CN109300854A - LED epitaxial wafer growing method - Google Patents
LED epitaxial wafer growing method Download PDFInfo
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- CN109300854A CN109300854A CN201811209566.XA CN201811209566A CN109300854A CN 109300854 A CN109300854 A CN 109300854A CN 201811209566 A CN201811209566 A CN 201811209566A CN 109300854 A CN109300854 A CN 109300854A
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- 238000000034 method Methods 0.000 title claims abstract description 44
- 229910002704 AlGaN Inorganic materials 0.000 claims abstract description 143
- 230000008859 change Effects 0.000 claims abstract description 142
- 239000000758 substrate Substances 0.000 claims abstract description 41
- 229910052594 sapphire Inorganic materials 0.000 claims abstract description 39
- 239000010980 sapphire Substances 0.000 claims abstract description 39
- 230000026267 regulation of growth Effects 0.000 claims abstract description 35
- 238000001816 cooling Methods 0.000 claims abstract description 15
- 238000000137 annealing Methods 0.000 claims abstract description 7
- 239000011777 magnesium Substances 0.000 claims description 28
- 239000000470 constituent Substances 0.000 claims description 18
- 230000008569 process Effects 0.000 claims description 9
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 7
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- 229910052739 hydrogen Inorganic materials 0.000 claims description 7
- 239000001257 hydrogen Substances 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 238000002156 mixing Methods 0.000 claims description 7
- 230000009467 reduction Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 claims description 6
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 claims 1
- 239000013078 crystal Substances 0.000 abstract description 15
- 230000007547 defect Effects 0.000 abstract description 9
- 238000000407 epitaxy Methods 0.000 abstract description 5
- 238000012797 qualification Methods 0.000 abstract description 4
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- 238000002360 preparation method Methods 0.000 description 2
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- 241001025261 Neoraja caerulea Species 0.000 description 1
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- 230000000903 blocking effect Effects 0.000 description 1
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- 229910052681 coesite Inorganic materials 0.000 description 1
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- 238000007796 conventional method Methods 0.000 description 1
- 239000007771 core particle Substances 0.000 description 1
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- 238000002425 crystallisation Methods 0.000 description 1
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/84—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body
- H01L21/86—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being other than a semiconductor body, e.g. being an insulating body the insulating body being sapphire, e.g. silicon on sapphire structure, i.e. SOS
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- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
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- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
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- H01L33/26—Materials of the light emitting region
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Abstract
This application discloses a kind of LED epitaxial wafer growing methods, method includes the Sapphire Substrate for handling surface and having AlN film, the sequentially three gradual change AlGaN layer of one gradual change AlGaN layer of growth regulation, two gradual change AlGaN layer of growth regulation and growth regulation in the Sapphire Substrate, growing low temperature buffer layer grows the GaN layer that undopes, the N-type GaN layer of growth doping Si, cyclical growth active layer MQW, growing P-type AlGaN layer, the p-type GaN layer and cooling down of growth doping Mg.One gradual change AlGaN layer of growth regulation, the second gradual change AlGaN layer and third gradual change AlGaN layer reduce dislocation density, improve crystal quality, reduce epitaxial wafer warpage, improve the qualification rate of GaN epitaxy piece, improve LED luminous efficiency.Gradual change AlGaN layer is made annealing treatment, keeps entire epi-layer surface more smooth, surface hexagonal defect and concave hole are less, and entire appearance is more preferable.
Description
Technical field
The present invention relates to LED epitaxial wafer growing technology fields, specifically, being related to a kind of LED epitaxial wafer growing method.
Background technique
The GaN growth method generallyd use at present is to be patterned on a sapphire substrate.Sapphire crystal is third
Best one of substrate material is grown for semiconductor material GaN epitaxial layer, single crystal preparation technique is mature.GaN is blue-ray LED system
Make substrate.The wherein substrate material SiC of GaN epitaxial layer, it is small with GaN lattice mismatch, only 3.4%, but its thermal expansion system
Number is larger with GaN difference, easily leads to GaN epitaxial layer fracture, and manufacturing cost is high, is sapphire 10 times；Substrate material Si
It is at low cost, it is big with GaN lattice mismatch, reach 17%, growth GaN is more difficult, and luminous efficiency is too low compared with sapphire；Substrate
Material sapphire crystal structure is identical (the symmetrical wurtzite crystal structure of six sides), big by 13% with GaN lattice mismatch, easily leads to
GaN epitaxial layer high dislocation density can drop for this purpose, AlN or low temperature GaN epitaxial layer or SiO2 layers etc. are added on a sapphire substrate
Low GaN epitaxial layer dislocation density.
There are biggish lattice mismatch (13-16%) and thermal mismatchings between sapphire and GaN, so that the mistake in GaN epitaxial layer
Density of misfit dislocations is higher by (~1010cm-2), influence GaN epitaxial layer quality, thus influence device quality (luminous efficiency, drain electrode,
Service life etc.).
Traditional way is using low temperature buffer layer, by adjusting the nitridation of Sapphire Substrate, the growth of low temperature buffer layer
Temperature, thickness of buffer layer etc., to improve the crystal quality of GaN epitaxial layer.But due to low temperature buffer layer still fall within it is heterogeneous
Extension, the crystal quality promoted are limited.In addition, since there are biggish lattice mismatches between each epitaxial thin-film layer, so that outside
Prolong the effect that crystal film is constantly subjected to stress during the growth process, causes epitaxial wafer to bend, warpage.Conventional cryogenic buffering
For layer method when carrying out epitaxial crystal growth on large-size sapphire substrate, epitaxial wafer warpage is big, leads to subsequent chip manufacturing mistake
Fragment rate height is ground in journey, product yield is low.
