JPS5464482A - Manufacture for semiconductor device - Google Patents

Abstract

PURPOSE: To avoid the occurrence of bending and damage to wafer, even if the thickness of substrate is made thin to increase the performance, by forming the metal reinforcement layer of well shape to compensate the mechanical strength of wafer, on the electrode placed on one major plane of the semiconductor wafer.

CONSTITUTION: On N⁺⁺ type GaAs substrate 1, N^- type GaAs layer 2 and N⁺ GaAs layer 3 are formed by lamination into the GaAs wafer 4, and the plated heat sink 6 forming part on the layer 3 is covered with resist mask, and the reinforcement layer 14 of well shape consisting of Au, Ni or Cu is formed with selective plating. Next, etching is made by removing the mask and after making thin the thickness of the substrate 1, the first and second ohmic electrodes 5 and 8 are coated on the well frame on the substrate 1 and the layer 3. After that, the reinforcement layer 4 is covered with the resist mask 15 and the heat sink 6 is formed in the frame of the layer 4 with selective plating again. After removing the layer 4 with the diode mesa-etched for the wafer 4 and stud 12 is fitted to the heat sink 6.

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