CN103647009A - Nitride light emitting diode and manufacturing method thereof - Google Patents

Nitride light emitting diode and manufacturing method thereof Download PDF

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Publication number
CN103647009A
CN103647009A CN201310665895.6A CN201310665895A CN103647009A CN 103647009 A CN103647009 A CN 103647009A CN 201310665895 A CN201310665895 A CN 201310665895A CN 103647009 A CN103647009 A CN 103647009A
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quantum well
light emitting
gan
iii
emitting devices
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陈沙沙
张东炎
刘晓峰
王良均
王笃祥
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Tianjin Sanan Optoelectronics Co Ltd
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Tianjin Sanan Optoelectronics Co Ltd
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Priority to CN201310665895.6A priority Critical patent/CN103647009A/en
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Priority to PCT/CN2014/086720 priority patent/WO2015085803A1/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/16—Controlling or regulating
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/40—AIIIBV compounds wherein A is B, Al, Ga, In or Tl and B is N, P, As, Sb or Bi
    • C30B29/403—AIII-nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H01L33/0066—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound
    • H01L33/007—Processes for devices with an active region comprising only III-V compounds with a substrate not being a III-V compound comprising nitride compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of group III and group V of the periodic system
    • H01L33/32—Materials of the light emitting region containing only elements of group III and group V of the periodic system containing nitrogen

Abstract

The invention discloses a nitride light emitting diode and a manufacturing method thereof. The structure at least comprises a substrate, an n type nitride layer, an active area and a p type nitride layer. The active area comprises M pairs of AlxIn1-x-yGayN/GaN quantum wells and N pairs of InGaN/GaN quantum wells. Electronic reflux and a polarization effect are improved. Composite efficiency of a quantum well area and a density of two-dimension electron gas at an interface are increased. Photoelectric conversion efficiency of the light emitting diode is increased too. Simultaneously, an endurance capacity of the LED to static electricity is enhanced and an electrical property of the LED is improved.

Description

Iii-nitride light emitting devices and preparation method thereof
Technical field
The present invention relates to semiconductor photoelectric device preparation field, relate in particular to the technology of preparing of nitride semiconductor LED.
Background technology
GaN based light-emitting diode is widely used in daily life, compares with conventional light source, and it is long that LED has the life-span, and light efficiency is high, and energy consumption is low, and the good characteristic that volume is little is an important trend of modern illumination development.
LED luminous efficiency is to weigh one of vital index of LED device quality, and wherein Multiple Quantum Well (MQW) structure is to realize the key of High Efficiency Luminescence.Tradition GaN base LED is generally used InGaN/GaN structure, as shown in Figure 1, there is piezoelectricity and spontaneous polarization in the GaN base epitaxial loayer of looking unfamiliar long along C in sapphire and silicon carbide substrates, cause being with of quantum well and quantum base to produce serious crooked, greatly reduce the ability of capturing to charge carrier, injection efficiency step-down, radiation recombination efficiency reduces.In addition, in order to reduce electronics overshoot, the method generally adopting is after luminescent layer, to add electronic barrier layer.At present, the combined efficiency that how to improve MQW is the major technique bottleneck that GaN base LED faces.
Summary of the invention
Problem for above-mentioned existence, the object of the invention is to: a kind of light-emitting diode with high combined efficiency active area and preparation method thereof is provided, Al is carried out in active area xin 1-x-yga ythe segmented assembled growth of N/GaN quantum well and conventional InGaN/GaN quantum well, can reduce polarized electric field, promotes the combined efficiency in electronics and hole, strengthens the antistatic effect of LED device, promotes light-emitting diode luminous efficiency.
Technical scheme of the present invention is: the light-emitting diode with high combined efficiency active area, comprise: N-shaped nitride layer and p-type nitride layer, and be positioned at active area between the two, wherein, described active area comprises the first quantum well and the second quantum well, the contiguous described N-shaped nitride layer of described the first quantum well, its trap layer is Al xin 1-x-yga yn(0 < x < 1,0 < y < 1, x≤y, x+y < 1).
In general, N-shaped nitride layer or p-type nitride layer are formed on substrate, certainly, can also between substrate and N-shaped nitride layer, insert low temperature buffer layer as required, between resilient coating and N-shaped nitride layer, insert non-doped nitride layer, between active area and p-type nitration case, insert electronic barrier layer, on p-type nitration case, cover highly doped p-type nitration case.