Summary of the invention
In view of this, the object of the present invention is to provide a kind of LED epitaxial wafer growing methods, which is characterized in that comprising steps of
Handle the Sapphire Substrate that surface has AlN film；
Sequentially one gradual change AlGaN layer of growth regulation, two gradual change AlGaN layer of growth regulation, Yi Jisheng in the Sapphire Substrate
Long third gradual change AlGaN layer, wherein
The one gradual change AlGaN layer of growth regulation includes: the reaction cavity pressure for controlling 400-600mbar, is passed through to reaction chamber
Flow is the NH of 60-70L/min3, 90-95L/min N2, the source TMAl of TMGa, 230-250sccm of 100-110sccm, life
0.1 DEG C is reduced with each second in growth process, growth temperature is reduced to 500 DEG C from 550 DEG C of gradual changes, in the Sapphire Substrate
Growth thickness D1 is the first gradual change AlGaN layer of 8-10nm, and wherein the molar constituent of Al is 10-12%；
The two gradual change AlGaN layer of growth regulation includes: that growth temperature is increased to 700 DEG C, keeps reaction cavity pressure gentle
It is constant that body is passed through flow, increases 0.2 DEG C in growth course with each second and growth temperature is increased to 800 DEG C from 700 DEG C of gradual changes,
Growth thickness D2 is the second gradual change AlGaN layer of 8-10nm in the first gradual change AlGaN layer, and wherein the molar constituent of Al is
10-12%, D2=D1；
The three gradual change AlGaN layer of growth regulation includes: to improve reaction cavity pressure to 800mbar, and growth temperature is from 800 DEG C
600 DEG C are reduced to, keeping gas to be passed through, flow is constant, and cavity pressure and growth temperature gradual change simultaneously are reacted in control, wherein reaction chamber
Pressure is reduced from 800mbar gradual change to 650mbar with reduction 1mbar per second, and growth temperature reduces 1 DEG C from 600 DEG C gradually with per second
Become and reduces to 450 DEG C, the of the temperature, pressure gradual change simultaneously that growth thickness D3 is 8-10nm in the second gradual change AlGaN layer
Three gradual change AlGaN layers, wherein the molar constituent of Al is 10-12%, D3=D2；
It keeps reaction cavity pressure between 850-900mbar, controls N2Flow is 150-160L/min, control reaction room temperature
Degree between 680-720 DEG C, to the first gradual change AlGaN layer, the second gradual change AlGaN layer and third gradual change AlGaN layer into
The annealing of row 20s；
Growing low temperature buffer layer；
Grow the GaN layer that undopes；
The N-type GaN layer of growth doping Si；
Cyclical growth active layer MQW；
Growing P-type AlGaN layer；
The p-type GaN layer of growth doping Mg；
And cooling down.
Preferably, at 1000-1200 DEG C, reaction cavity pressure maintains high-temperature process under the hydrogen atmosphere of 100-150mbar
There are Sapphire Substrate 5-10 minutes of AlN film on surface.
Preferably, the growing low temperature buffer layer, further for, be cooled at 550-650 DEG C, reaction cavity pressure maintain
400-600mbar, being passed through flow is 10000-20000sccm NH3, 50-100sccm TMGa, 100-130L/min H2,
Growth thickness is the low temperature buffer layer of 20-50nm in the third gradual change AlGaN layer.
Preferably, the growth undopes GaN layer, further to increase the temperature to 1000-1200 DEG C, react cavity pressure
150-300mbar is maintained, the NH that flow is 30000-40000sccm is passed through3, 200sccm-400sccm TMGa, 100L/
The H of min-130L/min2, on the low temperature buffer layer 2-4 μm of continued propagation of the GaN layer that undopes.
Preferably, the N-type GaN layer of the growth doping Si, further for, keep reaction cavity pressure in 150-300mbar,
It is kept for 1000-1100 DEG C of temperature, is passed through the NH that flow is 40L/min-60L/min3, 200sccm-300sccm TMGa, 50L/
The H of min-90L/min2And the SiH of 20sccm-50sccm4, the N of 2-4 μm of continued propagation doping Si in the GaN layer that undopes
Type GaN layer, Si doping concentration 5E+18-1E+19atoms/cm3。
Preferably, the cyclical growth active layer MQW, further for,
Reaction cavity pressure maintains 300-400mbar, 700-750 DEG C of low temperature, is passed through the NH of 50000-60000sccm3、
The flow of the TEGa and TMIn of 100-150sccm, TMIn are gradually increased with increase 25-52sccm per second from 150-170sccm
To 1500-1700sccm, the In of 30-50s is growny1Ga(1-y1)N, growth thickness D4, In doping concentration is with increase 4E+ per second
17-7E+17atoms/cm3From 1E+19atoms/cm3Fade to 3E+19atoms/cm3；
Maintain growth conditions constant, the flow for stablizing TMIn is 1500-1700sccm, grows 100-150s's
Iny2Ga(1-y2)N, growth thickness D5, In doping concentration 1E+20-3E+20atoms/cm3, the range of D4+D5 is 3-3.5nm,
The range of y1 and y2 is 0.015-0.25, and wherein y1 and y2 are unequal；
Increase temperature to 800-850 DEG C, pressure maintains 300-400mbar, be passed through 50000-60000sccm NH3,
The TEGa of 400-500sccm grows the GaN layer of 10nm, Iny1Ga(1-y1)N/Iny2Ga(1-y2)N/GaN periodicity is 10-15.
Preferably, the growing P-type AlGaN layer, further to increase the temperature to 900-1000 DEG C, reaction cavity pressure dimension
It holds in 200-400mbar, the p-type AlGaN layer of continued propagation 20-50nm on the active layer MQW, Al doping concentration 1E+20-
3E+20atoms/cm3, Mg doping concentration 5E+18-1E+19atoms/cm3。
Preferably, the p-type GaN layer of the growth doping Mg, further to increase the temperature to 930-950 DEG C, reaction chamber pressure
Power maintains 200-600mbar, and the p-type GaN layer for mixing magnesium of continued propagation 100-300nm, Mg mix in the p-type AlGaN layer
Miscellaneous concentration 1E+19-1E+20atoms/cm3。
Preferably, the cooling down, further for, be cooled to 700-800 DEG C, keep the temperature 20-30min, it is then cold in furnace
But.
Compared with prior art, LED epitaxial wafer growing method provided by the invention, reach it is following the utility model has the advantages that
First, by the first slightly lower gradual change AlGaN layer of the Grown on Sapphire Substrates crystalline quality in AlN film, with
Substrate can be matched preferably, have smaller lattice mismatch, and the filling of extension atom can be made uniformly upward, improve piece
Interior uniformity.
Second, the second high gradual change AlGaN layer of crystalline quality, epitaxial layer atom meeting are grown in the first gradual change AlGaN layer
Releasing piece internal stress stops early period lattice mismatch to generate defect and upwardly extends, and when continued growth, blocks again directly parallel
Defect upwardly extends when passage upwards, reduces dislocation density, improves crystal quality.
Third, the third gradual change AlGaN layer of growth pressure temperature gradual change simultaneously, passes through pressure in the second gradual change AlGaN layer
Power and growth temperature gradual change simultaneously, improve the lattice match of third gradual change AlGaN and GaN, continued growth contains on this basis
The epitaxial layer of GaN material, GaN material reach the state of complete relaxation, to eliminate lattice during LED epitaxial material growth
Mismatch bring stress significantly increases the window of epitaxial film material stress control, so as to reduce epitaxial wafer warpage, favorably
In the qualification rate of raising GaN epitaxy piece, and improve LED luminous efficiency.
