growth to from two-dimensional growth
Transfer the AlGaN layer of two-dimensional growth again to, described in same layer, the growth pressure of AlGaN layer is constant, at least AlGaN layer described in two-layer
Growth pressure growth in time and reduce, the temperature constant in same described stage, and the temperature in different described stage is in time
Growth and raise；
Raise temperature deposition undoped GaN layer；
The GaN layer of growth doping Si, forms N-type layer；
Alternating growth InGaN layer and GaN layer, form multiple quantum well layer；
The AlGaN layer of growth doping Mg, forms P-type electron barrier layer；
The GaN layer of growth doping Mg, forms P-type layer；
The GaN layer of growth doping Mg, forms p-type contact layer, and the thickness of described p-type contact layer is less than the thickness of described P-type layer
Degree.
Alternatively, in described transition zone the growth in time of the growth pressure of all described AlGaN layer and reduce.
Alternatively, in described transition zone the growth in time of the growth pressure of all described AlGaN layer and first reduce and rise again
High.
Alternatively, in described transition zone, the growth pressure of all described AlGaN layer is divided into two kinds, the institute of two kinds of growth pressures
State the AlGaN layer described transition zone of alternately laminated formation.
Alternatively, in described transition zone, all described AlGaN layer are divided at least two groups, and often group includes at least three kinds of growth pressures
The described AlGaN layer of power, often in group the growth in time of the growth pressure of all described AlGaN layer and reduce.
Alternatively, in described transition zone, all described AlGaN layer are divided at least two groups, and often group includes at least three kinds of growth pressures
The described AlGaN layer of power, often in group the growth in time of the growth pressure of all described AlGaN layer and first reduce and raise again.
Alternatively, the thickness of described AlGaN layer is 10～500nm.
Alternatively, the thickness of described transition zone is less than or equal to 1.5 μm.
Alternatively, substrate is carried out heat treatment under pure hydrogen atmosphere by described liter of high-temperature, including:
Carry out the intensification in multiple stage, more described substrate is carried out under pure hydrogen atmosphere heat treatment, same described stage
Temperature constant, and the growth in time of the temperature in different described stage and raise.
Alternatively, the size of described substrate is 3 inches, 4 inches, 6 inches, 8 inches or 2 inches.
The technical scheme that the embodiment of the present invention provides has the benefit that
By first transferring three dimensional growth to from two-dimensional growth transfer the multilayer Al GaN layer of two-dimensional growth at least two again to by being formed
The growth pressure growth in time of layer AlGaN layer and reduce, utilize high pressure to be conducive to the longitudinal growth of crystal (i.e. three-dimensional raw
Long), low pressure is conducive to the cross growth (i.e. two-dimensional growth) of crystal, make the crystal grain of cushion under the multiple crystallization of transition zone,
Starting slowly to become big from monocrystalline and form island core, the line dislocation density and the V-type dislocation that effectively reduce bottom extend to SQW, favorably
Discharging stress when epitaxial growth bottom, improve the growth quality of bottom when building crystals growth, the growth for follow-up SQW improves
Good bottom condition, beneficially hole and the radiation recombination of electronics, improve the luminous efficiency of LED, be particularly well-suited to large scale
The production of epitaxial wafer.And first carry out the intensification in multiple stage, the temperature constant of same stage, and the temperature of different phase is at any time
Between growth and raise, temperature field is stable, be heated evenly, beneficially the uniformity of bottom temperature field and stability, reduces because of thermal expansion
The difference of coefficient and the tensile stress that causes, alleviate the stress that lattice mismatch produces, improve the angularity of epitaxial wafer, reduce epitaxial wafer
Dislocation and defect concentration, improve crystal mass, improve injection efficiency and the luminous efficiency of device in hole, reduce fragment rate,
Adapt to the production of large-size epitaxial wafer.
Accompanying drawing explanation
For the technical scheme being illustrated more clearly that in the embodiment of the present invention, in embodiment being described below required for make
Accompanying drawing be briefly described, it should be apparent that, below describe in accompanying drawing be only some embodiments of the present invention, for
From the point of view of those of ordinary skill in the art, on the premise of not paying creative work, it is also possible to obtain other according to these accompanying drawings
Accompanying drawing.
