JPS55162277A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS55162277A
JPS55162277A JP7089779A JP7089779A JPS55162277A JP S55162277 A JPS55162277 A JP S55162277A JP 7089779 A JP7089779 A JP 7089779A JP 7089779 A JP7089779 A JP 7089779A JP S55162277 A JPS55162277 A JP S55162277A
Authority
JP
Japan
Prior art keywords
type
gaas
face
epitaxial layer
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7089779A
Other languages
Japanese (ja)
Other versions
JPS5936436B2 (en
Inventor
Josuke Nakada
Takao Oda
Susumu Yoshida
Kotaro Mitsui
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP54070897A priority Critical patent/JPS5936436B2/en
Publication of JPS55162277A publication Critical patent/JPS55162277A/en
Publication of JPS5936436B2 publication Critical patent/JPS5936436B2/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
    • H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
    • H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To improve ruggedness on a boundary face of a p-type GaAs and a p-type Ga1-xAlxAs and epitaxial layer surface condition by using GaAs of an n-type (111) face with Si as an impurity for substrate. CONSTITUTION:A p-type GaAs 12 through Zn diffusion is formed from a saturated Ga solvent 0.85 in x value of Al is formed against a GaAs substrate 11 of an n-type (111) face with Si as an impurity, and then a p-type Ga0.15Al0.85As 13 is obtained through epitaxial formation. According to this constitution, a boundary face of the layers 12 and 13 is flat and the surface condition of the epitaxial layer is by no means inferior to a vapor phase epitaxial layer. A fair crystallinity and an improved characteristic are obtainable thereby instead of using a GaAs substrate of conventional n-type (100) face.
JP54070897A 1979-06-04 1979-06-04 semiconductor equipment Expired JPS5936436B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP54070897A JPS5936436B2 (en) 1979-06-04 1979-06-04 semiconductor equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP54070897A JPS5936436B2 (en) 1979-06-04 1979-06-04 semiconductor equipment

Publications (2)

Publication Number Publication Date
JPS55162277A true JPS55162277A (en) 1980-12-17
JPS5936436B2 JPS5936436B2 (en) 1984-09-04

Family

ID=13444774

Family Applications (1)

Application Number Title Priority Date Filing Date
JP54070897A Expired JPS5936436B2 (en) 1979-06-04 1979-06-04 semiconductor equipment

Country Status (1)

Country Link
JP (1) JPS5936436B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0311444A2 (en) * 1987-10-08 1989-04-12 Sharp Kabushiki Kaisha A semiconductor laser device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0311444A2 (en) * 1987-10-08 1989-04-12 Sharp Kabushiki Kaisha A semiconductor laser device

Also Published As

Publication number Publication date
JPS5936436B2 (en) 1984-09-04

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