4th, carry out that 20s is of short duration moves back to the first gradual change AlGaN layer, the second gradual change AlGaN layer and third gradual change AlGaN layer
Fire processing, so that the first gradual change AlGaN layer, the second gradual change AlGaN layer and third gradual change AlGaN layer lattice obtain under heat effect
To new regularly arranged, neat surface is obtained, the low temperature buffer layer growth of next step is conducive to, and makes entire epi-layer surface
More smooth, surface hexagonal defect and concave hole are less, and entire appearance is more preferable.
Detailed description of the invention
The drawings described herein are used to provide a further understanding of the present application, constitutes part of this application, this Shen
Illustrative embodiments and their description please are not constituted an undue limitation on the present application for explaining the application.In the accompanying drawings:
Fig. 1 is the flow chart of LED epitaxial wafer growing method in the embodiment of the present invention 1.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description.It should be noted that described embodiment only actually is a part of the embodiment of the present invention, rather than whole realities
Example is applied, and is actually merely illustrative, never as to the present invention and its application or any restrictions used.The guarantor of the application
Protect range as defined by the appended claims.
Embodiment 1:
Specific embodiment shown in Figure 1 for herein described LED epitaxial wafer growing method, this method comprises:
Step 101, processing surface have the Sapphire Substrate of AlN film, specifically, at 1000 DEG C, reaction cavity pressure dimension
It holds Sapphire Substrate 5 minutes that there is AlN film on the high-temperature process surface under the hydrogen atmosphere of 100mbar.
Step 102, sequentially one gradual change AlGaN layer of growth regulation, two gradual change AlGaN layer of growth regulation in the Sapphire Substrate
With third gradual change AlGaN layer:
The one gradual change AlGaN layer of growth regulation includes: the reaction cavity pressure for controlling 400mbar, is passed through flow to reaction chamber
For the NH of 60L/min3, 90L/min N2, the source TMAl of TMGa, 230sccm of 100sccm, to drop each second in growth course
Growth temperature is reduced to 500 DEG C from 550 DEG C of gradual changes by low 0.1 DEG C, in that the Grown on Sapphire Substrates thickness D1 is 8nm
One gradual change AlGaN layer, wherein the molar constituent of Al is 10%；
The two gradual change AlGaN layer of growth regulation includes: that growth temperature is increased to 700 DEG C, keeps reaction cavity pressure gentle
It is constant that body is passed through flow, increases 0.2 DEG C in growth course with each second and growth temperature is increased to 800 DEG C from 700 DEG C of gradual changes,
Growth thickness D2 is the second gradual change AlGaN layer of 8nm in the first gradual change AlGaN layer, and wherein the molar constituent of Al is 10%；
The three gradual change AlGaN layer of growth regulation includes: to improve reaction cavity pressure to 800mbar, and growth temperature is from 800 DEG C
600 DEG C are reduced to, keeping gas to be passed through, flow is constant, and cavity pressure and growth temperature gradual change simultaneously are reacted in control, wherein reaction chamber
Pressure is reduced from 800mbar gradual change to 650mbar with reduction 1mbar per second, and growth temperature reduces 1 DEG C from 600 DEG C gradually with per second
Become and reduces to 450 DEG C, the third for the temperature, pressure gradual change simultaneously that growth thickness D3 is 8nm in the second gradual change AlGaN layer
Gradual change AlGaN layer, wherein the molar constituent of Al is 10%；
It keeps reaction cavity pressure in 850mbar, controls N2Flow is 150L/min, control reaction chamber temperature 680 DEG C it
Between, 20s's is carried out to the first gradual change AlGaN layer, the second gradual change AlGaN layer and the third gradual change AlGaN layer
Annealing.
Step 103, growing low temperature buffer layer: being cooled at 550 DEG C, and reaction cavity pressure maintains 400mbar, is passed through flow
For 10000sccm NH3, 50sccm TMGa, 100L/min H2, growth thickness is 20nm in the third gradual change AlGaN layer
Low temperature buffer layer.
Step 104 grows the GaN layer that undopes: increasing the temperature to 1000 DEG C, reaction cavity pressure maintains 150mbar, is passed through
Flow is the NH of 30000sccm3, 200sccm TMGa, 100L/min H2, on the low temperature buffer layer 2 μm of continued propagation
The GaN layer that undopes.
The N-type GaN layer of step 105, growth doping Si: keeping reaction cavity pressure in 150mbar, kept for 1000 DEG C of temperature,
It is passed through the NH that flow is 40L/min3, 200sccm TMGa, 50L/min H2And the SiH of 20sccm4, in the GaN that undopes
The N-type GaN layer of 2 μm of continued propagation doping Si on layer, Si doping concentration are 5E+18atoms/cm3。
Step 106, cyclical growth active layer MQW:
Reaction cavity pressure maintains 300mbar, 700 DEG C of low temperature, is passed through the NH of 50000sccm3, 100sccm TEGa, with
And the flow of TMIn, TMIn progressively increase to 1500sccm from 150sccm with increase 45sccm per second, grow 30s's
In0.015Ga0.985N, growth thickness 1nm, In doping concentration is with increase 6.7E+17atoms/cm per second3From 1E+19atoms/
cm3Fade to 3E+19atoms/cm3；
Maintain growth conditions constant, the flow for stablizing TMIn is 1500sccm, grows the In of 100s0.25Ga0.75N, growth are thick
Degree is 2nm, and In doping concentration is 1E+20atoms/cm3；
Temperature is increased to 800 DEG C, pressure maintains 300mbar, is passed through the TEGa of NH3,400sccm of 50000sccm, raw
The GaN layer of long 10nm, In0.015Ga0.985N/In0.25Ga0.75N/GaN periodicity is 10.
Step 107, growing P-type AlGaN layer: 900 DEG C are increased the temperature to, reaction cavity pressure maintains 200mbar, described
The p-type AlGaN layer of continued propagation 20nm on active layer MQW, Al doping concentration are 1E+20atoms/cm3, Mg doping concentration is 5E
+18atoms/cm3。
The p-type GaN layer of step 108, growth doping Mg: increasing the temperature to 930 DEG C, and reaction cavity pressure maintains 200mbar,
The p-type GaN layer for mixing magnesium of continued propagation 100nm in the p-type AlGaN layer, Mg doping concentration are 1E+19atoms/cm3。
Step 109, cooling down: being cooled to 700 DEG C, keeps the temperature 20min, then cooling in furnace.
