CN102881784A - C delta-doped p-type GaN/AlGaN structure, LED epitaxial wafer structure and fabrication method - Google Patents
C delta-doped p-type GaN/AlGaN structure, LED epitaxial wafer structure and fabrication method Download PDFInfo
- Publication number
- CN102881784A CN102881784A CN201110196152XA CN201110196152A CN102881784A CN 102881784 A CN102881784 A CN 102881784A CN 201110196152X A CN201110196152X A CN 201110196152XA CN 201110196152 A CN201110196152 A CN 201110196152A CN 102881784 A CN102881784 A CN 102881784A
- Authority
- CN
- China
- Prior art keywords
- algan
- type gan
- gallium nitride
- doping
- nitride layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 13
- 229910002704 AlGaN Inorganic materials 0.000 title claims abstract 46
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 229910002601 GaN Inorganic materials 0.000 claims description 144
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 134
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 58
- RNQKDQAVIXDKAG-UHFFFAOYSA-N aluminum gallium Chemical compound [Al].[Ga] RNQKDQAVIXDKAG-UHFFFAOYSA-N 0.000 claims description 49
- 238000002360 preparation method Methods 0.000 claims description 30
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical compound C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 30
- 229910021529 ammonia Inorganic materials 0.000 claims description 28
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 claims description 25
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 8
- 229910052733 gallium Inorganic materials 0.000 claims description 8
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 claims description 8
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- 239000004411 aluminium Substances 0.000 claims description 6
- 150000004767 nitrides Chemical class 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 239000012159 carrier gas Substances 0.000 claims description 3
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 2
- 230000003247 decreasing effect Effects 0.000 abstract 1
- 230000000694 effects Effects 0.000 description 12
- 239000013078 crystal Substances 0.000 description 10
- 230000010287 polarization Effects 0.000 description 10
- 239000012535 impurity Substances 0.000 description 8
- 239000000463 material Substances 0.000 description 8
- 239000004047 hole gas Substances 0.000 description 5
- 230000002269 spontaneous effect Effects 0.000 description 5
- 239000002019 doping agent Substances 0.000 description 3
- 239000011777 magnesium Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- 230000004913 activation Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- MQBKFPBIERIQRQ-UHFFFAOYSA-N magnesium;cyclopenta-1,3-diene;cyclopentane Chemical compound [Mg+2].C=1C=C[CH-]C=1.[CH-]1[CH-][CH-][CH-][CH-]1 MQBKFPBIERIQRQ-UHFFFAOYSA-N 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 229910000069 nitrogen hydride Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
Images
Landscapes
- Led Devices (AREA)
Abstract
The invention provides a C delta-doped p-type GaN/AlGaN structure which comprises a p-type GaN/AlGaN unit, wherein the p-type GaN/AlGaN unit comprises a non-doped p-type GaN layer, an AlGaN layer with C-doped amount increased gradually, a C-doped layer and an AlGaN layer with the C-doped amount decreased gradually that are sequentially arranged. The invention further provides a fabrication method of the C delta-doped p-type GaN/AlGaN structure, an LED (light-emitting diode) epitaxial wafer structure provided with the C delta-doped p-type GaN/AlGaN structure, and a fabrication method of the LED epitaxial wafer structure. According to the C delta-doped p-type GaN/AlGaN structure, the LED epitaxial wafer structure and the fabrication method of the C delta-doped p-type GaN/AlGaN structure and the LED epitaxial wafer structure, the C delta-doped p-type GaN/AlGaN structure can generate high-concentration two-dimensional holes and high hole mobility, and therefore is high in conductivity.
Description
Technical field
The invention belongs to semiconductor applications, relate in particular to p-type GaN/AlGaN structure, LED epitaxial slice structure and preparation method that a kind of C δ mixes.
Background technology
Terminological interpretation:
C δ mixes: C(carbon) Delta of element mixes, and the mode of namely mixing with δ is mixed into C.
P type gallium nitride (GaN) and aluminum gallium nitride (AlGaN) epitaxial material with high conductivity are all extremely important for various electronics and opto-electronic device, but because Mg impurity forms deep energy level in the GaN epitaxial material, greatly reduce the activation efficiency of impurity, the mobility that adds hole under the heavy doping condition is also lower, causes the conductivity of p type GaN material to can not get effective raising always; And in the wider AlGaN epitaxial material of energy gap, the conductivity of p shaped material is just lower.Therefore, conductivity is not high in p type GaN and the AlGaN epitaxial material, causes the GaN of current p type and AlGaN material can't satisfy more and more application in the photoelectric devices such as laser, solar blind ultraviolet detector.Thus, also more and more urgent for the demand of high conductivity p-type GaN and AlGaN.