Fig. 1 is the flow chart of the preparation method of a kind of LED epitaxial slice that the embodiment of the present invention one provides；
Fig. 2 a is that the temperature rate that the embodiment of the present invention one provides keeps constant schematic diagram；
Fig. 2 b is the schematic diagram that the temperature rate that the embodiment of the present invention one provides is gradually reduced；
Fig. 2 c is the schematic diagram that the temperature rate that the embodiment of the present invention one provides is gradually increased；
Fig. 3 is the flow chart of the preparation method of a kind of LED epitaxial slice that the embodiment of the present invention two provides；
Fig. 4 is the schematic diagram of the transition zone growth pressure change that the embodiment of the present invention two provides；
Fig. 5 is the schematic diagram of the transition zone growth pressure change that the embodiment of the present invention three provides；
Fig. 6 is the schematic diagram of the transition zone growth pressure change that the embodiment of the present invention four provides.
Detailed description of the invention
For making the object, technical solutions and advantages of the present invention clearer, below in conjunction with accompanying drawing to embodiment party of the present invention
Formula is described in further detail.
Embodiment one
Embodiments provide the preparation method of a kind of LED epitaxial slice, see Fig. 1, this preparation method bag
Include:
Step 101: rise high-temperature and substrate is carried out under pure hydrogen atmosphere heat treatment.
Alternatively, this step 101 may include that
Carry out the intensification in multiple stage, then substrate is carried out under pure hydrogen atmosphere heat treatment.
In the present embodiment, the temperature constant of same stage, and the growth in time of the temperature of different phase and raise.
Alternatively, the increase rate of the temperature of different phase can keep constant (as shown in Figure 2 a), be gradually reduced (such as figure
Shown in 2b) or gradually rise (as shown in Figure 2 c).
Alternatively, the difference of the temperature in adjacent two stages can set according to epitaxially grown requirement, to choose coupling
The optimal value of epitaxial wafer growth.
Preferably, the difference of the temperature in adjacent two stages can be definite value.
Preferably, the difference of the temperature in adjacent two stages can be different.
Alternatively, the time that each stage takies can set according to epitaxially grown requirement, to choose coupling epitaxial wafer
The optimal value of growth.
Preferably, the time that each stage takies can be definite value.
Preferably, the time that each stage takies can be different.
Specifically, the size of substrate can be 3 inches, 4 inches, 6 inches, 8 inches or 2 inches.
Specifically, arbitrary during the material of substrate can use sapphire, Si, SiC, GaN, AlN, ZnO, GaAs, metal
Kind.
It should be noted that the purpose of heat treatment is cleaning substrate surface.
Step 102: reduce temperature deposition cushion.
Step 103: carry out the intensification in multiple stage, regrowth transition zone.
In the present embodiment, transition zone is first to transfer three dimensional growth to transfer the multilamellar of two-dimensional growth again to from two-dimensional growth
AlGaN layer.The growth pressure of same layer AlGaN layer is constant, at least the growth in time of the growth pressure of two-layer AlGaN layer and drop
Low.The temperature constant of same stage, and the growth in time of the temperature of different phase and raise.Specifically, AlGaN layer is
AlxGa1-xN shell, 0≤x≤1.
Alternatively, the increase rate of the temperature of different phase can keep constant (as shown in Figure 2 a), be gradually reduced (such as figure
Shown in 2b) or gradually rise (as shown in Figure 2 c).
Alternatively, the difference of the temperature in adjacent two stages can set according to epitaxially grown requirement, to choose coupling
The optimal value of epitaxial wafer growth.
Preferably, the difference of the temperature in adjacent two stages can be definite value.
Preferably, the difference of the temperature in adjacent two stages can be different.
Alternatively, the time that each stage takies can set according to epitaxially grown requirement, to choose coupling epitaxial wafer
The optimal value of growth.
Preferably, the time that each stage takies can be definite value.
Preferably, the time that each stage takies can be different.