Compare with the active area of conventional structure, always logarithm is constant by maintaining the Multiple Quantum Well (MQW) in source region for light-emitting diode of the present invention, and wherein the first quantum well comprises that M is to Al xin 1-x-yga yn/GaN quantum well (0 < x < 1,0 < y < 1, x≤y, x+y < 1), the second quantum well comprises that N is to InGaN/GaN quantum well, wherein M, N span meet 5≤M+N≤30,2≤M≤7.
Particularly, described Al xin 1-x-yga ythe periodicity M of N/GaN quantum well can be 2 ~ 7, and periodic thickness is between 15 to 140; Described Al xin 1-x-yga ythe In of N trap and Al component are fixed, or are the gradual change of handstand V-type, trapezoidal gradual change or sine curve gradual change form along the direction of growth; The periodicity N of described InGaN/GaN quantum well is 3 ~ 23, and periodic thickness is between 50 to 200.
Preferably, described Al xin 1-x-yga ythe band gap width minimum value of N trap is greater than the band gap width of InGaN trap.In certain embodiments, described Al xin 1-x-yga ythe band gap width of N trap is 2.9 ~ 3.4eV, and the band gap width of described InGaN trap is 2.3 ~ 2.8eV.
Preferably, described Al xin 1-x-yga yn/GaN quantum well periodic thickness is less than the periodic thickness of InGaN/GaN quantum well.In certain embodiments, described InGaN/GaN quantum well periodic thickness is 50 ~ 200, Al xin 1-x-yga yn/GaN quantum well periodic thickness is 30% ~ 70% of InGaN/GaN quantum well.
The preparation method of aforementioned iii-nitride light emitting devices, comprises step: a substrate is provided; On described substrate, form N-shaped nitride layer; On described N-shaped nitration case, be formed with source region; On described active area, form p-type nitride layer; Wherein, the active area of described formation comprises that front M is to Al xin 1-x-yga yn/GaN quantum well and rear N are to InGaN/GaN quantum well.
Preferably, described front M is to Al xin 1-x-yga ythe growth time of N/GaN quantum well is less than the growth time of rear N to InGaN/GaN quantum well.In certain embodiments, front M is to Al xin 1-x-yga yal in N/GaN quantum well xin 1-x-yga ythe growth temperature of N trap is between 750 ℃ to 820 ℃, and the growth temperature that GaN builds is between 820 ℃ to 900 ℃; Rear N is between 700 ℃ to 800 ℃ to the growth temperature of InGaN trap in InGaN/GaN quantum well, and the growth temperature that GaN builds is between 820 ℃ to 900 ℃.
Particularly, a kind of preparation method with the light-emitting diode of high combined efficiency active area, comprises step: first anneal substrate 1 ~ 20 minute in hydrogen environment (1), clean substrate surface, and temperature, between 1000 ℃ ~ 1200 ℃, is then carried out nitrogen treatment; (2) temperature is dropped between 400 ℃ and 650 ℃, the thick low temperature buffer layer of growth 10 ~ 35nm, growth pressure is between 400 to 600torr; (3) after low temperature buffer layer growth finishes, between 900 ℃ ~ 1200 ℃, it is carried out to in-situ annealing processing, the time is between 3 minutes to 10 minutes; (4) after annealing, temperature rises between 900 ℃ ~ 1200 ℃, and growth thickness is the non-doped nitride layer of 0.5 μ m to 5 μ m, and growth pressure is between 100torr to 600torr; (5) after non-Doped GaN layer growth finishes, growth thickness is at the thick N-shaped nitride layer of mixing Si of 0.5 ~ 3 μ m, and growth temperature is between 1050 ℃ ~ 1100 ℃, and growth pressure is between 100torr to 600torr, and the doping content of Si is 1 * 10 17cm -3~ 2 * 10 19cm -3between; (6) after N-shaped nitride layer growth finishes, the Al in 2 ~ 7 cycles that start to grow xin 1-x-yga yn/GaN(0 < x < 1,0 < y < 1, x≤y, x+y < 1) quantum well, periodic thickness between 15 to 140, Al xin 1-x-yga ythe growth temperature of N trap is between 750 ℃ to 820 ℃, and the growth temperature that GaN builds is between 820 ℃ to 900 ℃, and growth pressure is between 100torr to 600torr; (7) Al xin 1-x-yga yafter N/GaN quantum trap growth finishes, conventional InGaN/GaN quantum well starts to grow, periodicity is 3 to 23, periodic thickness is between 50 to 200, the growth