Embodiment 2:
LED epitaxial wafer growing method is present embodiments provided, this method comprises:
Step 201, processing surface have the Sapphire Substrate of AlN film, specifically, at 1200 DEG C, reaction cavity pressure dimension
It holds Sapphire Substrate 10 minutes that there is AlN film on the high-temperature process surface under the hydrogen atmosphere of 150mbar.
Step 202, the sequentially two gradual change AlGaN of one gradual change AlGaN layer of growth regulation and growth regulation in the Sapphire Substrate
Layer and third gradual change AlGaN layer:
The one gradual change AlGaN layer of growth regulation includes: the reaction cavity pressure for controlling 600mbar, is passed through flow to reaction chamber
For the NH of 70L/min3, 95L/min N2, the source TMAl of TMGa, 250sccm of 110sccm, to drop each second in growth course
Growth temperature is reduced to 500 DEG C from 550 DEG C of gradual changes by low 0.1 DEG C, is 10nm's in the Grown on Sapphire Substrates thickness D1
First gradual change AlGaN layer, wherein the molar constituent of Al is 12%；
The two gradual change AlGaN layer of growth regulation includes: that growth temperature is increased to 700 DEG C, keeps reaction cavity pressure gentle
It is constant that body is passed through flow, increases 0.2 DEG C in growth course with each second and growth temperature is increased to 800 DEG C from 700 DEG C of gradual changes,
Growth thickness D2 is the second gradual change AlGaN layer of 10nm in the first gradual change AlGaN layer, and wherein the molar constituent of Al is
12%；
The three gradual change AlGaN layer of growth regulation includes: to improve reaction cavity pressure to 800mbar, and growth temperature is from 800 DEG C
600 DEG C are reduced to, keeping gas to be passed through, flow is constant, and cavity pressure and growth temperature gradual change simultaneously are reacted in control, wherein reaction chamber
Pressure is reduced from 800mbar gradual change to 650mbar with reduction 1mbar per second, and growth temperature reduces 1 DEG C from 600 DEG C gradually with per second
Become and reduces to 450 DEG C, the third for the temperature, pressure gradual change simultaneously that growth thickness D3 is 10nm in the second gradual change AlGaN layer
Gradual change AlGaN layer, wherein the molar constituent of Al is 12%；
It keeps reaction cavity pressure in 900mbar, controls N2Flow is 160L/min, control reaction chamber temperature 720 DEG C it
Between, 20s's is carried out to the first gradual change AlGaN layer, the second gradual change AlGaN layer and the third gradual change AlGaN layer
Annealing.
Step 203, growing low temperature buffer layer: being cooled at 650 DEG C, and reaction cavity pressure maintains 600mbar, is passed through flow
For 20000sccm NH3, 100sccm TMGa, 130L/min H2, growth thickness is 50nm in the third gradual change AlGaN layer
Low temperature buffer layer.
Step 204 grows the GaN layer that undopes: increasing the temperature to 1200 DEG C, reaction cavity pressure maintains 300mbar, is passed through
Flow is the NH of 40000sccm3, 400sccm TMGa, 130L/min H2, on the low temperature buffer layer 4 μm of continued propagation
The GaN layer that undopes.
The N-type GaN layer of step 205, growth doping Si: keeping reaction cavity pressure in 300mbar, kept for 1100 DEG C of temperature,
It is passed through the NH that flow is 60L/min3, 300sccm TMGa, 90L/min H2And the SiH of 50sccm4, in the GaN that undopes
The N-type GaN layer of 4 μm of continued propagation doping Si on layer, Si doping concentration are 1E+19atoms/cm3。
Step 206, cyclical growth active layer MQW:
Reaction cavity pressure maintains 400mbar, 750 DEG C of low temperature, is passed through the NH of 60000sccm3, 150sccm TEGa, with
And the flow of TMIn, TMIn progressively increase to 1700sccm from 170sccm with increase 30.6sccm per second, grow 50s's
In0.010Ga0.990N, growth thickness 1.5nm, In doping concentration is with increase 4E+17atoms/cm per second3From 1E+19atoms/
cm3Fade to 3E+19atoms/cm3；
Maintain growth conditions constant, the flow for stablizing TMIn is 1700sccm, grows the In of 150s0.2Ga0.8N, growth are thick
Degree is 2nm, In doping concentration 3E+20atoms/cm3；
Temperature is increased to 850 DEG C, pressure maintains 400mbar, is passed through the TEGa of NH3,500sccm of 60000sccm, raw
The GaN layer of long 10nm, In0.010Ga0.990N/In0.2Ga0.8N/GaN periodicity is 15.
Step 207, growing P-type AlGaN layer: 1000 DEG C are increased the temperature to, reaction cavity pressure maintains 400mbar, in institute
The p-type AlGaN layer of continued propagation 50nm on active layer MQW is stated, Al doping concentration is 3E+20atoms/cm3, Mg doping concentration is
1E+19atoms/cm3。
The p-type GaN layer of step 208, growth doping Mg: increasing the temperature to 950 DEG C, and reaction cavity pressure maintains 600mbar,
The p-type GaN layer for mixing magnesium of continued propagation 300nm in the p-type AlGaN layer, Mg doping concentration are 1E+20atoms/cm3。
Step 209, cooling down: being cooled to 800 DEG C, keeps the temperature 30min, then cooling in furnace.
Embodiment 3
Step 301, processing surface have the Sapphire Substrate of AlN film, specifically, at 1100 DEG C, reaction cavity pressure dimension
It holds Sapphire Substrate 7 minutes that there is AlN film on the high-temperature process surface under the hydrogen atmosphere of 125mbar.