It should be noted that carry out many before carrying out the mode of the intensification in multiple stage and growth transition zone before heat treatment
The mode of the intensification in individual stage can be identical, it is also possible to different.Such as, the speed of the intensification in multiple stage is carried out before heat treatment
Gradually rising, the speed of the intensification carrying out multiple stage before growth transition zone keeps constant.
In a kind of implementation of the present embodiment, in transition zone, the growth pressure of all AlGaN layer can in time
Increase and reduce.
In the another kind of implementation of the present embodiment, in transition zone, the growth pressure of all AlGaN layer can be in time
Growth and first reduce and raise again.
In another implementation of the present embodiment, in transition zone, the growth pressure of all AlGaN layer can be divided into two
Kind, the AlGaN layer alternately laminated formation transition zone of two kinds of growth pressures.
In another implementation of the present embodiment, in transition zone, all AlGaN layer can be divided at least two groups, often group
Including the AlGaN layer of at least three kinds of growth pressures, often in group the growth in time of the growth pressure of all AlGaN layer and reduce.
In another implementation of the present embodiment, in transition zone, all AlGaN layer can be divided at least two groups, often group
Including the AlGaN layer of at least three kinds of growth pressures, often in group the growth in time of the growth pressure of all AlGaN layer and first reduce
Raise again.
Alternatively, the thickness of AlGaN layer can be 10～500nm.
Alternatively, the thickness of transition zone can be less than or equal to 1.5 μm.
Step 104: raise temperature deposition undoped GaN layer.
Step 105: the GaN layer of growth doping Si, forms N-type layer.
Step 106: alternating growth InGaN layer and GaN layer, forms multiple quantum well layer.
Step 107: the AlGaN layer of growth doping Mg, forms P-type electron barrier layer.
Step 108: the GaN layer of growth doping Mg, forms P-type layer.
Step 109: the GaN layer of growth doping Mg, forms p-type contact layer.
In the present embodiment, the thickness of p-type contact layer is less than the thickness of P-type layer.
In actual applications, it is also possible to other layer in addition to transition zone in epitaxial wafer is first carried out the temperature in multiple stage
Adjust regrowth, such as undoped GaN layer.Specifically, this step 104 may include that the intensification carrying out multiple stage, redeposited non-
The growth in time of doped gan layer, the temperature constant of same stage, and the temperature of different phase and raise.
The embodiment of the present invention transfers the multilamellar of two-dimensional growth to again by first transferring formation to three dimensional growth from two-dimensional growth
In AlGaN layer at least the growth pressure growth in time of two-layer AlGaN layer and reduce, utilize high pressure to be conducive to the longitudinal direction of crystal
Growth (i.e. three dimensional growth), low pressure is conducive to the cross growth (i.e. two-dimensional growth) of crystal, makes the crystal grain of cushion at transition zone
Multiple crystallization under, start slowly to become big from monocrystalline and form island core, effectively reduce line dislocation density and the V-type dislocation vector of bottom
Sub-trap extends, and beneficially discharges stress during epitaxial growth bottom, improves the growth quality of bottom when building crystals growth, for follow-up quantum
The growth of trap improves good bottom condition, beneficially hole and the radiation recombination of electronics, improves the luminous efficiency of LED, especially
It is applicable to the production of large-size epitaxial wafer.And first carry out the intensification in multiple stage, the temperature constant of same stage, and not same order
The temperature growth in time of section and raise, temperature field is stable, be heated evenly, beneficially the uniformity of bottom temperature field and stability,
Reduce the tensile stress caused because of the difference of thermal coefficient of expansion, alleviate the stress that lattice mismatch produces, improve the warpage of epitaxial wafer
Degree, reduces dislocation and the defect concentration of epitaxial wafer, improves crystal mass, improves the injection efficiency in hole and the luminous effect of device
Rate, reduces fragment rate, adapts to the production of large-size epitaxial wafer.