Summary of the invention
The purpose of this invention is to provide the p-type GaN/AlGaN structure that a kind of C δ mixes, the p-type GaN/AlGaN structure that described C δ mixes can produce the Two-Dimensional Hole of high concentration and high hole mobility, thereby has high conductivity; The present invention also provide the p-type GaN/AlGaN structure that this C δ mixes the preparation method, have LED epitaxial slice structure of the p-type GaN/AlGaN structure that this C δ mixes and preparation method thereof.
The objective of the invention is to be achieved through the following technical solutions:
The p-type GaN/AlGaN structure that a kind of C δ mixes, comprise p-type GaN/AlGaN unit, described p-type GaN/AlGaN unit comprises the aluminum gallium nitride layer that the p-type gallium nitride layer of tactic non-doping, aluminum gallium nitride layer, C doped layer and C doping that the C doping increases gradually reduce gradually.
The present invention also provides a kind of preparation method of p-type GaN/AlGaN structure of C δ doping, said method comprising the steps of:
S11, with trimethyl gallium as gallium source, ammonia as nitrogenous source, the p-type gallium nitride layer of the non-doping of growing;
S12, with trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, forms the aluminum gallium nitride layer that the C doping increases gradually at the p-type nitride layer of non-doping;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keep the flow of 85-110sccm constant, form the C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, form the aluminum gallium nitride layer that the C doping reduces gradually at the C doped layer.
The present invention also provides a kind of LED epitaxial slice structure, the substrate layer, resilient coating, intrinsic gallium nitride layer, N-shaped gallium nitride layer, luminescent layer and the p-type gallium nitride layer that comprise sequential cascade, the p-type GaN/AlGaN structure sheaf that wherein also comprises the C δ doping that is formed between luminescent layer and the p-type gallium nitride layer, described p-type GaN/AlGaN structure comprises p-type GaN/AlGaN unit, and described p-type GaN/AlGaN unit comprises the aluminum gallium nitride layer that the p-type gallium nitride layer of tactic non-doping, aluminum gallium nitride layer, C doped layer and C doping that the C doping increases gradually reduce gradually.
The present invention also provides a kind of preparation method of LED epitaxial slice structure, said method comprising the steps of:
S21, on substrate layer order grown buffer layer, intrinsic gallium nitride layer, N-shaped gallium nitride layer and luminescent layer;
S22, at the p-type GaN/AlGaN structure sheaf that luminescent layer growth C δ mixes, specifically may further comprise the steps:
S11, with trimethyl gallium as gallium source, ammonia as nitrogenous source, the p-type gallium nitride layer of the non-doping of growing;
S12, with trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, forms the aluminum gallium nitride layer that the C doping increases gradually at the p-type nitride layer of non-doping;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keep the flow of 85-110sccm constant, form the C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, form the aluminum gallium nitride layer that the C doping reduces gradually at the C doped layer;
S23, on the p-type GaN/AlGaN structure sheaf that C δ mixes the growing p-type gallium nitride layer.
In the p-type GaN/AlGaN structure that C δ provided by the invention mixes, LED epitaxial slice structure and preparation method thereof, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And the skew that causes positive and negative charge under the large effect of stress that produces of gallium nitride and the two Macrolattice mismatch of aluminum gallium nitride, thereby the piezoelectric polarization that causes, these all can form at the AlGaN/GaN place two-dimensional hole gas, thereby increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thereby reduced the contact resistance of device; Simultaneously, adopt the δ of C to mix, it is overlapping that the electron cloud by its doped layer occurs, and greatly weakens ionized impurity scattering, mobility is significantly improved, thereby has high conductivity.
Description of drawings
Fig. 1 is the p-type GaN/AlGaN structural representation that the C δ that provides of the embodiment of the invention mixes.
Fig. 2 is the p-type GaN/AlGaN structure preparation method schematic flow sheet that the C δ that provides of the embodiment of the invention mixes.
Fig. 3 is the LED epitaxial slice structure schematic diagram that the embodiment of the invention provides.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearer, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, is not intended to limit the present invention.
Please refer to shown in Figure 1, the p-type GaN/AlGaN structure that a kind of C δ mixes, comprise p-type GaN/AlGaN unit 10, described p-type GaN/AlGaN unit comprises the aluminum gallium nitride layer 14 that the p-type gallium nitride layer 11 of tactic non-doping, aluminum gallium nitride layer 12, C doped layer 13 and C doping that the C doping increases gradually reduce gradually.