Step 302, the sequentially two gradual change AlGaN of one gradual change AlGaN layer of growth regulation and growth regulation in the Sapphire Substrate
Layer and third gradual change AlGaN layer:
The one gradual change AlGaN layer of growth regulation includes: the reaction cavity pressure for controlling 500mbar, is passed through flow to reaction chamber
For the NH of 65L/min3, 93L/min N2, the source TMAl of TMGa, 240sccm of 105sccm, to drop each second in growth course
Growth temperature is reduced to 500 DEG C from 550 DEG C of gradual changes by low 0.1 DEG C, in that the Grown on Sapphire Substrates thickness D1 is 9nm
One gradual change AlGaN layer, wherein the molar constituent of Al is 11%；
The two gradual change AlGaN layer of growth regulation includes: that growth temperature is increased to 700 DEG C, keeps reaction cavity pressure gentle
It is constant that body is passed through flow, increases 0.2 DEG C in growth course with each second and growth temperature is increased to 800 DEG C from 700 DEG C of gradual changes,
Growth thickness D2 is the second gradual change AlGaN layer of 9nm in the first gradual change AlGaN layer, and wherein the molar constituent of Al is 11%；
The three gradual change AlGaN layer of growth regulation includes: to improve reaction cavity pressure to 800mbar, and growth temperature is from 800 DEG C
600 DEG C are reduced to, keeping gas to be passed through, flow is constant, and cavity pressure and growth temperature gradual change simultaneously are reacted in control, wherein reaction chamber
Pressure is reduced from 800mbar gradual change to 650mbar with reduction 1mbar per second, and growth temperature reduces 1 DEG C from 600 DEG C gradually with per second
Become and reduces to 450 DEG C, the third for the temperature, pressure gradual change simultaneously that growth thickness D3 is 9nm in the second gradual change AlGaN layer
Gradual change AlGaN layer, wherein the molar constituent of Al is 11%；
It keeps reaction cavity pressure in 870mbar, controls N2Flow is 155L/min, control reaction chamber temperature 700 DEG C it
Between, 20s's is carried out to the first gradual change AlGaN layer, the second gradual change AlGaN layer and the third gradual change AlGaN layer
Annealing.
Step 303, growing low temperature buffer layer: being cooled at 600 DEG C, and reaction cavity pressure maintains 500mbar, is passed through flow
For 15000sccm NH3, 70sccm TMGa, 115L/min H2, growth thickness is 35nm in the third gradual change AlGaN layer
Low temperature buffer layer.
Step 304 grows the GaN layer that undopes: increasing the temperature to 1100 DEG C, reaction cavity pressure maintains 225mbar, is passed through
Flow is the NH of 35000sccm3, 300sccm TMGa, 115L/min H2, on the low temperature buffer layer 3 μm of continued propagation
The GaN layer that undopes.
The N-type GaN layer of step 305, growth doping Si: keeping reaction cavity pressure in 225mbar, kept for 1050 DEG C of temperature,
It is passed through the NH that flow is 50L/min3, 250sccm TMGa, 70L/min H2And the SiH of 35sccm4, in the GaN that undopes
The N-type GaN layer of 3 μm of continued propagation doping Si, Si doping concentration 7E+18atoms/cm on layer3。
Step 306, cyclical growth active layer MQW:
Reaction cavity pressure maintains 350mbar, 725 DEG C of low temperature, is passed through the NH of 55000sccm3, 125sccm TEGa, with
And the flow of TMIn, TMIn progressively increase to 1600sccm from 160sccm with increase 36sccm per second, grow 40s's
In0.1Ga0.9N, growth thickness 1.15nm, In doping concentration is with increase 5E+17atoms/cm per second3From 1E+19atoms/cm3
Fade to 3E+19atoms/cm3；
Maintain growth conditions constant, the flow for stablizing TMIn is 1600sccm, grows the In of 125s0.15Ga0.85N, growth are thick
Degree is 2.1nm, and In doping concentration is 2E+20atoms/cm3；
Temperature is increased to 825 DEG C, pressure maintains 350mbar, is passed through the TEGa of NH3,450sccm of 55000sccm, raw
The GaN layer of long 10nm, In0.1Ga0.9N/In0.15Ga0.85N/GaN periodicity is 13.
Step 307, growing P-type AlGaN layer: 950 DEG C are increased the temperature to, reaction cavity pressure maintains 300mbar, described
The p-type AlGaN layer of continued propagation 35nm on active layer MQW, Al doping concentration are 2E+20atoms/cm3, Mg doping concentration is
7.5E+18atoms/cm3。
The p-type GaN layer of step 308, growth doping Mg: increasing the temperature to 940 DEG C, and reaction cavity pressure maintains 400mbar,
The p-type GaN layer for mixing magnesium of continued propagation 200nm in the p-type AlGaN layer, Mg doping concentration are 5E+19atoms/cm3。
Step 309, cooling down: being cooled to 750 DEG C, keeps the temperature 25min, then cooling in furnace.
Embodiment 4
Step 401, processing surface have the Sapphire Substrate of AlN film, specifically, at 1050 DEG C, reaction cavity pressure dimension
It holds Sapphire Substrate 6 minutes that there is AlN film on the high-temperature process surface under the hydrogen atmosphere of 110mbar.
Step 402, the sequentially two gradual change AlGaN of one gradual change AlGaN layer of growth regulation and growth regulation in the Sapphire Substrate
Layer and third gradual change AlGaN layer:
The one gradual change AlGaN layer of growth regulation includes: the reaction cavity pressure for controlling 450mbar, is passed through flow to reaction chamber
For the NH of 63L/min3, 91L/min N2, the source TMAl of TMGa, 235sccm of 102sccm, to drop each second in growth course
Growth temperature is reduced to 500 DEG C from 550 DEG C of gradual changes by low 0.1 DEG C, is 8.5nm's in the Grown on Sapphire Substrates thickness D1
First gradual change AlGaN layer, wherein the molar constituent of Al is 10.5%；
The two gradual change AlGaN layer of growth regulation includes: that growth temperature is increased to 700 DEG C, keeps reaction cavity pressure gentle
It is constant that body is passed through flow, increases 0.2 DEG C in growth course with each second and growth temperature is increased to 800 DEG C from 700 DEG C of gradual changes,
Growth thickness D2 is the second gradual change AlGaN layer of 8.5nm in the first gradual change AlGaN layer, and wherein the molar constituent of Al is
10.5%；
The three gradual change AlGaN layer of growth regulation includes: to improve reaction cavity pressure to 800mbar, and growth temperature is from 800 DEG C
600 DEG C are reduced to, keeping gas to be passed through, flow is constant, and cavity pressure and growth temperature gradual change simultaneously are reacted in control, wherein reaction chamber
Pressure is reduced from 800mbar gradual change to 650mbar with reduction 1mbar per second, and growth temperature reduces 1 DEG C from 600 DEG C gradually with per second
Become and reduces to 450 DEG C, the of the temperature, pressure gradual change simultaneously that growth thickness D3 is 8.5nm in the second gradual change AlGaN layer
Three gradual change AlGaN layers, wherein the molar constituent of Al is 10.5%；
It keeps reaction cavity pressure in 860mbar, controls N2Flow is 152L/min, control reaction chamber temperature 690 DEG C it
Between, 20s's is carried out to the first gradual change AlGaN layer, the second gradual change AlGaN layer and the third gradual change AlGaN layer
Annealing.