temperature of InGaN trap is between 700 ℃ to 800 ℃, the growth temperature that GaN builds is between 820 ℃ to 900 ℃, and growth pressure is between 100torr to 600torr; (8) after InGaN/GaN quantum trap growth finishes, temperature is risen between 850 ℃ to 1050 ℃, growth thickness is the p-type electronic barrier layer between 10nm to 100nm, and growth pressure is between 50torr to 200torr; (9) after the growth of p-type electronic barrier layer finishes, growth thickness is the p-type nitride layer between 50nm to 200nm, and growth temperature is between 850 ℃ to 1050 ℃, and growth pressure is between 50torr to 200torr; (10) after the growth of p-type nitride layer finishes, growth thickness is the highly doped p-type nitride layer between 0.1nm to 20nm, and its growth temperature is between 700 ℃ to 1000 ℃, and growth pressure is between 50torr to 200torr; (11) after epitaxial growth finishes, in temperature, be between 400 ℃ to 520 ℃, in pure nitrogen gas environment, epitaxial wafer annealed 5 ~ 20 minutes; Finally epitaxial wafer is cleaned, by semiconducter process such as photoetching and etchings, make p and n electrode, make light-emitting diode chip for backlight unit.
Advantage of the present invention at least comprises: N-shaped layer electronics is at process Al xin 1-x-yga yduring N/GaN quantum well speed have decay, thereby reducing electronics enters the probability of p-type layer by electronic barrier layer (EBL), improve device performance; The electronics that simultaneously also electronic barrier layer can be rebounded is limited in and in MQW, participates in luminously, reduces electronic reflux, and too high to overcome in the large sub-density of electric current download stream, electronics overflows the problem that quantum well causes luminous efficiency to decline.
Further, described light-emitting diode is connected after foreign current, at Al xin 1-x-yga yn/GaN interface produces higher two-dimensional electron gas density, can make electronics when passing through front M to quantum well, increase the uniformity of the extending transversely and CURRENT DISTRIBUTION of electronics, reducing electric current blocks up, reduce cut-in voltage, the impact of buffering static to light-emitting diode, improves photoelectric conversion rate, makes thermal source distribution and luminous intensity more even.
Further, Al xin 1-x-yga ythe thickness of N/GaN quantum well is thinner than InGaN/GaN quantum well, reduces auger recombination, promotes combined efficiency, and M is to Al in addition xin 1-x-yga yn/GaN quantum well periodic thickness is less, can shorten growth time, promotes production capacity, reduces costs.
Further, Al xin 1-x-yga ythe combination of N/GaN quantum well and InGaN/GaN quantum well, greatly reduces the stress of conventional I nGaN/GaN quantum well, and electron-hole wave functions segregation phenomenon is spatially eased, and the luminous efficiency of LED gets a promotion.
Accompanying drawing explanation
Accompanying drawing is used to provide further to be understood the present invention, and forms a part for specification, for explaining the present invention, is not construed as limiting the invention together with embodiments of the present invention.In addition, accompanying drawing data are to describe summary, are not to draw in proportion.
Fig. 1 is traditional light-emitting diode cutaway view.
Fig. 2 is the iii-nitride light emitting devices cutaway view of embodiment 1 preparation.
Fig. 3 is the iii-nitride light emitting devices cutaway view of embodiment 2 preparations.
Fig. 4 is the quantum well structure energy band diagram of embodiment 3 disclosed iii-nitride light emitting devices.
In figure, each label represents:
101,201,301: substrate;
102,202,302: low temperature buffer layer;
103,203,303: non-Doped GaN layer;
104,204,304:n type GaN layer;
105,205,305: quantum well;
205a, 305a: front M is to Al xin 1-x-yga yn/GaN quantum well;
205b, 305b: rear N is to InGaN/GaN quantum well;
106,206,306:p type electronic barrier layer;
107,207,307:p type GaN layer;
108,208, the high GaN contact layer of mixing of 308:p type;
109,209,309:p electrode;
110,210,310:n electrode.