In the p-type GaN/AlGaN structure that C δ provided by the invention mixes, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And the skew that causes positive and negative charge under the large effect of stress that produces of gallium nitride and the two Macrolattice mismatch of aluminum gallium nitride, thereby the piezoelectric polarization that causes, these all can form at the AlGaN/GaN place two-dimensional hole gas, thereby increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thereby reduced the contact resistance of device; Simultaneously, adopt the δ of C to mix, it is overlapping that the electron cloud by its doped layer occurs, and greatly weakens ionized impurity scattering, mobility is significantly improved, thereby has high conductivity.
Further, the dopant in the p-type GaN/AlGaN structure of the present invention is carbon (C), and it is as a kind of p-type dopant, has advantages of that also other p-type dopant can't reach: the diffusion coefficient that (1) is minimum; (2) lower ionization energy; (3) very high doping content (〉 10
20/ cm
3); (4) less impurity memory effect.
As a kind of specific embodiment, the p-type GaN/AlGaN structure that the C δ among Fig. 1 mixes only has a p-type GaN/AlGaN unit 10.Certainly, the p-type GaN/AlGaN structure that C δ of the present invention mixes is not limited to this, those skilled in the art can also be as required, a plurality of p-type GaN/AlGaN unit 10 is set, each p-type GaN/AlGaN unit 10 stacked arrangement, namely the aluminum gallium nitride layer 14 that reduces gradually of the C doping of first p-type GaN/AlGaN unit 10 is connected with the p-type gallium nitride layer 11 of the non-doping of second p-type GaN/AlGaN unit 10; Preferably, the number of described p-type GaN/AlGaN unit is 2-7, can improve better hole concentration thus, and relative obtains better crystal structure.
Preferably, the thickness of described each p-type GaN/AlGaN unit 10 is the 5-8 nanometer, form the p-type GaN/AlGaN unit 10 in this thickness range, can play the effect of simplifying technique, conservation and good crystal structure, and can more effective raising hole concentration.
Please refer to shown in Figure 2ly, the present invention also provides the preparation method of the p-type GaN/AlGaN structure that a kind of C δ mixes, and said method comprising the steps of:
S11, with trimethyl gallium (TMGa) as gallium source, ammonia (NH3) as nitrogenous source, the p-type gallium nitride layer of the non-doping of growing;
S12, with trimethyl aluminium (TMAl) as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, forms the aluminum gallium nitride layer that the C doping increases gradually at the p-type nitride layer of non-doping;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keep the flow of 85-110sccm constant, form the C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, form the aluminum gallium nitride layer that the C doping reduces gradually at the C doped layer.
Among the preparation method of the p-type GaN/AlGaN structure that C δ provided by the invention mixes, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And the skew that causes positive and negative charge under the large effect of stress that produces of gallium nitride and the two Macrolattice mismatch of aluminum gallium nitride, thereby the piezoelectric polarization that causes, these all can form at the AlGaN/GaN place two-dimensional hole gas, thereby increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thereby reduced the contact resistance of device; Simultaneously, adopt the δ of C to mix, it is overlapping that the electron cloud by its doped layer occurs, and greatly weakens ionized impurity scattering, mobility is significantly improved, thereby has high conductivity.
As specific embodiment, but repeating step S11, S12, S13 and S14 at least 1 time so move in circles, form a plurality of p-type GaN/AlGaN unit, each p-type GaN/AlGaN unit stacked arrangement.Wherein, but described repeating step S11, S12, S13 and S14 comprise at least for 1 time: step S11, S12, S13 and S14 can repeat, and also can not repeat; If repeat, namely with step S11, S12, S13 and S14 as an independent cycle, can repeat at least 1 time, will form thus a plurality of p-type GaN/AlGaN unit 10 as shown in Figure 1, each p-type GaN/AlGaN unit 10 stacked arrangement, namely the aluminum gallium nitride layer 14 that reduces gradually of the C doping of first p-type GaN/AlGaN unit 10 is connected with the p-type gallium nitride layer 11 of the non-doping of second p-type GaN/AlGaN unit 10; If do not repeat, just only has a p-type GaN/AlGaN unit 10 as shown in Figure 1 in the p-type GaN/AlGaN structure that C δ mixes.Preferably, the number of times that described step S11, S12, S13 and S14 repeat is 1-6, and namely the number of described p-type GaN/AlGaN unit is total up to 2-7, can improve better hole concentration thus, and relative obtains better crystal structure.
As concrete execution mode, in the preparation process of described p-type GaN/AlGaN unit, pass into pure hydrogen (H
2) as carrier gas; Namely in each step preparation process of step S11, S12, S13 and S14, can pass into pure hydrogen in the reative cell as carrier gas.
