JPS5784188A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPS5784188A
JPS5784188A JP15992480A JP15992480A JPS5784188A JP S5784188 A JPS5784188 A JP S5784188A JP 15992480 A JP15992480 A JP 15992480A JP 15992480 A JP15992480 A JP 15992480A JP S5784188 A JPS5784188 A JP S5784188A
Authority
JP
Japan
Prior art keywords
electrode
type
drops
water
layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP15992480A
Other languages
Japanese (ja)
Inventor
Hirohisa Abe
Yasuo Josa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp, Tokyo Shibaura Electric Co Ltd filed Critical Toshiba Corp
Priority to JP15992480A priority Critical patent/JPS5784188A/en
Publication of JPS5784188A publication Critical patent/JPS5784188A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H01L33/387—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape with a plurality of electrode regions in direct contact with the semiconductor body and being electrically interconnected by another electrode layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/05001—Internal layers
    • H01L2224/05073—Single internal layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05556—Shape in side view
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/0103—Zinc [Zn]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01079—Gold [Au]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Wire Bonding (AREA)
  • Led Devices (AREA)

Abstract

PURPOSE:To reduce the strain under an electrode and the generation of gouging phenomena by a method wherein electrode metal films which are to obtain ohmic contact are formed like drops of water on a side of a device which is connected to outside lead wires by bonding. CONSTITUTION:An n type GaAsP layer 12 is grown in a vapor-phase on a GaP substrate 11 and Zn is diffused to form a p type layer 13. AsZn14 is deposited on the p type GaAsP substrate 13 in vacuum by a metal mask in a form like drops of water. An AuGe film 15 is formed by vacuum deposition on the surface of the n type GaP substrate 11 and sintered to make ohmic contact. An Au film 16 is deposited on the p type GaAsP layer 13 on which patterns like drops of water of the AuZn 14 are formed and patterned and divided for each electrode.With above configuration strain under the electrode on the side of the device which is connected to outside lead wires by bonding can be reduced and the generation of gouging phenomena under the electrode can be reduced, so that the reliability can be improved.
JP15992480A 1980-11-13 1980-11-13 Semiconductor device Pending JPS5784188A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP15992480A JPS5784188A (en) 1980-11-13 1980-11-13 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15992480A JPS5784188A (en) 1980-11-13 1980-11-13 Semiconductor device

Publications (1)

Publication Number Publication Date
JPS5784188A true JPS5784188A (en) 1982-05-26

Family

ID=15704122

Family Applications (1)

Application Number Title Priority Date Filing Date
JP15992480A Pending JPS5784188A (en) 1980-11-13 1980-11-13 Semiconductor device

Country Status (1)

Country Link
JP (1) JPS5784188A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922375A (en) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd Light-emitting semiconductor device
US6552367B1 (en) 1999-10-08 2003-04-22 Epistar Corporation High brightness light emitting diode having a layer of distributed contacts

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826669A (en) * 1971-08-10 1973-04-07
JPS5098796A (en) * 1973-12-26 1975-08-06
JPS5111387A (en) * 1974-07-18 1976-01-29 Kyodo Electronic Lab

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4826669A (en) * 1971-08-10 1973-04-07
JPS5098796A (en) * 1973-12-26 1975-08-06
JPS5111387A (en) * 1974-07-18 1976-01-29 Kyodo Electronic Lab

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5922375A (en) * 1982-07-28 1984-02-04 Matsushita Electric Ind Co Ltd Light-emitting semiconductor device
US6552367B1 (en) 1999-10-08 2003-04-22 Epistar Corporation High brightness light emitting diode having a layer of distributed contacts

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