JPS56148835A - Semiconductor wafer - Google Patents

Semiconductor wafer

Info

Publication number
JPS56148835A
JPS56148835A JP5250680A JP5250680A JPS56148835A JP S56148835 A JPS56148835 A JP S56148835A JP 5250680 A JP5250680 A JP 5250680A JP 5250680 A JP5250680 A JP 5250680A JP S56148835 A JPS56148835 A JP S56148835A
Authority
JP
Japan
Prior art keywords
layer
back electrode
nickel
semiconductor substrate
silver layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP5250680A
Other languages
Japanese (ja)
Other versions
JPS614184B2 (en
Inventor
Hirotake Nagai
Ideo Maeyama
Makoto Tanaka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP5250680A priority Critical patent/JPS56148835A/en
Publication of JPS56148835A publication Critical patent/JPS56148835A/en
Publication of JPS614184B2 publication Critical patent/JPS614184B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/03—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01078—Platinum [Pt]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/078—Adhesive characteristics other than chemical
    • H01L2924/07802—Adhesive characteristics other than chemical not being an ohmic electrical conductor

Abstract

PURPOSE:To form a back electrode and obtain a low-resistance ohmic contact between a semiconductor substrate and the back electrode by a method wherein the back of the semiconductor substrate is plated directly with nickel, and a silver layer is made up on the plating. CONSTITUTION:The back of a semiconductor substrate 2 is plated by means of an electroless plating method and sintered, a nickel layer 3 is formed which is obtained by removing a surface layer oxidized by means of sputtering etching, a silver layer 4 is made up on the surface of the nickel layer 3 by means of sputting deposition and a back electrode consisting of the nickel layer and the silver layer is built up. Thus, since the back electrode in double structure consisting of the nickel layer and the silver layer is formed, constitution is simplified, a low-resistance ohmic contact is obtained, the back electrode is not exfoliated when dicing, and reliability is improved.
JP5250680A 1980-04-18 1980-04-18 Semiconductor wafer Granted JPS56148835A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5250680A JPS56148835A (en) 1980-04-18 1980-04-18 Semiconductor wafer

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5250680A JPS56148835A (en) 1980-04-18 1980-04-18 Semiconductor wafer

Publications (2)

Publication Number Publication Date
JPS56148835A true JPS56148835A (en) 1981-11-18
JPS614184B2 JPS614184B2 (en) 1986-02-07

Family

ID=12916609

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5250680A Granted JPS56148835A (en) 1980-04-18 1980-04-18 Semiconductor wafer

Country Status (1)

Country Link
JP (1) JPS56148835A (en)

Also Published As

Publication number Publication date
JPS614184B2 (en) 1986-02-07

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