As specific embodiment, in described step S12, the flow of trimethyl gallium is 35-55sccm, and the flow of ammonia is 28000-32000sccm, can grow better high-quality crystal structure thus.
Preferably, in described step S12, the duration of the aluminum gallium nitride layer that formation C doping increases gradually is 10-15 second, can grow better high-quality crystal structure thus.
Preferably, among the described step S13, the duration that forms the C doped layer is 3-5 second, can grow better high-quality crystal structure thus.
Preferably, among the described step S14, the duration of the aluminum gallium nitride layer that formation C doping reduces gradually is 10-15 second, can grow better high-quality crystal structure thus.
Preferably, the thickness of described each p-type GaN/AlGaN unit is the 5-8 nanometer, forms the p-type GaN/AlGaN unit 10 in this thickness range, can play the effect of simplifying technique, conservation and good crystal structure, and can more effective raising hole concentration.
Please refer to shown in Figure 3, the present invention also provides a kind of LED epitaxial slice structure, the substrate layer 1 that comprises sequential cascade, resilient coating 2, intrinsic gallium nitride layer 3, N-shaped gallium nitride layer 4, luminescent layer 5 and p-type gallium nitride layer 6, the p-type GaN/AlGaN structure sheaf that wherein also comprises the C δ doping that is formed between luminescent layer 5 and the p-type gallium nitride layer 6, described p-type GaN/AlGaN structure comprises p-type GaN/AlGaN unit, and described p-type GaN/AlGaN unit comprises the p-type gallium nitride layer 11 of tactic non-doping, the aluminum gallium nitride layer 12 that the C doping increases gradually, the aluminum gallium nitride layer 14 that C doped layer 13 and C doping reduce gradually.
In the LED epitaxial slice structure provided by the invention, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And the skew that causes positive and negative charge under the large effect of stress that produces of gallium nitride and the two Macrolattice mismatch of aluminum gallium nitride, thereby the piezoelectric polarization that causes, these all can form at the AlGaN/GaN place two-dimensional hole gas, thereby increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thereby reduced the contact resistance of device; Simultaneously, adopt the δ of C to mix, it is overlapping that the electron cloud by its doped layer occurs, and greatly weakens ionized impurity scattering, mobility is significantly improved, thereby has high conductivity.
As a kind of specific embodiment, the p-type GaN/AlGaN structure that the C δ among Fig. 3 mixes only has a p-type GaN/AlGaN unit.Certainly, the p-type GaN/AlGaN structure that C δ of the present invention mixes is not limited to this, those skilled in the art can also be as required, a plurality of p-type GaN/AlGaN unit is set, each p-type GaN/AlGaN unit stacked arrangement, namely the aluminum gallium nitride layer 14 that reduces gradually of the C doping of first p-type GaN/AlGaN unit is connected with the p-type gallium nitride layer 11 of the non-doping of second p-type gallium nitride unit; Preferably, the number of described p-type gallium nitride unit is 2-7, can improve better hole concentration thus, and relative obtains better crystal structure.
The present invention also provides a kind of preparation method of LED epitaxial slice structure, said method comprising the steps of:
S21, on substrate layer order grown buffer layer, intrinsic gallium nitride layer, N-shaped gallium nitride layer and luminescent layer;
S22, at the p-type GaN/AlGaN structure sheaf that luminescent layer growth C δ mixes, specifically may further comprise the steps:
S11, with trimethyl gallium as gallium source, ammonia as nitrogenous source, the p-type gallium nitride layer of the non-doping of growing;
S12, with trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, forms the aluminum gallium nitride layer that the C doping increases gradually at the p-type nitride layer of non-doping;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keep the flow of 85-110sccm constant, form the C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, form the aluminum gallium nitride layer that the C doping reduces gradually at the C doped layer;
S23, on the p-type GaN/AlGaN structure sheaf that C δ mixes the growing p-type gallium nitride layer.
Among the preparation method of LED epitaxial slice structure provided by the invention, the asymmetric positive and negative charge center that causes of gallium nitride and aluminum gallium nitride structure cell does not overlap, and produces strong spontaneous polarization effect; And the skew that causes positive and negative charge under the large effect of stress that produces of gallium nitride and the two Macrolattice mismatch of aluminum gallium nitride, thereby the piezoelectric polarization that causes, these all can form at the AlGaN/GaN place two-dimensional hole gas, thereby increase substantially the hole concentration of top layer AlGaN, reduce surface resistivity, thereby reduced the contact resistance of device; Simultaneously, adopt the δ of C to mix, it is overlapping that the electron cloud by its doped layer occurs, and greatly weakens ionized impurity scattering, mobility is significantly improved, thereby has high conductivity.