Embodiment
The practicality of understanding its substantive distinguishing features and having for the present invention is easier to, is just described in further detail the some specific embodiments of the present invention below by reference to the accompanying drawings.But the following description about embodiment and explanation do not constitute any limitation protection range of the present invention.
embodiment 1
As shown in Figure 2, iii-nitride light emitting devices, comprising: Sapphire Substrate 201, low temperature buffer layer 202, non-Doped GaN layer 203, N-shaped GaN layer 204, active area 205, p-type electronic barrier layer 206, p-type GaN layer 207, the high GaN of the mixing contact layer 208 of p-type, p electrode 209 and n electrode 210.Below in conjunction with preparation method, be elaborated.
First low temperature growth buffer layer 202 in Sapphire Substrate 201, then growth thickness is the non-Doped GaN layer 203 of 1 μ m, then on non-Doped GaN layer 203, forming Si, to mix concentration be 1.5 * 10 19cm -3n-shaped GaN layer 204, the Multiple Quantum Well of then growing active area 205, then growing p-type Al 0.15ga 0.85it is 5 * 10 that N layer is mixed concentration as p-type electronic barrier layer 206, Mg 19cm -3p-type GaN layer 207 and the high GaN contact layer 208 of mixing of p-type, after epitaxial growth finishes, in temperature, be between 400 ℃ to 520 ℃, in pure nitrogen gas environment to epitaxial wafer annealing 5 ~ 20 minutes.Finally epitaxial wafer is cleaned, by semiconducter process such as photoetching and etchings, make p electrode 209 and n electrode 210, make light-emitting diode chip for backlight unit.
Wherein, when growth Multiple Quantum Well active area 205, the Al in 4 cycles of first growing xin 1-x-yga yn/GaN Multiple Quantum Well 205a, is used N 2as carrier gas, growth pressure is 200torr, Al xin 1-x-yga ythe growth temperature of N trap is 820 ℃, and thickness is that 20, Al component x value is that 0.10, y value is 0.74, In component 1-x-y=0.16; The growth temperature that GaN builds is 880 ℃, and thickness is 100; Al 0.10in 0.16ga 0.74after N/GaN quantum trap growth finishes, the InGaN/GaN quantum well 205b in 8 cycles of then growing, is used N 2as carrier gas, growth pressure is 200torr, and the growth temperature of InGaN trap is 770 ℃, and thickness is that 30, In component is that the growth temperature that 0.2, GaN builds is 880 ℃, and thickness is 130.
embodiment 2
The difference of the present embodiment and embodiment 1 is: the front M of active area is to Al 0.10in 0.16ga 0.74in N/GaN quantum well, Al component and In component are gradual changes.As shown in Figure 3, iii-nitride light emitting devices, comprising: Sapphire Substrate 301, low temperature buffer layer 302, non-Doped GaN layer 303, N-shaped GaN layer 304, active area 305, p-type electronic barrier layer 306, p-type GaN layer 307, the high GaN of the mixing contact layer 308 of p-type, p electrode 309 and n electrode 310.Wherein, the Al in 4 cycles xin 1-x-yga yin N/GaN Multiple Quantum Well 305a, Al component x value is followed successively by 0.025,0.05,0.075 and 0.1 from bottom to up, and correspondingly, In component 1-x-y value is followed successively by 0.04,0.08,0.12 and 0.16 from bottom to up.
embodiment 3
As shown in Figure 4, compare with previous embodiment, difference is: the quantum well of the present embodiment can be with and be designed with difference, Al xin 1-x-yga ythe band gap width of N trap ( e g ) minimum value is greater than the band gap width of InGaN trap.Particularly, Al xin 1-x-yga ythe band gap width of N trap is 2.9 ~ 3.4eV, and the band gap width of InGaN trap is 2.3 ~ 2.8eV.Due to Al xin 1-x-yga ythe band gap width of N trap ( e g ) > InGaN trap band gap width ( e g ), avoid the light of rear epitaxially grown InGaN trap generation by first epitaxially grown Al xin 1-x-yga yn trap absorbs and causes Efficiency Decreasing; In addition more shallow Al, xin 1-x-yga yn trap can be better to the blocking effect of backflow electronics.
The above is only the preferred embodiment of the present invention; it should be pointed out that for those skilled in the art, under the premise without departing from the principles of the invention; can also make some improvements and modifications, these improvements and modifications also should be considered as protection scope of the present invention.