Step 403, growing low temperature buffer layer: being cooled at 560 DEG C, and reaction cavity pressure maintains 450mbar, is passed through flow
For 13000sccm NH3, 60sccm TMGa, 110L/min H2, growth thickness is 30nm in the third gradual change AlGaN layer
Low temperature buffer layer.
Step 404 grows the GaN layer that undopes: increasing the temperature to 1050 DEG C, reaction cavity pressure maintains 180mbar, is passed through
Flow is the NH of 33000sccm3, 250sccm TMGa, 110L/min H2, on the low temperature buffer layer 2.5 μ of continued propagation
The GaN layer that undopes of m.
The N-type GaN layer of step 405, growth doping Si: keeping reaction cavity pressure in 190mbar, kept for 1010 DEG C of temperature,
It is passed through the NH that flow is 45L/min3, 220sccm TMGa, 60L/min H2And the SiH of 25sccm4, in the GaN that undopes
The N-type GaN layer of 2.5 μm of continued propagation doping Si, Si doping concentration 6E+18atoms/cm on layer3。
Step 406, cyclical growth active layer MQW:
Reaction cavity pressure maintains 330mbar, 710 DEG C of low temperature, is passed through the NH of 53000sccm3, 110sccm TEGa, with
And the flow of TMIn, TMIn progressively increase to 1550sccm from 155sccm with increase 39.8sccm per second, grow 35s's
In0.2Ga0.8N, growth thickness 1.2nm, In doping concentration is with increase 5.7E+17atoms/cm per second3From 1E+19atoms/cm3
Fade to 3E+19atoms/cm3；
Maintain growth conditions constant, the flow for stablizing TMIn is 1550sccm, grows the In of 110s0.22Ga0.78N, growth are thick
Degree is 2.15nm, and In doping concentration is 1.5E+20atoms/cm3；
Temperature is increased to 810 DEG C, pressure maintains 330mbar, is passed through the TEGa of NH3,430sccm of 53000sccm, raw
The GaN layer of long 10nm, In0.2Ga0.8N/In0.22Ga0.78N/GaN periodicity is 11.
Step 407, growing P-type AlGaN layer: 930 DEG C are increased the temperature to, reaction cavity pressure maintains 250mbar, described
The p-type AlGaN layer of continued propagation 25nm on active layer MQW, Al doping concentration are 1.5E+20atoms/cm3, Mg doping concentration is
6E+18atoms/cm3。
The p-type GaN layer of step 408, growth doping Mg: increasing the temperature to 910 DEG C, and reaction cavity pressure maintains 300mbar,
The p-type GaN layer for mixing magnesium of continued propagation 150nm in the p-type AlGaN layer, Mg doping concentration are 3E+19atoms/cm3。
Step 409, cooling down: being cooled to 720 DEG C, keeps the temperature 22min, then cooling in furnace.
Comparative experiments:
It is a kind of traditional handicraft LED structure epitaxial growth method, specific steps below are as follows:
1, at 1000-1200 DEG C, reaction cavity pressure, which maintains high-temperature process surface under the hydrogen atmosphere of 100-150mbar, to be had
The Sapphire Substrate of AlN film 5-10 minutes.
2, it is cooled at 550-650 DEG C, reaction cavity pressure maintains 400-600mbar, and being passed through flow is 10000-
20000sccm NH3, 50-100sccm TMGa, 100-130L/min H2, growth thickness is 20- on a sapphire substrate
The low temperature buffer layer GaN of 50nm.
3,1000-1200 DEG C is increased the temperature to, reaction cavity pressure maintains 150-300mbar, and being passed through flow is 30000-
The NH of 40000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min H2, 2-4 μm of continued propagation do not mix
Miscellaneous GaN；
4, N-type GaN, the Si doping concentration 5E+18-1E+19atoms/cm of continued propagation doping Si3, overall thickness, which controls, to exist
2-4μm。
5, cyclical growth active layer MQW, including step,
Reaction cavity pressure maintains 300-400mbar, 700-750 DEG C of low temperature, is passed through the NH of 50000-60000sccm3、
The flow of the TEGa and TMIn of 100-150sccm, TMIn progressively increase to 1500-1700sccm from 150-170sccm, raw
The In of long 30-50sy1Ga(1-y1)N, growth thickness D6, In doping concentration is from 1E+19atoms/cm3Fade to 3E+19atoms/
cm3；
Maintain growth conditions constant, the flow for stablizing TMIn is 1500-1700sccm, grows 100-150s's
Iny2Ga(1-y2)N, growth thickness D7, In doping concentration 1E+20-3E+20atoms/cm3, the range of D6+D7 is 3-3.5nm,
The range of y1 and y2 is 0.015-0.25, and wherein y1 and y2 are unequal；
Increase temperature to 800-850 DEG C, pressure maintains 300-400mbar, be passed through 50000-60000sccm NH3,
The TEGa of 400-500sccm grows the GaN layer of 10nm, Iny1Ga(1-y1)N/Iny2Ga(1-y2)N/GaN periodicity is 10-15.
6,900-1000 DEG C is increased the temperature to again, and reaction cavity pressure maintains 200-400mbar, continued propagation 20-50nm
P-type AlGaN layer, Al doping concentration 1E+20-3E+20atoms/cm3, Mg doping concentration 5E+18-1E+19atoms/cm3。
7,930-950 DEG C is increased the temperature to again, and reaction cavity pressure maintains 200-600mbar, continued propagation 100-300nm
The p-type GaN layer for mixing magnesium, Mg doping concentration 1E+19-1E+20atoms/cm3。
8, it is finally cooled to 700-800 DEG C, keeps the temperature 20-30min, it is then cooling in furnace.
It grown one group of epitaxial wafer sample W1 using growing method provided by the invention, use the growing method of traditional handicraft
It grown one group of epitaxial wafer sample W2.Epitaxial wafer sample W1 is fabricated to according to standard technology on production line having a size of 254 μ ms
Epitaxial wafer sample W2 is fabricated to according to standard technology on production line having a size of 686 μm of 254 μ m by 686 μm of chip sample C1
Chip sample C2.