In the preparation method of LED epitaxial slice structure provided by the invention, choosing of the growing method of described each layer of step S21 and material is well known to those skilled in the art, and therefore repeats no more.
The mode of the p-type GaN/AlGaN structure sheaf that mixes at luminescent layer growth C δ among the step S22 is identical with the preparation method of the p-type GaN/AlGaN structure that aforementioned C δ mixes.As specific embodiment, but repeating step S11, S12, S13 and S14 at least 1 time so move in circles, form a plurality of p-type GaN/AlGaN unit, each p-type GaN/AlGaN unit stacked arrangement; Wherein, but described repeating step S11, S12, S13 and S14 comprise at least for 1 time: step S11, S12, S13 and S14 can repeat, and also can not repeat; If repeat, namely with step S11, S12, S13 and S14 as an independent cycle, can repeat at least 1 time, will form thus a plurality of p-type GaN/AlGaN unit as shown in Figure 1, each p-type GaN/AlGaN unit stacked arrangement, namely the aluminum gallium nitride layer 14 that reduces gradually of the C doping of first p-type GaN/AlGaN unit 10 is connected with the p-type gallium nitride layer 11 of the non-doping of second p-type GaN/AlGaN unit 10; If do not repeat, just only has a p-type GaN/AlGaN unit in the p-type GaN/AlGaN structure that C δ mixes.Preferably, the number of times that described step S11, S12, S13 and S14 repeat is 1-6, and namely the number of described p-type GaN/AlGaN unit is total up to 2-7, can improve better hole concentration thus, and relative obtains better crystal structure.
As a kind of specific embodiment, in described step S23, specifically comprise: with trimethyl gallium (TMGa) as gallium source, ammonia (NH
3) as nitrogenous source, dicyclopentadienyl magnesium (Cp
2Mg) as p type doped source, the p-type gallium nitride layer that the p-type gallium nitride structure layer growth Mg that mixes at C δ mixes.
The above only is preferred embodiment of the present invention, not in order to limiting the present invention, all any modifications of doing within the spirit and principles in the present invention, is equal to and replaces and improvement etc., all should be included within protection scope of the present invention.
Claims (20)
1. the C δ p-type GaN/AlGaN structure of mixing, it is characterized in that, comprise p-type GaN/AlGaN unit, described p-type GaN/AlGaN unit comprises the aluminum gallium nitride layer that the p-type gallium nitride layer of tactic non-doping, aluminum gallium nitride layer, C doped layer and C doping that the C doping increases gradually reduce gradually.
2. the p-type GaN/AlGaN structure of C δ doping according to claim 1 is characterized in that, described p-type GaN/AlGaN unit is a plurality of, each p-type GaN/AlGaN unit stacked arrangement.
3. the p-type GaN/AlGaN structure of C δ doping according to claim 2 is characterized in that, the thickness of described each p-type GaN/AlGaN unit is the 5-8 nanometer.
4. the p-type GaN/AlGaN structure of C δ doping according to claim 2 is characterized in that, the number of described p-type GaN/AlGaN unit is 2-7.
5. the preparation method of the p-type GaN/AlGaN structure of a C δ doping is characterized in that, said method comprising the steps of:
S11, with trimethyl gallium as gallium source, ammonia as nitrogenous source, the p-type gallium nitride layer of the non-doping of growing;
S12, with trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, forms the aluminum gallium nitride layer that the C doping increases gradually at the p-type nitride layer of non-doping;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keep the flow of 85-110sccm constant, form the C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, form the aluminum gallium nitride layer that the C doping reduces gradually at the C doped layer.
6. the preparation method of the C δ according to claim 5 p-type GaN/AlGaN structure of mixing, it is characterized in that, repeating step S11, S12, S13 and S14 at least 1 time so move in circles, form a plurality of p-type GaN/AlGaN unit, each p-type GaN/AlGaN unit stacked arrangement.
7. according to claim 5 or the preparation method of the 6 described C δ p-type GaN/AlGaN structure of mixing, it is characterized in that, in the preparation process of described p-type GaN/AlGaN unit, pass into pure hydrogen as carrier gas.
8. according to claim 5 or the preparation method of the 6 described C δ p-type GaN/AlGaN structure of mixing, it is characterized in that, among the described step S12, the flow of trimethyl gallium is 35-55sccm, and the flow of ammonia is 28000-32000sccm.