Embodiment two
Embodiments provide the preparation method of a kind of LED epitaxial slice, the preparation side that the present embodiment provides
Method is implementing of the preparation method of embodiment one offer.In an embodiment, with high-purity hydrogen (H2) or nitrogen (N2) as carrying
Gas, with trimethyl gallium (TMGa), trimethyl aluminium (TMAl), trimethyl indium (TMIn) and ammonia (NH3) respectively as Ga, Al, In,
N source, uses silane (SiH4), two cyclopentadienyl magnesium (Cp2Mg) respectively as N-type, P-type dopant.Seeing Fig. 3, this preparation method includes:
Step 201: substrate is first warmed up to 500 DEG C, then be warmed up to 800 DEG C and stablize 30s, then it is warmed up to 1000 DEG C the most surely
Determine 30s, then be warmed up to 1300 DEG C and stablize 10min, under pure hydrogen atmosphere, carry out heat treatment.
Step 202: reduction temperature is to 625 DEG C or 540 DEG C, and deposition a layer thickness is the GaN layer of 30nm, forms cushion.
Step 203: be first warmed up to 800 DEG C and stablize 30s, then be warmed up to 1000 DEG C and stablize 30s, then it is warmed up to 1205 DEG C
And stablize 300s, under the pressure of 900mbar, alternately grow the AlGaN layer of one layer of 100nm and grow under the pressure of 300mbar
The AlGaN layer (as shown in Figure 4) of one layer of 100nm, forms transition zone.
In the present embodiment, transition zone includes 10 layers of AlGaN layer.
Step 204: liter high-temperature is to 1255 DEG C, and deposit thickness is the undoped GaN layer of 1.5 μm.
Step 205: growth thickness is the GaN layer of the doping Si of 2 μm, forms N-type layer.
Step 206: 8 layers of InGaN layer of alternating growth and 8 layers of GaN layer, forms multiple quantum well layer.
In the present embodiment, the thickness of InGaN layer is 3nm, and the growth temperature of InGaN layer is 880 DEG C；The thickness of GaN layer
For 12nm, the growth temperature of GaN layer is 960 DEG C.It should be noted that owing to In is temperature sensitive, the most at high temperature volatilize,
For the ease of the growth of In, the growth temperature of InGaN layer is lower, and GaN layer requires crystal mass to get well, and therefore temperature is wanted
The highest.
Step 207: at a temperature of 970 DEG C, the AlGaN layer of the doping Mg of growth 50nm, form P-type electron barrier layer.
Step 208: at a temperature of 1090 DEG C, the GaN layer of the growth doping Mg of growth 200nm, form P-type layer.
Step 209: at a temperature of 1120 DEG C, the GaN layer of the growth doping Mg of growth 10nm, form p-type contact layer.
In the present embodiment, the thickness of p-type contact layer is less than the thickness of P-type layer.
It should be noted that above-mentioned steps can use metal organic chemical vapor deposition equipment to realize, epitaxial junction
Shu Hou, is carried out the epitaxial wafer of growth, deposits, the semiconducter process such as photoetching and etching, i.e. can be made into single chips.
The embodiment of the present invention transfers the multilamellar of two-dimensional growth to again by first transferring formation to three dimensional growth from two-dimensional growth
In AlGaN layer at least the growth pressure growth in time of two-layer AlGaN layer and reduce, utilize high pressure to be conducive to the longitudinal direction of crystal
Growth (i.e. three dimensional growth), low pressure is conducive to the cross growth (i.e. two-dimensional growth) of crystal, makes the crystal grain of cushion at transition zone
Multiple crystallization under, start slowly to become big from monocrystalline and form island core, effectively reduce line dislocation density and the V-type dislocation vector of bottom
Sub-trap extends, and beneficially discharges stress during epitaxial growth bottom, improves the growth quality of bottom when building crystals growth, for follow-up quantum
The growth of trap improves good bottom condition, beneficially hole and the radiation recombination of electronics, improves the luminous efficiency of LED, especially
It is applicable to the production of large-size epitaxial wafer.And first carry out the intensification in multiple stage, the temperature constant of same stage, and not same order
The temperature growth in time of section and raise, temperature field is stable, be heated evenly, beneficially the uniformity of bottom temperature field and stability,
Reduce the tensile stress caused because of the difference of thermal coefficient of expansion, alleviate the stress that lattice mismatch produces, improve the warpage of epitaxial wafer
Degree, reduces dislocation and the defect concentration of epitaxial wafer, improves crystal mass, improves the injection efficiency in hole and the luminous effect of device
Rate, reduces fragment rate, adapts to the production of large-size epitaxial wafer.
