JPS5756977A - Semiconductor pressure detector - Google Patents
Semiconductor pressure detectorInfo
- Publication number
- JPS5756977A JPS5756977A JP13123580A JP13123580A JPS5756977A JP S5756977 A JPS5756977 A JP S5756977A JP 13123580 A JP13123580 A JP 13123580A JP 13123580 A JP13123580 A JP 13123580A JP S5756977 A JPS5756977 A JP S5756977A
- Authority
- JP
- Japan
- Prior art keywords
- silicon
- layer
- sapphire
- diaphragm
- pipe
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052710 silicon Inorganic materials 0.000 abstract 8
- 239000010703 silicon Substances 0.000 abstract 8
- 229910052594 sapphire Inorganic materials 0.000 abstract 3
- 239000010980 sapphire Substances 0.000 abstract 3
- 239000000919 ceramic Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Measuring Fluid Pressure (AREA)
- Pressure Sensors (AREA)
Abstract
PURPOSE:To obtain a detector having preferable characteristics by forming a silicon on one end face of a pipe formed of sapphire by a silicon-on-sapphire- technique, mounting a silicon diaphragm thereon, and thereby performing one step of mounting causing the production of a strain for a silicon diaphragm through one step. CONSTITUTION:A silicon layer 9 is formed by a silicon on sapphire technique on one end face of a pipe 8 of a sapphire in advance, is penetrated through a ceramic plate 10 provided with an electrode metallized layer 11, a silicon layer 9 is projected to the side of the layer 11, and is soldered fixedly. Then, a silicon diaphragm 6' is mounted on a silicon layer 9, is connected to the layer 11 via a fine metallic wire 7', and a cover is coated thereon. In this manner, the physical and electrical characteristics wit the diaphragm 6' and the pipe 8 can be, since the layer 9 is interposed therebetween, almost equal, thereby obtaining the detector having preferable characteristics.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13123580A JPS5756977A (en) | 1980-09-20 | 1980-09-20 | Semiconductor pressure detector |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP13123580A JPS5756977A (en) | 1980-09-20 | 1980-09-20 | Semiconductor pressure detector |
Publications (1)
Publication Number | Publication Date |
---|---|
JPS5756977A true JPS5756977A (en) | 1982-04-05 |
Family
ID=15053162
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP13123580A Pending JPS5756977A (en) | 1980-09-20 | 1980-09-20 | Semiconductor pressure detector |
Country Status (1)
Country | Link |
---|---|
JP (1) | JPS5756977A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0319939U (en) * | 1989-02-22 | 1991-02-27 |
-
1980
- 1980-09-20 JP JP13123580A patent/JPS5756977A/en active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0319939U (en) * | 1989-02-22 | 1991-02-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS52127257A (en) | Displacement converter | |
JPS5756977A (en) | Semiconductor pressure detector | |
JPS5382278A (en) | Production of semiconductor device | |
JPS5249094A (en) | Gas detecting device | |
JPS5715447A (en) | Production of substrate for carrying components | |
JPS5796561A (en) | Lead for connection of semiconductor device | |
JPS54144187A (en) | Semiconductor pressure converter | |
JPS5543415A (en) | Semiconductor pressure converter | |
JPS5710951A (en) | Semiconductor device | |
JPS56105670A (en) | Semiconductor device | |
JPS56146263A (en) | Manufacture of semiconductor device | |
JPS5739571A (en) | Constant current diode | |
JPS56115550A (en) | Manufacture of semiconductor device | |
JPS57109350A (en) | Semiconductor device | |
JPS5742133A (en) | Semiconductor device | |
JPS5745957A (en) | Circuit substrate and manufacture thereof | |
JPS5726991A (en) | Piezoelectric electroacoustic converter | |
JPS575366A (en) | Semiconductor device and manufacture thereof | |
JPS57162451A (en) | Semiconductor device | |
JPS52149992A (en) | Pressure transducer | |
JPS5732655A (en) | Semiconductor integrated circuit device | |
JPS5526689A (en) | Container for semiconductor device | |
JPS57121239A (en) | Semiconductor device | |
JPS57120386A (en) | Semiconductor device | |
JPS5784188A (en) | Semiconductor device |