Crystallization using the high-resolution X-ray diffractometer (HRXRD) of model D8Discover to GaN epitaxy piece sample
Quality is characterized, and tests chip sample using the semi-integral ball full-automatic wafer point measurement machine of model LEDA-8F P7202
Photoelectric characteristic, as shown in table 1:
The FWHM (halfwidth) and dislocation density of the XRD rocking curve of 1 sample W1 W2 of table
It is available such as to draw a conclusion by analytical table 1: compared with sample W2, the threading dislocation density and edge dislocation of sample W1
Density all decreased significantly, and halfwidth is smaller, illustrate that the method for the present invention can effectively improve the crystal quality of epitaxial film.
In addition, the appearance yield to sample W1, W2 counts, the ratio that surface is cheated there are hexagonal defect and concave in W2 sample is
Surface is 0.3% there are the ratio that hexagonal defect and concave are cheated in 0.7%, W1 sample, this illustrates that the method for the present invention can be obvious
Improve the state of appearance on epitaxial wafer surface.
The angularity BOW Value Data (um) of epitaxial wafer sample W1, W2 are counted, W1 sample angularity average value is
5.6um, W2 sample angularity average value are 6.4um, and the angularity of the LED epitaxial wafer sample of the method for the present invention production is obviously wanted
Small, this illustrates that the method for the present invention can significantly reduce epitaxial wafer warpage, improves product qualification rate.
LED component photoelectricity is joined in order to illustrate the crystal quality of the GaN epitaxy piece of the method for the present invention and conventional method growth
Sample W1 and sample W2 are fabricated to chip by several influences respectively.Specifically, sample W1 is fabricated to chip, obtain having a size of
The chip sample C1 of 254 686 μm of μ ms；Sample W2 is fabricated to chip, obtains the chip sample having a size of 686 μm of 254 μ m
C2；Luminous power (LOP) is tested at positive 150mA using point measurement machine, leakage current (IR) is tested at reversed -5V, in human body
Antistatic effect (ESD percent of pass) is tested under mode (HBM) 2000V and 4000V, acquires being averaged for all core particles photoelectric parameters
Value, as shown in table 2:
The main photoelectric parameter testing value of table 2 chip sample C1 and C2
Available such as to draw a conclusion by analytical table 2: the chip sample of growing method production provided by the invention shines
Power is high, and electric leakage obviously wants small, and antistatic yield is high.Wherein, the master that luminous power is high, electric leakage is small, antistatic effect is strong
Want the reason is that when the method for the present invention increases epitaxial crystal growth defect blocking and isolation mech isolation test, successively reduce dislocation uplink,
Step up Lattice Matching, reduce dislocation density, reduce defective proportion, improve crystal quality, thus improve LED luminous efficiency,
Improve antistatic effect.
As can be seen from the above embodiments beneficial effect existing for the application is:
First, by the first slightly lower gradual change AlGaN layer of the Grown on Sapphire Substrates crystalline quality in AlN film, with
Substrate can be matched preferably, have smaller lattice mismatch, and the filling of extension atom can be made uniformly upward, improve piece
Interior uniformity.
Second, the second high gradual change AlGaN layer of crystalline quality, epitaxial layer atom meeting are grown in the first gradual change AlGaN layer
Releasing piece internal stress stops early period lattice mismatch to generate defect and upwardly extends, and when continued growth, blocks again directly parallel
Defect upwardly extends when passage upwards, reduces dislocation density, improves crystal quality.
Third, the third gradual change AlGaN layer of growth pressure temperature gradual change simultaneously, passes through pressure in the second gradual change AlGaN layer
Power and growth temperature gradual change simultaneously, improve the lattice match of third gradual change AlGaN and GaN, continued growth contains on this basis
The epitaxial layer of GaN material, GaN material reach the state of complete relaxation, to eliminate lattice during LED epitaxial material growth
Mismatch bring stress significantly increases the window of epitaxial film material stress control, so as to reduce epitaxial wafer warpage, favorably
In the qualification rate of raising GaN epitaxy piece, and improve LED luminous efficiency.
4th, carry out that 20s is of short duration moves back to the first gradual change AlGaN layer, the second gradual change AlGaN layer and third gradual change AlGaN layer
Fire processing, so that the first gradual change AlGaN layer, the second gradual change AlGaN layer and third gradual change AlGaN layer lattice obtain under heat effect
To new regularly arranged, neat surface is obtained, the low temperature buffer layer growth of next step is conducive to, and makes entire epi-layer surface
More smooth, surface hexagonal defect and concave hole are less, and entire appearance is more preferable.
Although some specific embodiments of the invention are described in detail by example, the skill of this field
Art personnel it should be understood that example above merely to being illustrated, the range being not intended to be limiting of the invention.Although referring to before
Stating embodiment, invention is explained in detail, for those skilled in the art, still can be to aforementioned reality
Technical solution documented by example is applied to modify or equivalent replacement of some of the technical features.It is all of the invention
Within spirit and principle, any modification, equivalent replacement, improvement and so on be should all be included in the protection scope of the present invention.
The scope of the present invention is defined by the appended claims.
Claims (9)
1. a kind of LED epitaxial wafer growing method, which is characterized in that comprising steps of
Handle the Sapphire Substrate that surface has AlN film；
Sequentially one gradual change AlGaN layer of growth regulation, two gradual change AlGaN layer of growth regulation and growth regulation in the Sapphire Substrate
Three gradual change AlGaN layers, wherein
The one gradual change AlGaN layer of growth regulation includes: the reaction cavity pressure for controlling 400-600mbar, is passed through flow to reaction chamber
For the NH of 60-70L/min3, 90-95L/min N2, the source TMAl of TMGa, 230-250sccm of 100-110sccm were grown
0.1 DEG C is reduced with each second in journey, growth temperature is reduced to 500 DEG C from 550 DEG C of gradual changes, in the Grown on Sapphire Substrates
Thickness D1 is the first gradual change AlGaN layer of 8-10nm, and wherein the molar constituent of Al is 10-12%；
The two gradual change AlGaN layer of growth regulation includes: that growth temperature is increased to 700 DEG C, keeps the reaction gentle body of cavity pressure logical
Inbound traffics are constant, increase 0.2 DEG C in growth course with each second and growth temperature is increased to 800 DEG C from 700 DEG C of gradual changes, described
Growth thickness D2 is the second gradual change AlGaN layer of 8-10nm in first gradual change AlGaN layer, and wherein the molar constituent of Al is 10-
12%, D2=D1；
The three gradual change AlGaN layer of growth regulation includes: to improve reaction cavity pressure to 800mbar, and growth temperature is reduced from 800 DEG C
To 600 DEG C, keeping gas to be passed through, flow is constant, and cavity pressure and growth temperature gradual change simultaneously are reacted in control, wherein reacting cavity pressure
It is reduced from 800mbar gradual change to 650mbar with reduction 1mbar per second, growth temperature is subtracted with 1 DEG C of reduction per second from 600 DEG C of gradual changes
As little as 450 DEG C, the third for the temperature, pressure gradual change simultaneously that growth thickness D3 is 8-10nm in the second gradual change AlGaN layer is gradually
Become AlGaN layer, wherein the molar constituent of Al is 10-12%, D3=D2；
It keeps reaction cavity pressure between 850-900mbar, controls N2Flow is 150-160L/min, and control reaction chamber temperature exists
Between 680-720 DEG C, 20s is carried out to the first gradual change AlGaN layer, the second gradual change AlGaN layer and third gradual change AlGaN layer
Annealing；
Growing low temperature buffer layer；
Grow the GaN layer that undopes；
The N-type GaN layer of growth doping Si；
Cyclical growth active layer MQW；
Growing P-type AlGaN layer；
The p-type GaN layer of growth doping Mg；
And cooling down.