9. according to claim 5 or the preparation method of the 6 described C δ p-type GaN/AlGaN structure of mixing, it is characterized in that, among the described step S12, the duration that forms the aluminum gallium nitride layer that the C doping increases gradually is 10-15 second.
10. according to claim 5 or the preparation method of the 6 described C δ p-type GaN/AlGaN structure of mixing, it is characterized in that, among the described step S13, the duration that forms the C doped layer is 3-5 second.
11. according to claim 5 or the preparation method of the 6 described C δ p-type GaN/AlGaN structure of mixing, it is characterized in that, among the described step S14, the duration that forms the aluminum gallium nitride layer that the C doping reduces gradually is 10-15 second.
12. the preparation method of the p-type GaN/AlGaN structure that C δ according to claim 6 mixes is characterized in that the thickness of described each p-type GaN/AlGaN unit is the 5-8 nanometer.
13. the preparation method of the p-type GaN/AlGaN structure that C δ according to claim 6 mixes is characterized in that, the number of times that described step S11, S12, S13 and S14 repeat is 1-6.
14. LED epitaxial slice structure, the substrate layer, resilient coating, intrinsic gallium nitride layer, N-shaped gallium nitride layer, luminescent layer and the p-type gallium nitride layer that comprise sequential cascade, it is characterized in that, the p-type GaN/AlGaN structure sheaf that also comprises the C δ doping that is formed between luminescent layer and the p-type gallium nitride layer, described p-type GaN/AlGaN structure comprises p-type GaN/AlGaN unit, and described p-type GaN/AlGaN unit comprises the aluminum gallium nitride layer that the p-type gallium nitride layer of tactic non-doping, aluminum gallium nitride layer, C doped layer and C doping that the C doping increases gradually reduce gradually.
15. LED epitaxial slice structure according to claim 14 is characterized in that, the number of described p-type GaN/AlGaN unit is a plurality of, each p-type GaN/AlGaN unit stacked arrangement.
16. LED epitaxial slice structure according to claim 15 is characterized in that, the number of described p-type GaN/AlGaN unit is 2-7.
17. the preparation method of a LED epitaxial slice structure is characterized in that, said method comprising the steps of:
S21, on substrate layer order grown buffer layer, intrinsic gallium nitride layer, N-shaped gallium nitride layer and luminescent layer;
S22, at the p-type GaN/AlGaN structure sheaf that luminescent layer growth C δ mixes, specifically may further comprise the steps:
S11, with trimethyl gallium as gallium source, ammonia as nitrogenous source, the p-type gallium nitride layer of the non-doping of growing;
S12, with trimethyl aluminium as C doped source and aluminium source, keep the constant flow of trimethyl gallium and ammonia constant, the flow of trimethyl aluminium is gradient to 85-110sccm from 0, forms the aluminum gallium nitride layer that the C doping increases gradually at the p-type nitride layer of non-doping;
S13, cut-out trimethyl gallium and ammonia source, trimethyl aluminium keep the flow of 85-110sccm constant, form the C doped layer on dormant aluminum gallium nitride surface;
S14, open trimethyl gallium and ammonia source, the flow of trimethyl aluminium is gradient to 0, form the aluminum gallium nitride layer that the C doping reduces gradually at the C doped layer;
S23, on the p-type GaN/AlGaN structure sheaf that C δ mixes the growing p-type gallium nitride layer.
18. the preparation method of LED epitaxial slice structure according to claim 17, it is characterized in that, repeating step S11, S12, S13 and S14 at least 1 time so move in circles, form a plurality of p-type GaN/AlGaN unit, each p-type GaN/AlGaN unit stacked arrangement.
19. the preparation method of LED epitaxial slice structure according to claim 18 is characterized in that, the number of times that described step S11, S12, S13 and S14 repeat is 1-6.
