JPS5661176A - Gaas solar cell - Google Patents

Gaas solar cell

Info

Publication number
JPS5661176A
JPS5661176A JP13915379A JP13915379A JPS5661176A JP S5661176 A JPS5661176 A JP S5661176A JP 13915379 A JP13915379 A JP 13915379A JP 13915379 A JP13915379 A JP 13915379A JP S5661176 A JPS5661176 A JP S5661176A
Authority
JP
Japan
Prior art keywords
layer
substrate
gaas
type
solar cell
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP13915379A
Other languages
Japanese (ja)
Inventor
Kotaro Mitsui
Susumu Yoshida
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP13915379A priority Critical patent/JPS5661176A/en
Publication of JPS5661176A publication Critical patent/JPS5661176A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
    • H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier
    • H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
    • H01L31/0693—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by at least one potential-jump barrier or surface barrier the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells the devices including, apart from doping material or other impurities, only AIIIBV compounds, e.g. GaAs or InP solar cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/544—Solar cells from Group III-V materials
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/547—Monocrystalline silicon PV cells

Landscapes

  • Life Sciences & Earth Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Photovoltaic Devices (AREA)

Abstract

PURPOSE:To permits a GaAs solar cell to be used under high-temperature and high- humidity conditions by forming a Ga1-XAlXAs layer having a specified Al molar fraction and being a photoactive face inside the side surface of a GaAs layer and coating all the exposed upper and side surfaces of these layers with a light-reflection preventing film. CONSTITUTION:On a N type GaAs substrate 1, a P type Ga1-XAlAs layer 4 whose Al molar fraction is more than 0.8 is grown by liquid phase epitaxy. On doing this, the P type impurities contained in the layer 4 are diffused into the substrate 1 to produce a P type GaAs layer 2 as well as a P-N junction 3 at the interface between the layer 2 and the substrate 1. Then a lattice ohmic electrode 6 is formed on the upper surface of the layer 4, and an electrode 5 on the lower surface of the substrate 1. The layer 4 is photoetched to remove only its circumferential portion so that the layer 4 is inside the side surface 2b of the layer 2. After that, all the exposed surfaces of the layer 4 and the exposed upper surface 2a of the layer 2 are coated with a light-reflection preventing film 7 of Si3N4.
JP13915379A 1979-10-25 1979-10-25 Gaas solar cell Pending JPS5661176A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP13915379A JPS5661176A (en) 1979-10-25 1979-10-25 Gaas solar cell

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP13915379A JPS5661176A (en) 1979-10-25 1979-10-25 Gaas solar cell

Publications (1)

Publication Number Publication Date
JPS5661176A true JPS5661176A (en) 1981-05-26

Family

ID=15238793

Family Applications (1)

Application Number Title Priority Date Filing Date
JP13915379A Pending JPS5661176A (en) 1979-10-25 1979-10-25 Gaas solar cell

Country Status (1)

Country Link
JP (1) JPS5661176A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099807A (en) * 2010-11-03 2012-05-24 Alta Devices Inc Optoelectronic device having heterojunction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012099807A (en) * 2010-11-03 2012-05-24 Alta Devices Inc Optoelectronic device having heterojunction

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