2. LED epitaxial wafer growing method according to claim 1, which is characterized in that at 1000-1200 DEG C, reaction chamber pressure
Power maintains Sapphire Substrate 5-10 minutes that there are AlN film on high-temperature process surface under the hydrogen atmosphere of 100-150mbar.
3. LED epitaxial wafer growing method according to claim 1, which is characterized in that the growing low temperature buffer layer, into one
Step is to be cooled at 550-650 DEG C, and reaction cavity pressure maintains 400-600mbar, and being passed through flow is 10000-20000sccm
NH3, 50-100sccm TMGa, 100-130L/min H2, in the third gradual change AlGaN layer growth thickness be 20-50nm
Low temperature buffer layer.
4. LED epitaxial wafer growing method according to claim 1, which is characterized in that it is described to grow the GaN layer that undopes, into
One step is to increase the temperature to 1000-1200 DEG C, and reaction cavity pressure maintains 150-300mbar, and being passed through flow is 30000-
The NH of 40000sccm3, 200sccm-400sccm TMGa, 100L/min-130L/min H2, on the low temperature buffer layer
2-4 μm of continued propagation of the GaN layer that undopes.
5. LED epitaxial wafer growing method according to claim 1, which is characterized in that the N-type GaN of the growth doping Si
Layer, further for holding reaction cavity pressure is kept for 1000-1100 DEG C of temperature in 150-300mbar, and being passed through flow is 40L/
The NH of min-60L/min3, 200sccm-300sccm TMGa, 50L/min-90L/min H2And 20sccm-50sccm
SiH4, the N-type GaN layer of 2-4 μm of continued propagation doping Si, Si doping concentration 5E+18-1E+ in the GaN layer that undopes
19atoms/cm3。
6. LED epitaxial wafer growing method according to claim 1, which is characterized in that the cyclical growth active layer
MQW, further for,
Reaction cavity pressure maintains 300-400mbar, 700-750 DEG C of low temperature, is passed through the NH of 50000-60000sccm3、100-
The flow of the TEGa and TMIn of 150sccm, TMIn are progressively increased to increase 25-52sccm per second from 150-170sccm
1500-1700sccm grows the In of 30-50sy1Ga(1-y1)N, growth thickness D4, In doping concentration is with increase 4E+17- per second
7E+17atoms/cm3From 1E+19atoms/cm3Fade to 3E+19atoms/cm3；
Maintain growth conditions constant, the flow for stablizing TMIn is 1500-1700sccm, grows the In of 100-150sy2Ga(1-y2)N,
Growth thickness is D5, In doping concentration 1E+20-3E+20atoms/cm3, the range of D4+D5 is the range of 3-3.5nm, y1 and y2
For 0.015-0.25, wherein y1 and y2 are unequal；
Temperature is increased to 800-850 DEG C, pressure maintains 300-400mbar, is passed through NH3,400- of 50000-60000sccm
The TEGa of 500sccm grows the GaN layer of 10nm, Iny1Ga(1-y1)N/Iny2Ga(1-y2)N/GaN periodicity is 10-15.
7. LED epitaxial wafer growing method according to claim 1, which is characterized in that the growing P-type AlGaN layer, into one
Step is to increase the temperature to 900-1000 DEG C, and reaction cavity pressure maintains 200-400mbar, persistently gives birth on the active layer MQW
The p-type AlGaN layer of long 20-50nm, Al doping concentration 1E+20-3E+20atoms/cm3, Mg doping concentration 5E+18-1E+
19atoms/cm3。
8. LED epitaxial wafer growing method according to claim 1, which is characterized in that the p-type GaN of the growth doping Mg
Layer, further to increase the temperature to 930-950 DEG C, reaction cavity pressure maintains 200-600mbar, in the p-type AlGaN layer
The p-type GaN layer for mixing magnesium of upper continued propagation 100-300nm, Mg doping concentration 1E+19-1E+20atoms/cm3。
9. LED epitaxial wafer growing method according to claim 1, which is characterized in that the cooling down, further for,
It is cooled to 700-800 DEG C, keeps the temperature 20-30min, it is then cooling in furnace.
Priority Applications (1)
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| CN109411573A (en) * | 2018-10-17 | 2019-03-01 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial structure growing method |
| CN110620168A (en) * | 2019-09-24 | 2019-12-27 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN113990988A (en) * | 2021-10-28 | 2022-01-28 | 湘能华磊光电股份有限公司 | GaN-based LED epitaxial growth method for improving crystallization quality |
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| CN106328780A (en) * | 2016-11-01 | 2017-01-11 | 湘能华磊光电股份有限公司 | Method for substrate epitaxial growth of luminous diode based on AlN template |
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| CN109411573A (en) * | 2018-10-17 | 2019-03-01 | 湘能华磊光电股份有限公司 | A kind of LED epitaxial structure growing method |
| CN110620168A (en) * | 2019-09-24 | 2019-12-27 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN110620168B (en) * | 2019-09-24 | 2023-04-07 | 湘能华磊光电股份有限公司 | LED epitaxial growth method |
| CN113990988A (en) * | 2021-10-28 | 2022-01-28 | 湘能华磊光电股份有限公司 | GaN-based LED epitaxial growth method for improving crystallization quality |
| CN113990988B (en) * | 2021-10-28 | 2023-08-01 | 湘能华磊光电股份有限公司 | GaN-based LED epitaxial growth method for improving crystallization quality |
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