Embodiment three
Embodiments provide the preparation method of a kind of LED epitaxial slice, the preparation side that the present embodiment provides
Method is with the difference of the preparation method that embodiment two provides, in transition zone the growth pressure of each layer AlGaN layer from
900mbar starts, and one layer is reduced 100mbar (as shown in Figure 5).
Embodiment four
Embodiments provide the preparation method of a kind of LED epitaxial slice, the preparation side that the present embodiment provides
Method is with the difference of the preparation method that embodiment two provides, and the growth pressure of each layer AlGaN layer is from middle
250mbar starts, and one layer of both sides raise 250mbar (as shown in Figure 6).
The invention described above embodiment sequence number, just to describing, does not represent the quality of embodiment.
The foregoing is only presently preferred embodiments of the present invention, not in order to limit the present invention, all spirit in the present invention and
Within principle, any modification, equivalent substitution and improvement etc. made, should be included within the scope of the present invention.
Claims (10)
1. the preparation method of a LED epitaxial slice, it is characterised in that described preparation method includes:
Rise high-temperature and substrate is carried out under pure hydrogen atmosphere heat treatment；
Reduce temperature deposition cushion；
Carrying out the intensification in multiple stage, regrowth transition zone, described transition zone turns for first transferring three dimensional growth to from two-dimensional growth again
For the AlGaN layer of two-dimensional growth, described in same layer, the growth pressure of AlGaN layer is constant, at least growth of AlGaN layer described in two-layer
Pressure growth in time and reduce, the temperature constant in same described stage, and the increasing that the temperature in different described stage is in time
Grow and raise；
Raise temperature deposition undoped GaN layer；
The GaN layer of growth doping Si, forms N-type layer；
Alternating growth InGaN layer and GaN layer, form multiple quantum well layer；
The AlGaN layer of growth doping Mg, forms P-type electron barrier layer；
The GaN layer of growth doping Mg, forms P-type layer；
The GaN layer of growth doping Mg, forms p-type contact layer, and the thickness of described p-type contact layer is less than the thickness of described P-type layer.
Preparation method the most according to claim 1, it is characterised in that the life of all described AlGaN layer in described transition zone
The growth in time of long pressure and reduce.
Preparation method the most according to claim 1, it is characterised in that the life of all described AlGaN layer in described transition zone
The growth in time of long pressure and first reduce and raise again.
Preparation method the most according to claim 1, it is characterised in that the life of all described AlGaN layer in described transition zone
Long pressure is divided into two kinds, the described AlGaN layer described transition zone of alternately laminated formation of two kinds of growth pressures.
Preparation method the most according to claim 1, it is characterised in that in described transition zone, all described AlGaN layer are divided into
At least two groups, often group includes the described AlGaN layer of at least three kinds of growth pressures, often the growth pressure of all described AlGaN layer in group
Power growth in time and reduce.
Preparation method the most according to claim 1, it is characterised in that in described transition zone, all described AlGaN layer are divided into
At least two groups, often group includes the described AlGaN layer of at least three kinds of growth pressures, often the growth pressure of all described AlGaN layer in group
Power growth in time and first reduce and raise again.
7. according to the preparation method described in any one of claim 1-6, it is characterised in that the thickness of described AlGaN layer be 10～
500nm。
8. according to the preparation method described in any one of claim 1-6, it is characterised in that the thickness of described transition zone less than or etc.
In 1.5 μm.
9. according to the preparation method described in any one of claim 1-6, it is characterised in that described liter of high-temperature by substrate at pure hydrogen
Heat treatment is carried out under gas atmosphere, including:
Carry out the intensification in multiple stage, more described substrate is carried out under pure hydrogen atmosphere heat treatment, the temperature in same described stage
Spend constant, and the growth in time of the temperature in different described stage and raise.
10. according to the preparation method described in any one of claim 1-6, it is characterised in that the size of described substrate is 3 inches, 4
Inch, 6 inches, 8 inches or 2 inches.
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