Claims (17)

1. iii-nitride light emitting devices, comprising: N-shaped nitride layer and p-type nitride layer, and be positioned at active area between the two, wherein, described active area comprises the first quantum well and the second quantum well, the contiguous described N-shaped nitride layer of described the first quantum well, and its trap layer is Al xin 1-x-yga yn(0 < x < 1,0 < y < 1).
2. iii-nitride light emitting devices according to claim 1, is characterized in that: described Al xin 1-x-yga yfull x≤the y of the x of N trap and y span, x+y < 1.
3. iii-nitride light emitting devices according to claim 1, is characterized in that: described the first quantum well comprises that M is to Al xin 1-x-yga yn/GaN quantum well (0 < x < 1,0 < y < 1), the second quantum well comprises that N is to InGaN/GaN quantum well.
4. iii-nitride light emitting devices according to claim 3, is characterized in that: described M, N span meet 2≤M≤7,5≤M+N≤30.
5. according to the iii-nitride light emitting devices described in claim 1 or 3, it is characterized in that: described Al xin 1-x-yga ythe In of N trap and Al component are fixed, or are the gradual change of handstand V-type, trapezoidal gradual change or sine curve gradual change form along the direction of growth.
6. iii-nitride light emitting devices according to claim 3, is characterized in that: described Al xin 1-x-yga yn/GaN quantum well periodic thickness is less than the periodic thickness of InGaN/GaN quantum well.
7. iii-nitride light emitting devices according to claim 6, is characterized in that: described InGaN/GaN quantum well periodic thickness is 50 ~ 200, Al xin 1-x-yga yn/GaN quantum well periodic thickness is 30% ~ 70% of InGaN/GaN quantum well.
8. iii-nitride light emitting devices according to claim 3, is characterized in that: described Al xin 1-x-yga ythe band gap width minimum value of N trap is greater than the band gap width of described InGaN trap.
9. according to the iii-nitride light emitting devices described in claim 3 or 8, it is characterized in that: described Al xin 1-x-yga ythe band gap width of N trap is 2.9 ~ 3.4eV, and the band gap width of described InGaN trap is 2.3 ~ 2.8eV.
10. the preparation method of iii-nitride light emitting devices, comprise epitaxial growth N-shaped nitride layer, active area and p-type nitride layer successively, it is characterized in that: the active area of described formation comprises the first quantum well and the second quantum well, the contiguous described N-shaped nitride layer of described the first quantum well, its trap layer is Al xin 1-x-yga yn(0 < x < 1,0 < y < 1).
The preparation method of 11. iii-nitride light emitting devices according to claim 10, is characterized in that: described Al xin 1-x-yga yfull x≤the y of the x of N trap and y span, x+y < 1.
The preparation method of 12. iii-nitride light emitting devices according to claim 10, is characterized in that: the first quantum well of described formation comprises that M is to Al xin 1-x-yga yn/GaN quantum well (0 < x < 1,0 < y < 1), the second quantum well comprises that N is to InGaN/GaN quantum well.
The preparation method of 13. iii-nitride light emitting devices according to claim 12, is characterized in that: described M, N span meet 2≤M≤7,5≤M+N≤30.
The preparation method of 14. iii-nitride light emitting devices according to claim 12, is characterized in that: described M is to Al xin 1-x-yga ythe growth time of N/GaN quantum well is less than the growth time of N to InGaN/GaN quantum well.
The preparation method of 15. iii-nitride light emitting devices according to claim 12, is characterized in that: described Al xin 1-x-yga ythe growth temperature of N trap is higher than the growth temperature of InGaN trap.
The preparation method of 16. iii-nitride light emitting devices according to claim 12, is characterized in that: described M is to Al xin 1-x-yga yal in N/GaN quantum well xin 1-x-yga ythe growth temperature of N trap is between 750 ℃ to 820 ℃, and the growth temperature that GaN builds is between 820 ℃ to 900 ℃.
The preparation method of 17. iii-nitride light emitting devices according to claim 12, is characterized in that: described N is between 700 ℃ to 800 ℃ to the growth temperature of InGaN trap in InGaN/GaN quantum well, and the growth temperature that GaN builds is between 820 ℃ to 900 ℃.
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