20. the preparation method of LED epitaxial slice structure according to claim 17, it is characterized in that, specifically comprise among the described step S23: with trimethyl gallium as gallium source, ammonia as nitrogenous source, Cp2 Mg is as p type doped source, at the p-type gallium nitride layer of the p-type GaN/AlGaN structure sheaf growth Mg of C δ doping doping.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110196152.XA CN102881784B (en) | 2011-07-14 | 2011-07-14 | The p-type GaN/AlGaN structure that C δ adulterates, LED structure and preparation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201110196152.XA CN102881784B (en) | 2011-07-14 | 2011-07-14 | The p-type GaN/AlGaN structure that C δ adulterates, LED structure and preparation method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102881784A true CN102881784A (en) | 2013-01-16 |
| CN102881784B CN102881784B (en) | 2016-02-03 |
Family
ID=47483048
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201110196152.XA Expired - Fee Related CN102881784B (en) | 2011-07-14 | 2011-07-14 | The p-type GaN/AlGaN structure that C δ adulterates, LED structure and preparation method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN102881784B (en) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103560184A (en) * | 2013-09-25 | 2014-02-05 | 电子科技大学 | PN junction of light emitting diode and manufacturing method thereof |
| CN105118902A (en) * | 2015-08-18 | 2015-12-02 | 西安电子科技大学 | Yellow LED material based on m-plane SiC substrate and manufacturing method thereof |
| CN106784204A (en) * | 2016-12-21 | 2017-05-31 | 安徽三安光电有限公司 | A kind of gallium nitride based light emitting diode structure and preparation method thereof |
| CN107104174A (en) * | 2013-01-25 | 2017-08-29 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN107170863A (en) * | 2016-03-08 | 2017-09-15 | 新世纪光电股份有限公司 | Semiconductor structure |
| USRE47088E1 (en) | 2012-11-19 | 2018-10-16 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US10147845B2 (en) | 2012-11-19 | 2018-12-04 | Genesis Photonics Inc. | Semiconductor structure |
| US10153394B2 (en) | 2012-11-19 | 2018-12-11 | Genesis Photonics Inc. | Semiconductor structure |
| CN109997233A (en) * | 2016-12-01 | 2019-07-09 | 奥斯兰姆奥普托半导体有限责任公司 | Emit the semiconductor body of radiation and the method for manufacturing layer sequence |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
| CN114038971A (en) * | 2021-11-15 | 2022-02-11 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0982995A (en) * | 1995-09-13 | 1997-03-28 | Hitachi Cable Ltd | Compound semiconductor wafer and solar cell |
| CN101069289A (en) * | 2004-12-23 | 2007-11-07 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device and fabrication method thereof |
| CN101073160A (en) * | 2004-12-23 | 2007-11-14 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device and fabrication method thereof |
| CN101095236A (en) * | 2004-11-11 | 2007-12-26 | 艾利森电讯公司 | Method for dopant calibration of delta doped multilayered structure |
| CN101289173A (en) * | 2008-06-04 | 2008-10-22 | 厦门大学 | Method for preparing p-typed III-nitride material impured at superlattice positions |
| US20110057198A1 (en) * | 2009-08-28 | 2011-03-10 | The Regents Of The University Of California | TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON (10-10)-PLANE GaN BY DELTA-DOPING |
-
2011
- 2011-07-14 CN CN201110196152.XA patent/CN102881784B/en not_active Expired - Fee Related
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0982995A (en) * | 1995-09-13 | 1997-03-28 | Hitachi Cable Ltd | Compound semiconductor wafer and solar cell |
| CN101095236A (en) * | 2004-11-11 | 2007-12-26 | 艾利森电讯公司 | Method for dopant calibration of delta doped multilayered structure |
| CN101069289A (en) * | 2004-12-23 | 2007-11-07 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device and fabrication method thereof |
| CN101073160A (en) * | 2004-12-23 | 2007-11-14 | Lg伊诺特有限公司 | Nitride semiconductor light emitting device and fabrication method thereof |
| CN101289173A (en) * | 2008-06-04 | 2008-10-22 | 厦门大学 | Method for preparing p-typed III-nitride material impured at superlattice positions |
| US20110057198A1 (en) * | 2009-08-28 | 2011-03-10 | The Regents Of The University Of California | TECHNIQUE FOR DEVELOPMENT OF HIGH CURRENT DENSITY HETEROJUNCTION FIELD EFFECT TRANSISTORS BASED ON (10-10)-PLANE GaN BY DELTA-DOPING |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10381511B2 (en) | 2012-11-19 | 2019-08-13 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| USRE47088E1 (en) | 2012-11-19 | 2018-10-16 | Genesis Photonics Inc. | Nitride semiconductor structure and semiconductor light emitting device including the same |
| US10147845B2 (en) | 2012-11-19 | 2018-12-04 | Genesis Photonics Inc. | Semiconductor structure |
| US10153394B2 (en) | 2012-11-19 | 2018-12-11 | Genesis Photonics Inc. | Semiconductor structure |
| CN107104174A (en) * | 2013-01-25 | 2017-08-29 | 新世纪光电股份有限公司 | Nitride semiconductor structure and semiconductor light-emitting elements |
| CN103560184A (en) * | 2013-09-25 | 2014-02-05 | 电子科技大学 | PN junction of light emitting diode and manufacturing method thereof |
| CN105118902A (en) * | 2015-08-18 | 2015-12-02 | 西安电子科技大学 | Yellow LED material based on m-plane SiC substrate and manufacturing method thereof |
| CN107170863B (en) * | 2016-03-08 | 2020-06-23 | 新世纪光电股份有限公司 | Semiconductor structure |
| CN107170863A (en) * | 2016-03-08 | 2017-09-15 | 新世纪光电股份有限公司 | Semiconductor structure |
| US10319879B2 (en) | 2016-03-08 | 2019-06-11 | Genesis Photonics Inc. | Semiconductor structure |
| US10468549B2 (en) | 2016-09-19 | 2019-11-05 | Genesis Photonics Inc. | Semiconductor device containing nitrogen |
| CN109997233A (en) * | 2016-12-01 | 2019-07-09 | 奥斯兰姆奥普托半导体有限责任公司 | Emit the semiconductor body of radiation and the method for manufacturing layer sequence |
| US10971653B2 (en) | 2016-12-01 | 2021-04-06 | Osram Oled Gmbh | Radiation-emitting semiconductor body and method of producing a semiconductor layer sequence |
| CN106784204B (en) * | 2016-12-21 | 2019-01-18 | 安徽三安光电有限公司 | A kind of gallium nitride based light emitting diode structure and preparation method thereof |
| CN106784204A (en) * | 2016-12-21 | 2017-05-31 | 安徽三安光电有限公司 | A kind of gallium nitride based light emitting diode structure and preparation method thereof |
| CN114038971A (en) * | 2021-11-15 | 2022-02-11 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN114038971B (en) * | 2021-11-15 | 2023-08-01 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
Also Published As
| Publication number | Publication date |
|---|---|
| CN102881784B (en) | 2016-02-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN102881784B (en) | The p-type GaN/AlGaN structure that C δ adulterates, LED structure and preparation method | |
| CN102368519B (en) | A kind of method improving semiconductor diode multiple quantum well light emitting efficiency | |
| CN101582478B (en) | Multi-quantum-well structure used in photoelectron device and manufacturing method thereof | |
| CN102820395B (en) | LED structure comprising quantum barriers with gradient potential barrier heights and method for manufacturing LED structure | |
| CN108365069B (en) | Preparation method of high-brightness V-shaped polarized doped deep ultraviolet LED | |
| CN103489975B (en) | A kind of nitrogen polar surface light emitting diode with tunnel junction structure | |
| CN102103990B (en) | Preparation method of multiple quantum well structure for photoelectric device | |
| CN105990479A (en) | GaN-based light emitting diode epitaxial structure and manufacturing method thereof | |
| CN103647009A (en) | Nitride light emitting diode and manufacturing method thereof | |
| CN103400914B (en) | A kind of epitaxial structure improving gallium nitrate based current expansion and growing method thereof | |
| CN104882522A (en) | Dopant-free AlGaN-based ultraviolet light-emitting diode and preparation method | |
| CN112366256B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN108831974A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN102738340B (en) | LED structure using ALInN quantum barrier to increase GaN-based LED inner quantum efficiency and manufacturing method thereof | |
| CN104916745A (en) | GaN-based LED epitaxial structure and preparation method thereof | |
| CN108198920A (en) | Light emitting diode epitaxial wafer and preparation method thereof | |
| CN109449264A (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN106876530B (en) | Epitaxial wafer of gallium nitride-based light-emitting diode and manufacturing method thereof | |
| CN108717954A (en) | A kind of LED epitaxial slice and its growing method | |
| CN111180527A (en) | GaN-based PN diode and preparation method thereof | |
| CN104465914A (en) | LED structure with barrier height gradient superlattice layer and manufacturing method thereof | |
| CN109065682B (en) | A kind of LED epitaxial slice and its manufacturing method | |
| CN105304778B (en) | Improve epitaxial structure of GaN base LED antistatic properties and preparation method thereof | |
| CN108987544B (en) | Light emitting diode epitaxial wafer and manufacturing method thereof | |
| CN105428477A (en) | GaN-based LED epitaxial wafer and preparation method therefor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20191225 Address after: 518119 1 Yanan Road, Kwai Chung street, Dapeng New District, Shenzhen, Guangdong Patentee after: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. Address before: BYD 518118 Shenzhen Road, Guangdong province Pingshan New District No. 3009 Patentee before: BYD Co.,Ltd. |
|
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: BYD Semiconductor Co.,Ltd. Address after: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee after: BYD Semiconductor Co.,Ltd. Address before: 518119 No.1 Yan'an Road, Kuiyong street, Dapeng New District, Shenzhen City, Guangdong Province Patentee before: SHENZHEN BYD MICROELECTRONICS Co.,Ltd. |
|
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160203 |